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1. 发明专利

DE112004000021T5 未知
公开(公告)号：DE112004000021T5
公开(公告)日：2005-07-28
申请号：DE112004000021
申请日：2004-05-19
申请人： TOKYO OHKA KOGYO CO LTD
发明人： MARUYAMA KENJI , KURIHARA MASAKI , MIYAGI KEN , NIIKURA SATOSHI , SHIMATANI SATOSHI , MASUJIMA MASAHIRO , NITTA KAZUYUKI , YAMAGUCHI TOSHIHIRO , DOI KOUSUKE
IPC分类号： G03C1/492 , G03F7/039
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.

2. 发明专利

AU2002354158A1 METHOD FOR FORMING FINE RESIST PATTERN 未知
公开(公告)号：AU2002354158A1
公开(公告)日：2003-06-17
申请号：AU2002354158
申请日：2002-12-02
申请人： TOKYO OHKA KOGYO CO LTD
发明人： NITTA KAZUYUKI , SHIMATANI SATOSHI , MASUJIMA MASAHIRO
IPC分类号： G03F7/004 , G03F7/027 , G03F7/039 , G03F7/40 , H01L21/027
摘要： The object is to form a resist pattern to be applicable to a thermal flow process with a small changing amount of the resist pattern size per unit temperature, high uniformity within the plane of the resist hole pattern size obtained and an excellent cross sectional profile. In a resist pattern forming method by subjecting a patterned positive-working resist film provided on a substrate to a thermal flow treatment to effect size reduction, it is characterized in (a) that, as the positive-working resist composition to be used, a positive-working resist composition is used which comprises (A) a resinous ingredient capable of being imparted with increased solubility in alkali by an acid, (B) a compound generating an acid by irradiation with a radiation, (C) a compound having at least two vinyl ether groups per molecule to form crosslinks by reacting with the resinous ingredient (A) under heating and (D) an organic amine compound and (b) that the aforemen-tioned thermal flow treatment is conducted by twice or more of heatings within a temperature range of 100-200° C. wherein the temperature of subsequent heating is not lower than the temperature in the preceding heating.

3. 发明公开

EP3246956A4 DEEP ULTRAVIOLET LED AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：EP3246956A4
公开(公告)日：2018-05-23
申请号：EP15877887
申请日：2015-07-29
申请人： MARUBUN CO LTD , TOSHIBA MACHINE CO LTD , RIKEN , ULVAC INC , TOKYO OHKA KOGYO CO LTD
发明人： KASHIMA YUKIO , MATSUURA ERIKO , KOKUBO MITSUNORI , TASHIRO TAKAHARU , OOKAWA TAKAFUMI , HIRAYAMA HIDEKI , MAEDA NORITOSHI , JO MASAFUMI , KAMIMURA RYUICHIRO , OSADA YAMATO , SHIMATANI SATOSHI
IPC分类号： H01L33/10 , H01L33/22 , H01L33/32 , H01L33/40
CPC分类号： H01L33/405 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/52 , H01L2933/0016 , H01L2933/005 , H01L2933/0058 , H01L2933/0083
摘要： Provided is a deep ultraviolet LED with a design wavelength », including an Al reflecting electrode layer, an ultrathin metal layer, and a transparent p-AlGaN contact layer that are sequentially arranged from a side opposite to a substrate, and a photonic crystal periodic structure provided in the range of the thickness direction of the transparent p-AlGaN contact layer. The photonic crystal periodic structure has a photonic band gap.

4. 发明公开

EP2955762A4 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD 有权转让
标题翻译： HERSTELLUNGSVERFAHREN公司的HILLBLEITERELEMENT
公开(公告)号：EP2955762A4
公开(公告)日：2016-01-20
申请号：EP14826471
申请日：2014-07-16
申请人： MARUBUN CO LTD , TOSHIBA MACHINE CO LTD , RIKEN , NAT INST OF ADVANCED IND SCIEN , ULVAC INC , TOKYO OHKA KOGYO CO LTD
发明人： KASHIMA YUKIO , MATSUURA ERIKO , KOKUBO MITSUNORI , TASHIRO TAKAHARU , OOKAWA TAKAFUMI , HIRAYAMA HIDEKI , YOUN SUNG WON , TAKAGI HIDEKI , KAMIMURA RYUICHIRO , OSADA YAMATO , SHIMATANI SATOSHI
IPC分类号： H01L33/22
CPC分类号： G06F17/5009 , G06F17/10 , H01L33/22 , H01L33/24 , H01L33/44 , H01L33/502 , H01L2933/0083
摘要： A semiconductor light emitting element with a design wavelength of », comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength » satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength » becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.
摘要翻译：具有设计波长»的半导体发光元件，包括在形成发光元件的层之间的一个或多个界面的每一个处具有两个具有不同折射率的结构的光子晶体周期性结构。作为一个或多个周期结构和设计波长中的每一个的参数的周期a和半径R满足布拉格条件。周期a和半径R之间的比率（R / a）是确定的，使得对于每个周期性结构，TE光的预定光子带隙（PBG）变得最大。确定每个周期结构的参数，使得整个半导体发光元件相对于波长λ的光的光提取效率变得最大，作为使用FDTD方法进行模拟分析的结果，使用作为变量的深度h 大于或等于0.5a的周期性结构以及针对布拉格条件的每个阶m确定的周期a和半径R.

