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1. 发明专利

JP2012064805A Led lamp 有权
标题翻译：点灯
公开(公告)号：JP2012064805A
公开(公告)日：2012-03-29
申请号：JP2010208430
申请日：2010-09-16
申请人： Toshiba Corp , Toshiba Materials Co Ltd , 東芝マテリアル株式会社 , 株式会社東芝
发明人： AOKI KATSUAKI
IPC分类号： H01L33/48 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide an LED lamp enabling an user to select the luminescent color (a light emission spectrum), an orientation angle (directivity) of light, and lamp design, according to a preference of the user or a use place, in one lamp body.SOLUTION: An LED lamp comprises: a substrate 7; an LED module 2 having an LED chip 8 mounted on the substrate 7; a base body portion 3 on which the LED module 2 is installed; a globe 4a attached to the base body portion 3 so as to cover the LED module 2 with a space; a fluorescent film 9 provided on an inner surface of the globe 4a while separated from the LED chip 8, and absorbing ultraviolet or violet light emitted from the LED chip 8 to emit visible light; a lighting circuit 11 provided in the base body portion 3, and lighting the LED chip 8; and an attaching/detaching mechanism 12 having a mouthpiece 6 electrically connected with the lighting circuit 11, and making the globe 4a and the base body portion 3a attachable and detachable.
摘要翻译：要解决的问题：提供一种LED灯，其使得用户能够根据用户的偏好或者一个或多个选择来选择发光颜色（发光光谱），光的取向角（方向性）和灯设计使用场所，在一个灯体内。解决方案：LED灯包括：基板7; 具有安装在基板7上的LED芯片8的LED模块2; 安装有LED模块2的基体部3; 附接到基体部分3以以空间覆盖LED模块2的球形体4a; 在与LED芯片8分离的同时设置在灯泡4a的内表面上的荧光膜9，吸收从LED芯片8发出的发出可见光的紫外线或紫色光; 设置在基体部3内的照明电路11，点亮LED芯片8; 以及安装/拆卸机构12，其具有与照明电路11电连接的接口管6，并且使得灯罩4a和基座部分3a可拆卸。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2003347063A Organic electroluminescent display element and manufacturing method therefor 审中-公开
标题翻译：有机电致发光显示元件及其制造方法
公开(公告)号：JP2003347063A
公开(公告)日：2003-12-05
申请号：JP2002149134
申请日：2002-05-23
申请人： Toshiba Corp , 株式会社東芝
发明人： SAWADA MASAHITO , AOKI KATSUAKI , SAITO MAKOTO , KATSUMATA YUTAKA , NISHIMURA ERIKO
IPC分类号： H05B33/26 , H01L51/50 , H05B33/14 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide an organic EL (electroluminescent) display element provided with an anode made of ITO having resistance to a strongly acidic hole transport layer such as a PEDOT-PSS.
SOLUTION: This organic electroluminescent display element is provided with a glass substrate, the anode made of indium tin oxide and formed on the substrate, the strongly acidic hole transport layer formed on the anode, an organic electroluminescent light emitting layer and a cathode formed on the light emitting layer. In the anode made of indium tin oxide, a In
2 O
3 layer is formed on a surface on a side in contact with the hole transport layer.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有由耐腐蚀性强的空穴传输层（例如PEDOT-PSS）制成的具有ITO的阳极的有机EL（电致发光）显示元件。解决方案：该有机电致发光显示元件设置有玻璃基板，由氧化铟锡制成的阳极，形成在基板上，形成在阳极上的强酸性空穴传输层，有机电致发光发光层和阴极形成在发光层上。在由铟锡氧化物制成的阳极中，在与空穴传输层接触的一侧上的表面上形成了一种In 2 3 层。版权所有（C）2004，JPO

