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91. 发明授权

US07544605B2 Method of making a contact on a backside of a die 有权
标题翻译：在模具的背面进行接触的方法
公开(公告)号：US07544605B2
公开(公告)日：2009-06-09
申请号：US11562161
申请日：2006-11-21
申请人： Terry G. Sparks , Shahid Rauf
发明人： Terry G. Sparks , Shahid Rauf
IPC分类号： H01L21/20
CPC分类号： H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05572 , H01L2224/13025 , H01L2224/13111 , H01L2224/16146 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00014 , H01L2924/00012 , H01L2224/05552
摘要： A method of forming a semiconductor device includes forming active circuitry over a semiconductor substrate, wherein the semiconductor substrate has a first major surface and a second major surface and the first active circuitry is formed over the first major surface of the semiconductor substrate. A via is formed within the first semiconductor substrate, wherein the via extends from the first active circuitry to the second major surface of the first semiconductor substrate. A dielectric layer is formed over the second major surface and adjacent the first via. The dielectric layer may include nitrogen and silicon and may be formed by a low pressure, low temperature, or both plasma process.
摘要翻译：形成半导体器件的方法包括在半导体衬底上形成有源电路，其中半导体衬底具有第一主表面和第二主表面，并且第一有源电路形成在半导体衬底的第一主表面上。通孔形成在第一半导体衬底内，其中通孔从第一有源电路延伸到第一半导体衬底的第二主表面。介电层形成在第二主表面上并与第一通孔相邻。电介质层可以包括氮和硅，并且可以通过低压，低温或两种等离子体工艺形成。

92. 发明授权

US07534693B2 Thin-film capacitor with a field modification layer and methods for forming the same 有权
标题翻译：具有场改性层的薄膜电容器及其形成方法
公开(公告)号：US07534693B2
公开(公告)日：2009-05-19
申请号：US11326524
申请日：2006-01-04
申请人： Douglas R. Roberts , Eric D. Luckowski , Shahid Rauf , Peter L. G. Ventzek
发明人： Douglas R. Roberts , Eric D. Luckowski , Shahid Rauf , Peter L. G. Ventzek
IPC分类号： H01L21/20
CPC分类号： H01L28/40 , H01L28/57
摘要： A method for forming a capacitor includes providing a metal-containing bottom electrode, forming a capacitor insulator over the metal-containing bottom electrode, forming a metal-containing top electrode over the capacitor insulator, and forming a dielectric-containing field modification layer over the capacitor insulator and at least partially surrounding the metal-containing top electrode. Forming the dielectric-containing field modification layer may include oxidizing a sidewall of the metal-containing field modification layer. A barrier layer may be formed over the capacitor insulator prior to forming the metal-containing top electrode.
摘要翻译：一种形成电容器的方法包括提供含金属的底部电极，在含金属的底部电极上形成电容器绝缘体，在电容器绝缘体之上形成含金属的顶部电极，并在电容器绝缘体并且至少部分地围绕含金属的顶部电极。形成含电介质的场改性层可以包括氧化含金属的场改性层的侧壁。在形成含金属的顶部电极之前，可以在电容器绝缘体之上形成阻挡层。

93. 发明申请

US20050164514A1 Method for etching a quartz layer in a photoresistless semiconductor mask 有权
公开(公告)号：US20050164514A1
公开(公告)日：2005-07-28
申请号：US10766205
申请日：2004-01-28
申请人： Shahid Rauf , Peter Ventzek , Wei Wu
发明人： Shahid Rauf , Peter Ventzek , Wei Wu
IPC分类号： G03F1/00 , H01L21/302 , H01L21/311
CPC分类号： G03F1/34 , H01L21/31116
摘要： A chromeless phase lithography mask (30) that does not require photoresist to manufacture has a quartz substrate (32) is etched by using a plasma (38) containing one of a nitrogen augmented hydro-fluorocarbon oxygen mixture and a nitrogen augmented fluorocarbon oxygen mixture. Various hydro-fluorocarbons or fluorocarbons may be used. The nitrogen addition results in etched openings in the quartz substrate that have substantially vertical sidewalls in a uniform manner across the substrate. Surface roughness is minimized and edges of the openings are well-defined with minimal rounding. The etch rate is rendered controllable by reducing bias power without degrading a desired vertical sidewall profile.

