专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20080001245A1 SEMICONDUCTOR PHOTO DETECTING ELEMENT, MANUFACTURING METHOD OF THE SAME, AND MANUFACTURING METHOD OF OPTOELECTRONIC INTEGRATED CIRCUIT 有权
标题翻译：半导体照相检测元件及其制造方法，以及光电集成电路的制造方法
公开(公告)号：US20080001245A1
公开(公告)日：2008-01-03
申请号：US11771588
申请日：2007-06-29
申请人： Yoshihiro YONEDA , Ryuji YAMABI
发明人： Yoshihiro YONEDA , Ryuji YAMABI
IPC分类号： H01L31/00
CPC分类号： H01L31/105 , H01L31/03046 , H01L31/1035 , H01L31/18
摘要： A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm.
摘要翻译：半导体光电检测元件包括PIN型光检测元件和窗半导体层。 PIN型光检测元件具有半导体衬底，第一半导体层，第二半导体层和第三半导体层。第一半导体层设置在半导体衬底上，与半导体衬底晶格匹配，包括第一导电型掺杂剂，并且具有第一带隙能量。第二半导体层设置在第一半导体层上，具有第一带隙能量，并且第一导电类型掺杂物的浓度低于第一半导体层的浓度或基本上未掺杂。第三半导体层设置在第二半导体层上。窗口半导体层具有比相对于第二半导体层的光入射侧的第一带隙能量大的第二带隙能量，并且具有5nm至50nm的厚度。

92. 发明申请

US20060273421A1 Semiconductor photodetector and method for manufacturing the same 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US20060273421A1
公开(公告)日：2006-12-07
申请号：US11259196
申请日：2005-10-27
申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
发明人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
IPC分类号： H01L31/107
CPC分类号： H01L31/1864 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/107 , H01L31/1075
摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要翻译：为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

93. 发明授权

US07105798B2 Semiconductor light-receiving device with multiple potentials applied to layers of multiple conductivities 有权
标题翻译：具有多个电位的半导体光接收装置应用于多个电导率层
公开(公告)号：US07105798B2
公开(公告)日：2006-09-12
申请号：US10665259
申请日：2003-09-22
申请人： Gang Wang , Yoshihiro Yoneda
发明人： Gang Wang , Yoshihiro Yoneda
IPC分类号： H01L31/00
CPC分类号： H01L27/1443 , H01L31/02019 , H01L31/105 , H01L31/107 , H01L2224/48091 , H01L2224/48137 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-receiving device includes: a substrate that has a first surface and a second surface facing each other; a first semiconductor layer that is formed on the first surface of the substrate and includes at least one semiconductor layer of a first conductivity type; a light absorption layer that is formed on the first semiconductor layer and generates carriers in accordance with incident light; a second semiconductor layer that is formed on the light absorption layer and includes at least one semiconductor layer of a second conductivity type; a first electrode part that is electrically connected to the first semiconductor layer and applies a first potential thereto; a second electrode part that is electrically connected to the second semiconductor layer and applies a second potential thereto; and a third semiconductor layer of the second conductivity type that is interposed between the first surface of the substrate and the first semiconductor layer.
摘要翻译：半导体光接收装置包括：具有彼此面对的第一表面和第二表面的基板; 第一半导体层，其形成在所述基板的所述第一表面上，并且包括至少一个第一导电类型的半导体层; 形成在第一半导体层上并根据入射光产生载流子的光吸收层; 第二半导体层，其形成在所述光吸收层上并且包括至少一个第二导电类型的半导体层; 电连接到第一半导体层并向其施加第一电位的第一电极部分; 电连接到第二半导体层并向其施加第二电位的第二电极部分; 以及介于基板的第一表面和第一半导体层之间的第二导电类型的第三半导体层。