3. 发明专利

JP2008244144A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2008244144A
公开(公告)日：2008-10-09
申请号：JP2007082551
申请日：2007-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： AOKI KATSUAKI , KATSUMATA YUTAKA , UNOSAWA KEISUKE
IPC分类号： H01L21/3065
CPC分类号： H01L21/76816 , H01L21/31116
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of forming a hole or a groove having a desired shape in an etching process.
SOLUTION: The manufacturing method of a semiconductor device enables to form a first hole and a second hole having an aspect ratio lower than that of the first hole on an insulating film formed on a semiconductor substrate. The manufacturing method includes executing a first etching processing for etching the insulating film and a second etching processing for etching the insulating film under a condition where the speed of depositing a deposited layer to be formed on the surface of the insulating film is lower than the speed of the first etching processing.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够在蚀刻工艺中形成具有期望形状的孔或凹槽的半导体器件的制造方法。解决方案：半导体器件的制造方法能够形成在半导体衬底上形成的绝缘膜上具有比第一孔低的纵横比的第一孔和第二孔。该制造方法包括执行用于蚀刻绝缘膜的第一蚀刻处理和用于在绝缘膜的表面上沉积形成的沉积层的速度低于速度的条件下蚀刻绝缘膜的第二蚀刻处理的第一次蚀刻处理。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2013012474A Dye-sensitized solar cell 审中-公开
标题翻译：透明的太阳能电池
公开(公告)号：JP2013012474A
公开(公告)日：2013-01-17
申请号：JP2012126576
申请日：2012-06-01
申请人： Toshiba Corp , 株式会社東芝 , Toshiba Materials Co Ltd , 東芝マテリアル株式会社
发明人： SASAKI RYOTO , AOKI KATSUAKI , HAYASE SHUJI
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： Y02E10/542
摘要： PROBLEM TO BE SOLVED: To provide a dye-sensitized solar cell which is excellent in power generation efficiency and has a power storage effect.SOLUTION: The dye-sensitized solar cell has a structure having a transparent electrode layer on a transparent substrate, a first semiconductor layer which has titanium oxide powder having an average particle diameter of 500 nm or less and a dye, a second semiconductor layer which has tungsten oxide powder having an average particle diameter of 548 nm or less and a dye, an electrolyte composition and a counter electrode having a conductive catalyst layer, which are sequentially laminated, as a cell structure. The first semiconductor layer and the second semiconductor layer can be laminated in a reverse order.
摘要翻译：解决问题：提供发电效率优异并具有蓄电效果的染料敏化太阳能电池。解决方案：染料敏化太阳能电池具有在透明基板上具有透明电极层的结构，具有平均粒径为500nm以下的氧化钛粉末的第一半导体层和染料，第二半导体作为细胞结构，将具有平均粒径为548nm以下的氧化钨粉末和依次层叠的染料，电解质组合物和具有导电性催化剂层的对置电极层。可以以相反的顺序层叠第一半导体层和第二半导体层。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2008109071A Method for manufacturing semiconductor device, semiconductor manufacturing apparatus, and semiconductor device 有权
标题翻译：制造半导体器件的方法，半导体器件制造设备和半导体器件
公开(公告)号：JP2008109071A
公开(公告)日：2008-05-08
申请号：JP2007070033
申请日：2007-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUMATA YUTAKA , AOKI KATSUAKI
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for adjusting such a deposited state as the deposition quantity or distribution of reaction products, and for adjusting the dimension of line width or in-wafer surface uniformity, and to provide a semiconductor manufacturing apparatus. SOLUTION: This method for manufacturing a semiconductor device includes: successively and selectively dry-etching a thin film arranged on a wafer in a chamber 9; selectively etching a first thin film arranged on the wafer; and removing at least part of reaction products deposited on a member in the chamber facing the wafer by the etching to cause the distribution state of the deposited reaction products to get closer to a uniform state; and then selectively etching a second film. