专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06317372B1 Semiconductor memory device equipped with serial/parallel conversion circuitry for testing memory cells 失效
标题翻译：半导体存储器件配有用于测试存储单元的串行/并行转换电路
公开(公告)号：US06317372B1
公开(公告)日：2001-11-13
申请号：US09528983
申请日：2000-03-20
申请人： Tomonori Hayashi , Naoharu Shinozaki , Hiroyoshi Tomita
发明人： Tomonori Hayashi , Naoharu Shinozaki , Hiroyoshi Tomita
IPC分类号： G11C2900
CPC分类号： G11C29/40 , G11C29/34 , G11C29/48
摘要： An input conversion unit converts serial data supplied from the exterior into parallel data. Each of the converted parallel data is respectively written into a plurality of memory cell areas. An output conversion unit converts parallel data constructed by data read from each memory cell area into serial data. An operational unit is activated during a testing mode so as to logically operate on the parallel data read from each memory cell area. By writing predetermined data into each memory cell area in advance, it is confirmed by a logic operation that correct data is stored in each memory cell area. The data can be checked simultaneously for the plurality of memory cell areas so that the operation test in the memory cell areas can be carried out at high speed. Besides, serial data accepted, twice per cycle of a data strobe signal, is converted into parallel data. Each of the converted parallel data is respectively written into a first memory cell area and a second memory cell area. Parallel data read from the first and second memory cell area is logically operated in a testing mode and the operation result is output at once in synchronization with the clock signal. Accordingly, the data can be checked simultaneously for the first and the second memory cell area so that the operation test in the memory cell areas can be carried out at high speed.
摘要翻译：输入转换单元将从外部提供的串行数据转换为并行数据。每个转换的并行数据分别写入多个存储单元区域。输出转换单元将从每个存储单元区域读取的数据构成的并行数据转换为串行数据。在测试模式期间激活操作单元，以便对从每个存储单元区域读取的并行数据进行逻辑运算。通过预先将预定数据写入每个存储单元区域，通过逻辑运算来确认正确的数据被存储在每个存储单元区域中。可以同时检查多个存储单元区域的数据，使得可以高速地执行存储单元区域中的操作测试。此外，接受数据选通信号每周期两次的串行数据被转换为并行数据。每个转换的并行数据分别被写入第一存储器单元区域和第二存储器单元区域中。从第一和第二存储单元区域读取的并行数据在测试模式下逻辑运行，并且与时钟信号同步地一次输出运算结果。因此，可以同时检查第一和第二存储单元区域的数据，使得可以高速地执行存储单元区域中的操作测试。

2. 发明授权

US06288585B1 Semiconductor device using external power voltage for timing sensitive signals 有权
标题翻译：半导体器件使用外部电源电压进行时序敏感信号
公开(公告)号：US06288585B1
公开(公告)日：2001-09-11
申请号：US09535745
申请日：2000-03-27
申请人： Yoshihide Bando , Nobutaka Taniguchi , Hiroyoshi Tomita , Kota Hara , Naoharu Shinozaki
发明人： Yoshihide Bando , Nobutaka Taniguchi , Hiroyoshi Tomita , Kota Hara , Naoharu Shinozaki
IPC分类号： H03L706
CPC分类号： H03L7/0805 , G11C7/1078 , G11C7/1084 , G11C7/1087 , G11C7/22 , G11C7/222 , H03L7/0812
摘要： A semiconductor device receiving a stable external power voltage includes a reduced-voltage-generation circuit which generates an internally reduced power voltage, an input circuit which operates based on the internally reduced power voltage, causing the internally reduced power voltage to fluctuate, a clock-control circuit which generates an internal clock signal, an output circuit which outputs a data signal to an exterior of the device at output timings responsive to the internal clock signal, a clock-delivery circuit which conveys the internal clock signal from the clock-control circuit to the output circuit, and operates based on the external power voltage such as to make the output timings substantially unaffected by fluctuation of the internally reduced power voltage.
摘要翻译：接收稳定的外部电源电压的半导体器件包括产生内部降低的电源电压的降压产生电路，基于内部降低的电源电压进行操作的输入电路，使内部降低的电源电压波动，控制电路，其产生内部时钟信号;输出电路，其响应于内部时钟信号以输出定时将数据信号输出到设备的外部;时钟传送电路，其传送来自时钟控制电路的内部时钟信号到输出电路，并且基于外部电源电压进行操作，以使得输出定时基本上不受内部降低的功率电压的波动的影响。

