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1. 发明公开

EP4083567A1 LASER SENSOR, SYSTEM AND METHOD FOR SELF-MIXING INTERFEROMETRY 有权
公开(公告)号：EP4083567A1
公开(公告)日：2022-11-02
申请号：EP21171555.2
申请日：2021-04-30
申请人： TRUMPF Photonic Components GmbH , Robert Bosch GmbH
发明人： SPRUIT, Hans , HELLMIG, Jochen , GRONENBORN, Stephan , MEYER, Johannes , PETERSEN, Andreas , SCHLEBUSCH, Thomas
IPC分类号： G01B9/02 , G01B11/02 , G01P3/36 , A61B5/16 , A61B3/113 , G06F3/01
摘要： A laser sensor comprises a laser source (12) emitting a laser beam (22), and optics (20) projecting the laser beam (22) as a one- or two-dimensional patterned laser beam (26) onto an object (24) to be examined, such that a distance of the patterned laser beam (26) from the laser source (12) varies along the patterned laser beam (26) projected on the object (24). A detector (14) determines a self-mixing interference signal generated by laser light of the patterned laser beam (26) reflected from the object (24) back into the laser source (12). Circuitry (18) spectrally analyzes the self-mixing interference signal and extracts from the spectrum of the self-mixing interference signal multiple frequencies indicative of multiple distances along the patterned laser beam (26) from the laser source (12) and/or multiple velocities along the patterned laser beam (26) with respect to the laser source (12). A system with such a laser sensor and a related method and computer program product are also disclosed.

2. 发明申请

WO2023088659A1 HALBLEITERBAUTEIL 审中-公开
公开(公告)号：WO2023088659A1
公开(公告)日：2023-05-25
申请号：PCT/EP2022/080194
申请日：2022-10-28
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： GRONENBORN, Stephan , KOLB, Johanna Sophie
IPC分类号： H01S5/042 , H01S5/183 , H01S5/42
摘要： Ein Halbleiterbauteil zum Emittieren von Licht mit einem Grundkörper, der mindestens einen Mesakörper mit einem Emissionsbereich für das Licht aufweist, dem ein erster Spiegelabschnitt, ein zweiter Spiegelabschnitt und ein zwischen den beiden Spiegelabschnitten angeordneter aktiver Abschnitt zur Erzeugung des Lichts zugeordnet sind, und mit elektrischen Kontakten zum Einspeisen von elektrischer Energie in den aktiven Abschnitt, die auf einer Oberfläche des Grundkörpers mindestens einen fächerartigen Kontaktabschnitt aufweisen, der sich auf der Oberfläche erstreckende zinkenartige Kontaktfortsätze aufweisen, die den mindestens einen Mesakörper wenigstens teilweise umgeben. Verfahren zum Herstellen eines Halbleiterbauteils.

3. 发明申请

WO2020016054A1 LASER ARRANGEMENT WITH REDUCED BUILDING HEIGHT 审中-公开
公开(公告)号：WO2020016054A1
公开(公告)日：2020-01-23
申请号：PCT/EP2019/068380
申请日：2019-07-09
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： JUTTE, Petrus Theodorus , BLOEMEN, Pascal Jean Henri , GRONENBORN, Stephan
IPC分类号： H01S5/00 , H01S5/42 , G02B19/00 , G02B27/09 , H01S5/183 , H01S5/02
摘要： The invention describes laser arrangement (100) comprising a laser array and an optical arrangement, wherein the laser array comprises at a multitude of lasers (130) arranged in a first regular pattern, wherein each laser (130) is arranged to emit the same laser emission profile around a first optical axis with a divergence angle Θ/2 with respect to the first optical axis in at least one direction perpendicular to the first optical axis, wherein the optical arrangement comprises a diffusor (140), wherein the diffusor (140) comprises an array of optical elements (21) arranged in a second regular pattern, wherein each optical element (21) comprises a second optical axis, wherein each optical element (21) is arranged to provide a defined illumination pattern along at least one first illumination axis (33) in a reference plane in a defined field-of-view (160) if laser light (10) is received within a defined range of angles by each surface element of the respective optical element (21), wherein the defined range of angles is smaller than or equal to a range of angles between -θ and +θ, preferably between - θ/2 and + θ/2 with respect to the second optical axis, wherein the lasers (130) and the optical elements (21) are arranged relative to each other such that the diffusor (140) transforms laser light (10) received from the lasers (130) to transformed light (150), and wherein an emission characteristic of the transformed light (150) along the first illumination axis (33) in the reference plane in the defined field-of-view (160) is characterized by the same characteristics as the defined illumination pattern. The invention further describes a lighting device comprising such a laser arrangement (100) and a time of flight camera (200) comprising such a laser arrangement (100) or lighting device. The invention finally describes a method of manufacturing the laser arrangement (100).