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种用于调整作为反应产物的沉积量或分布的沉积状态的半导体器件的制造方法，以及用于调整线宽或晶片内表面均匀性的尺寸，以及提供半导体制造装置。解决方案：用于制造半导体器件的方法包括：依次和选择性地干蚀刻设置在腔室9中的晶片上的薄膜; 选择性地蚀刻布置在晶片上的第一薄膜; 以及通过蚀刻去除沉积在面向晶片的腔室中的构件上的反应产物的至少一部分，以使沉积的反应产物的分布状态更接近均匀的状态; 然后选择性地蚀刻第二膜。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2012252873A Electrode for dye-sensitized solar cell, and dye-sensitized solar cell comprising the same 审中-公开
标题翻译：用于透明的太阳能电池的电极和包含它们的透明的太阳能电池
公开(公告)号：JP2012252873A
公开(公告)日：2012-12-20
申请号：JP2011124414
申请日：2011-06-02
申请人： Toshiba Corp , 株式会社東芝 , Toshiba Materials Co Ltd , 東芝マテリアル株式会社
发明人： SASAKI RYOTO , AOKI KATSUAKI
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： Y02E10/542
摘要： PROBLEM TO BE SOLVED: To provide a dye-sensitized solar cell offering high power generation efficiency and capable of storing electricity.SOLUTION: An electrode for a dye-sensitized solar cell contains a tungsten oxide powder having an average particle size of 548 nm or smaller, a first titanium oxide powder having an average particle size of 100 nm or smaller, and a second titanium oxide powder having an average particle size of 200 to 500 nm. The particle size distribution of the titanium oxide powder obtained by measurement preferably has peaks in both ranges of 1-50 nm and 200-500 nm.
摘要翻译：要解决的问题：提供提供高发电效率并能够存储电力的染料敏化太阳能电池。解决方案：染料敏化太阳能电池用电极含有平均粒径为548nm以下的氧化钨粉末，平均粒径为100nm以下的第一氧化钛粉末和第二钛平均粒径为200〜500nm的氧化物粉末。通过测定获得的氧化钛粉末的粒度分布优选在1-50nm和200-500nm的两个范围内具有峰值。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013222661A Photovoltaic power generation system and power storage device 审中-公开
标题翻译：光伏发电系统和蓄电装置
公开(公告)号：JP2013222661A
公开(公告)日：2013-10-28
申请号：JP2012094981
申请日：2012-04-18
申请人： Toshiba Corp , 株式会社東芝 , Toshiba Materials Co Ltd , 東芝マテリアル株式会社
发明人： SUZUKI HIROYUKI , SUZUKI KOJI , NAKA TOMOMICHI , AOKI KATSUAKI , SASAKI RYOTO
IPC分类号： H01M14/00 , H01L31/042
CPC分类号： H01M10/465 , H01G9/2031 , H01G9/2059 , H01G9/2081 , H01L24/01 , H01L25/047 , H01L2924/0002 , H01L2924/12042 , H01M4/48 , H02J7/35 , H02J7/355 , H02S40/38 , Y02E10/542 , Y02E10/566 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a photovoltaic power generation system which is excellent in an I-V characteristic and is capable of suppressing the drop of an output voltage when irradiation of light is stopped. and a power storage device.SOLUTION: The photovoltaic generation system according to an embodiment includes: a power generation module having at least one power generation part for converting energy of light to electric power; and a power storage module having the plurality of power storage devices for storing the electric power converted by the power generation part. The power generation module and the power storage module are connected in parallel. In the power storage module, the plurality of power storage devices are connected in series. Then, the number of the power storage devices is larger than the number of the power generation parts.
摘要翻译：要解决的问题：提供一种I-V特性优异并能够抑制光照射停止时的输出电压下降的光电发电系统。以及蓄电装置。具体实施方式根据实施方式的光生伏打发生系统具备：发电模块，具有将光的能量转换成电力的至少一个发电部; 以及具有用于存储由发电部转换的电力的多个蓄电装置的蓄电模块。发电模块和蓄电模块并联连接。在蓄电模块中，多个蓄电装置串联连接。然后，蓄电装置的数量大于发电部的数量。