5. 发明公开

EP1400853A4 POSITIVE RESIST COMPOSITION OF CHEMICAL AMPLIFICATION TYPE, RESIST COATED MATERIAL, METHOD OF FORMING RESIST PATTERN, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：正性光刻胶化学放大类型的组合物，抗材料覆盖，形成方法抗蚀剂结构和工艺的半导体元件
公开(公告)号：EP1400853A4
公开(公告)日：2007-09-12
申请号：EP02743758
申请日：2002-06-28
申请人： TOKYO OHKA KOGYO CO LTD
发明人： NITTA KAZUYUKI , MIMURA TAKEYOSHI , SHIMATANI SATOSHI , OKUBO WAKI , MATSUMI TATSUYA
IPC分类号： G03F7/039 , G03F7/11 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/11 , Y10S430/106
摘要： A resist composition which comprises (A) a polyhydroxystyrene in which at least part of the hydrogen atoms of the hydroxy groups have been replaced with acid−dissociating dissolution−inhibitive groups and which comes to have enhanced solubility in alkaline solutions when the acid−dissociating dissolution−inhibitive groups are eliminated by the action of an acid and (B) an ingredient which generates an acid upon irradiation with a radiation, wherein in a dissociation test with hydrochloric acid, the proportion of the acid−dissociating dissolution−inhibitive groups of the ingredient (A) which remain after the dissociation is 40% or less; and a positive resist composition of the chemical amplification type which is the same as the above composition except that a polyhydroxystyrene in which at least part of the hydrogen atoms of the hydroxy groups have been replaced with lower (linear or branched alkoxy)alkyl groups and which comes to have enhanced solubility in alkaline solutions when the lower alkoxyalkyl groups are eliminated by the action of an acid is used in place of the ingredient (A).

6. 发明公开

EP2942818A4 DEEP ULTRAVIOLET LED AND METHOD FOR MANUFACTURING SAME 有权转让
标题翻译： TIEFULTRAVIOLETT-LED UND VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP2942818A4
公开(公告)日：2015-11-25
申请号：EP14841324
申请日：2014-10-24
申请人： MARUBUN CO LTD , TOSHIBA MACHINE CO LTD , RIKEN , ULVAC INC , TOKYO OHKA KOGYO CO LTD
发明人： KASHIMA YUKIO , MATSUURA ERIKO , KOKUBO MITSUNORI , TASHIRO TAKAHARU , OOKAWA TAKAFUMI , HIRAYAMA HIDEKI , KAMIMURA RYUICHIRO , OSADA YAMATO , SHIMATANI SATOSHI
IPC分类号： H01L33/10 , H01L33/32
CPC分类号： H01L33/10 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/32 , H01L33/405
摘要： A deep ultraviolet LED with a design wavelength of » is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of »; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.
摘要翻译：提供了一种设计波长为»的深紫外LED，其包括从与衬底相对的一侧依次层叠的反射电极层，金属层，p型GaN接触层和p型AlGaN层， p型AlGaN层对波长为λ的光是透明的; 以及穿透至少p型GaN接触层和p型AlGaN层的光子晶体周期结构。光子晶体周期结构具有光子带隙。