3. 发明授权

US06522182B2 Integrated circuit device incorporating DLL circuit 有权
标题翻译：集成电路器件结合DLL电路
公开(公告)号：US06522182B2
公开(公告)日：2003-02-18
申请号：US09385008
申请日：1999-08-27
申请人： Hiroyoshi Tomita , Naoharu Shinozaki , Nobutaka Taniguchi , Waichirou Fujieda , Yasuharu Sato , Kenichi Kawasaki , Masafumi Yamazaki , Kazuhiro Ninomiya
发明人： Hiroyoshi Tomita , Naoharu Shinozaki , Nobutaka Taniguchi , Waichirou Fujieda , Yasuharu Sato , Kenichi Kawasaki , Masafumi Yamazaki , Kazuhiro Ninomiya
IPC分类号： H03L706
CPC分类号： H03L7/0805 , G11C7/1072 , G11C7/222 , H03K5/131
摘要： In the present invention, an external power source supplied to an integrated circuit device is divided into a first external power source for the DLL circuit and a second external power source for circuits other than the DLL circuit. According to the present invention, it is arranged that power source noise generated in the second external power source cannot be transmitted to the variable delay circuit by utilizing the first external power source preferably for the variable delay circuit of the DLL circuit and even more preferably for its delay unit. Also, preferably, it is arranged that power source noise generated in the second external power source cannot be transmitted to the phase coincidence detection unit by utilizing the first power source for the phase coincidence detection unit in the phase comparison circuit of the DLL circuit. Also, by connecting the first external earthing power source to the variable delay circuit and/or phase coincidence detection unit, the effect of power source noise from the second external earthing power source originating from the operation of circuits other than these is suppressed.
摘要翻译：在本发明中，提供给集成电路装置的外部电源被分成用于DLL电路的第一外部电源和除了DLL电路以外的电路的第二外部电源。根据本发明，通过利用第一外部电源优选用于DLL电路的可变延迟电路，而将第二外部电源中产生的电源噪声不能传输到可变延迟电路，甚至更优选地用于其延迟单位。此外，优选地，通过利用DLL电路的相位比较电路中的相位一致检测单元的第一电源，将第二外部电源中产生的电源噪声不能发送到相位一致检测单元。此外，通过将第一外部接地电源连接到可变延迟电路和/或相位一致检测单元，抑制源于除了这些以外的电路的操作的来自第二外部接地电源的电源噪声的影响。

4. 发明授权

US06307806B1 Semiconductor integrated circuit and method of operating the same 有权
标题翻译：半导体集成电路及其运行方法
公开(公告)号：US06307806B1
公开(公告)日：2001-10-23
申请号：US09652162
申请日：2000-08-31
申请人： Hiroyoshi Tomita , Naoharu Shinozaki
发明人： Hiroyoshi Tomita , Naoharu Shinozaki
IPC分类号： G11C800
CPC分类号： G11C7/1018 , G11C8/18 , G11C11/4082 , G11C29/78
摘要： A command receiving circuit receives a command signal for determining a circuit operation, in synchronization with a clock signal and it outputs the received command signal as an internal command signal. An address switching circuit permits transmission of an address signal to an internal circuit upon receiving the command signal. The internal circuit receives the address signal before the reception of the command signal, thereby to start its operation. As a result, the internal circuit can be operated at high speed. Besides, the address switching circuit inhibits the transmission of the address signal to the internal circuit upon receiving the internal command signal or the clock signal. Therefore, even when the level of the address signal has changed after the reception of the command signal, the change does not lead to operating the internal circuit. Accordingly, the power consumption of the semiconductor integrated circuit is reduced. Meanwhile, the semiconductor integrated circuit comprises a plurality of memory cores and a bank switch for selecting the memory cores. The bank switch feeds the address signal to predetermined memory core(s) of the memory cores in accordance with the value of the address signal. Since the memory core can receive the address signal before the validation of a command, the circuit operation is performed at high speed even in the semiconductor integrated circuit including the plurality of memory cores are controlled as bank.
摘要翻译：命令接收电路与时钟信号同步地接收用于确定电路操作的命令信号，并且将所接收的命令信号作为内部命令信号输出。地址切换电路允许在接收到命令信号时将地址信号发送到内部电路。内部电路在接收到命令信号之前接收地址信号，从而开始其操作。因此，内部电路可以高速运转。此外，地址切换电路在接收到内部命令信号或时钟信号时，禁止向内部电路发送地址信号。因此，即使在接收到指令信号之后地址信号的电平变化，也不会导致内部电路的工作。因此，半导体集成电路的功耗降低。同时，半导体集成电路包括多个存储器核和用于选择存储器核的组开关。存储体交换机根据地址信号的值将存储器核心的地址信号提供给预定的存储器核心。由于存储核心可以在命令验证之前接收地址信号，所以即使在包括多个存储器核心的半导体集成电路被控制为存储体的情况下，电路操作也以高速执行。

