专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US07597757B2 ZnO film with C-axis orientation 失效
标题翻译：具有C轴取向的ZnO膜
公开(公告)号：US07597757B2
公开(公告)日：2009-10-06
申请号：US11281033
申请日：2005-11-17
申请人： John F. Conley, Jr. , Yoshi Ono
发明人： John F. Conley, Jr. , Yoshi Ono
IPC分类号： C30B21/02
CPC分类号： C30B25/02 , C30B29/16 , H01L41/0815 , H01L41/316 , H01L41/319
摘要： A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al2O3 film overlying the substrate; and, forming a ZnO film overlying the Al2O3 film at a substrate temperature of about 170° C., having a C-axis preference responsive to the adjacent Al2O3 film. The substrate can be a material such as Silicon (Si) (100), Si (111), Si (110), quartz, glass, plastic, or zirconia. The Al2O3 film can be deposited using a chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering process. Typically, the Al2O3 layer has a thickness in the range of about 3 to 15 nanometers (nm). The step of forming the ZnO film having a C-axis preference typically means that the ZnO film has a (002) peak at least 5 times greater than the (100) peak, as measured by X-ray diffraction (XRD).
摘要翻译：具有C轴偏好的ZnO膜具有相应的制造方法。该方法包括：形成衬底; 在衬底上形成非晶Al2O3膜; 并且在约170℃的衬底温度下形成覆盖Al 2 O 3膜的ZnO膜，具有响应于相邻Al 2 O 3膜的C轴偏好。衬底可以是诸如硅（Si）（100），Si（111），Si（110），石英，玻璃，塑料或氧化锆的材料。可以使用化学气相沉积（CVD），原子层沉积（ALD）或溅射工艺来沉积Al 2 O 3膜。通常，Al 2 O 3层的厚度在约3至15纳米（nm）的范围内。形成具有C轴偏好的ZnO膜的步骤通常意味着通过X射线衍射（XRD）测量，ZnO膜具有比（100）峰的至少5倍的（002）峰。

92. 发明授权

US07589464B2 Nanotip electrode electroluminescence device with contoured phosphor layer 失效
标题翻译：具有成像荧光粉层的纳米技术电极电致发光器件
公开(公告)号：US07589464B2
公开(公告)日：2009-09-15
申请号：US11070051
申请日：2005-03-01
申请人： John F. Conley, Jr. , David R. Evans , Wei Gao , Yoshi Ono
发明人： John F. Conley, Jr. , David R. Evans , Wei Gao , Yoshi Ono
IPC分类号： H05B33/26
CPC分类号： H05B33/10 , B82Y20/00 , C09K11/54 , C09K11/642 , H01L33/18 , H05B33/14
摘要： A device and a fabrication method are provided for an EL device with a nanotip-contoured phosphor layer. The method comprises: forming a bottom electrode with nanotips; forming a phosphor layer overlying the bottom electrode, having irregularly-shaped top and bottom surfaces; and, forming a top electrode overlying the phosphor layer. The bottom electrode top surface has a nanotip contour, and the phosphor layer irregularly-shaped top and bottom surfaces have contours approximately matching the bottom electrode top surface nanotip contour. In one aspect, a contoured bottom dielectric is interposed between the bottom electrode and the phosphor layer, having top and bottoms surfaces with contours approximately matching the nanotip contour. Likewise, a top dielectric may be interposed between the top electrode and the phosphor layer, having a bottom surface with a contour approximately matching the contour of phosphor layer top surface.
摘要翻译：提供了一种具有纳米尺度荧光体层的EL器件的器件和制造方法。该方法包括：形成具有纳米尖端的底部电极; 形成覆盖在底部电极上的荧光体层，具有不规则形状的顶部和底部表面; 并且形成覆盖磷光体层的顶部电极。底部电极顶表面具有纳米尖端轮廓，并且荧光体层不规则形状的顶表面和底表面具有与底部电极顶表面纳米尖端轮廓近似匹配的轮廓。在一个方面，在底部电极和荧光体层之间插入有轮廓的底部电介质，其具有顶部和底部表面，轮廓几乎与纳米尖端轮廓相匹配。类似地，顶部电介质可以插入在顶部电极和荧光体层之间，具有大致与荧光体层顶表面的轮廓相匹配的轮廓的底面。

