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    • 2. 发明申请
    • WIRING AND ORGANIC TRANSISTOR, AND MANUFACTURING METHOD THEREOF
    • 有线和有线晶体管及其制造方法
    • US20070275500A1
    • 2007-11-29
    • US11687767
    • 2007-03-19
    • Yuji SuwaTomihiro HashizumeMasaaki Fujimori
    • Yuji SuwaTomihiro HashizumeMasaaki Fujimori
    • H01L51/00H01B7/22
    • H01L51/0021H01B1/02H01B1/16H01L51/0545H01L51/105H05K1/097H05K3/105
    • If an organic transistor is formed by printing with a low cost, there are problems in that an inexpensive electrode material has a high contact resistance with a semiconductor, and an expensive electrode material has a low contact resistance. To solve the problems, the present invention provides an organic transistor and a method of forming the same, the organic transistor being formed with a low material cost and low manufacturing cost and providing a low contact resistance with a semiconductor and high performance.The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, the present invention uses a property of the second metal, in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.
    • 如果通过低成本的印刷形成有机晶体管,则存在廉价的电极材料与半导体具有高接触电阻并且昂贵的电极材料具有低接触电阻的问题。 为了解决这些问题,本发明提供了一种有机晶体管及其形成方法,有机晶体管以低成本和低制造成本形成,并且具有半导体的低接触电阻和高性能。 有机晶体管具有主体由廉价的第一金属形成并且其表面由昂贵但提供高性能的第二金属形成的电极。 为了以低成本获得该结构的稳定性,本发明使用第二金属的特性,其中第二金属在第一金属和第二金属的合金中容易地偏析在第一金属的表面上。
    • 7. 发明申请
    • Thin-film transistor device and a method for manufacturing the same
    • 薄膜晶体管器件及其制造方法
    • US20090001361A1
    • 2009-01-01
    • US12155801
    • 2008-06-10
    • Takeo ShibaTomihiro HashizumeYuji SuwaTadashi Arai
    • Takeo ShibaTomihiro HashizumeYuji SuwaTadashi Arai
    • H01L51/00H01L51/40
    • H01L51/0012H01L27/283H01L51/0004H01L51/0022H01L51/0545H01L51/0558H01L51/105
    • The present invention provides a method of manufacturing a thin-film transistor device. This method enables improvement in performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device and also enables reduction of power consumption and reduction of manufacturing cost of the circuit. Further in the method, the number of manufacturing steps is decreased so that mass production and growth in size of thin film transistor devices are facilitated through a printing technique. In this method, electrodes forming n-type and p-type TFT and an organic semiconductor are made of the same material in both types of TFT by the solution-process and/or printable process method. A first polarizable thin-film 7 is formed on an interface between a gate insulator and a semiconductor, and also a second polarizable thin film 8 provided on an interface between source and drain electrodes 5 and a semiconductor film 9. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films in the area.
    • 本发明提供一种制造薄膜晶体管器件的方法。 该方法能够提高并入薄型和轻型图像显示装置或柔性电子装置中的互补TFT电路的性能,并且还能够降低功耗并降低电路的制造成本。 此外,在该方法中,制造步骤的数量减少,从而通过印刷技术促进了薄膜晶体管器件的大规模生产和尺寸增长。 在这种方法中,通过溶液处理和/或可印刷的方法,形成n型和p型TFT的电极和有机半导体由两种类型的TFT由相同的材料制成。 第一可极化薄膜7形成在栅极绝缘体和半导体之间的界面上,以及设置在源电极和漏电极5与半导体膜9之间的界面上的第二可极化薄膜8.互补薄膜晶体管 通过将n型TFT区域或p型TFT区域选择性地暴露于光以从该区域中的第一和第二可极化薄膜去除偏振功能来制造器件。
    • 9. 发明授权
    • Organic transistor using self-assembled monolayer
    • 有机晶体管采用自组装单层
    • US07622734B2
    • 2009-11-24
    • US11865769
    • 2007-10-02
    • Yuji SuwaTomihiro HashizumeMasahiko AndoTakeo Shiba
    • Yuji SuwaTomihiro HashizumeMasahiko AndoTakeo Shiba
    • H01L51/00
    • H01L51/105H01L51/0545
    • Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.
    • 公开了一种在有机半导体的p型操作时廉价地降低电极和有机半导体之间的接触电阻的方法; 以及作为n型半导体廉价地操作有可能用作p型半导体的有机半导体的方法。 此外,还公开了可以廉价制造的p型FET,n沟道FET和C-TFT。 具体地说,在一个衬底上廉价地制备p型区域和n型区域,通过在p沟道FET区域和n沟道FET区域中配置可能作为p型半导体的有机半导体, 一个C-TFT; 并且在n沟道FET区域中的电极和有机半导体之间布置自组装单层,该自组装单层能够使有机半导体作为n型半导体工作。
    • 10. 发明授权
    • Thin-film transistor device and a method for manufacturing the same
    • 薄膜晶体管器件及其制造方法
    • US08008654B2
    • 2011-08-30
    • US12155801
    • 2008-06-10
    • Takeo ShibaTomihiro HashizumeYuji SuwaTadashi Arai
    • Takeo ShibaTomihiro HashizumeYuji SuwaTadashi Arai
    • H01L51/00
    • H01L51/0012H01L27/283H01L51/0004H01L51/0022H01L51/0545H01L51/0558H01L51/105
    • A method of manufacturing a thin-film transistor device improves performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device, and reduces power consumption manufacturing cost. Electrodes forming n-type and p-type TFTs and an organic semiconductor are made of the same material in both types of TFT by a solution-process and/or printable process method. A first polarizable thin-film is formed on an interface between a gate insulator and a semiconductor, and a second polarizable thin film provided on an interface between source and drain electrodes and the semiconductor film. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films.
    • 薄膜晶体管器件的制造方法提高了结合在薄型和轻型图像显示器件或柔性电子器件中的互补TFT电路的性能,并降低了功耗制造成本。 形成n型和p型TFT的电极和有机半导体通过溶液处理和/或可印刷的方法在两种类型的TFT中由相同的材料制成。 第一可极化薄膜形成在栅极绝缘体和半导体之间的界面上,第二可极化薄膜设置在源电极和漏电极与半导体膜之间的界面上。 通过将n型TFT区域或p型TFT区域选择性地暴露于光以从第一和第二可极化薄膜去除偏振功能来制造互补薄膜晶体管器件。