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1. 发明授权

US5434821A Dynamic semiconductor memory device having sense amplifier with compensated offset voltage 失效
标题翻译：具有补偿失调电压的读出放大器的动态半导体存储器件
公开(公告)号：US5434821A
公开(公告)日：1995-07-18
申请号：US986908
申请日：1992-12-08
申请人： Yohji Watanabe , Nobuo Nakamura
发明人： Yohji Watanabe , Nobuo Nakamura
IPC分类号： G11C11/401 , G11C7/12 , G11C11/409 , G11C11/4091 , G11C7/00
CPC分类号： G11C7/12 , G11C11/4091
摘要： A dynamic random access memory, which comprises a substrate, a dynamic memory cell located on the substrate, a pair of bit lines to read out data from the cell and/or write data to the cell, a plurality of word lines, connected to the bit lines, to select a desired memory cell, a differential sense amplifier having an output line, the differential sense amplifier amplifying data from the pair of bit lines and transferring the amplified data to the output lines; means for precharging a first bit line of the pair of bit lines to a reference voltage and a second bit line of the pair of bit lines to a second voltage exceeding the reference voltage by the amount of an input offset voltage of the sense amplifier.
摘要翻译：动态随机存取存储器，其包括衬底，位于衬底上的动态存储单元，用于从单元读出数据和/或向单元写入数据的一对位线，连接到单元的多个字线选择期望的存储单元，具有输出线的差分读出放大器，差分读出放大器放大来自该对位线的数据并将放大的数据传送到输出线; 用于将所述一对位线的第一位线预先充电到所述一对位线的参考电压和所述第二位线，以将超过所述参考电压的第二电压乘以所述读出放大器的输入失调电压的量。

2. 发明授权

US09322111B2 Bismuth-substituted rare-earth iron garnet crystal film and optical isolator 有权
标题翻译：铋取代稀土铁石榴石晶体膜和光隔离器
公开(公告)号：US09322111B2
公开(公告)日：2016-04-26
申请号：US13884371
申请日：2011-11-10
申请人： Shuuji Oosumi , Yasutaka Nomi , Nobuo Nakamura , Hiroshi Hatanaka , Tomio Kajigaya
发明人： Shuuji Oosumi , Yasutaka Nomi , Nobuo Nakamura , Hiroshi Hatanaka , Tomio Kajigaya
IPC分类号： C30B29/34 , C30B19/12 , C30B29/28 , G02B1/02 , H01F10/24 , G02F1/09
CPC分类号： C30B29/34 , C30B19/12 , C30B29/28 , G02B1/02 , G02F1/093 , H01F10/24
摘要： A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0
摘要翻译：铋取代的稀土铁石榴石晶体膜（RIG）具有小于0.60dB的插入损耗并且可以以高产率生产，以及通过液相外延生长的光隔离器由Gd 3（ScGa）5 O 12化学式表示的非磁性石榴石基材，其中铋取代的稀土类铁石榴石晶体膜由化学式La3-x-yGdxBiyFe5O12（条件是0

