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1. 发明授权

US07105798B2 Semiconductor light-receiving device with multiple potentials applied to layers of multiple conductivities 有权
标题翻译：具有多个电位的半导体光接收装置应用于多个电导率层
公开(公告)号：US07105798B2
公开(公告)日：2006-09-12
申请号：US10665259
申请日：2003-09-22
申请人： Gang Wang , Yoshihiro Yoneda
发明人： Gang Wang , Yoshihiro Yoneda
IPC分类号： H01L31/00
CPC分类号： H01L27/1443 , H01L31/02019 , H01L31/105 , H01L31/107 , H01L2224/48091 , H01L2224/48137 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-receiving device includes: a substrate that has a first surface and a second surface facing each other; a first semiconductor layer that is formed on the first surface of the substrate and includes at least one semiconductor layer of a first conductivity type; a light absorption layer that is formed on the first semiconductor layer and generates carriers in accordance with incident light; a second semiconductor layer that is formed on the light absorption layer and includes at least one semiconductor layer of a second conductivity type; a first electrode part that is electrically connected to the first semiconductor layer and applies a first potential thereto; a second electrode part that is electrically connected to the second semiconductor layer and applies a second potential thereto; and a third semiconductor layer of the second conductivity type that is interposed between the first surface of the substrate and the first semiconductor layer.
摘要翻译：半导体光接收装置包括：具有彼此面对的第一表面和第二表面的基板; 第一半导体层，其形成在所述基板的所述第一表面上，并且包括至少一个第一导电类型的半导体层; 形成在第一半导体层上并根据入射光产生载流子的光吸收层; 第二半导体层，其形成在所述光吸收层上并且包括至少一个第二导电类型的半导体层; 电连接到第一半导体层并向其施加第一电位的第一电极部分; 电连接到第二半导体层并向其施加第二电位的第二电极部分; 以及介于基板的第一表面和第一半导体层之间的第二导电类型的第三半导体层。

2. 发明授权

US07368750B2 Semiconductor light-receiving device 失效
标题翻译：半导体光接收装置
公开(公告)号：US07368750B2
公开(公告)日：2008-05-06
申请号：US10665204
申请日：2003-09-22
申请人： Gang Wang , Yoshihiro Yoneda
发明人： Gang Wang , Yoshihiro Yoneda
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L31/105 , H01L31/1844 , Y02E10/544
摘要： A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrate and has a lower impurity concentration than the semiconductor layer of the first conduction type; a light absorption layer that is formed on the buffer layer and generates carriers in accordance with incident light; a semiconductor layer of a second conduction type that is formed on the light absorption layer; and a semiconductor intermediate layer that is interposed between the buffer layer and the light absorption layer, and has a forbidden bandwidth within a range lying between the forbidden bandwidth of the buffer layer and the forbidden bandwidth of the light absorption layer.
摘要翻译：半导体光接收装置包括：半绝缘基板; 形成在半绝缘基板上的第一导电型半导体层; 所述第一导电类型的缓冲层形成在所述半绝缘基板上并且具有比所述第一导电类型的半导体层更低的杂质浓度; 形成在缓冲层上并根据入射光产生载流子的光吸收层; 形成在所述光吸收层上的第二导电类型的半导体层; 以及介于缓冲层和光吸收层之间的半导体中间层，并且在缓冲层的禁止带宽和光吸收层的禁止带宽之间的范围内具有禁止带宽。