93. 发明申请

US20090142673A1 SEMI-TRANSPARENT FILM GRAYSCALE MASK 有权
标题翻译：半透明薄膜面膜
公开(公告)号：US20090142673A1
公开(公告)日：2009-06-04
申请号：US11950196
申请日：2007-12-04
申请人： Wei Gao , Bruce D. Ulrich , Yoshi Ono
发明人： Wei Gao , Bruce D. Ulrich , Yoshi Ono
IPC分类号： G03F1/00
CPC分类号： G03F1/50
摘要： A grayscale mask made from semi-transparent film layers is provided, along with an associated fabrication method. The method provides a transparent substrate, such as quartz, with a surface. A first layer of a semi-transparent film having a surface with a first surface area, is formed overlying the substrate surface. At least a second layer of the semi-transparent film having a surface with a second surface area greater than the first surface area, is formed overlying the first layer. A first vertical region is formed having a light first attenuation parameter through the combination of substrate, first layer, and second layer. A second vertical region is formed having a light second attenuation parameter through the combination of the first layer and substrate, and a third vertical region is formed having a light third attenuation parameter through the substrate.
摘要翻译：提供了由半透明膜层制成的灰度掩模，以及相关的制造方法。该方法提供具有表面的透明衬底，例如石英。具有第一表面积的表面的半透明膜的第一层形成在衬底表面上。至少第二层半透明膜具有第二表面积大于第一表面积的表面，覆盖在第一层上。通过基板，第一层和第二层的组合形成具有第一衰减参数的第一垂直区域。通过第一层和衬底的组合形成具有第二衰减参数的第二垂直区域，并且通过衬底形成具有第三衰减参数的第三垂直区域。

94. 发明授权

US07531466B2 Metal organic deposition precursor solution synthesis and terbium-doped SiO2 thin film deposition 失效
标题翻译：金属有机沉积前驱体溶液合成和铽掺杂SiO2薄膜沉积
公开(公告)号：US07531466B2
公开(公告)日：2009-05-12
申请号：US11494141
申请日：2006-07-26
申请人： Wei-Wei Zhuang , Yoshi Ono , Tingkai Li
发明人： Wei-Wei Zhuang , Yoshi Ono , Tingkai Li
IPC分类号： H01L21/31
CPC分类号： C23C18/1295 , C23C18/1208 , C23C18/1279 , C23C18/1283
摘要： A method of making a doped silicon oxide thin film using a doped silicon oxide precursor solution includes mixing a silicon source in an organic acid and adding 2-methoxyethyl ether to the silicon source and organic acid to from a preliminary precursor solution. The resultant solution is heated, stirred and filtered. A doping impurity is dissolved in 2-methoxyethanol to from a doped source solution, and the resultant solution mixed with the previously described resultant solution to from a doped silicon oxide precursor solution. A doped silicon oxide thin film if formed on a wafer by spin coating. The thin film and the wafer are baked at progressively increasing temperatures and the thin film and the wafer are annealed.
摘要翻译：使用掺杂的氧化硅前体溶液制造掺杂的氧化硅薄膜的方法包括将有机酸中的硅源混合并向硅源和有机酸中加入2-甲氧基乙醚至初始前体溶液。将所得溶液加热，搅拌并过滤。将掺杂杂质从掺杂的源溶液中溶解在2-甲氧基乙醇中，并将所得溶液与先前所述的溶液混合从掺杂的氧化硅前体溶液中。如果通过旋涂在晶片上形成掺杂的氧化硅薄膜。在逐渐升高的温度下烘烤薄膜和晶片，并对薄膜和晶片进行退火。

95. 发明授权

US07473150B2 Zinc oxide N-I-N electroluminescence device 失效
标题翻译：氧化锌N-I-N电致发光器件
公开(公告)号：US07473150B2
公开(公告)日：2009-01-06
申请号：US11123603
申请日：2005-05-06
申请人： Sheng Teng Hsu , Yoshi Ono
发明人： Sheng Teng Hsu , Yoshi Ono
IPC分类号： H01J9/00 , H01J9/24
CPC分类号： H01L33/0004 , H01L33/26
摘要： A method is provided for forming a ZnO Si N—I—N EL device. The method comprises: forming an n-doped Si layer; forming a Si oxide (SiO2) layer overlying the n-doped Si layer; forming an n-type ZnO layer overlying the SiO2 layer; and, forming an electrode overlying the ZnO layer. The electrode can be a transparent material such as indium tin oxide, zinc oxyfluoride, or a conductive plastic. The n-doped Si layer can be polycrystalline or single-crystal Si. In some aspects, the Si oxide layer has a thickness in the range of 1 to 20 nm. More preferably, the thickness is 2 to 5 nm. The ZnO layer thickness is in the range of 10 to 200 nm.
摘要翻译：提供了一种用于形成ZnO Si N-1-N EL器件的方法。该方法包括：形成n掺杂Si层; 形成覆盖在n掺杂Si层上的Si氧化物（SiO 2）层; 形成覆盖在SiO 2层上的n型ZnO层; 并且形成覆盖ZnO层的电极。电极可以是透明材料，例如氧化铟锡，氟氧化锌或导电塑料。 n掺杂Si层可以是多晶或单晶Si。在一些方面，Si氧化物层的厚度在1至20nm的范围内。更优选为2〜5nm。 ZnO层的厚度在10〜200nm的范围内。

