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1. 发明公开

EP2396823A4 SOLAR CELL ABSORBER LAYER FORMED FROM EQUILIBRIUM PRECURSOR(S) 审中-公开
标题翻译：从前体平衡（N）形太阳电池吸收层
公开(公告)号：EP2396823A4
公开(公告)日：2013-09-11
申请号：EP10741889
申请日：2010-02-16
申请人： WOODRUFF JACOB , VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
发明人： WOODRUFF JACOB , VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
IPC分类号： H01L31/032 , C23C14/06 , C23C14/58 , C23C18/08 , C23C28/02 , H01L21/36 , H01L31/18
CPC分类号： H01L31/0322 , C23C18/08 , C23C18/1204 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C28/021 , C23C28/023 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/36 , H01L21/02425 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/1864 , Y02E10/541 , Y02P70/521

2. 发明申请

WO2010094048A3 SOLAR CELL ABSORBER LAYER FORMED FROM EQUILIBRIUM PRECURSOR(S) 审中-公开
标题翻译：由平衡前体形成的太阳能电池吸收层（S）
公开(公告)号：WO2010094048A3
公开(公告)日：2010-12-16
申请号：PCT/US2010024342
申请日：2010-02-16
申请人： WOODRUFF JACOB , VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
发明人： WOODRUFF JACOB , VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
IPC分类号： H01L31/042
CPC分类号： H01L31/0322 , C23C18/08 , C23C18/1204 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C28/021 , C23C28/023 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/36 , H01L21/02425 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one equilibrium and/or near equilibrium material. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.
摘要翻译：提供了用于形成吸收层的方法和装置。在一个实施例中，提供了一种方法，包括在基底上沉积溶液以形成前体层。该溶液包含至少一种平衡和/或接近平衡的材料。前体层在一个或多个步骤中被处理以形成光伏吸收层。在一个实施例中，吸收层可以通过将前体层加工成固体膜，然后在包含元素周期表第VIA族元素的至少一种元素的气氛中使固体膜热反应以形成光伏吸收体层来形成。任选地，吸收层可以通过前体层在包含元素周期表第VIA族元素的至少一种元素的气氛中的热反应来处理，以形成光伏吸收层。

3. 发明申请

WO2008095146A2 SOLAR CELL ABSORBER LAYER FORMED FROM METAL ION PRECURSORS 审中-公开
标题翻译：从金属离子前驱体形成的太阳能电池吸收层
公开(公告)号：WO2008095146A2
公开(公告)日：2008-08-07
申请号：PCT/US2008052730
申请日：2008-01-31
申请人： VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
发明人： VAN DUREN JEROEN K J , ROBINSON MATTHEW R , SAGER BRIAN M
IPC分类号： H01L31/04
CPC分类号： H01L31/03928 , H01L31/06 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one polar solvent, at least one binder, and at least one Group IB and/or IIIA hydroxide. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.
摘要翻译：提供了用于形成吸收层的方法和装置。在一个实施方案中，提供了一种方法，其包括在基底上沉积溶液以形成前体层。溶液包含至少一种极性溶剂，至少一种粘合剂和至少一种IB族和/或IIIA型氢氧化物。在一个或多个步骤中处理前体层以形成光伏吸收层。在一个实施方案中，吸收层可以通过将前体层加工成固体膜，然后在至少含有元素周期表第VIA族元素的气氛中使固体膜热反应形成光伏吸收层来产生。任选地，吸收层可以通过前体层在至少含有周期表第VIA族元素的气氛中进行热反应来加工，以形成光伏吸收层。

4. 发明公开

EP2353188A4 HYBRID TRANSPARENT CONDUCTIVE ELECTRODES 审中-公开
标题翻译： HYBRID，透明，导电电极
公开(公告)号：EP2353188A4
公开(公告)日：2015-04-08
申请号：EP09829656
申请日：2009-10-30
申请人： POON HAK FEI , ROBINSON MATTHEW R , ERBEN CHRISTOPHER , VAN DUREN JEROEN K J , SHEATS JAMES R
发明人： POON HAK FEI , ROBINSON MATTHEW R , ERBEN CHRISTOPHER , VAN DUREN JEROEN K J , SHEATS JAMES R
IPC分类号： H01L31/042 , H01L31/05
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , Y02E10/50

5. 发明申请

WO2007065096A3 CHALCOGENIDE SOLAR CELLS 审中-公开
标题翻译： CHALCOGENIDE太阳能电池
公开(公告)号：WO2007065096A3
公开(公告)日：2007-12-21
申请号：PCT/US2006061324
申请日：2006-11-29
申请人： NANOSOLAR INC , VAN DUREN JEROEN K J , BOLLMAN BRENT , ROSCHEISEN MARTIN R , SAGER BRIAN M
发明人： VAN DUREN JEROEN K J , BOLLMAN BRENT , ROSCHEISEN MARTIN R , SAGER BRIAN M
IPC分类号： H01L31/0216 , B05D5/12
CPC分类号： H01L31/0322 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C24/10 , C23C26/00 , C23C26/02 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549
摘要： A precursor material for forming a film of a group IB-IIIA- chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IDA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA- chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-III族 - 硫族化合物化合物的膜的前体材料和制备该膜的方法。该膜含有IB族硫族化物纳米颗粒和/或IIIA族硫族化物纳米颗粒和/或纳米金属和/或纳米微滴和额外硫属元素的来源。或者，膜可以包含具有核心纳米颗粒的核 - 壳纳米颗粒，包括用元素硫族元素材料的外壳涂覆的IB和/或IDA元素。制备IB-III族 - 硫族化合物组合物的膜的方法包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热熔化额外的硫属元素并使硫族元素与 IB族和IIIA族元素和/或硫族化物以形成致密膜。

