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1. 发明授权

US07115487B2 Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit 有权
公开(公告)号：US07115487B2
公开(公告)日：2006-10-03
申请号：US10156124
申请日：2002-05-29
申请人： Hideya Kumomi , Hidemasa Mizutani , Shigeki Kondo
发明人： Hideya Kumomi , Hidemasa Mizutani , Shigeki Kondo
IPC分类号： H01L21/205
CPC分类号： H01L21/02667 , C23C26/02 , C30B13/22 , C30B29/06 , H01L21/02686 , H01L21/2022
摘要： A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number concentration of crystal grains or crystalline clusters different from that of the surrounding region. In the process of melting and resolidification, the crystal grain grows preferentially in the one region to control the location of the crystal grain in the crystalline thin film.

2. 发明授权

US5043785A Photosensor device photodiode and switch 失效
标题翻译：光电传感器光电二极管和开关
公开(公告)号：US5043785A
公开(公告)日：1991-08-27
申请号：US572355
申请日：1990-08-27
申请人： Hidemasa Mizutani , Shigeki Kondo
发明人： Hidemasa Mizutani , Shigeki Kondo
IPC分类号： G01P1/04 , C04B41/89 , H01L27/14 , H01L29/80 , H01L31/0368 , H01L31/06 , H01L31/101
CPC分类号： H01L31/03682 , H01L31/101 , Y02E10/546
摘要： A photosensor device having a semiconductor layer disposed on a substrate. The semiconductor layer includes a lateral photosensor having a semiconductor junction arranged in a serpentine configuration and a lateral read-out switch. The lateral read-out switch and the lateral photosensor are formed on the semiconductor layer. The lateral photosensor has an area of a first conductivity type semiconductor and an area of a second conductivity type semiconductor. The lateral read-out switch includes an area of the first conductivity type and an area of the second conductivity type. The lateral photosensor and the lateral read-out switch are laterally adjacent, and substantially coplanar on the substrate.
摘要翻译：一种光传感器装置，包括形成在绝缘衬底上的半导体层，其由另一导电类型的一种导电型或本征型的第一半导体区域（例如3,13）和第二半导体区域（例如4,24,14）组成。水平型光电传感器由所述第一半导体区域和第二半导体区域之间的结形成，而构成传感器信号的处理电路的场效应晶体管同时形成有由所述第二半导体区域组成的源极和漏极（例如14，并且具有由位于所述源极和漏极之间的所述第一半导体区域（例如13）组成的沟道区域。

3. 发明申请

US20060028133A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20060028133A1
公开(公告)日：2006-02-09
申请号：US10530896
申请日：2003-10-09
申请人： Shigeki Kondo , Hidemasa Mizutani , Masahiro Fushimi , Seishi Miura , Takashi Moriyama
发明人： Shigeki Kondo , Hidemasa Mizutani , Masahiro Fushimi , Seishi Miura , Takashi Moriyama
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H01L27/3258 , H01L27/3246 , H01L51/5253 , H05B33/04
摘要： In a display device having a display region formed by disposing a plurality of organic light emitting elements such as organic EL elements, it becomes possible to prevent penetration of water into the display region to suppress degradation in display characteristics even during drive over a long period of time and to improve long-term reliability. There is provided a display device comprising a display region 120 having a plurality of organic light emitting elements disposed on a substrate 101, each of the plurality of organic light emitting elements having an organic layer 103 comprising a light emitting layer interposed between an anode and a cathode (102, 104), wherein the display region 120 is formed on a first insulating protective layer 106 provided on the substrate 101, and a surface on a side opposite to a substrate 101 side and an entire periphery of the display region 120 are covered with an insulating protective film 107.
摘要翻译：在具有通过设置诸如有机EL元件的多个有机发光元件形成的显示区域的显示装置中，可以防止水渗透到显示区域，从而即使在长时间的驱动中也能够抑制显示特性的劣化时间和提高长期可靠性。提供了一种显示装置，其包括具有设置在基板101上的多个有机发光元件的显示区域120，所述多个有机发光元件中的每一个具有有机层103，所述有机层103包括介于阳极和阳极之间的发光层阴极（102,104），其中显示区域120形成在设置在基板101上的第一绝缘保护层106上，并且覆盖与显示区域120的基板101侧和整个周边相反的一侧的表面具有绝缘保护膜107。