96. 发明授权

US07439187B2 Grayscale reticle for precise control of photoresist exposure 失效
标题翻译：用于精确控制光刻胶曝光的灰度光罩
公开(公告)号：US07439187B2
公开(公告)日：2008-10-21
申请号：US11588891
申请日：2006-10-27
申请人： Yoshi Ono , Bruce D. Ulrich , Pooran Chandra Joshi
发明人： Yoshi Ono , Bruce D. Ulrich , Pooran Chandra Joshi
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： G03F1/54 , G03F1/50 , Y10S438/942
摘要： A method of fabricating a grayscale reticule includes preparing a quartz substrate; depositing a layer of silicon-rich oxide on the quartz substrate; depositing a layer of silicon nitride as an oxidation barrier layer on the silicon-rich oxide layer; depositing and patterning a layer of photoresist; etching the silicon nitride layer with a pattern for the silicon nitride layer; removing the photoresist; cleaning the quartz substrate and the remaining layers; oxidizing the quartz substrate and the layers thereon, thereby converting the silicon-rich oxide layer to a transparent silicon dioxide layer; removing the remaining silicon nitride layer; forming the quartz substrate and the silicon dioxide thereon into a reticule; and using the reticule to pattern a microlens array.
摘要翻译：制造灰度网格的方法包括制备石英基片; 在石英衬底上沉积一层富硅氧化物; 在富硅氧化物层上沉积氮化硅层作为氧化阻挡层; 沉积和图案化一层光致抗蚀剂; 用氮化硅层的图案蚀刻氮化硅层; 去除光致抗蚀剂; 清洗石英衬底和其余层; 氧化石英衬底及其上的层，从而将富硅氧化物层转化为透明二氧化硅层; 去除剩余的氮化硅层; 在其上形成石英衬底和二氧化硅到网状物中; 并使用网状物来形成微透镜阵列。

97. 发明授权

US07400020B2 Conductive niobium oxide gate MOSFET 失效
标题翻译：导电铌氧化物栅极MOSFET
公开(公告)号：US07400020B2
公开(公告)日：2008-07-15
申请号：US11479045
申请日：2006-06-30
申请人： Wei Gao , Yoshi Ono
发明人： Wei Gao , Yoshi Ono
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/66583 , H01L21/28088 , H01L21/28194 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： MOSFET gate structures are provided comprising a niobium monoxide gate, overlying a gate dielectric. The niobium monoxide gate may have a low work function suitable for use as an NMOS gate.
摘要翻译：提供包括覆盖栅极电介质的铌氧化物栅极的MOSFET栅极结构。铌氧化物栅可能具有适合用作NMOS栅极的低功函数。

98. 发明申请

US20080035946A1 Rare earth element-doped silicon oxide film electroluminescence device 审中-公开
标题翻译：稀土元素掺杂氧化硅膜电致发光器件
公开(公告)号：US20080035946A1
公开(公告)日：2008-02-14
申请号：US11973525
申请日：2007-10-09
申请人： Wei Gao , Tingkai Li , Robert Barrowcliff , Yoshi Ono , Sheng Hsu
发明人： Wei Gao , Tingkai Li , Robert Barrowcliff , Yoshi Ono , Sheng Hsu
IPC分类号： H01L33/00 , H01L23/58
CPC分类号： H05B33/145 , H01L21/3115 , H01L31/03046 , Y02E10/544
摘要： A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputtering the first and second targets; forming a Si-rich Si oxide (SRSO) film on a substrate, doped with the first rare earth element; and, annealing the rare earth element-doped SRSO film. The first target is doped with a rare earth element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymium (Pr), or terbium (Tb). The sputtering power is in the range of about 75 to 300 watts (W). Different sputtering powers are applied to the two targets. Also, deposition can be controlled by varying the effective areas of the two targets. For example, one of the targets can be partially covered.
摘要翻译：提供了一种用于形成具有纳米晶体（nc）Si颗粒的稀土（RE）元素掺杂硅（Si）氧化物膜的方法。该方法包括：提供嵌入有第一稀土元素的Si的第一靶; 提供Si的第二个目标; 共溅射第一和第二个目标; 在掺杂有第一稀土元素的衬底上形成富Si氧化硅（SRSO）膜; 并对稀土元素掺杂的SRSO膜退火。第一靶用铒（Er），镱（Yb），铈（Ce），镨（Pr）或铽（Tb）等稀土元素掺杂。溅射功率在约75至300瓦（W）的范围内。不同的溅射功率被应用于两个目标。此外，可以通过改变两个目标的有效面积来控制沉积。例如，其中一个目标可以被部分覆盖。

