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91. 发明授权

US5643826A Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5643826A
公开(公告)日：1997-07-01
申请号：US329644
申请日：1994-10-25
申请人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
发明人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/228
CPC分类号： H01L29/045 , H01L21/2022 , H01L27/1277 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78678 , H01L27/1296 , Y10S148/016
摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
摘要翻译：一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶电影。

92. 发明授权

US5612250A Method for manufacturing a semiconductor device using a catalyst 失效
标题翻译：使用催化剂制造半导体器件的方法
公开(公告)号：US5612250A
公开(公告)日：1997-03-18
申请号：US481061
申请日：1995-06-07
申请人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi , Atsunori Suzuki
发明人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi , Atsunori Suzuki
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336
CPC分类号： H01L29/78621 , H01L21/2022 , H01L29/66757 , G02F1/13454
摘要： A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a relatively low temperature and then improving the crystallinity by irradiating the film with a laser light. The concentration of the catalyst in the crystallized silicon film can be controlled by controlling the concentration of the catalyst in the solution.
摘要翻译：制造具有结晶硅层作为有源层的薄膜晶体管的方法包括以下步骤：设置含有促进与非晶硅膜接触的硅结晶的催化剂的溶液，使非晶硅在相对低的温度下结晶然后用激光照射该膜来提高结晶度。可以通过控制溶液中催化剂的浓度来控制结晶硅膜中催化剂的浓度。

93. 发明授权

US5605846A Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5605846A
公开(公告)日：1997-02-25
申请号：US391580
申请日：1995-02-21
申请人： Hisahi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
发明人： Hisahi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： H01L21/2022 , H01L27/1214 , H01L29/66757 , Y10S148/016
摘要： A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.
摘要翻译：通过使用具有优异特性的结晶硅膜来制造半导体器件，特别是薄膜晶体管的工艺。该方法包括与其接触形成氮化硅膜和非晶硅膜，通过加热非晶硅膜引入能够促进非晶硅膜结晶的催化剂元件，从而使非晶硅膜的至少一部分结晶，并通过用与其相当的激光束或强光照射硅膜来加速结晶。

94. 发明授权

US5583369A Semiconductor device and method for forming the same 失效
公开(公告)号：US5583369A
公开(公告)日：1996-12-10
申请号：US614849
申请日：1996-03-12
申请人： Shunpei Yamazaki , Hongyong Zhang , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hongyong Zhang , Yasuhiko Takemura
IPC分类号： G02F1/13 , G02F1/136 , G09F9/35 , H01L21/02 , H01L21/20 , H01L21/28 , H01L21/324 , H01L21/336 , H01L21/36 , H01L21/70 , H01L21/77 , H01L21/84 , H01L27/00 , H01L27/12 , H01L27/15 , H01L29/78 , H01L29/786 , H01L23/58
CPC分类号： H01L21/2026 , H01L27/1218 , H01L27/1222 , H01L27/1251 , H01L27/1274 , H01L27/1281 , H01L29/66757 , H01L29/78603 , H01L29/78636 , H01L29/42384 , H01L29/78675 , H01L2924/0002
摘要： Thin-film semiconductor devices such as TFTs (thin-film transistors) and methods of fabricating the same. TFTs are formed on an insulating substrate. First, a substantially amorphous semiconductor coating is formed on the substrate. A protective coating transparent to laser radiation is formed on the semiconductor coating. The laminate is irradiated with laser radiation to improve the crystallinity of the semiconductor coating. Then, the protective coating is removed to expose the surface of the semiconductor coating. A coating for forming a gate-insulating film is formed. Subsequently, gate electrodes are formed. Another method relates to fabrication of semiconductor devices such as TFTs on an insulating substrate. After forming a first coating consisting mainly of aluminum nitride, a second coating consisting principally of silicon oxide is formed. Semiconductor devices such as TFTs or semiconductor circuits are built on the second coating serving as a base layer.

95. 发明授权

US5580800A Method of patterning aluminum containing group IIIb Element 失效
标题翻译：构成含IIIb族元素的铝的方法
公开(公告)号：US5580800A
公开(公告)日：1996-12-03
申请号：US213060
申请日：1994-03-15
申请人： Hongyong Zhang , Yasuhiko Takemura , Hideki Uochi , Itaru Koyama , Minoru Miyazaki , Akane Murakami , Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
发明人： Hongyong Zhang , Yasuhiko Takemura , Hideki Uochi , Itaru Koyama , Minoru Miyazaki , Akane Murakami , Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
IPC分类号： H01L21/02 , H01L21/28 , H01L21/3213 , H01L21/336 , H01L29/49 , H01L21/306
CPC分类号： H01L21/02071 , H01L21/28079 , H01L21/32134 , H01L29/4908 , H01L29/66757 , Y10S148/051
摘要： A thin film transistor according to this invention has a gate electrode comprising a lower layer of aluminum of a high purity of over 99.5% and an upper layer of aluminum containing over 0.5% silicon. Alternatively, it has a gate electrode made by adding a IIIa group element to a IIIb group element. Residues produced by the etching of the silicon-containing aluminum gate electrode are etched with a mixture solution of hydrofluoric acid, nitric acid and acetic acid. After contact holes have been formed in an interlayer insulating film, laser annealing is carried out, and metal electrodes are formed in the contact holes thereafter.
摘要翻译：根据本发明的薄膜晶体管具有包括高纯度超过99.5％的低铝层的下电极和含有超过0.5％硅的上层铝的栅电极。或者，其具有通过将IIIa族元素添加到IIIb族元素而制成的栅电极。通过蚀刻含硅铝栅电极产生的残留物用氢氟酸，硝酸和乙酸的混合溶液进行蚀刻。在层间绝缘膜中形成接触孔之后，进行激光退火，此后在接触孔中形成金属电极。