3. 发明授权

US09401969B2 Information processing system, information processing apparatus, and administration server 有权
标题翻译：信息处理系统，信息处理装置和管理服务器
公开(公告)号：US09401969B2
公开(公告)日：2016-07-26
申请号：US13065215
申请日：2011-03-16
申请人： Yoshihiro Yoneda , Naoki Miyabayashi
发明人： Yoshihiro Yoneda , Naoki Miyabayashi
IPC分类号： H04B5/00 , H04L29/08
CPC分类号： H04L67/303 , H04L67/14 , H04L67/34
摘要： A system and method for information processing is provided. In an embodiment of the present system and method, a connection target apparatus is detected at an information processing apparatus. Upon detection, the information processing apparatus generates apparatus information and transmits the apparatus information to a server via a communication path. Based on the apparatus information, the server generates connection information and transmits the connection information to the information processing apparatus. The information processing apparatus may use the connection information to establish communication with the connection target apparatus via another communication path.
摘要翻译：提供了一种用于信息处理的系统和方法。在本系统和方法的实施例中，在信息处理装置处检测连接目标装置。检测时，信息处理装置生成装置信息，并通过通信路径将装置信息发送到服务器。基于设备信息，服务器生成连接信息，并将连接信息发送到信息处理设备。信息处理装置可以使用连接信息，经由另一通信路径与连接对象装置建立通信。

4. 发明授权

US09396477B2 Information processing system, communication terminal, information processing unit and program 有权
标题翻译：信息处理系统，通信终端，信息处理单元和程序
公开(公告)号：US09396477B2
公开(公告)日：2016-07-19
申请号：US13463457
申请日：2012-05-03
申请人： Isao Soma , Naoki Miyabayashi , Yoshihiro Yoneda , Seiji Kuroda , Yasuharu Ishikawa , Kazuo Takada
发明人： Isao Soma , Naoki Miyabayashi , Yoshihiro Yoneda , Seiji Kuroda , Yasuharu Ishikawa , Kazuo Takada
IPC分类号： G06Q30/02 , H04W88/04
CPC分类号： H04W88/04 , G06Q30/02 , H04W4/80 , H04W76/14 , H04W76/30
摘要： There is provided an information processing system including a service provider unit, a communication terminal and an information processing unit. The communication terminal includes a terminal first communication section, a terminal second communication section to communicate with the information processing unit through a first communication channel, a terminal third communication section to communicate with the information processing unit through a second communication channel, and a terminal communication control section. The information processing unit includes a unit first communication section to communicate with the communication terminal through the first communication channel, a unit second communication section to communicate with the communication terminal through the second communication channel, a unit communication control section to switch communication channels with the communication terminal from the first communication channel to the second communication channel, and a unit processing section to perform service processing with the service provider unit.
摘要翻译：提供了一种包括服务提供商单元，通信终端和信息处理单元的信息处理系统。通信终端包括终端第一通信部，通过第一通信信道与信息处理部通信的终端第二通信部，通过第二通信信道与信息处理部通信的终端第三通信部，以及终端通信控制部分。信息处理单元包括通过第一通信信道与通信终端进行通信的单元第一通信部，通过第二通信信道与通信终端通信的单位第二通信部，与通信终端通过第二通信信道进行通信的单元通信控制部，通信终端从第一通信信道到第二通信信道，以及单元处理部，用于与服务提供者单元进行服务处理。

5. 发明授权

US08637329B2 Method for producing semiconductor optical integrated device 有权
标题翻译：半导体光集成器件的制造方法
公开(公告)号：US08637329B2
公开(公告)日：2014-01-28
申请号：US13537221
申请日：2012-06-29
申请人： Yoshihiro Yoneda , Hirohiko Kobayashi , Kenji Koyama , Masaki Yanagisawa , Kenji Hiratsuka
发明人： Yoshihiro Yoneda , Hirohiko Kobayashi , Kenji Koyama , Masaki Yanagisawa , Kenji Hiratsuka
IPC分类号： H01L21/027 , H01L33/00
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/2275 , H01S5/34306 , H01S2301/176
摘要： A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.
摘要翻译：一种半导体光学集成器件的制造方法，其特征在于，包括：形成包括第一和第二堆叠半导体层部分的衬底产品的步骤; 在所述第一和第二层叠半导体层部分上形成第一掩模，所述第一掩模包括条形第一图案区域和第二图案区域，所述第二图案区域包括第一端边缘; 形成条状台面结构; 去除第一掩模的第二图案区域; 在所述第二堆叠半导体层部分上形成第二掩模; 以及用第一和第二掩模选择性地生长掩埋的半导体层。第二掩模包括与第一掩模的第一端边缘分离的第二端边缘，第二端边缘相对于第一掩模的第一端边缘位于第二堆叠半导体层部分的沿预定方向的一侧上。

