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1. 发明申请

US20050223980A1 Substrate processing device, substrate processing method, and developing device 有权
标题翻译：基板加工装置，基板加工方法及显影装置
公开(公告)号：US20050223980A1
公开(公告)日：2005-10-13
申请号：US10515635
申请日：2003-05-16
申请人： Tetsutoshi Awamura , Yukio Kiba , Keiichi Tanaka , Takahiro Okubo , Shuuichi Nishikido
发明人： Tetsutoshi Awamura , Yukio Kiba , Keiichi Tanaka , Takahiro Okubo , Shuuichi Nishikido
IPC分类号： G03F7/30 , H01L21/00 , B05C5/00 , B05B7/00 , B05B9/06
CPC分类号： H01L21/67178 , G03F7/30 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： Rinsing nozzles 310a to 310e are moved on a wafer W while they are discharging rinsing solution 326. At that point, discharging openings 317a to 317e are contacted to developing solution 350 coated on the wafer W or rinsing solution 326 on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution 350 can push away the developing solution 350.
摘要翻译：冲洗喷嘴310a至310e在排出冲洗溶液326时在晶片W上移动。此时，排出口317a至317e与涂覆在晶片W上的显影液350或晶片W上的漂洗溶液326接触。因此，能够抑制对晶片W的冲击。结果，可以防止图案倒塌。此外，显影液350的前面部分可以推开显影液350。

2. 发明授权

US07387455B2 Substrate processing device, substrate processing method, and developing device 有权
标题翻译：基板加工装置，基板加工方法及显影装置
公开(公告)号：US07387455B2
公开(公告)日：2008-06-17
申请号：US10515635
申请日：2003-05-16
申请人： Tetsutoshi Awamura , Yukio Kiba , Keiichi Tanaka , Takahiro Okubo , Shuuichi Nishikido
发明人： Tetsutoshi Awamura , Yukio Kiba , Keiichi Tanaka , Takahiro Okubo , Shuuichi Nishikido
IPC分类号： H01L21/302
CPC分类号： H01L21/67178 , G03F7/30 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： Rinsing nozzles 310a to 310e are moved on a wafer W while they are discharging rinsing solution 326. At that point, discharging openings 317a to 317e are contacted to developing solution 350 coated on the wafer W or rinsing solution 326 on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution 350 can push away the developing solution 350.
摘要翻译：冲洗喷嘴310a至310e在排出冲洗溶液326时在晶片W上移动。此时，排出口317a至317e与涂覆在晶片W上的显影液350或晶片W上的漂洗溶液326接触。因此，能够抑制对晶片W的冲击。结果，可以防止图案倒塌。此外，显影液350的前面部分可以推开显影液350。

3. 发明授权

US07766566B2 Developing treatment apparatus and developing treatment method 有权
标题翻译：开发治疗仪器和开发治疗方法
公开(公告)号：US07766566B2
公开(公告)日：2010-08-03
申请号：US11495732
申请日：2006-07-31
申请人： Takahiro Kitano , Masami Akimoto , Shuuichi Nishikido , Dai Kumagai
发明人： Takahiro Kitano , Masami Akimoto , Shuuichi Nishikido , Dai Kumagai
IPC分类号： G03D5/04
CPC分类号： G03D5/04 , G03F7/30 , G03F7/3021 , H01L21/6715 , H01L21/67748 , Y10S134/902
摘要： In the present invention, a substrate transfer unit into/from which a substrate is transferred from/to the outside of a treatment container and a developing treatment unit in which development of the substrate is performed are arranged side by side in the treatment container, and a carrier mechanism is provided which carries the substrate while grasping an outside surface of the substrate from both sides, between the substrate transfer unit and the developing treatment unit. A developing solution supply nozzle for supplying a developing solution onto the substrate and a gas blow nozzle for blowing a gas to the substrate, are provided between the substrate transfer unit and the developing treatment unit and above a carriage path along which the substrate is carried, and a cleaning solution supply nozzle is provided in the developing treatment unit for supplying a cleaning solution onto the substrate. According to the present invention, since the substrate is carried with its outside surface being grasped, spread of contamination can be prevented to restrain generation of particles in the treatment container.
摘要翻译：在本发明中，在处理容器中并排设置有将基板从处理容器的外部转移到基板转移单元和进行基板的显影的显影处理单元，并且提供了一种承载机构，其承载基板，同时从基板转印单元和显影处理单元之间的两侧抓住基板的外表面。用于将显影液供给到基板上的显影液供给喷嘴和用于将气体吹送到基板的气体吹出喷嘴设置在基板转印单元和显影处理单元之间以及载置基板的滑架路径上方，并且在显影处理单元中设置清洁液供给喷嘴，用于将清洗液供给到基板上。根据本发明，由于基板的外表面被抓住，因此可以防止污染物的扩散，从而抑制处理容器中的颗粒的产生。