3. 发明申请

US20130224520A1 BISMUTH-SUBSTITUTED RARE-EARTH IRON GARNET CRYSTAL FILM AND OPTICAL ISOLATOR 有权
标题翻译： BISMUTH取代的稀土红宝石晶体膜和光学隔离器
公开(公告)号：US20130224520A1
公开(公告)日：2013-08-29
申请号：US13884363
申请日：2011-11-10
申请人： Shuuji Oosumi , Yasutaka Nomi , Nobuo Nakamura , Hiroshi Hatanaka , Tomio Kajigaya
发明人： Shuuji Oosumi , Yasutaka Nomi , Nobuo Nakamura , Hiroshi Hatanaka , Tomio Kajigaya
IPC分类号： C30B29/34 , G02B1/02
CPC分类号： C30B29/34 , C30B19/12 , C30B29/28 , G02B1/02 , G02F1/0036 , G02F1/093
摘要： [Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator.[Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89×1.43 and 0.85≦y≦1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 μm. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing.
摘要翻译：本发明提供一种铋取代的稀土铁石榴石晶体膜（RIG），其具有小于0.6dB的插入损耗并且可以以高产率生产，以及光隔离器。 [解决方案]提供一种铋取代的稀土铁石榴石晶体膜，其通过液相外延在由化学式Gd 3（ScGa）5 O 12表示的非磁性石榴石基材上生长，其中RIG由 Nd3-x-yGdxBiyFe5O12的化学式，x和y满足0.89×1.43和0.85 @ y @ 1.19。与传统的RIG相反，本发明的Nd3-x-yGdxBiyFe5O12的化学式表示的RIG具有小于0.6dB的插入损耗，并且可以减少由于波长吸收光而产生的热量约1 mum。因此，RIG具有如此显着的效果，RIG可用作用于高功率激光装置中用于光隔离器的法拉第旋转器用于处理。

4. 发明申请

US20130224500A1 BISMUTH-SUBSTITUTED RARE-EARTH IRON GARNET CRYSTAL FILM AND OPTICAL ISOLATOR 有权
标题翻译： BISMUTH取代的稀土红宝石晶体膜和光学隔离器
公开(公告)号：US20130224500A1
公开(公告)日：2013-08-29
申请号：US13884371
申请日：2011-11-10
申请人： Shuuji Oosumi , Yasutaka Nomi , Nobuo Nakamura , Hiroshi Hatanaka , Tomio Kajigaya
发明人： Shuuji Oosumi , Yasutaka Nomi , Nobuo Nakamura , Hiroshi Hatanaka , Tomio Kajigaya
IPC分类号： C30B29/34
CPC分类号： C30B29/34 , C30B19/12 , C30B29/28 , G02B1/02 , G02F1/093 , H01F10/24
摘要： [Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator.[Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0
摘要翻译：本发明提供一种铋取代的稀土铁石榴石晶体膜（RIG），其具有小于0.60dB的插入损耗并且可以以高产率产生，以及光隔离器。 [解决方案]提供一种铋取代的稀土铁石榴石晶体膜，其通过液相外延在由化学式Gd 3（ScGa）5 O 12表示的非磁性石榴石基材上生长，其中铋取代的稀土 - 土石榴石晶体膜由La3-x-yGdxBiyFe5O12的化学式（条件是0

5. 发明申请

US20120286388A1 SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取装置和制造固态图像拾取装置的方法
公开(公告)号：US20120286388A1
公开(公告)日：2012-11-15
申请号：US13545673
申请日：2012-07-10
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

6. 发明授权

US07687831B2 Solid state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07687831B2
公开(公告)日：2010-03-30
申请号：US10382058
申请日：2003-03-05
申请人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
发明人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
IPC分类号： H01L27/148 , H01L31/113 , H01L31/00 , H01L31/06
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.
摘要翻译：以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽从而可以实现光电二极管PD的灵敏度的提高。

7. 发明授权

US07638355B2 Solid state image pickup device and method of producing solid state image pickup device 有权
公开(公告)号：US07638355B2
公开(公告)日：2009-12-29
申请号：US11973282
申请日：2007-10-05
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

