会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Programmable level shifter
    • 可编程电平转换器
    • US07605609B1
    • 2009-10-20
    • US11957598
    • 2007-12-17
    • William B. AndrewsMou C. LinJohn Schadt
    • William B. AndrewsMou C. LinJohn Schadt
    • H03K19/0175
    • H03K3/356165
    • In one embodiment of the invention, a programmable level shifter can be selectively configured to operate in either a high-speed mode or a low-power mode. In both modes, the level shifter converts an input signal in one power supply domain into an output signal in another power supply domain. In the high-speed mode, p-type devices are configured as a current-mirror amplifier that provides the level shifter with relatively fast switching speed. In the low-power mode, the same p-type devices are configured as a cross-coupled latch that provides the level shifter with relatively low power consumption. Selectively enabled n-type devices provide the low-power mode with larger effective n-type devices to flip the cross-coupled latch formed by the p-type devices in the low-power mode.
    • 在本发明的一个实施例中,可编程电平转换器可被选择性地配置为以高速模式或低功率模式工作。 在两种模式中,电平移位器将一个电源域中的输入信号转换为另一个电源域中的输出信号。 在高速模式中,p型器件被配置为电流镜放大器,为电平转换器提供相对较快的开关速度。 在低功耗模式中,相同的p型器件被配置为交叉耦合的锁存器,其为电平移位器提供相对较低的功耗。 选择性使能的n型器件提供具有较大有效n型器件的低功耗模式,以在低功耗模式下翻转由p型器件形成的交叉耦合锁存器。
    • 2. 发明授权
    • Integrated circuit having independent voltage and process/temperature control
    • 具有独立电压和工艺/温度控制的集成电路
    • US07586325B1
    • 2009-09-08
    • US11949130
    • 2007-12-03
    • William B. AndrewsMou C. LinJohn Schadt
    • William B. AndrewsMou C. LinJohn Schadt
    • H03K17/16H03K19/003
    • H03K19/00369H03K17/14H03K19/17748H03K19/1778
    • In one embodiment, an integrated circuit has configurable application circuitry that operates at any one of multiple available power supply voltages. PT-control circuitry, operating at a PT reference voltage, generates a PT-control signal indicative of variations in process and temperature. Application-control circuitry controls the configuration of the application circuitry based on the selected power supply voltage for the application circuitry and the PT-control signal, where the selected power supply voltage is independent of the PT reference voltage. In one implementation, the application circuitry is an output driver having source and sink driver blocks, where driver-control circuitry controls the configuration of the source driver block based on the selected output-driver power supply voltage, a source PT-control signal, and a selected drive strength, while controlling the configuration of the sink driver block based on the selected output-driver power supply voltage, a sink PT-control signal, and a selected drive strength.
    • 在一个实施例中,集成电路具有可操作的多个可用电源电压中的任何一个的可配置应用电路。 以PT参考电压工作的PT控制电路产生指示过程和温度变化的PT控制信号。 应用控制电路基于用于应用电路和PT控制信号的所选择的电源电压控制应用电路的配置,其中所选择的电源电压独立于PT参考电压。 在一个实现中,应用电路是具有源和接收器驱动器块的输出驱动器,其中驱动器控制电路基于所选择的输出驱动器电源电压来控制源极驱动器模块的配置,源PT控制信号和 选择的驱动强度,同时基于所选择的输出驱动器电源电压,信宿PT控制信号和选择的驱动强度来控制接收器驱动器块的配置。
    • 3. 发明授权
    • Programmable termination for single-ended and differential schemes
    • 单端和差分方案的可编程终端
    • US07262630B1
    • 2007-08-28
    • US11194356
    • 2005-08-01
    • William B. AndrewsBarry K. BrittonJohn SchadtMou C. Lin
    • William B. AndrewsBarry K. BrittonJohn SchadtMou C. Lin
    • H03K19/003
    • H03K19/17744H04L25/0278
    • In one embodiment of the invention, a programmable termination structure has first and second termination circuits for corresponding pads and a programmable connection therebetween. The first termination circuit supports first and second sets of termination schemes. A shared resistor is part of at least one termination scheme in each set. The first termination circuit supports a termination scheme between the first pad and a user-defined node connected to an on-chip capacitor such that first pad is connected via the termination scheme to the on-chip capacitor. Control circuitry automatically turns on and off a termination scheme for bidirectional signaling supported by the first termination circuit, wherein (1) the control circuitry turns off the termination scheme if an output buffer is configured to present outgoing signals at the first pad and (2) the control circuitry turns on the termination scheme if the output buffer is disabled in order to terminate incoming signals received at the first pad.