99. 发明授权

US07309621B2 Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition 失效
标题翻译：使用选择性纳米线沉积制造纳米线CHEMFET传感器器件的方法
公开(公告)号：US07309621B2
公开(公告)日：2007-12-18
申请号：US11115814
申请日：2005-04-26
申请人： John F. Conley, Jr. , Yoshi Ono , Lisa H. Stecker
发明人： John F. Conley, Jr. , Yoshi Ono , Lisa H. Stecker
IPC分类号： H01L51/40 , H01L21/00 , H01L21/8238
CPC分类号： G01N27/4146 , B82Y10/00 , B82Y15/00 , G11C2213/16 , H01L51/0048 , H01L51/0545
摘要： A method of fabricating a nanowire CHEMFET sensor mechanism includes preparing a silicon substrate; depositing a polycrystalline ZnO seed layer on the silicon substrate; patterning and etching the polycrystalline ZnO seed layer; depositing an insulating layer over the polycrystalline ZnO seed layer and the silicon substrate; patterning and etching the insulating layer to form contact holes to a source region and a drain region; metallizing the contact holes to form contacts for the source region and the drain region; depositing a passivation dielectric layer over the insulating layer and the contacts; patterning the passivation layer and etching to expose the polycrystalline ZnO seed layer between the source region and the drain region; and growing ZnO nanostructures on the exposed ZnO seed layer to form a ZnO nanostructure CHEMFET sensor device.
摘要翻译：制造纳米线CHEMFET传感器机构的方法包括制备硅衬底; 在硅衬底上沉积多晶ZnO种子层; 图案化和蚀刻多晶ZnO种子层; 在多晶ZnO种子层和硅衬底上沉积绝缘层; 图案化和蚀刻绝缘层以形成到源极区域和漏极区域的接触孔; 金属化接触孔以形成用于源极区域和漏极区域的触点; 在所述绝缘层和所述触点上沉积钝化介电层; 图案化钝化层并蚀刻以在源极区域和漏极区域之间暴露多晶ZnO晶种层; 并在曝光的ZnO种子层上生长ZnO纳米结构以形成ZnO纳米结构CHEMFET传感器装置。

100. 发明授权

US07259055B2 Method of forming high-luminescence silicon electroluminescence device 失效
标题翻译：形成高发光硅电致发光器件的方法
公开(公告)号：US07259055B2
公开(公告)日：2007-08-21
申请号：US11066713
申请日：2005-02-24
申请人： Tingkai Li , Pooran Chandra Joshi , Wei Gao , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Pooran Chandra Joshi , Wei Gao , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L21/8238
CPC分类号： H01L31/03046 , Y02E10/544 , Y02P70/521
摘要： A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).
摘要翻译：提供一种用于形成高发光Si电致发光（EL）荧光体的方法，其具有由Si荧光体制成的EL器件。该方法包括：用Si纳米晶体沉积富含氧的氧化物（SRO）膜，折射率在1.5至2.1范围内，孔隙率在5至20％的范围内; 并且在氧气氛中对SRO膜进行后退火。 DC溅射或PECVD工艺可用于沉积SRO膜。在一个方面，该方法还包括：HF缓冲氧化物蚀刻（BOE）SRO膜; 并且再次氧化SRO膜，以在SRO膜中的Si纳米晶体周围形成SiO 2层。在一个方面，SRO膜通过在氧气气氛中退火再次氧化。以这种方式，在具有1至5纳米（nm）范围内的厚度的Si纳米晶体周围形成SiO 2层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式