6. 发明授权

US08618638B2 Semiconductor optical modulator and method for manufacturing the same 有权
标题翻译：半导体光调制器及其制造方法
公开(公告)号：US08618638B2
公开(公告)日：2013-12-31
申请号：US13311837
申请日：2011-12-06
申请人： Yoshihiro Yoneda , Kenji Koyama , Hirohiko Kobayashi
发明人： Yoshihiro Yoneda , Kenji Koyama , Hirohiko Kobayashi
IPC分类号： H01L29/06 , H01L21/00 , G02B6/10
CPC分类号： G02F1/025 , G02F1/01708 , G02F2201/066 , G02F2201/12 , G02F2202/102
摘要： A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.
摘要翻译：公开了一种制造半导体光调制器的方法，其中该方法容易地形成包括用于p-欧姆金属的AuZn的金属膜，即使接触孔具有增强的纵横比。该方法首先形成包括半导体层的台面，然后通过被绝缘膜夹在中间的树脂层掩埋台面。树脂层提供达到台面顶部的开口，形成p欧姆金属。包括Ti的另一金属膜沿着开口形成在上绝缘膜上。

7. 发明授权

US08563342B2 Method of making semiconductor optical integrated device by alternately arranging spacers with integrated device arrays 有权
标题翻译：通过用集成器件阵列交替布置间隔物来制造半导体光学集成器件的方法
公开(公告)号：US08563342B2
公开(公告)日：2013-10-22
申请号：US13479567
申请日：2012-05-24
申请人： Yoshihiro Yoneda , Hirohiko Kobayashi , Kenji Koyama , Masaki Yanagisawa , Kenji Hiratsuka
发明人： Yoshihiro Yoneda , Hirohiko Kobayashi , Kenji Koyama , Masaki Yanagisawa , Kenji Hiratsuka
IPC分类号： H01L21/00
CPC分类号： H01S5/02272 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/02264 , H01S5/0265 , H01S5/028 , H01S5/0425 , H01S5/2224 , H01S5/2275 , H01S5/34306 , H01S2301/176
摘要： A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction.
摘要翻译：制造半导体光学集成器件的方法包括以下步骤：在衬底上形成包括具有第一焊盘和第二光学半导体元件的第一光学半导体元件的多个半导体集成器件; 通过切割衬底形成多个条形半导体光学集成器件阵列，每个半导体光学集成器件阵列包括两个或更多个半导体光学集成器件; 在基板的厚度方向交替布置多个半导体光学集成器件阵列和多个间隔物，以便固定就位; 以及在所述半导体光学集成器件阵列的刻面上形成涂膜。此外，间隔件具有面向第一接合焊盘的可动部，可动部朝向第一接合焊盘突出，并且能够沿突出方向移位。