7. 发明专利

JP2011257635A Photosensitive composition for forming insulating film 审中-公开
标题翻译：用于形成绝缘膜的感光性组合物
公开(公告)号：JP2011257635A
公开(公告)日：2011-12-22
申请号：JP2010132960
申请日：2010-06-10
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： MASUJIMA MASAHIRO , ISHIKAWA KIYOSHI , SHIMATANI SATOSHI
IPC分类号： G03F7/075 , C08G77/16 , C08K5/17 , C08K5/42 , C08L83/06 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photosensitive composition for forming an insulating film which is capable of reducing a dielectric constant of a formed insulating film.SOLUTION: A photosensitive composition for forming an insulating film, which comprises a silsesquioxane resin(A) having a structural unit(a1) represented by the following general formula(I) and a structural unit(a2) represented by the following general formula(II), an acid generator component(B) that generates an acid by exposure, and a crosslinker component(C), is used. In the following general formula(I), Ris an alkylene group having 1-5 carbon atoms, and n is an integer of 1-5. In the following general formula(II), Ris an alkyl group having 1-10 carbon atoms.
摘要翻译：解决的问题：提供能够降低所形成的绝缘膜的介电常数的用于形成绝缘膜的感光性组合物。解决方案：一种用于形成绝缘膜的感光组合物，其包含具有由以下通式（I）表示的结构单元（a1）和由以下通式表示的结构单元（a2）的倍半硅氧烷树脂（A）使用式（II），通过曝光产生酸的酸发生剂成分（B）和交联剂成分（C）。在下列通式（I）中，R 1是具有1-5个碳原子的亚烷基，n是1-5的整数。在下列通式（II）中，R 1是具有1-10个碳原子的烷基。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2009013354A Paste composition and plasma display 审中-公开
标题翻译：涂料组合物和等离子体显示
公开(公告)号：JP2009013354A
公开(公告)日：2009-01-22
申请号：JP2007179075
申请日：2007-07-06
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： INOUE TOMOYUKI , ONO TAKASHI , SHIMATANI SATOSHI , MAEDA MASATOSHI
IPC分类号： C08L33/04 , C08K3/00 , C08L1/00 , H01J11/22 , H01J11/24 , H01J11/34 , H01J11/38
摘要： PROBLEM TO BE SOLVED: To provide a paste composition which enables the occurrence of bubbles to be suppressed and a dielectric layer excellently covering metal containing copper to be formed.
SOLUTION: The paste composition contains a binder resin, a solvent containing at least one kind of monocyclic monoterpene or its hydrogenated product and an inorganic powder and is used for covering the metal containing copper. The binder resin contains an acrylic resin and a cellulose based resin.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制气泡的发生的糊剂组合物和能够形成优异地覆盖含铜的金属的电介质层。解决方案：糊料组合物含有粘合剂树脂，含有至少一种单环单萜或其氢化产物的溶剂和无机粉末，并用于覆盖含铜金属。粘合剂树脂含有丙烯酸树脂和纤维素类树脂。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2003167357A FINE RESIST PATTERN FORMING METHOD 审中-公开
公开(公告)号：JP2003167357A
公开(公告)日：2003-06-13
申请号：JP2001369110
申请日：2001-12-03
申请人： TOKYO OHKA KOGYO CO LTD
发明人： NITTA KAZUYUKI , SHIMATANI SATOSHI , MASUJIMA MASAHIRO
IPC分类号： G03F7/004 , G03F7/027 , G03F7/039 , G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a resist pattern with a small variation of resist pattern size per unit temperature suitable for a thermal flow process, high intrasurface uniformity in the resulting resist hole pattern size and excellent section shape. SOLUTION: In a resist pattern forming method in which a resist pattern formed by applying selective exposing and developing consecutively to a positive resist film disposed on a substrate, is subjected to the thermal flow treatment to reduce the pattern size, (a) the positive resist comprises a positive resist composition comprising (A) a resin component having alkali solubility increased by an acid, (B) a compound which generates an acid upon irradiation with a radiation, (C) a compound having at least two vinyl ether groups which react with the resin component (A) upon heating to form cross-linkage and (D) an organic amine and (b) the thermal flow treatment is carried out by heating the resist pattern two or more times within the temperature range of 100-200° and the latter heating temperature is made equal to or higher than the former heating temperature. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2003015295A Resist pattern forming material 有权
标题翻译：电阻形成材料
公开(公告)号：JP2003015295A
公开(公告)日：2003-01-15
申请号：JP2001196069
申请日：2001-06-28
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NITTA KAZUYUKI , MIMURA TAKEYOSHI , SHIMATANI SATOSHI , OKUBO KAZUYOSHI , MATSUUMI TATSUYA
IPC分类号： G03F7/039 , G03F7/004 , G03F7/11 , H01L21/027 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern forming material capable of giving a high resolution resist pattern adaptable to a fine pattern which is required when a semiconductor device is manufactured by a via first dual damascene method and producing no resist residue.
SOLUTION: In the resist pattern forming material obtained by disposing a coating layer of a chemical amplification type positive type resist composition containing (A) a polyhydroxystyrene having acid dissociable dissolution inhibiting groups substituted for at least part of the hydrogen atoms of hydroxyl groups and (B) a compound which generates an acid when irradiated with radiation on a substrate on which a first interlayer insulation layer, an etching stopper layer and a second interlayer insulation layer have been stacked in order, the component (A) has ≤40% remaining rate of the acid dissociable dissolution inhibiting groups after a dissociation test with hydrochloric acid.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种抗蚀剂图案形成材料，其能够提供适用于当通过第一双镶嵌方法制造半导体器件并且不产生抗蚀剂残留物时所需的精细图案的高分辨率抗蚀剂图案。解决方案：在通过设置化学放大型正型抗蚀剂组合物的涂层获得的抗蚀剂图案形成材料中，所述抗蚀剂图案形成材料包含（A）具有取代羟基的至少一部分氢原子的酸解离溶解抑制基团的聚羟基苯乙烯和（B ）在依次层叠有第一层间绝缘层，蚀刻停止层和第二层间绝缘层的基板上照射辐射时产生酸的化合物，成分（A）的残留率为40％的盐酸解离试验后的酸解离溶解抑制基团。

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