4. 发明申请

WO2023072979A1 LASERVORRICHTUNG 审中-公开
公开(公告)号：WO2023072979A1
公开(公告)日：2023-05-04
申请号：PCT/EP2022/079855
申请日：2022-10-26
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： MOENCH, Holger Joachim , GRONENBORN, Stephan
IPC分类号： G02B19/00 , G02B27/09 , G02B27/10
摘要： Eine Laservorrichtung (10) mit einer mehrere Halbleiterlaser (13) aufweisenden Halbleiterlaseranordnung (12) und einer Okularanordnung (21), die mehrere Okulareinheiten (22) aufweist, die jeweils einen Blendenabschnitt (11) eines Halbleiterlasers (13) und ein optisches Element (24) aufweisen, wobei jedem einzelnen der Halbleiterlaser (13) eine einzelne Okulareinheit (22) zugeordnet ist, sodass das aus dem jeweiligen Halbleiterlaser (13) emittierte und durch den Blendenabschnitt (11) begrenzte Laserlicht (16) durch das optische Element (24) der jeweils zugeordneten Okulareinheit (22) propagiert, wobei sich eine Relativposition des Blendenabschnitts (11) zu dem optischen Element (24) einer ersten Okulareinheit (221) von der Relativposition des Blendenabschnitts (11) zu dem optischen Element (24) mindestens einer zweiten Okulareinheit (222) unterscheidet und/oder sich eine Blendenabschnittsgeometrie des Blendenabschnitts (11) der ersten Okulareinheit (221) von der Blendenabschnittsgeometrie des Blendenabschnitts (11) mindestens einer zweiten Okulareinheit (222) unterscheidet.

5. 发明申请

WO2020245397A1 VCSEL BASED PATTERN PROJECTOR 审中-公开
公开(公告)号：WO2020245397A1
公开(公告)日：2020-12-10
申请号：PCT/EP2020/065684
申请日：2020-06-05
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： GRONENBORN, Stephan , MOENCH, Holger Joachim
IPC分类号： G01B11/25 , G02B27/09
摘要： An optoelectronic apparatus (1) and system adapted to generate a structured light pattern (70) are presented. The optoelectronic apparatus comprises an first array (10) of vertical cavity surface emitting lasers (11), VCSELs; a first homogenization optics arrangement (20) associated with the first array of vertical cavity surface emitting lasers; a second array (10) of vertical cavity surface emitting lasers (11), VCSELs; a second homogenization optics arrangement (20) associated with the second array of vertical cavity surface emitting lasers; wherein the homogenization optics arrangements, each associated with a different VCSEL array, are arranged such that their intensity distributions (63) add up to a common homogeneous top-hat intensity distribution (61) in an intermediate plane (60); and a pattern optics arrangement (30) adapted to generate a structured light pattern (70) based on the common homogeneous intensity distribution (61) in the intermediate plane (60). The present disclosure further relates to a corresponding method.

6. 发明申请

WO2021198269A1 ILLUMINATION DEVICE FOR A DISTANCE MEASUREMENT CAMERA SYSTEM, A CORRESPONDING ILLUMINATION METHOD AND A TOF CAMERA SYSTEM 审中-公开
公开(公告)号：WO2021198269A1
公开(公告)日：2021-10-07
申请号：PCT/EP2021/058317
申请日：2021-03-30
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： GRONENBORN, Stephan
IPC分类号： G01S7/481 , G01S17/894 , G01S17/931 , G01S7/4815
摘要： The present invention relates to an illumination device (100) for a distance measurement camera (500), in particular a time of flight, TOF, camera system (500), a corresponding illumination method and a distance measurement camera system (500) comprising said illumination device (100) in order to improve distance measurements. The illumination device (100) is configured to illuminate a particular region on an illumination plane (150) with two different illumination profiles such as a first homogenous illumination profile (155a) and a second spot pattern illumination profile (155b). The homogeneous illumination profile can enable a measurement with improved lateral resolution whereas the spot pattern illumination can enable a measurement with improved depth resolution.

7. 发明申请

WO2021115883A1 METHOD OF LITHOGRAPHICALLY FORMING AN OPTICAL STRUCTURE IN A SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：WO2021115883A1
公开(公告)日：2021-06-17
申请号：PCT/EP2020/084311
申请日：2020-12-02
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： GRONENBORN, Stephan
IPC分类号： G03F7/00 , G03F7/20
摘要： A method of lithographically forming an optical structure (120) in a semiconductor substrate (102), wherein the optical structure (120) to be formed extends along one or more first sub-areas (A1) of the area of the substrate (102), comprises: providing a semiconductor substrate (102); applying a layer of photoresist (150) on an initial surface (151) of the semiconductor substrate (102); exposing the photoresist (150) with exposure light and subsequently developing the photoresist (150), wherein a dose of the exposure light varies along the area of the substrate (102) such that, after developing, the remaining layer of photoresist has a photoresist relief profile, which, in the one or more first sub-areas (A1) resembles the optical structure (120) to be formed, and, in one or more second sub-areas (A2) outside the one or more first sub-areas (A1), has a height over the initial surface (151) of the semiconductor substrate (102) which exceeds the maximum height of the remaining layer of photoresist (150) in the one or more first sub-areas (A1); etching the photoresist (150) and the semiconductor substrate (102) to transfer the photoresist relief profile into the semiconductor substrate (102) to obtain the optical structure (120) in the semiconductor substrate (102) in the one or more first sub-areas (A1) and a support structure (122) in the one or more second sub-areas (A2) of the semiconductor substrate.