94. 发明授权

US06717069B2 Surface-mounting substrate and structure comprising substrate and part mounted on the substrate 有权
标题翻译：表面安装基板和结构包括基板和部件安装在基板上
公开(公告)号：US06717069B2
公开(公告)日：2004-04-06
申请号：US09820470
申请日：2001-03-29
申请人： Yoshihiro Yoneda
发明人： Yoshihiro Yoneda
IPC分类号： H05K111
CPC分类号： H01L24/16 , H01L23/49822 , H01L2224/10175 , H01L2224/1134 , H01L2224/13144 , H01L2224/16238 , H01L2224/81191 , H01L2224/81395 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/3841 , H05K1/113 , H05K1/114 , H05K3/0023 , H05K3/184 , H05K3/4661 , H05K2201/09563 , H05K2201/09781 , H01L2924/00014 , H01L2224/13099
摘要： A surface-mounting substrate, for mounting thereon a part such as a semiconductor device, which comprises a core substrate, a plurality of layers of patterned wiring lines, which are separated from each other by an insulation layer interposed therebetween, vias piercing through the insulation layer to connect the wiring lines at the adjacent layers to each other, and a layer of connecting terminals to mount a part on the surface-mounting substrate, each of the connecting terminals connecting with the wiring line at the outermost layer of wiring lines, wherein the connecting terminal is filled in an outermost insulation layer provided at the surface of the surface-mounting substrate, and has a surface exposed at substantially the same level as the level of the surface of the outermost insulation layer. A structure comprising a surface-mounting substrate and a part mounted thereon, which comprises, as the substrate used, the surface-mounting substrate of the invention, is also disclosed.
摘要翻译：表面安装基板，用于在其上安装诸如半导体器件的部件，其包括芯基板，多层图案化布线，它们之间通过绝缘层彼此分离，通孔穿过绝缘体层，将相邻层的布线彼此连接，以及一层连接端子，以在表面安装基板上安装部件，每个连接端子与布线的最外层的布线连接，其中连接端子填充在设置在表面安装基板的表面的最外层绝缘层，并且具有以与最外层绝缘层的表面水平基本相同的水平露出的表面。还公开了一种包括表面安装基板和安装在其上的部件的结构，其包括作为所使用的基板的本发明的表面安装基板。

95. 发明授权

US06700208B1 Surface mounting substrate having bonding pads in staggered arrangement 有权
标题翻译：具有交错排列的接合垫的表面安装基板
公开(公告)号：US06700208B1
公开(公告)日：2004-03-02
申请号：US09691327
申请日：2000-10-18
申请人： Yoshihiro Yoneda
发明人： Yoshihiro Yoneda
IPC分类号： H01L2348
CPC分类号： H01L24/06 , H01L23/49838 , H01L24/49 , H01L2224/0401 , H01L2224/1134 , H01L2224/13144 , H01L2224/16238 , H01L2224/4943 , H01L2224/81385 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15787 , H01L2224/13099 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A surface mounting substrate is configured to surface mount a semiconductor element thereon, the semiconductor element having a plurality of protruding electrodes arranged in a staggered arrangement of two rows. A plurality of bonding pads formed on a substrate are arranged in a staggered arrangement corresponding to the staggered arrangement of the protruding electrodes of the semiconductor element. Each of the bonding pads includes a pad portion having a substantially uniform width and an end portion extending from the pad portion toward the other row of the bonding pads. The end portion of each of the bonding pads lacks a portion extending beyond a boundary between the end portion and the pad portion of the bonding pads arranged in the other row. Accordingly, a reliable mounting can be achieved even if the protruding electrodes are offset from bonding pads.
摘要翻译：表面安装基板被配置为在其上表面安装半导体元件，所述半导体元件具有以两列交错布置的布置的多个突起电极。形成在基板上的多个接合焊盘以对应于半导体元件的突出电极的交错布置的交错布置布置。每个接合焊盘包括具有基本均匀宽度的焊盘部分和从焊盘部分朝向焊盘的另一排延伸的端部。每个接合焊盘的端部缺少延伸超过布置在另一排中的接合焊盘的端部和焊盘部分之间的边界的部分。因此，即使突出电极偏离接合焊盘，也可以实现可靠的安装。

96. 发明授权

US4970042A Synthetic fibers having uneven surfaces method for melt-spinning 失效
标题翻译：用于熔融纺丝的合成纤维具有不均匀表面的方法
公开(公告)号：US4970042A
公开(公告)日：1990-11-13
申请号：US393051
申请日：1989-08-08
申请人： Hiroshi Kakiuchi , Setsuo Fukuhara , Michinobu Fujiwara , Hiroshi Maeda , Yutaka Shirakashi , Osamu Asakura , Yoshihiro Yoneda , Tetsuo Noda , Naoyuki Fujita
发明人： Hiroshi Kakiuchi , Setsuo Fukuhara , Michinobu Fujiwara , Hiroshi Maeda , Yutaka Shirakashi , Osamu Asakura , Yoshihiro Yoneda , Tetsuo Noda , Naoyuki Fujita
IPC分类号： A41G3/00 , D01D5/088 , D01D5/253 , D01F1/10 , D01F6/60
CPC分类号： A41G3/0083 , D01D5/0885 , D01D5/253 , D01F1/10 , D01F6/60 , Y10T428/2927 , Y10T428/2973 , Y10T428/2978
摘要： A synthetic fiber having an uneven surface structure consisting of wrinkles having ridges and recesses of the surface of the fiber and not presenting specular luster, which may be used, for example, as artificial hair for wigs, can be produced easily and stably by melt-spinning a starting synthetic resin such as nylon and passing the spun monofilament through a cooling bath at a temperature not lower than 30.degree. C. for a period of time sufficient for developing wrinkles in its surface. Inclusion of a pigment such as carbon black in an appropriate amount in the starting material is effective in providing dense distribution of wrinkles.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式