5. 发明授权

US06318707B1 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US06318707B1
公开(公告)日：2001-11-20
申请号：US09536467
申请日：2000-03-28
申请人： Kota Hara , Hiroyoshi Tomita , Naoharu Shinozaki
发明人： Kota Hara , Hiroyoshi Tomita , Naoharu Shinozaki
IPC分类号： G11C800
CPC分类号： G11C7/1084 , G11C7/1051 , G11C7/106 , G11C7/1069 , G11C7/109 , G11C7/22 , G11C7/225
摘要： A semiconductor integrated circuit device includes a clock buffer circuit receiving a clock signal, a data buffer circuit receiving a data signal, an output circuit outputting the data signal from the data buffer circuit in accordance with the clock signal from the clock buffer circuit, and an adjustment circuit adjusting timings of the clock signal and the data signals.
摘要翻译：一种半导体集成电路装置，包括接收时钟信号的时钟缓冲电路，接收数据信号的数据缓冲电路，根据来自时钟缓冲器电路的时钟信号从数据缓冲电路输出数据信号的输出电路，以及调整电路调整时钟信号和数据信号的定时。

6. 发明授权

US06339353B1 Input circuit of a memory having a lower current dissipation 有权
标题翻译：具有较低电流消耗的存储器的输入电路
公开(公告)号：US06339353B1
公开(公告)日：2002-01-15
申请号：US09542454
申请日：2000-04-04
申请人： Hiroyoshi Tomita , Naoharu Shinozaki
发明人： Hiroyoshi Tomita , Naoharu Shinozaki
IPC分类号： H03K3356
CPC分类号： G11C7/109 , G11C8/06 , H03K3/012 , H03K3/356121 , H03K3/356139 , H03K5/133 , H03K5/1534
摘要： The present invention provides an input circuit having small current consumption in a clock synchronization type semiconductor integrated circuit. The input circuit is activated by an activation signal to receive an input signal and an activation signal generating circuit generates the activation signal. The activation signal generating circuit activates intermittently the activation signal for a time shorter than a period of a clock signal and including a setup time and a hold time of the input signal in order to activate the input circuit. The input circuit is activated only for the limited time of one period of the clock signal and therefore current consumption can be reduced.
摘要翻译：本发明提供一种在时钟同步型半导体集成电路中具有小电流消耗的输入电路。输入电路由激活信号激活以接收输入信号，激活信号产生电路产生激活信号。激活信号发生电路间歇地激活比时钟信号周期短的时间的激活信号，并且包括输入信号的建立时间和保持时间，以激活输入电路。输入电路仅在时钟信号的一个周期的有限时间内被激活，因此可以减少电流消耗。

7. 发明申请

US20120225531A1 SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING CAPACITOR 有权
标题翻译：半导体器件，包括具有电容器的存储器单元
公开(公告)号：US20120225531A1
公开(公告)日：2012-09-06
申请号：US13473242
申请日：2012-05-16
申请人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
发明人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
IPC分类号： H01L21/02
CPC分类号： H01L27/0207 , G11C5/063 , G11C7/02 , G11C7/18 , G11C11/4097 , H01L27/1085 , H01L27/10885 , H01L27/10897
摘要： A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer.
摘要翻译：半导体器件包括半导体衬底; 存储单元阵列，包括形成在所述半导体衬底上并在所述半导体衬底的表面上沿第一方向和第二方向布置成矩阵的多个存储单元; 多个读出放大器，形成在半导体衬底上并包括第一读出放大器和第二读出放大器; 以及沿着存储单元阵列上方的第一方向延伸并沿第二方向并排布置的多个位线，其中多个位线包括形成在第一布线层中的第一位线对和第二位线形成在位于第一布线层上方的第二布线层中。