8. 发明申请

US20090076191A1 BIODEGRADABLE RESIN COMPOSITION AND MOLDED ARTICLE PRODUCED FROM THE SAME 有权
标题翻译：可生物降解的树脂组合物和由其生产的成型品
公开(公告)号：US20090076191A1
公开(公告)日：2009-03-19
申请号：US11914298
申请日：2006-05-12
申请人： Taizo Aoyama , Nobuo Nakamura , Yoshihiko Hashimoto , Noriyuki Suzuki
发明人： Taizo Aoyama , Nobuo Nakamura , Yoshihiko Hashimoto , Noriyuki Suzuki
IPC分类号： C08L51/00
CPC分类号： C08L51/003 , C08F265/04 , C08F279/02 , C08F283/12 , C08K5/053 , C08K5/20 , C08K5/21 , C08L33/08 , C08L33/14 , C08L51/00 , C08L51/04 , C08L67/04 , C08L2666/02 , C08L2666/04
摘要： Disclosed is a resin composition excellent in impact resistance, tensile properties and processability such as draw down property, which is produced by using a plant-derived biodegradable polymer produced by actively fixing carbon dioxide present in the earth. A resin composition comprising (A) a specific biodegradable (3-hydroxyalkanoate) copolymer, (B) a graft copolymer and (C) an acrylic processing modifier, the graft copolymer (B) and the acrylic processing modifier (C) being contained in the composition in amounts of 0.1 to 100 parts by weight and 0.1 to 30 parts by weight, respectively, based on 100 parts by weight of the biodegradable (3-hydroxyalkanoate) copolymer (A).
摘要翻译：公开了通过使用通过主动固定存在于地球中的二氧化碳而制造的植物来源的生物可降解聚合物制造的抗冲击性，拉伸性能和加工性，例如拉伸性能优异的树脂组合物。一种树脂组合物，其包含（A）特定的可生物降解的（3-羟基链烷酸酯）共聚物，（B）接枝共聚物和（C）丙烯酸类加工改性剂，所述接枝共聚物（B）和丙烯酸类加工改性剂（C）基于100重量份的生物可降解（3-羟基链烷酸酯）共聚物（A），分别为0.1至100重量份和0.1至30重量份的组合物。

9. 发明授权

US07279712B2 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US07279712B2
公开(公告)日：2007-10-09
申请号：US10954788
申请日：2004-09-30
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L29/76
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

10. 发明申请

US20050224841A1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20050224841A1
公开(公告)日：2005-10-13
申请号：US10509977
申请日：2003-04-04
申请人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
发明人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
IPC分类号： H04N5/335 , H04N5/355 , H04N5/374 , H01L27/148
CPC分类号： H04N5/3597 , H04N5/3698 , H04N5/3741
摘要： A solid-state imaging device for enlarging an operating margin of a pixel portion and achieving complete transfer of a signal charge by using a plurality of power supply voltages, wherein a plurality of power supplies having different power supply voltage values are supplied to portions of a semiconductor chip 1. For example, as a first power supply system, a first digital power supply voltage (DVDD1) is supplied from a power supply terminal 45, a first digital ground voltage (DVSS1) is supplied from a power supply terminal 46, a second digital power supply voltage (DVDD2) is supplied from a power supply terminal 47, a second digital ground voltage (DVSS2) is supplied from a power supply terminal 48, a third digital power supply (DVDD3) is supplied from a power supply terminal 49, and a third digital ground voltage (DVSS3) is supplied from a power supply terminal 50, and as a second power supply system, a first analog power supply voltage (AVDD1) is supplied from a power supply terminal 40, a first analog ground voltage (AVSS1) is supplied from a power supply terminal 41, a second analog power supply voltage (AVDD2) is supplied from a power supply terminal 42, and a second analog ground voltage (AVSS2) is supplied from a power supply terminal 43.
摘要翻译：一种固态成像装置，用于放大像素部分的工作裕度并通过使用多个电源电压实现信号电荷的完全传送，其中具有不同电源电压值的多个电源被提供给半导体芯片1.例如，作为第一电源系统，从电源端子45供给第一数字电源电压（DVDD1），从电源端子46供给第一数字接地电压（DVSS1），从电源端子47供给第二数字电源电压（DVDD2），从电源端子48供给第二数字接地电压（DVSS2），从第三数字电源电压（DVDD3）供给第三数字电源电压从电源端子50供给电源端子49和第三数字接地电压（DVSS3），作为第二电源系统，从第一电源端子供给第一模拟电源电压（AVDD 1）电源端子40从电源端子41供给第一模拟接地电压（AVSS1），从电源端子42供给第二模拟电源电压（AVDD2），将第二模拟接地电压（AVSS 2）从电源端子43供给。

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