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1. 发明授权

US06355902B2 Plasma film forming method and plasma film forming apparatus 失效
标题翻译：等离子体成膜法和等离子体成膜装置
公开(公告)号：US06355902B2
公开(公告)日：2002-03-12
申请号：US09750683
申请日：2001-01-02
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
IPC分类号： B23K1000
CPC分类号： H01L21/0212 , C23C16/26 , H01L21/02274 , H01L21/312 , H01L21/3127 , H01L21/76801 , H01L21/7682 , H01L21/76837
摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
摘要翻译：将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

2. 发明授权

US06215087B1 Plasma film forming method and plasma film forming apparatus 失效
标题翻译：等离子体成膜法和等离子体成膜装置
公开(公告)号：US06215087B1
公开(公告)日：2001-04-10
申请号：US09101516
申请日：1998-07-10
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Osamu Yokoyama , Shuichi Ishizuka , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
IPC分类号： B23K1000
CPC分类号： H01L21/0212 , C23C16/26 , H01L21/02274 , H01L21/312 , H01L21/3127 , H01L21/76801 , H01L21/7682 , H01L21/76837
摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.
摘要翻译：将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

3. 发明授权

US06218299B1 Semiconductor device and method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06218299B1
公开(公告)日：2001-04-17
申请号：US09101244
申请日：1998-07-06
申请人： Takashi Akahori , Yoko Naito , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Yoko Naito , Shunichi Endo , Masahide Saito , Takeshi Aoki , Tadashi Hirata
IPC分类号： H01L2144
CPC分类号： H01L21/0212 , C23C16/029 , C23C16/26 , C23C16/325 , H01L21/02115 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02274 , H01L21/02304 , H01L21/3127 , H01L21/76801 , H01L21/76819 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L21/7685 , H01L21/76856
摘要： For example, in a plasma processing system, C4F8 gas and C2H4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350° C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.
摘要翻译：例如，在等离子体处理系统中，在压力为0.2Pa，微波功率为2.7kW的条件下，分别以60sccm和30sccm的流量将C4F8气体和C2H4气体作为成膜气体引入， 1.5kW的射频功率和350℃的晶片温度。同时，还以150sccm的流量引入等离子体气体以形成F含量例如为22％的CF膜13，该硅膜13的相对介电常数为2.4。

4. 发明授权

US06443165B1 Method for cleaning plasma treatment device and plasma treatment system 有权
标题翻译：等离子体处理装置和等离子体处理系统的清洗方法
公开(公告)号：US06443165B1
公开(公告)日：2002-09-03
申请号：US09101554
申请日：1998-09-21
申请人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Shuichi Ishizuka , Masahide Saito , Tadashi Hirata
发明人： Takashi Akahori , Masaki Tozawa , Yoko Naito , Risa Nakase , Shuichi Ishizuka , Masahide Saito , Tadashi Hirata
IPC分类号： B08B600
CPC分类号： C23C16/4405
摘要： A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.
摘要翻译：一种用于等离子体处理系统的方法，其缩短了在真空容器中固化的含氟碳膜的清洁所需的时间，并且在进行清洁时保护转印台的表面。在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成散射的CO 2。另一方面，F分散为F2。因此，去除CF膜。

5. 发明授权

US06727182B2 Process for the production of semiconductor device 失效
标题翻译：半导体器件生产工艺
公开(公告)号：US06727182B2
公开(公告)日：2004-04-27
申请号：US09101308
申请日：1998-10-15
申请人： Takashi Akahori , Shuichi Ishizuka , Shunichi Endo , Takeshi Aoki , Tadashi Hirata
发明人： Takashi Akahori , Shuichi Ishizuka , Shunichi Endo , Takeshi Aoki , Tadashi Hirata
IPC分类号： H01L21302
CPC分类号： H01L21/31144 , H01L21/31138 , H01L21/76802 , H01L23/5226 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl3 gas. Thereafter, when the surface of the wafer is irradiated with O2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO2 or the like may be substituted for the film.
摘要翻译：本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜（CF膜）的方法。在CF膜4上形成例如TiN膜41的导电膜。在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体蚀刻TiN膜41。此后，当用O 2等离子体照射晶片的表面时，对CF膜进行化学蚀刻，并且还蚀刻抗蚀剂膜42。然而，由于TiN膜41用作掩模，因此可以形成预定的孔。尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作将互连层粘附到CF膜4并用作互连层的一部分的粘附层。作为掩模，可以用SiO 2等的绝缘膜代替膜。