94. 发明授权

US4963176A Method for making glass fiber mats using controllable fiber glass strand feeders 失效
标题翻译：使用可控玻璃纤维丝束进料器制造玻璃纤维垫的方法
公开(公告)号：US4963176A
公开(公告)日：1990-10-16
申请号：US418058
申请日：1989-10-06
申请人： Paul E. Bailey , Shahid Rauf
发明人： Paul E. Bailey , Shahid Rauf
IPC分类号： C03B37/10 , D01G25/00 , D04H3/05
CPC分类号： D04H3/05
摘要： This invention relates to improvements in making mats of continuous fiber strand using controlled reciprocating strand feeders. More particularly, the invention relates to improvements in making continuous fiber glass strand mats having more uniform density by electronically controlling both the rate of reciprocation and the rate at which strands are deposited onto the surface of a moving conveyor while also reducing the vibration associated with the feeders. Still more particularly, the invention relates to improvements in the production of two continuous fiber glass strand mats, one having uniform mechanical properties while the other possesses directionally dependent ones.In the preferred embodiment, brushless stepper or indexing motors are used to reverse the direction of reciprocating strand feeders quickly and smoothly so as to minimize their vibration. Also provided are variable speed electric motors in conjunction with a programmable logic controller and frequency inverter to adjust the rate at which strand is deposited by the feeders onto the moving conveyor.It is shown, by way of example, that these improvements result in increased uniformity of both mat density and thickness.

95. 发明申请

US20110120505A1 APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING 审中-公开
标题翻译：背景清洁期间前侧保护的装置和方法
公开(公告)号：US20110120505A1
公开(公告)日：2011-05-26
申请号：US13017569
申请日：2011-01-31
申请人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
发明人： IMAD YOUSIF , Ying Rui , Nancy Fung , Martin Jeffrey Salinas , Ajit Balakrishna , Anchel Sheyner , Shahid Rauf , Walter R. Merry
IPC分类号： B08B3/00 , B08B13/00 , H05H1/24 , B05B1/00
CPC分类号： H01L21/6708 , B05B1/18
摘要： Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.
摘要翻译：本发明的实施例提供了在处理基板的侧面和背面时用于正面保护的装置和方法。本发明的一个实施例提供了一种喷淋头，其配置为在背面蚀刻处理期间向基板的前侧提供净化气体。喷头包括构造成设置在基板的前侧上的主体。主体具有配置为面向基板的前侧的工艺表面。处理表面具有外圆周区域，中心区域，外部中心区域和中心区域之间的中间区域。第一多个孔分布在外部圆形区域中，并被配置成将清洗气体引导到衬底前侧的边缘区域。没有气体输送孔分布在中间区域的大部分内。

96. 发明申请

US20090218043A1 GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER 失效
标题翻译：气体流平衡板适用于基板工艺室
公开(公告)号：US20090218043A1
公开(公告)日：2009-09-03
申请号：US12038887
申请日：2008-02-28
申请人： Ajit Balakrishna , Shahid Rauf , Andrew Nguyen , Michael D. Willwerth , Valentin N. Todorow
发明人： Ajit Balakrishna , Shahid Rauf , Andrew Nguyen , Michael D. Willwerth , Valentin N. Todorow
IPC分类号： H01L21/306
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
摘要翻译：提供流量均衡器板用于衬底处理室。流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

97. 发明申请

US20090162262A1 Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead 审中-公开
标题翻译：等离子体反应器气体分配板，其具有与喷淋头并排的路径分流歧管
公开(公告)号：US20090162262A1
公开(公告)日：2009-06-25
申请号：US12004524
申请日：2007-12-19
申请人： Kallol Bera , Shahid Rauf
发明人： Kallol Bera , Shahid Rauf
IPC分类号： B01J19/08
CPC分类号： H01J37/3244 , H01J37/32449
摘要： A path splitting manifold of a showerhead assembly comprises a gas supply inlet and a side wall and plural gas outlets extending radially through the side wall. The path splitting manifold further comprises a plurality of channels comprising plural paths between the inlet and respective ones of the plural outlets. A showerhead is adjacent the side wall and is open to the plural outlets. In one embodiment, the paths are of equal lengths.
摘要翻译：喷头组件的路径分流歧管包括气体供应入口和侧壁以及径向延伸穿过侧壁的多个气体出口。所述路径分流歧管还包括多个通道，所述通道包括所述入口与所述多个出口中的相应的出口之间的多条路径。淋浴头与侧壁相邻，并且对多个出口开放。在一个实施例中，路径具有相等的长度。