8. 发明申请

WO2021083641A1 LIGHT SOURCE, SENSOR AND METHOD OF ILLUMINATING A SCENE 审中-公开
公开(公告)号：WO2021083641A1
公开(公告)日：2021-05-06
申请号：PCT/EP2020/078449
申请日：2020-10-09
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： GRONENBORN, Stephan
IPC分类号： G01S7/481 , G01B11/25 , G02B19/00 , G02B27/09
摘要： A light source comprises an array (20) of Vertical Cavity Surface Emitting Lasers (VCSELs) (22). The array (20) comprises at least two sub-arrays (24), each sub- array (24) comprising at least one VCSEL (22). The sub-arrays (24) are displaced with respect to one another along a first axis (y). The sub-arrays (24) are configured to individually emit light independent from light emission of the other sub-array or sub-arrays (24). The light source comprises an optical member (26) configured as a single optical element. The optical member is configured to transform light emitted by the sub-arrays (24) into substantially parallel illumination lines (14) in a target area (16). The illumination lines are arranged along the first axis (y). Each illumination line (14) has a width in direction of the first axis (y) and a length in direction of a second axis (x) perpendicular to the first axis (y), wherein the width is smaller than the length.

9. 发明申请

WO2020002028A1 VCSEL ARRAY WITH SMALL PULSE DELAY 审中-公开
公开(公告)号：WO2020002028A1
公开(公告)日：2020-01-02
申请号：PCT/EP2019/065887
申请日：2019-06-17
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： WEIGL, Alexander , GRONENBORN, Stephan , MOENCH, Holger Joachim
IPC分类号： H01S5/022 , H01S5/026 , H01S5/042 , H01S5/42 , G01S17/89 , G01S7/481 , H01S5/02 , H01S5/062 , H01S5/183
摘要： The invention describes a Vertical Cavity Surface Emitting Laser (VCSEL) array (100) comprising at least two VCSEL sub-arrays, wherein each VCSEL sub-array comprises a multitude of VCSELs arranged on a substrate (110), wherein the at least two VCSEL sub-arrays are electrically contacted by means of a first electrical contact arrangement (105, 107) common to the VCSELs within a respective VCSEL sub-array, and a second electrical contact arrangement (150, 155), wherein the second electrical contact arrangement (150, 155) comprises a multitude of second electrical contacts (150), each second electrical contact (150) contacting a respective single VCSEL within the respective VCSEL sub-array individually, wherein each second electrical contact (150) comprises a second metal- semiconductor interface to a second semiconductor layer of an associated VCSEL of the multitude of VCSELs, wherein the second electrical contacts (150) are arranged to electrically pump the associated VCSEL along a current path to the first electrical contact arrangement (105, 107), wherein the current paths between the first electrical contact arrangement (105, 107) and the second electrical contacts (150) via the multitude of VCSELs are characterized by at least one symmetry selected out of the group of rotation symmetry, mirror symmetry and translation symmetry. The invention further relates to a light emitting device comprising such a VCSEL array (100), a time of flight camera comprising such a light emitting device or VCSEL array (100) and a method of manufacturing the VCSEL array (100).

10. 发明公开

EP4131676A1 VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF FABRICATING SAME 有权
公开(公告)号：EP4131676A1
公开(公告)日：2023-02-08
申请号：EP21189897.8
申请日：2021-08-05
申请人： TRUMPF Photonic Components GmbH
发明人： WEIGL, Alexander , GRONENBORN, Stephan
IPC分类号： H01S5/183
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed which comprises a semiconductor layer structure (12) including a first mirror (13), an outcoupling mirror (14) and an active region (16) between the first mirror (13) and the outcoupling mirror (14). The VCSEL further comprises an electrical contact arrangement (30). A current confinement region (20) surrounds a contiguous area (22) of the layer structure (12), and the electrical contact arrangement (30) is arranged to electrically pump the active region (16) to generate laser emission in a single non-fundamental mode extending over the electrically contiguous area (22). The outcoupling mirror (14) has a first reflectivity in one or more first sub-areas (34) of the contiguous area (22) and a second reflectivity in one or more second sub-areas (36) of the contiguous area (22) outside the one or more first sub-areas (34), wherein the second reflectivity is lower than the first reflectivity and the single non-fundamental mode has single intensity peaks in the one or more first sub-areas (34) and an intensity in the one or more second sub-areas (36) which is lower than 50% of the intensity in the one or more first sub-areas (34). A method of fabricating such a VCSEL is described as well.

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