6. 发明授权

US06949829B2 Semiconductor device and fabrication method therefor 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06949829B2
公开(公告)日：2005-09-27
申请号：US10380038
申请日：2001-09-11
申请人： Takashi Akahori , Gishi Chung , Kohei Kawamura
发明人： Takashi Akahori , Gishi Chung , Kohei Kawamura
IPC分类号： H01L21/314 , H01L21/768 , H01L23/532 , H01L23/48 , H01L21/4763
CPC分类号： H01L21/76807 , H01L21/314 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.
摘要翻译：作为蚀刻停止件的阻挡层19形成有第二槽14a和接触孔13a。铜被埋在第二槽14a和接触孔13a内，由此形成插头层22和覆盖的布线层21，该布线层21经由插塞层22连接到下面的布线层17。阻挡层19由Si，C和N组成。第一和第二盖层18和23也由Si，C和N组成。

7. 发明授权

US06737350B1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06737350B1
公开(公告)日：2004-05-18
申请号：US09665960
申请日：2000-09-21
申请人： Takashi Akahori , Kouichiro Inazawa , Kouji Senoo , Masaaki Hagiwara
发明人： Takashi Akahori , Kouichiro Inazawa , Kouji Senoo , Masaaki Hagiwara
IPC分类号： H01L214763
CPC分类号： H01L21/76832 , H01L21/0212 , H01L21/02274 , H01L21/31116 , H01L21/3127 , H01L21/31612 , H01L21/76807 , H01L21/76808 , H01L21/76835 , H01L2221/1031 , H01L2221/1036
摘要： A semiconductor device using, e.g., a fluorine containing carbon film, as an interlayer dielectric film is produced by a dual damascene method which is a simple technique. After an dielectric film, e.g., an SiO2 film 3, is deposited on a substrate 2, the SiO2 film 3 is etched to form a via hole 31 therein, and then, a top dielectric film, e.g., a CF film 4, is deposited on the top face of the SiO2 film 3. If the CF film is deposited by activating a thin-film deposition material having a bad embedded material, e.g., C6F6 gas, as a plasma, the CF film 4 can be deposited on the top face of the SiO2 film 3 while inhibiting the CF film from being embedded into the via hole 31. Subsequently, by etching the CF film 4 to form a groove 41 therein, it is possible to easily produce a dual damascene shape wherein the groove 41 is integrated with the via hole 31.
摘要翻译：使用例如含氟碳膜作为层间电介质膜的半导体器件通过双镶嵌法制造，这是一种简单的技术。在介质膜（例如SiO 2膜3）沉积在衬底2上之后，对SiO 2膜3进行蚀刻以在其中形成通孔31，然后在SiO 2膜3的顶面上沉积顶部电介质膜（例如CF膜4）。如果CF膜通过激活作为等离子体，具有不良嵌入材料（例如，C 6 F 6气体）的薄膜沉积材料可以将CF膜4沉积在SiO 2膜3的顶面上，同时抑制CF膜嵌入到通孔31中。随后，通过蚀刻CF膜4以在其中形成凹槽41，可以容易地产生双镶嵌形状，其中凹槽41与通孔31一体化。