98. 发明申请

US20090162261A1 Plasma reactor gas distribution plate having a vertically stacked path splitting manifold 审中-公开
标题翻译：等离子体反应器气体分配板，其具有垂直堆叠的路径分流歧管
公开(公告)号：US20090162261A1
公开(公告)日：2009-06-25
申请号：US12004499
申请日：2007-12-19
申请人： Kallol Baera , Shahid Rauf
发明人： Kallol Baera , Shahid Rauf
IPC分类号： B01J19/08
CPC分类号： H01J37/32449 , H01J37/3244
摘要： In a gas distribution showerhead assembly, a circular path splitting manifold having an axis of symmetry comprises a gas supply inlet, an enclosure with plural gas outlets extending through the enclosure, and a plurality of channels stacked along the axis of symmetry, and comprising plural paths of equal lengths between the inlet and respective ones of the plural outlets. A showerhead open to the plural outlets comprises a showerhead floor and a plurality of gas injection holes extending axially through the floor of the showerhead.
摘要翻译：在气体分配喷头组件中，具有对称轴的圆形路径分流歧管包括气体供给入口，具有延伸穿过外壳的多个气体出口的外壳和沿对称轴堆叠的多个通道，并且包括多个路径在入口和多个出口中的相应的出口之间具有相等的长度。通向多个出口的喷头包括喷头底板和沿着喷淋头的地板轴向延伸的多个气体注入孔。

99. 发明申请

US20080211102A1 LATERALLY GROWN NANOTUBES AND METHOD OF FORMATION 有权
标题翻译：侧面研制纳米管及其形成方法
公开(公告)号：US20080211102A1
公开(公告)日：2008-09-04
申请号：US12099557
申请日：2008-04-08
申请人： Marius K. Orlowski , Shahid Rauf , Peter L.G. Ventzek
发明人： Marius K. Orlowski , Shahid Rauf , Peter L.G. Ventzek
IPC分类号： H01L29/40
CPC分类号： H01L21/76838 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/89 , Y10S977/891 , Y10S977/932 , Y10S977/939 , H01L2924/00
摘要： A semiconductor device has lateral conductors or traces that are formed of nanotubes such as carbon. A sacrificial layer is formed overlying the substrate. A dielectric layer is formed overlying the sacrificial layer. A lateral opening is formed by removing a portion of the dielectric layer and the sacrificial layer which is located between two columns of metallic catalysts. The lateral opening includes a neck portion and a cavity portion which is used as a constrained space to grow a nanotube. A plasma is used to apply electric charge that forms an electric field which controls the direction of formation of the nanotubes. Nanotubes from each column of metallic catalyst are laterally grown and either abut or merge into one nanotube. Contact to the nanotube may be made from either the neck portion or the columns of metallic catalysts.
摘要翻译：半导体器件具有由碳纳米管形成的横向导体或迹线。覆盖衬底上形成牺牲层。覆盖在牺牲层上的电介质层。通过去除位于两列金属催化剂之间的介电层和牺牲层的一部分来形成侧向开口。横向开口包括颈部和空腔部分，其用作用于生长纳米管的约束空间。使用等离子体来施加形成控制纳米管形成方向的电场的电荷。来自每列金属催化剂的纳米管横向生长并邻接或合并成一个纳米管。与纳米管的接触可以由金属催化剂的颈部或者柱子制成。

100. 发明申请

US20080119046A1 METHOD OF MAKING A CONTACT ON A BACKSIDE OF A DIE 有权
标题翻译：在DIE背面制作接触的方法
公开(公告)号：US20080119046A1
公开(公告)日：2008-05-22
申请号：US11562161
申请日：2006-11-21
申请人： Terry G. Sparks , Shahid Rauf
发明人： Terry G. Sparks , Shahid Rauf
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05572 , H01L2224/13025 , H01L2224/13111 , H01L2224/16146 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00014 , H01L2924/00012 , H01L2224/05552
摘要： A method of forming a semiconductor device includes forming active circuitry over a semiconductor substrate, wherein the semiconductor substrate has a first major surface and a second major surface and the first active circuitry is formed over the first major surface of the semiconductor substrate. A via is formed within the first semiconductor substrate, wherein the via extends from the first active circuitry to the second major surface of the first semiconductor substrate. A dielectric layer is formed over the second major surface and adjacent the first via. The dielectric layer may include nitrogen and silicon and may be formed by a low pressure, low temperature, or both plasma process.
摘要翻译：形成半导体器件的方法包括在半导体衬底上形成有源电路，其中半导体衬底具有第一主表面和第二主表面，并且第一有源电路形成在半导体衬底的第一主表面上。通孔形成在第一半导体衬底内，其中通孔从第一有源电路延伸到第一半导体衬底的第二主表面。介电层形成在第二主表面上并与第一通孔相邻。电介质层可以包括氮和硅，并且可以通过低压，低温或两种等离子体工艺形成。

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