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1. 发明申请

WO2023274848A2 VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUTEILS UND SOLCH EIN HALBLEITERBAUTEIL 审中-公开
公开(公告)号：WO2023274848A2
公开(公告)日：2023-01-05
申请号：PCT/EP2022/067235
申请日：2022-06-23
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： KÖRNER, Roman , WEIGL, Alexander , MÖNCH, Holger Joachim , SCHMIDT, Berthold
IPC分类号： H01S5/30 , H01S5/183 , H01S5/20 , H01S5/042 , H01S5/40 , H01S5/42 , H01S5/02 , H01S5/026 , H01S5/0217 , H01S5/0264 , H01S5/04256 , H01S5/04257 , H01S5/18302 , H01S5/18305 , H01S5/18308 , H01S5/18369 , H01S5/1838 , H01S5/2063 , H01S5/3095 , H01S5/4018 , H01S5/423
摘要： Verfahren zur Herstellung eines Halbleiterbauteils (10) zum Emittieren von Licht mit einem Grundkörper (9), der eine aktive Schicht (16) zur Erzeugung des Lichts und einen durch eine Blendenstruktur (26) begrenzten Tunnelkontakt (27) aufweist, wobei die Blendenstruktur zur Einschnürung von in die aktive Schicht eingeleitetem Strom dient, umfassend ein Erzeugen der Blendenstruktur im Bereich des Tunnelkontakts durch einen Implantationsschritt. Halbleiterbauteil mit implantierter Blende, inbesondere ausgeführt als Oberflächenemitter mit vertikalem Resonator (VCSEL).

2. 发明申请

WO2020002028A1 VCSEL ARRAY WITH SMALL PULSE DELAY 审中-公开
公开(公告)号：WO2020002028A1
公开(公告)日：2020-01-02
申请号：PCT/EP2019/065887
申请日：2019-06-17
申请人： TRUMPF PHOTONIC COMPONENTS GMBH
发明人： WEIGL, Alexander , GRONENBORN, Stephan , MOENCH, Holger Joachim
IPC分类号： H01S5/022 , H01S5/026 , H01S5/042 , H01S5/42 , G01S17/89 , G01S7/481 , H01S5/02 , H01S5/062 , H01S5/183
摘要： The invention describes a Vertical Cavity Surface Emitting Laser (VCSEL) array (100) comprising at least two VCSEL sub-arrays, wherein each VCSEL sub-array comprises a multitude of VCSELs arranged on a substrate (110), wherein the at least two VCSEL sub-arrays are electrically contacted by means of a first electrical contact arrangement (105, 107) common to the VCSELs within a respective VCSEL sub-array, and a second electrical contact arrangement (150, 155), wherein the second electrical contact arrangement (150, 155) comprises a multitude of second electrical contacts (150), each second electrical contact (150) contacting a respective single VCSEL within the respective VCSEL sub-array individually, wherein each second electrical contact (150) comprises a second metal- semiconductor interface to a second semiconductor layer of an associated VCSEL of the multitude of VCSELs, wherein the second electrical contacts (150) are arranged to electrically pump the associated VCSEL along a current path to the first electrical contact arrangement (105, 107), wherein the current paths between the first electrical contact arrangement (105, 107) and the second electrical contacts (150) via the multitude of VCSELs are characterized by at least one symmetry selected out of the group of rotation symmetry, mirror symmetry and translation symmetry. The invention further relates to a light emitting device comprising such a VCSEL array (100), a time of flight camera comprising such a light emitting device or VCSEL array (100) and a method of manufacturing the VCSEL array (100).

3. 发明公开

EP4131676A1 VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF FABRICATING SAME 有权
公开(公告)号：EP4131676A1
公开(公告)日：2023-02-08
申请号：EP21189897.8
申请日：2021-08-05
申请人： TRUMPF Photonic Components GmbH
发明人： WEIGL, Alexander , GRONENBORN, Stephan
IPC分类号： H01S5/183
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed which comprises a semiconductor layer structure (12) including a first mirror (13), an outcoupling mirror (14) and an active region (16) between the first mirror (13) and the outcoupling mirror (14). The VCSEL further comprises an electrical contact arrangement (30). A current confinement region (20) surrounds a contiguous area (22) of the layer structure (12), and the electrical contact arrangement (30) is arranged to electrically pump the active region (16) to generate laser emission in a single non-fundamental mode extending over the electrically contiguous area (22). The outcoupling mirror (14) has a first reflectivity in one or more first sub-areas (34) of the contiguous area (22) and a second reflectivity in one or more second sub-areas (36) of the contiguous area (22) outside the one or more first sub-areas (34), wherein the second reflectivity is lower than the first reflectivity and the single non-fundamental mode has single intensity peaks in the one or more first sub-areas (34) and an intensity in the one or more second sub-areas (36) which is lower than 50% of the intensity in the one or more first sub-areas (34). A method of fabricating such a VCSEL is described as well.

4. 发明公开

EP4092848A1 DENSELY PACKED VCSEL ARRAY 审中-实审
公开(公告)号：EP4092848A1
公开(公告)日：2022-11-23
申请号：EP21175109.4
申请日：2021-05-20
申请人： TRUMPF Photonic Components GmbH
发明人： WEIGL, Alexander , PRUIJMBOOM, Armand
IPC分类号： H01S5/183 , H01S5/42
摘要： The present disclosure relates to the field of Vertical Cavity Surface Emitting Lasers (VCSELs) and in particular to a semiconductor device (1) comprising an array of vertical cavity surface emitting lasers (10, 11, 12, 13), VCSELs, wherein the semiconductor device comprises::a first VCSEL (10) having a first active area (20); a second VCSEL (11) having a second active area (21); a bridge ((31, 31') connecting the first VCSEL and the second VCSEL; wherein the first active area of the first VCSEL and the second active area of the second VCSEL are arranged along a first crystal axis (2); and a blocking structure (41) arranged between the first VCSEL (10) and the second VCSEL (11), wherein the blocking structure is adapted to block a propagation of a defect between the first VCSEL and the second VCSEL along the first crystal axis (2).

5. 发明公开

EP3815203A1 VCSEL ARRAY WITH SMALL PULSE DELAY 审中-公开
公开(公告)号：EP3815203A1
公开(公告)日：2021-05-05
申请号：EP19730787.9
申请日：2019-06-17
申请人： TRUMPF Photonic Components GmbH
发明人： WEIGL, Alexander , GRONENBORN, Stephan , MOENCH, Holger Joachim
IPC分类号： H01S5/022 , H01S5/026 , H01S5/042 , H01S5/42 , G01S17/89 , G01S7/481 , H01S5/02 , H01S5/062 , H01S5/183

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