8. 发明专利

JP2012064471A Led lamp 有权
标题翻译：点灯
公开(公告)号：JP2012064471A
公开(公告)日：2012-03-29
申请号：JP2010208431
申请日：2010-09-16
申请人： Toshiba Corp , Toshiba Materials Co Ltd , 東芝マテリアル株式会社 , 株式会社東芝
发明人： AOKI KATSUAKI
IPC分类号： F21S2/00 , F21V3/00 , F21V3/02 , F21V3/04 , F21V9/16 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide an LED lamp endowed with a function of effectively decomposing harmful substance even under indoor visible light of low illuminance.SOLUTION: The LED lamp 1a is provided with an LED module 2 equipped with a substrate 7 and LED chips 8 mounted on the substrate 7, a base body part 3a on which the LED module 2 is installed, a globe 4a attached to the base body part 3a so as to cover the LED module 2 with a space, a fluorescent film 9 fitted on an inner face of the globe 4a separated from the LED chips 8 for emitting white-color light by absorbing ultraviolet or violet color light irradiated from the LED chips 8, a visible-light responsive photocatalyst layer 12 formed on an outer face of the globe 4a, and a lighting circuit 11 fitted inside the base body part 3a for lighting the LED chips 8.
摘要翻译：要解决的问题：即使在低照度的室内可见光下，也能够提供具有有效分解有害物质的功能的LED灯。解决方案：LED灯1a设置有配备有基板7和安装在基板7上的LED芯片8的LED模块2，安装有LED模块2的基体部3a，附接到基体部分3a以空间覆盖LED模块2，安装在与LED芯片8分离的用于通过吸收紫外线或紫色光照射白色光的LED芯片8的内表面上的荧光膜9 来自LED芯片8，形成在球状体4a的外表面上的可见光响应性光催化剂层12和装配在基体部3a内的照明电路11，用于点亮LED芯片8.版权所有（C））2012，JPO＆INPIT

9. 发明专利

JP2008244252A Surface treatment method, etching processing method and manufacturing method of electronic device 有权
标题翻译：电子设备的表面处理方法，蚀刻加工方法和制造方法
公开(公告)号：JP2008244252A
公开(公告)日：2008-10-09
申请号：JP2007084433
申请日：2007-03-28
申请人： Toshiba Corp , 株式会社東芝
发明人： AOKI KATSUAKI , HAYAMIZU NAOYA , HATTORI KEI , OKA YUKIHIRO , KANETAKA HIDEUMI , HASEGAWA MAKOTO
IPC分类号： H01L21/3065 , H01L21/304
CPC分类号： H01L21/02071 , Y10S438/905 , Y10S438/906
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment method capable of removing a reaction product or a hard mask from a treated workpiece immediately after etching processing, and to provide an etching processing method and a manufacturing method of an electronic device.
SOLUTION: The surface treatment method includes: executing oxygen gas plasma treatment to remove a reaction product containing carbon fluoride when the reaction product is deposited by sequentially etching each of layers of the treated workpiece having a multilayer film; and after removing a reaction product, removing a reaction product containing an oxide by using a hydrogen fluoride gas.
COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2002087878A PLASMA RESISTANT MEMBER AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002087878A
公开(公告)日：2002-03-27
申请号：JP2001036819
申请日：2001-02-14
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： MIYAZAKI AKIRA , FUJITA MITSUHIRO , SHIMAI SHUNZO , MORITA TAKASHI , SUZUKI SHUNICHI , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： C04B35/44 , C23C14/34 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member of low cost type which is also excellent in mechanical strengths such as bending strength and toughness and to provide its manufacturing method. SOLUTION: The plasma resistant member of this invention is distinguished by being substantially made of yttrium aluminum garnet sintered compact and by that the inside of the sintered compact or sintered compact structure is reinforced by proper selection of average crystalline grain size of the sintered compact and addition and incorporation or the like of a reinforcing agent.

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