    • 在本发明的一个实施例中,可编程终端结构具有用于相应焊盘的第一和第二终端电路以及它们之间的可编程连接。 第一终端电路支持第一和第二组终端方案。 共享电阻是每组中至少一个终端方案的一部分。 第一终端电路支持第一焊盘和连接到片上电容器的用户定义节点之间的终止方案,使得第一焊盘通过端接方案连接到片上电容器。 控制电路自动打开和关闭由第一终端电路支持的用于双向信令的终止方案,其中(1)如果输出缓冲器被配置为在第一焊盘处呈现输出信号,则控制电路关闭终止方案,(2) 如果禁止输出缓冲器以便终止在第一焊盘处接收到的输入信号,则控制电路接通终止方案。
    • 6. 发明授权
    • Temperature-independent, linear on-chip termination resistance
    • 温度独立,线性片上终端电阻
    • US07495467B2
    • 2009-02-24
    • US11300886
    • 2005-12-15
    • Mou C. LinWilliam B. AndrewsJohn A. Schadt
    • Mou C. LinWilliam B. AndrewsJohn A. Schadt
    • H03K17/16
    • H04L25/0298H01L28/20
    • In one embodiment of the invention, an integrated circuit, such as an FPGA, has one or more programmable termination schemes, each having a plurality of resistive termination legs connected in parallel, and a calibration circuit designed to control each termination scheme for process, voltage, and temperature (PVT) variations. The sense element in the calibration circuit and each resistive leg in each termination scheme has a transistor-based transmission gate connected in series with a non-silicided poly (NSP) resistor. The negative temperature coefficient of resistivity of each NSP resistor offsets the positive temperature coefficient of resistivity of the corresponding transmission gate to provide a temperature-independent sense element and temperature-independent termination legs. The temperature-independence and constant IV characteristic of the sense element and termination legs enable a single calibration circuit to simultaneously control multiple termination schemes operating at different termination voltage levels.
    • 在本发明的一个实施例中,诸如FPGA的集成电路具有一个或多个可编程端接方案,每个可编程端接方案具有并联连接的多个电阻端接支路,以及被设计成控制每个端接方案用于处理电压的校准电路 ,和温度(PVT)变化。 校准电路中的感测元件和每个端接方案中的每个电阻支路具有与非硅化聚(NSP)电阻器串联连接的基于晶体管的传输栅极。 每个NSP电阻器的负温度系数抵消相应传输门的电阻率的正温度系数,以提供与温度无关的感测元件和温度独立的端接脚。 感测元件和终端支路的温度独立性和恒定IV特性使得单个校准电路能够同时控制在不同终端电压电平下工作的多个终端方案。
    • 7. 发明授权
    • Temperature-independent, linear on-chip termination resistance
    • 温度独立,线性片上终端电阻
    • US07714608B1
    • 2010-05-11
    • US12370039
    • 2009-02-12
    • Mou C. LinWilliam B. AndrewsJohn A. Schadt
    • Mou C. LinWilliam B. AndrewsJohn A. Schadt
    • H03K17/16
    • H04L25/0298H01L28/20
    • In one embodiment, an integrated circuit, such as an FPGA, has one or more programmable termination schemes, each having a plurality of resistive termination legs connected in parallel, and a calibration circuit designed to control each termination scheme for process, voltage, and temperature (PVT) variations. A sense element in the calibration circuit and each resistive leg in each termination scheme has a transistor-based transmission gate connected in series with a non-silicided poly (NSP) resistor. The negative temperature coefficient of resistivity of each NSP resistor offsets the positive temperature coefficient of resistivity of the corresponding transmission gate to provide a temperature-independent sense element and temperature-independent termination legs. The temperature-independence and constant IV characteristic of the sense element and termination legs enable a single calibration circuit to simultaneously control multiple termination schemes operating at different termination voltage levels.
