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    • 3. 发明授权
    • Process for producing functional vitreous layers
    • 生产功能性玻璃体层的方法
    • US5731091A
    • 1998-03-24
    • US635971
    • 1996-08-01
    • Helmut SchmidtMartin MennigThomas BurkhartClaudia Fink-StraubeGerhard JonschkerMike SchmittAnnette Bauer
    • Helmut SchmidtMartin MennigThomas BurkhartClaudia Fink-StraubeGerhard JonschkerMike SchmittAnnette Bauer
    • C03C14/00C03C17/00C03C17/30C04B41/50C04B41/86C23C18/12B05D5/06
    • C03C14/004C03C14/006C03C14/008C03C17/007C03C17/008C03C17/009C04B41/5022C04B41/86C03C2214/32C03C2217/485C03C2217/92
    • To produce functional vitrous, preferably colored or colloid-dyed layers, a composition produced by hydrolysis and polycondensation of (A) at least on hydrolyzable silane of general formula (I) SiX.sub.4 (I) wherein the radicals X are the same or different and represent hydrolyzable groups or hydroxy groups, or an oligomer derived therefrom, and (B) at least one organosilane of general formula (II) R.sup.1.sub.a R.sup.2.sub.b SiX.sub.(4-a-b) (II) wherein R.sup.1 is a non-hydrolyzable radical, R.sup.2 represents a radical carrying a functional group, X has the meaning given above, and a and b have the values 0, 1, 2 or 3, the sum (a+b) having the values 1, 2 or 3, or an oligomer derived therefrom with an (A):(B) substance ratio of 5-50:50-95, and optionally (C) one or more compounds of glass-forming elements, is mixed with at least one function carrier from the group of temperature-stable dyes or pigments, metallic or non-metallic oxides, coloring metallic ions, metallic or metallic compound colloids, and metal ions that react under reduction conditions to form metallic colloids; the composition mixed with the function carrier is applied onto a substrate and the coating is thermally condensed to form a vitreous layer.
    • PCT No.PCT / EP94 / 03423 Sec。 371日期:1996年8月1日 102(e)日期1996年8月1日PCT 1994年10月18日PCT PCT。 公开号WO95 / 13249 日期1995年5月18日为了生产功能性玻璃色,优选着色或胶体染色层,通过(A)至少在通式(I)SiX 4(I)的可水解硅烷上进行水解和缩聚制备的组合物,其中基团X相同 或者不同,表示可水解基团或羟基,或由其衍生的低聚物,和(B)至少一种通式(II)的有机硅烷R 1 a R 2 b SiX(4-ab)(II)其中R 1是不可水解的基团, 带有官能团的基团X具有上述含义,a和b具有值0,1,2或3,具有值1,2或3的和(a + b)或由其衍生的低聚物 (A):(B)的物质比例为5-50:50-95,和任选的(C)一种或多种玻璃形成元素化合物,与至少一种功能性载体从温度稳定的 染料或颜料,金属或非金属氧化物,着色金属离子,金属或金属化合物胶体和金属 在还原条件下反应形成金属胶体的离子; 将与功能性载体混合的组合物施加到基材上,并将涂层热凝聚以形成玻璃质层。
    • 7. 发明授权
    • Nanoimprint resist
    • 纳米抗蚀剂
    • US07431858B2
    • 2008-10-07
    • US10511402
    • 2003-04-09
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigPeter W OliveiraHelmut Schmidt
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigPeter W OliveiraHelmut Schmidt
    • B44C1/22C03C15/00C03C25/68C23F1/00
    • G03F7/0757B82Y10/00B82Y40/00G03F7/0002G03F7/0017G03F7/0047
    • The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.
    • 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。
    • 9. 发明申请
    • Nanoimprint resist
    • 纳米抗蚀剂
    • US20050224452A1
    • 2005-10-13
    • US10511402
    • 2003-04-09
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigHelmut Schmidt
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigHelmut Schmidt
    • G03F7/20B81C1/00G03F7/00G03F7/004G03F7/075H01L21/027H01L21/3065C23F1/00B05D5/00B44C1/22C03C15/00C03C25/68G03G15/00H01L21/311H01L29/06
    • G03F7/0757B82Y10/00B82Y40/00G03F7/0002G03F7/0017G03F7/0047
    • The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.
    • 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。