96. 发明授权

US5561081A Method of forming a semiconductor device by activating regions with a laser light 失效
标题翻译：用激光激活区域形成半导体器件的方法
公开(公告)号：US5561081A
公开(公告)日：1996-10-01
申请号：US190846
申请日：1994-02-03
申请人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
发明人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
IPC分类号： H01L21/265 , B23K26/073 , H01L21/268 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/306
CPC分类号： H01L29/66757 , B23K26/0738 , Y10S117/904
摘要： An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.
摘要翻译：描述了在玻璃基板上形成半导体器件的改进方法。该方法包括在玻璃基板上形成半导体膜，通过加热器将半导体膜加热到预定温度，在通过加热步骤将半导体膜加热到预定温度之后将半导体膜暴露于脉冲激光。由于预热步骤而导致的急剧的温度变化导致的热冲击减轻。脉冲激光的宽度大于垂直于长度的横截面时的高度。

97. 发明授权

US5533040A Laser processing method 失效
公开(公告)号：US5533040A
公开(公告)日：1996-07-02
申请号：US138066
申请日：1993-10-20
申请人： Hongyong Zhang
发明人： Hongyong Zhang
IPC分类号： B23K26/06 , H01L21/20 , H01L21/265 , H01L21/268 , H01S5/20 , H01S3/10
CPC分类号： H01L21/3105 , B23K26/06 , B23K26/064 , B23K26/0643 , B23K26/0648 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01S3/005 , H01S3/10038 , H01S3/104 , H01S3/2256 , H01S3/2316 , H01S3/2383
摘要： Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize the processing. To achieve a pulse width exceeding 30 nsec, plural lasers are connected in series or in parallel and excited successively.

98. 发明授权

US5481121A Semiconductor device having improved crystal orientation 失效
标题翻译：具有改善的晶体取向的半导体器件
公开(公告)号：US5481121A
公开(公告)日：1996-01-02
申请号：US248682
申请日：1994-05-25
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L23/544 , H01L27/01 , H01L29/167
CPC分类号： H01L21/2022 , H01L21/2026 , H01L27/1214 , H01L27/1229 , H01L29/78675 , G02F1/13454
摘要： Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film crystal-grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the crystalline silicon film crystal-grown in the direction vertical to the flow of carriers can be obtained.
摘要翻译：将镍引入到非晶硅膜上的外围电路部分和像素部分以使它们结晶。在形成栅电极等之后，通过掺杂杂质形成源极，漏极和沟道，并且照射激光以改善结晶。之后，形成电极/电线。由此，在周边电路部中的薄膜晶体管（TFT）由沿着与载流子流动平行的方向晶体生长的晶体硅膜构成的有源矩阵型液晶显示器，其像素部的TFT由可以获得在垂直于载流子的方向上晶体生长的晶体硅膜。

99. 发明授权

US5313075A Thin-film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：US5313075A
公开(公告)日：1994-05-17
申请号：US44883
申请日：1993-04-09
申请人： Hongyong Zhang , Shunpei Yamazaki
发明人： Hongyong Zhang , Shunpei Yamazaki
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L29/49 , H01L27/01
CPC分类号： H01L27/1214 , H01L29/4908 , H01L29/66757 , Y10S148/118
摘要： A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.
摘要翻译：公开了一种栅极绝缘薄膜晶体管。一个改进是薄膜晶体管通过其间的阻挡层形成在衬底上，使得可以防止晶体管被存在于衬底中的诸如碱离子的杂质污染。此外，为阻止层和晶体管的栅极绝缘体中的任一个或两者添加卤素，以便可以中和诸如碱性离子，悬挂键等的杂质，因此提高了器件的可靠性。

100. 发明授权

US5210050A Method for manufacturing a semiconductor device comprising a semiconductor film 失效
标题翻译：包括半导体膜的半导体器件的制造方法
公开(公告)号：US5210050A
公开(公告)日：1993-05-11
申请号：US774852
申请日：1991-10-11
申请人： Shunpei Yamazaki , Hongyong Zhang
发明人： Shunpei Yamazaki , Hongyong Zhang
IPC分类号： H01L29/786
CPC分类号： H01L29/78675
摘要： A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diameter of 30 .ANG. to 4 .mu.m as viewed from the upper surface of said semiconductor film and contains oxygen impurity and concentration of said oxygen impurity is not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 at an inside position of said semiconductor film. Also is disclosed a method for fabricating semiconductor devices mentioned hereinbefore, which comprises depositing an amorphous semiconductor film containing oxygen impurity at a concentration not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 by sputtering from a semiconductor target containing oxygen impurity at a concentration not higher than 5.times.10.sup.18 atoms.multidot.cm.sup.-3 in an atmosphere comprising hydrogen at not less than 10% in terms of partial pressure; and crystallizing said amorphous semiconductor film at a temperature of from 450.degree. C. to 700.degree. C.
摘要翻译：公开了至少具有微晶结构的半导体膜的高质量的半导体器件，其中所述半导体膜在其中具有晶格畸变，并且从所述半导体膜的上表面观察，平均直径为30至4μm的晶粒并且在所述半导体膜的内部位置含有氧杂质且所述氧杂质的浓度不高于7×10 19 atoms×cm -3。还公开了一种用于制造上述半导体器件的方法，其包括通过溅射从含有氧浓度不高于5×1018原子×cm -3的氧杂质的半导体靶沉积含有浓度不高于7×1019原子×cm -3的氧杂质的非晶半导体膜， 3在包含不低于分压10％的氢的气氛中; 并在450℃至700℃的温度下使所述非晶半导体膜结晶。

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