8. 发明授权

US5508066A Method for forming a thin film 失效
标题翻译：薄膜形成方法
公开(公告)号：US5508066A
公开(公告)日：1996-04-16
申请号：US305732
申请日：1994-09-14
申请人： Takashi Akahori
发明人： Takashi Akahori
IPC分类号： C23C16/02 , C23C16/14 , C23C16/34 , C23C16/509 , C23C16/511 , H01L21/285 , H05H1/02
CPC分类号： H01J37/32192 , C23C16/0281 , C23C16/14 , C23C16/34 , C23C16/509 , C23C16/511 , H01L21/28556 , H01J2237/332
摘要： In order to decompose TiCl.sub.4 to Ti and Cl completely, extremely high energy of more than 400 kcal mol.sup.-1 is required.In the method according to the present invention, use of unequilibrium plasma under reduced pressure is noticed, and it is especially noticed that in the plasma generated by resonance phenomenon, there are high energy electrons, which collide and enhance decomposition and reduction. Therefore, itis possible to form a Ti film without such high substrate temperature as 2000.degree. C., and more, to form a Tifilm with good step coverage even in a fine contact hole.
摘要翻译：为了完全分解TiCl4至Ti和Cl，需要超过400 kcal mol-1的极高能量。在根据本发明的方法中，注意到在减压下使用不平衡等离子体，特别注意到在由共振现象产生的等离子体中存在高能电子，这会碰撞并增强分解和还原。因此，可以形成不具有如此高的基板温度为2000℃的Ti膜，更可以形成即使在细小的接触孔中也具有良好的阶梯覆盖的Tifilm。

9. 发明授权

US5296404A Method for forming a thin film for a semiconductor device 失效
标题翻译：用于形成半导体器件用薄膜的方法
公开(公告)号：US5296404A
公开(公告)日：1994-03-22
申请号：US779497
申请日：1991-10-24
申请人： Takashi Akahori , Akira Tanihara
发明人： Takashi Akahori , Akira Tanihara
IPC分类号： H01L21/285 , H01L21/768 , H01L21/441
CPC分类号： H01L21/76843 , H01L21/28556 , Y10S438/909
摘要： A method for forming a thin film, comprising the steps of:generating a plasma in a plasma generation chamber by action of an electric field generated by a microwave and a magnetic field generated by an exciting coil arranged around; andintroducing the generated plasma into a reaction chamber, resulting in forming a thin film on a sample placed on a sample stage, wherein it is a chracteristic to form a metal nitride film on said sample, by introducing Ar, H.sub.2, and N.sub.2 gas into said plasma generation chamber, while introducing a metallic gas into said reaction chamber.By the method according to the present invention, it is possible to form a thin film having good Step Coverage on the contact hole, in addition, on the side wall of the contact hole a thinner film can be formed than that on the bottom. As a result, in the next step, filling in with interconnection materials can be surely performed, resulting in improving reliability of LSI devices.
摘要翻译：一种形成薄膜的方法，包括以下步骤：通过由微波产生的电场和由周围布置的励磁线圈产生的磁场产生等离子体产生室中的等离子体; 并将产生的等离子体引入反应室，导致在放置在样品台上的样品上形成薄膜，其特征在于在所述样品上形成金属氮化物膜，通过将Ar，H 2和N 2气体引入所述等离子体产生室同时将金属气体引入所述反应室。通过根据本发明的方法，可以在接触孔上形成具有良好阶跃覆盖率的薄膜，此外，在接触孔的侧壁上可以形成比底部更薄的薄膜。结果，在下一步骤中，可以可靠地进行互连材料的填充，从而提高LSI器件的可靠性。

10. 发明授权

US06337290B1 Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same 有权
标题翻译：具有氟加成碳介电膜的半导体装置及其制造方法
公开(公告)号：US06337290B1
公开(公告)日：2002-01-08
申请号：US09612224
申请日：2000-07-07
申请人： Takashi Akahori , Akira Suzuki
发明人： Takashi Akahori , Akira Suzuki
IPC分类号： H01L2348
CPC分类号： H01L21/32051 , C23C16/26 , C23C16/30 , C23C16/56 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/02343 , H01L21/2855 , H01L21/28556 , H01L21/3127 , H01L21/76801 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76843
摘要： A semiconductor device has a dielectric film made of a fluorine-added carbon film formed on a substrate, a metallic layer formed on the fluorine-added carbon film and an adhesive layer formed between the dielectric film and the metallic layer. The adhesive layer is made of a compound layer having carbon and the metal (or metal the same as the metal included in the metallic layer), to protect the metallic layer from being peeled-off from the fluorine-added carbon film.
摘要翻译：半导体器件具有由形成在基底上的氟化碳膜构成的电介质膜，形成在氟加成膜上的金属层和形成在电介质膜与金属层之间的粘接层。粘合剂层由具有碳和金属（或与金属层中包含的金属相同的金属）的化合物层制成，以保护金属层不被氟化碳膜剥离。

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