4. 发明授权

US07419316B2 Developing treatment apparatus 失效
标题翻译：开发治疗仪器
公开(公告)号：US07419316B2
公开(公告)日：2008-09-02
申请号：US11243483
申请日：2005-10-05
申请人： Tetsuya Kitamura , Shuuichi Nishikido
发明人： Tetsuya Kitamura , Shuuichi Nishikido
IPC分类号： G03B5/00
CPC分类号： H01L21/67184 , G03F7/3021 , H01L21/67051 , H01L21/6715 , H01L21/67178
摘要： A developing treatment apparatus for performing a developing treatment for a substrate, includes a substrate holding member for holding the substrate; an outer peripheral plate surrounding an outer peripheral portion of the substrate to form a gap between the plate and the outer peripheral portion of the substrate; and gas blowout ports for forming a gas flow which flows on a rear face of the substrate from a central portion side of the substrate to the outer peripheral portion side of the substrate, and passes by a lower end portion side of the gap.
摘要翻译：用于对基板进行显影处理的显影处理装置包括用于保持基板的基板保持部件; 围绕所述基板的外周部分的外周板，以在所述板和所述基板的外周部分之间形成间隙; 以及气体吹出口，用于形成从基板的中心部侧向基板的外周侧侧在基板的背面侧流动的气流，并通过该间隙的下端侧。

5. 发明授权

US06551400B2 Coating apparatus 失效
标题翻译：涂装设备
公开(公告)号：US06551400B2
公开(公告)日：2003-04-22
申请号：US09816389
申请日：2001-03-26
申请人： Keizo Hasbe , Shuuichi Nishikido , Nobuo Konishi , Takayuki Toshima , Kazutoshi Yoshioka
发明人： Keizo Hasbe , Shuuichi Nishikido , Nobuo Konishi , Takayuki Toshima , Kazutoshi Yoshioka
IPC分类号： B05C502
CPC分类号： G03F7/162 , B05C11/08
摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.
摘要翻译：将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。因此，处理空间被溶剂雾填满。在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。

6. 发明授权

US08578953B2 Substrate cleaning apparatus, substrate cleaning method, and computer-readable storage medium 有权
标题翻译：基板清洁装置，基板清洗方法和计算机可读存储介质
公开(公告)号：US08578953B2
公开(公告)日：2013-11-12
申请号：US12000670
申请日：2007-12-14
申请人： Yasushi Takiguchi , Taro Yamamoto , Akihiro Fujimoto , Shuuichi Nishikido , Dai Kumagai , Naoto Yoshitaka , Takahiro Kitano , Yoichi Tokunaga
发明人： Yasushi Takiguchi , Taro Yamamoto , Akihiro Fujimoto , Shuuichi Nishikido , Dai Kumagai , Naoto Yoshitaka , Takahiro Kitano , Yoichi Tokunaga
IPC分类号： B08B3/00 , B08B1/02
CPC分类号： H01L21/0209 , B08B1/002 , B08B1/04 , B08B3/02 , B08B5/02 , B08B7/0057 , H01L21/67028 , H01L21/67046 , H01L21/67051 , H01L21/68742 , H01L21/68764
摘要： A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back surface.
摘要翻译：公开的用于清洁基板的背面的基板清洁装置包括：第一基板支撑部，其构造成在基板的背面的第一区域处支撑基板，所述背面朝下; 第二基板支撑部，其构造成在所述基板的背面的第二区域处支撑所述基板，所述第二区域与所述第一区域分离; 清洗液供给部，构成为向所述基板的背面供给清洗液; 干燥部，其构造成干燥所述基板的背面的第二区域; 以及清洁部，其构造成当所述基板被所述第一基板支撑部支撑所述基板时，清洁所述基板的背面的第三区域，所述第三区域包括所述第二区域以及所述基板的背面的第四区域，基板由第二基板支撑部分支撑，除了后表面的第二区域之外的第四区域。