8. 发明授权

US07723796B2 Semiconductor device with current mirror circuit having two transistors of identical characteristics 有权
标题翻译：具有电流镜电路的半导体器件具有两个相同特性的晶体管
公开(公告)号：US07723796B2
公开(公告)日：2010-05-25
申请号：US11902568
申请日：2007-09-24
申请人： Hiroyoshi Tomita
发明人： Hiroyoshi Tomita
IPC分类号： H01L23/62
CPC分类号： G05F3/262 , H01L29/4238
摘要： A semiconductor device includes a current-mirror circuit including a first ring-shape gate, a second ring-shape gate, a first diffusion layer formed around the first ring-shape gate and the second ring-shape gate, a second diffusion layer formed inside the first ring-shape gate, a third diffusion layer formed inside the second ring-shape gate, an interconnect line electrically connecting the first ring-shape gate and the second ring-shape gate to a same potential, and an STI area formed around the first diffusion layer, wherein a first transistor corresponding to the first ring-shape gate and a second transistor corresponding to the second ring-shape gate constitute the current-mirror circuit, wherein gates of dummy transistors that do not function as transistors are situated between the STI area and the first and second ring-shape gates, and are arranged both in a first direction and in a second direction substantially perpendicular to the first direction.
摘要翻译：一种半导体器件包括：电流镜电路，包括第一环形栅极，第二环形栅极，形成在第一环状栅极和第二环形栅极周围的第一扩散层，第二扩散层，第一环形栅极，形成在第二环形栅极内部的第三扩散层，将第一环形栅极和第二环形栅极电连接到相同电位的互连线，以及形成在第二环形栅极周围的STI区域第一扩散层，其中对应于第一环形栅极的第一晶体管和对应于第二环形栅极的第二晶体管构成电流镜电路，其中不用作晶体管的虚拟晶体管的栅极位于 STI区域和第一和第二环形门，并且布置在基本上垂直于第一方向的第一方向和第二方向上。

9. 发明授权

US07539042B2 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07539042B2
公开(公告)日：2009-05-26
申请号：US11783318
申请日：2007-04-09
申请人： Hiroyoshi Tomita
发明人： Hiroyoshi Tomita
IPC分类号： G11C11/24 , G11C7/00 , G11C8/00
CPC分类号： G11C11/4074 , G11C11/401 , G11C29/50 , G11C2029/0403 , G11C2207/2254 , H01L27/0207 , H01L27/10829
摘要： The present invention suppresses the refresh failure of a DRAM due to the dispersion of a threshold of a MOSFET. The DRAM has a first unit for recording a set value of a back bias potential to be applied to a back gate of a cell transistor and a second unit for generating a back bias potential based on the set value of the back bias potential recorded in the first unit and supplying the generated back bias potential to the back gate, wherein when a threshold of a MOSFET which has a structure identical to the cell transistor and which has been fabricated in the same process as the cell transistor is greater than a target value which the cell transistor should have, a value shallower than the back bias potential for the target value is recorded in the second unit.
摘要翻译：本发明抑制由于MOSFET的阈值的偏差引起的DRAM的刷新故障。 DRAM具有第一单元，用于记录要施加到单元晶体管的背栅的背偏置电位的设定值，以及用于产生背偏电位的第二单元，其基于记录在所述单元晶体管中的背偏电位的设定值第一单元并将所产生的反向偏置电位提供给所述后栅极，其中当具有与所述单元晶体管相同的并且已经以与所述单元晶体管相同的工艺制造的结构的MOSFET的阈值大于目标值时，单元晶体管应当具有比目标值的背偏电位浅的值被记录在第二单元中。

10. 发明授权

US07109775B2 Delay circuit having reduced power supply voltage dependency 有权
标题翻译：具有降低的电源电压依赖性的延迟电路
公开(公告)号：US07109775B2
公开(公告)日：2006-09-19
申请号：US11110685
申请日：2005-04-21
申请人： Hiroyoshi Tomita
发明人： Hiroyoshi Tomita
IPC分类号： H03H11/26
CPC分类号： H03H11/265 , G11C7/22 , G11C7/222 , G11C11/406 , G11C11/40615 , G11C11/4076 , G11C29/02 , G11C29/023 , G11C29/028 , H03K5/133 , H03K2005/00071
摘要： A delay circuit includes: an input signal line (IN) through which an input signal is inputted; a capacitor (106) charged with and discharging electric charge; a first switch (101) connected to the input signal line and operating according to the input signal when the capacitor is to be charged with electric charge; a second switch (102) connected to the input signal line and operating according to the input signal when the electric charge is to be discharged from the capacitor; and a comparison circuit (107) comparing a voltage of the capacitor and a reference voltage to output a delay signal of the input signal.
摘要翻译：延迟电路包括：输入信号线（IN），输入信号经输入信号线输入; 充电并放电的电容器（106）第一开关（101），连接到所述输入信号线，并且当所述电容器要被充电时根据所述输入信号进行操作; 第二开关（102），连接到输入信号线，并且当电荷从电容器放电时，根据输入信号进行操作; 以及将电容器的电压和参考电压进行比较以输出输入信号的延迟信号的比较电路（107）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式