6. 发明申请

WO2007101136A3 HIGH-THROUGHPUT FORMATION OF SEMICONDUCTOR LAYER BY USE OF CHALCOGEN AND INTER-METALLIC MATERIAL 审中-公开
标题翻译：通过使用CHALCOGEN和金属间材料形成半导体层的高通量
公开(公告)号：WO2007101136A3
公开(公告)日：2008-03-06
申请号：PCT/US2007062764
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
发明人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
IPC分类号： B05D3/00 , H01L31/032 , H01L31/0336
CPC分类号： H01L31/0322 , C22C1/002 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IDA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen- free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.
摘要翻译：公开了一种通过使用含硫属原子的蒸气形成半导体前体层的高通量方法。在一个实施方案中，该方法包括形成包含任何形状的组IB和/或组IDA颗粒的前体材料。该方法可以包括在衬底的表面上形成前体材料的前体层。该方法还可以包括将基本上无氧的硫属元素气氛中的颗粒前体材料加热到足以使颗粒反应并从硫族化物颗粒中释放硫属元素的处理温度，其中硫族元素呈现液体形式并用作助熔剂以改善元素的混合以期望的化学计量比形成IB-IIIA族硫族化合物膜。硫属化合物气氛可以在处理温度下提供大于或等于前体层中液态硫属元素的蒸气压的分压。

7. 发明申请

WO2007101135A2 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC MICROFLAKE PARTICLES 审中-公开
标题翻译：来自金属微细颗粒的半导体前驱层的高通量印刷
公开(公告)号：WO2007101135A2
公开(公告)日：2007-09-07
申请号：PCT/US2007062763
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , ROBINSON MATTHEW R , LEIDHOLM CRAIG R
发明人： VAN DUREN JEROEN K J , ROBINSON MATTHEW R , LEIDHOLM CRAIG R
CPC分类号： H01L31/18 , H01L31/0322 , H01L31/06 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a' high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于从微片粒子高通量印刷半导体前体层的方法和装置。在一个实施方案中，该方法包括在合适的条件下，在合适的载体中转化非平面或平面前体材料，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有“高纵横比”的微片。由微片形成的所得致密膜在形成光伏器件中特别有用。在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

8. 发明申请

WO2007146964A3 THIN-FILM DEVICES FROMED FROM SOLID PARTICLES 审中-公开
标题翻译：来自固体颗粒的薄膜装置
公开(公告)号：WO2007146964A3
公开(公告)日：2008-02-28
申请号：PCT/US2007071048
申请日：2007-06-12
申请人： ROBINSON MATTHEW R , EBERSPACHER CHRIS , VAN DUREN JEROEN K J
发明人： ROBINSON MATTHEW R , EBERSPACHER CHRIS , VAN DUREN JEROEN K J
IPC分类号： H01L21/203
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 2O0C and about 2000C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料在该温度范围内为液体。另一种材料可以是IA族材料。可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。上述温度范围可以在约20℃至约200℃之间。应当理解，该合金的熔融温度可以比基于IIIA的材料的元素形式的熔融温度更高。

9. 发明申请

WO2007101138A2 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC NANOFLAKE PARTICLES 审中-公开
标题翻译：来自金属间纳米颗粒的半导体前驱层的高通量印刷
公开(公告)号：WO2007101138A2
公开(公告)日：2007-09-07
申请号：PCT/US2007062766
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
发明人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
CPC分类号： H01L31/06 , B82Y30/00 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C18/1283 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, , form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. . In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。特别地，平面颗粒更容易分散，形成更密集的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的纳米片。由纳米片形成的致密膜特别适用于形成光电器件。。在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

10. 发明申请

WO2010062708A3 HYBRID TRANSPARENT CONDUCTIVE ELECTRODES 审中-公开
标题翻译：混合透明导电电极
公开(公告)号：WO2010062708A3
公开(公告)日：2010-08-19
申请号：PCT/US2009062887
申请日：2009-10-30
申请人： POON HAK FEI , ROBINSON MATTHEW R , ERBEN CHRISTOPHER , VAN DUREN JEROEN K J , SHEATS JAMES R
发明人： POON HAK FEI , ROBINSON MATTHEW R , ERBEN CHRISTOPHER , VAN DUREN JEROEN K J , SHEATS JAMES R
IPC分类号： H01L31/042 , H01L31/05
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , Y02E10/50
摘要： Methods and devices are provided for improved photovoltaic devices. In one embodiment, the transparent electrode of a thin-film solar cell is replaced in part by a sheet of nanowires. One technique for use in present invention comprises forming a solar cell having: a) a thinner than usual transparent top electrode of a conductive material having a reduced thickness and b) an interconnected network of nanowires in contact with and/or coated by the top electrode. In some embodiments, the top electrode and network of nanowires increases overall power output of the solar cell compared to an otherwise identical cell using only a) a top electrode layer of the material at a thickness and light transmission equal to a combined thickness and light transmission of the top electrode and the network of nanowires, or b) an interconnected network of nanowires of thickness equal to the combined thickness and light transmission.
摘要翻译：为改进的光伏器件提供了方法和装置。在一个实施例中，薄膜太阳能电池的透明电极部分地被一片纳米线替代。用于本发明的一种技术包括形成太阳能电池，其具有：a）比通常具有较薄厚度的导电材料的透明顶部电极薄，b）与顶部电极接触和/或涂覆的纳米线的互连网络。在一些实施例中，纳米线的顶部电极和网络与其它相同的电池相比，增加了太阳能电池的总功率输出，该电池仅使用a）材料的顶部电极层，其厚度和光透射率等于组合的厚度和光透射率的顶部电极和纳米线网络，或b）互连的纳米线网络，其厚度等于组合的厚度和光透射率。

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