7. 发明授权

US06402399B2 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US06402399B2
公开(公告)日：2002-06-11
申请号：US09837942
申请日：2001-04-18
申请人： Kazuo Sakamoto , Shuuichi Nishikido
发明人： Kazuo Sakamoto , Shuuichi Nishikido
IPC分类号： G03D500
CPC分类号： G03F7/3021
摘要： A developing method comprising, a step of holding a substrate in substantially a horizontal position, the substrate coated with a photoresist film which has a pattern-exposed region where a predetermined circuit pattern is formed by light exposure, and a step of developing the photoresist film by starting to apply, at a time, a developing solution to the entire pattern-exposed region of the photoresist film.
摘要翻译：一种显影方法，包括：将基板保持在大致水平位置的步骤，所述基板涂覆有光致抗蚀剂膜，所述光致抗蚀剂膜具有通过曝光形成预定电路图案的图案曝光区域，以及显影所述光致抗蚀剂膜通过开始对光致抗蚀剂膜的整个图案曝光区域施加显影溶液。

8. 发明授权

US06241403B1 Developing method and developing apparatus 失效
公开(公告)号：US06241403B1
公开(公告)日：2001-06-05
申请号：US09312541
申请日：1999-05-14
申请人： Kazuo Sakamoto , Shuuichi Nishikido
发明人： Kazuo Sakamoto , Shuuichi Nishikido
IPC分类号： G03D500
CPC分类号： G03F7/3021
摘要： A developing method comprising, a step of holding a substrate in substantially a horizontal position, the substrate coated with a photoresist film which has a pattern-exposed region where a predetermined circuit pattern is formed by light exposure, and a step of developing the photoresist film by starting to apply, at a time, a developing solution to the entire pattern-exposed region of the photoresist film.

9. 发明授权

US06228561B1 Film forming method and film forming apparatus 失效
标题翻译：成膜方法和成膜装置
公开(公告)号：US06228561B1
公开(公告)日：2001-05-08
申请号：US08791618
申请日：1997-01-31
申请人： Keizo Hasebe , Shuuichi Nishikido , Nobuo Konishi , Takayuki Toshima , Kazutoshi Yoshioka
发明人： Keizo Hasebe , Shuuichi Nishikido , Nobuo Konishi , Takayuki Toshima , Kazutoshi Yoshioka
IPC分类号： G03F716
CPC分类号： G03F7/162 , B05C11/08
摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.
摘要翻译：将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。因此，处理空间被溶剂雾填满。在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。

10. 发明申请

US20070221253A1 Wet Processing Device and Wet Processing Method 有权
标题翻译：湿加工设备和湿法加工方法
公开(公告)号：US20070221253A1
公开(公告)日：2007-09-27
申请号：US11579979
申请日：2005-03-31
申请人： Shuuichi Nishikido
发明人： Shuuichi Nishikido
IPC分类号： H01L21/304
CPC分类号： H01L21/6715 , B08B3/02 , H01L21/67051 , Y10S134/902
摘要： The flow of a processing liquid poured onto the surface of a substrate at a standstill to process the substrate from the surface to the back surface of the substrate is suppressed to achieve satisfactory cleaning. When a processing liquid is poured onto a substrate held in a horizontal position by a substrate holding unit to carryout a predetermined process, for example, a cleaning liquid is discharged through a discharge opening corresponding to the entire circumference of the back surface of the substrate before pouring the processing liquid onto the surface of the substrate, and the cleaning liquid discharged on the back surface of the substrate and a liquid flowing from the surface to the back surface of the substrate are sucked through a suction opening corresponding to the entire circumference of the back surface of the substrate and included in a first suction means. Thus an outward flow of the cleaning liquid is produced on the back surface of the substrate. For example, the flow of the liquid from the surface to the back surface of the substrate can be suppressed without resorting to a shake-off action resulting from rotation and, consequently, the substrate can be satisfactorily cleaned.
摘要翻译：抑制在停止时倾倒在基板表面上的处理液从基板的表面到背面处理基板的流动，以实现令人满意的清洗。当处理液体通过基板保持单元倾倒在保持在水平位置的基板上以进行预定的处理时，例如，清洁液体通过与基板的后表面的整个周边对应的排出口排出，然后将处理液倒入基板的表面，排出到基板的背面的清洗液和从基板的表面流向背面的液体通过与该基板的整周相对应的吸引口吸入并且包括在第一抽吸装置中。因此，在基板的背面产生清洗液的向外的流动。例如，可以抑制液体从基板的表面到背面的流动，而不需要采取由旋转产生的抖动作用，因此可以令人满意地清洁基板。

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