    • 在一个实施例中,诸如FPGA的集成电路具有一个或多个可编程端接方案,每个可编程端接方案具有并联连接的多个电阻端接支路,以及设计成控制处理,电压和温度的每个端接方案的校准电路 (PVT)变化。 校准电路中的感测元件和每个端接方案中的每个电阻支路具有与非硅化聚(NSP)电阻器串联连接的基于晶体管的传输栅极。 每个NSP电阻器的负温度系数抵消相应传输门的电阻率的正温度系数,以提供与温度无关的感测元件和温度独立的端接脚。 感测元件和终端支路的温度独立性和恒定IV特性使得单个校准电路能够同时控制在不同终端电压电平下工作的多个终端方案。
    • 8. 发明授权
    • Output buffer with digital slew control
    • 输出缓冲器,带数字转换控制
    • US07443192B1
    • 2008-10-28
    • US11643288
    • 2006-12-21
    • William B. AndrewsMou C. LinJohn A. Schadt
    • William B. AndrewsMou C. LinJohn A. Schadt
    • H03K19/003
    • H03K19/00369
    • An improved output buffer having a digital output slew control and compensation for manufacturing process variations. Output slewing is accomplished by sequencing digital drive signals to paralleled output transistors. In one embodiment, a pre-driver sequences the drive signals by using the propagation delays of serially coupled digital logic gates to reduce power supply droop and/or ground bounce. The output transistors are turned off substantially simultaneously to avoid undesirable power supply DC current flow when the output buffer changes state. Programmably configuring the number of paralleled transistors that may be turned on at any given time allows a user to compensate for manufacturing process variations and determine the output impedance/drive capacity of the buffer.
    • 一种改进的输出缓冲器,具有数字输出摆幅控制和补偿制造工艺变化。 输出回转是通过将数字驱动信号排列成并联的输出晶体管来实现的。 在一个实施例中,预驱动器通过使用串行数字逻辑门的传播延迟来排序驱动信号,以减少电源下降和/或地面反弹。 输出晶体管基本上同时截止,以避免在输出缓冲器改变状态时不期望的电源DC电流流动。 可编程地配置可以在任何给定时间导通的并联晶体管的数量允许用户补偿制造工艺变化并确定缓冲器的输出阻抗/驱动能力。
    • 10. 发明授权
    • Dynamic over-voltage protection scheme for integrated-circuit devices
    • 集成电路器件的动态过压保护方案
    • US07230810B1
    • 2007-06-12
    • US11007954
    • 2004-12-09
    • William B. AndrewsMou C. LinLarry R. Fenstermaker
    • William B. AndrewsMou C. LinLarry R. Fenstermaker
    • H02H9/04
    • H01L27/0285
    • An integrated circuit having a transistor device and over-voltage protection circuitry. The transistor device is implemented in a technology having a specified operating-voltage range, the transistor device having gate, drain, source, and tub nodes, and the specified operating-voltage range having a specified maximum voltage. The over-voltage protection circuitry is adapted to apply gate and tub voltages to the gate and tub nodes, respectively. If at least one channel voltage applied to at least one of the drain and source nodes exceeds the specified maximum voltage, then the over-voltage protection circuitry controls at least one of the gate voltage and the tub voltage to inhibit one or more adverse effects to the transistor device.
    • 具有晶体管器件和过电压保护电路的集成电路。 晶体管器件以具有指定工作电压范围的技术实现,该晶体管器件具有栅极,漏极,源极和源极节点以及具有指定最大电压的规定工作电压范围。 过电压保护电路分别适用于门和电池的电压。 如果施加到至少一个漏极和源极节点的至少一个沟道电压超过规定的最大电压,则过电压保护电路控制栅极电压和电池电压中的至少一个以抑制一个或多个不利影响 晶体管器件。