8. 发明授权

US08483744B2 Communication apparatus, communication system, notification method, and program product 有权
标题翻译：通信设备，通信系统，通知方法和程序产品
公开(公告)号：US08483744B2
公开(公告)日：2013-07-09
申请号：US12502760
申请日：2009-07-14
申请人： Kazuo Takada , Isao Soma , Seiji Kuroda , Yasuharu Ishikawa , Yoshihiro Yoneda , Naoki Miyabayashi
发明人： Kazuo Takada , Isao Soma , Seiji Kuroda , Yasuharu Ishikawa , Yoshihiro Yoneda , Naoki Miyabayashi
IPC分类号： H04B7/00
CPC分类号： H04W36/0016 , H04L63/18 , H04M1/72597 , H04W4/80 , H04W12/06 , H04W36/0038 , H04W68/02
摘要： There is provided a communication apparatus including: a first communication unit having a first communication range; a second communication unit having a second communication range wider than the first communication range; a control unit which transmits a request signal for starting communication via the second communication unit from the first communication unit to another communication apparatus, and transmits authentication information from the second communication unit to the another communication apparatus in the case where it is determined that communication with the another communication apparatus via the second communication unit is possible based on a response signal after the first communication unit receives the response signal in response to the request signal; and a notification unit which notifies a user after the second communication unit receives a result of authentication based on the authentication information.
摘要翻译：提供一种通信装置，包括：具有第一通信范围的第一通信单元; 第二通信单元，具有比第一通信范围宽的第二通信范围; 控制单元，其经由第二通信单元从第一通信单元向另一通信设备发送用于开始通信的请求信号，并且在确定与第二通信单元的通信的情况下，将认证信息从第二通信单元发送到另一通信设备基于第一通信单元响应于该请求信号接收到响应信号的响应信号，经由第二通信单元的另一通信装置是可能的; 以及通知单元，其在所述第二通信单元基于所述认证信息接收到认证结果之后通知用户。

9. 发明申请

US20120148184A1 SEMICONDUCTOR OPTICAL MODULATOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体光学调制器及其制造方法
公开(公告)号：US20120148184A1
公开(公告)日：2012-06-14
申请号：US13311837
申请日：2011-12-06
申请人： Yoshihiro Yoneda , Kenji Koyama , Hirohiko Kobayashi
发明人： Yoshihiro Yoneda , Kenji Koyama , Hirohiko Kobayashi
IPC分类号： G02F1/025 , H01L21/302
CPC分类号： G02F1/025 , G02F1/01708 , G02F2201/066 , G02F2201/12 , G02F2202/102
摘要： A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.
摘要翻译：公开了一种制造半导体光调制器的方法，其中该方法容易地形成包括用于p-欧姆金属的AuZn的金属膜，即使接触孔具有增强的纵横比。该方法首先形成包括半导体层的台面，然后通过被绝缘膜夹在中间的树脂层掩埋台面。树脂层提供达到台面顶部的开口，形成p欧姆金属。包括Ti的另一金属膜沿着开口形成在上绝缘膜上。

10. 发明授权

US07988945B2 Niobium monoxide 有权
标题翻译：一氧化二
公开(公告)号：US07988945B2
公开(公告)日：2011-08-02
申请号：US12303127
申请日：2007-06-26
申请人： Yoshihiro Yoneda , Shuji Ogura , Isamu Yashima
发明人： Yoshihiro Yoneda , Shuji Ogura , Isamu Yashima
IPC分类号： C01G33/00
CPC分类号： C01G33/00 , C01P2002/72 , C01P2006/12 , C01P2006/14 , C01P2006/40 , H01G9/052 , H01G9/0525
摘要： An object of the present invention is to provide a niobium monoxide able to realize large capacitance in a miniature sized capacitor. The invention relates to a niobium monoxide having a porous structure comprising particles, characterized in that the niobium monoxide has a full-width at half maximum of an X-ray diffraction peak corresponding to a (111) plane or an X-ray diffraction peak corresponding to a (200) plane of 0.21° to 1.0°. The niobium monoxide has a large specific surface area and porosity, and is especially suitable for use in a capacitor.
摘要翻译：本发明的目的是提供一种能够在小型电容器中实现大电容的铌氧化物。本发明涉及一种具有包含颗粒的多孔结构的铌氧化物，其特征在于，所述铌氧化物具有对应于（111）面的X射线衍射峰的半峰全宽或对应于X射线衍射峰到（2.21）至（1.0）的（200）平面。一氧化铌具有大的比表面积和孔隙率，特别适用于电容器。

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