4. 发明授权

US5106765A Process for making a BiMOS 失效
标题翻译：制作BIMOS的过程
公开(公告)号：US5106765A
公开(公告)日：1992-04-21
申请号：US501968
申请日：1990-03-29
申请人： Hidemasa Mizutani , Shigeki Kondo
发明人： Hidemasa Mizutani , Shigeki Kondo
IPC分类号： H01L21/8249 , H01L27/02 , H01L27/14
CPC分类号： H01L21/8249 , Y10S148/009
摘要： A process for producing a semiconductor device provided with a bipolar transistor and a gate-insulated transistor in which a bipolar semiconductor domain is formed on a semiconductor layer of a first conductivity type. An oxide layer is formed on the bipolar semiconductor domain and on the remaining semiconductor layer. The oxide layer is selectively removed to form an aperture in an area at least on the semiconductor domain, and an emitter domain is formed on the bipolar semiconductor domain. Plural polysilicon layers, each having an impurity of the first conductivity type, are formed on the aperture and on the oxide layer as a gate electrode of the gate-insulated transistor. The impurity of the first conductivity type from the polysilicon layers on the aperture is diffused by thermal oxidation into the bipolar semiconductor domain to form an emitter domain of the first conductivity type, and to form and develop thermal oxide layers at least on the upper and lateral faces of the polysillicon layers constituting the gate electrode. Ions of an impurity of the opposite conductivity type are implanted to form source and drain domains of the gate-insulated transistor by a thermal treatment, utilizing the polysilicon layers constituting the gate electrode and the thermal oxide layers as masks. A photosensor is formed in the semiconductor substrate having at least a photoreceiving element being separated from other semiconductor elements by an isolation region separating domain composed of a semiconductor of the first conductivity type.
摘要翻译：一种制造半导体器件的方法，该半导体器件设置有在第一导电类型的半导体层上形成双极半导体域的双极晶体管和栅极绝缘晶体管。在双极半导体领域和剩余的半导体层上形成氧化物层。选择性地去除氧化物层以在至少在半导体域上的区域中形成孔，并且在双极半导体域上形成发射极域。作为栅极绝缘晶体管的栅电极，在孔和氧化物层上形成具有第一导电类型的杂质的多个多晶硅层。来自孔上的多晶硅层的第一导电类型的杂质通过热氧化扩散到双极半导体区域中，以形成第一导电类型的发射极域，并且至少在上部和外侧形成和显影热氧化物层构成栅电极的多晶硅层的面。通过热处理，通过利用构成栅极电极和热氧化物层的多晶硅层作为掩模，注入相反导电类型杂质的离子以形成栅极绝缘晶体管的源极和漏极区域。在半导体衬底中形成光电传感器，该至少一个光接收元件通过由第一导电类型的半导体构成的隔离区分离区域与其它半导体元件分离。

5. 发明授权

US5087296A Solar battery and process for preparing same 失效
标题翻译：太阳能电池及其制备方法
公开(公告)号：US5087296A
公开(公告)日：1992-02-11
申请号：US610310
申请日：1990-11-08
申请人： Shigeki Kondo , Hidemasa Mizutani
发明人： Shigeki Kondo , Hidemasa Mizutani
IPC分类号： H01L31/04 , H01L21/20 , H01L21/205 , H01L31/0368 , H01L31/18
CPC分类号： H01L31/03682 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L31/1804 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S117/913 , Y10S148/122 , Y10S148/152
摘要： A solar battery comprises a substrate, a first semiconductor layer of a first conduction type comprising a single crystal singly grown on a nucleation surface (S.sub.NDL) formed on the surface of said substrate as the base for growing, said nucleation surface (S.sub.NDL) being comprised of a material which is sufficiently greater in nucleation density (ND) than the material constituting the surface of said substrate and having a sufficiently fine area such that only a single nucleus grows, a second semiconductor layer of a second conduction type different than the conduction type of said first semiconductor layer and means for taking out the power.

6. 发明授权

US07321194B2 Display device with protective film over display region 有权
标题翻译：在显示区域的显示设备与保护膜
公开(公告)号：US07321194B2
公开(公告)日：2008-01-22
申请号：US10530896
申请日：2003-10-09
申请人： Shigeki Kondo , Hidemasa Mizutani , Masahiro Fushimi , Seishi Miura , Takashi Moriyama
发明人： Shigeki Kondo , Hidemasa Mizutani , Masahiro Fushimi , Seishi Miura , Takashi Moriyama
IPC分类号： H05B33/00
CPC分类号： H01L27/3258 , H01L27/3246 , H01L51/5253 , H05B33/04
摘要： In a display device having a display region formed by disposing a plurality of organic light emitting elements such as organic EL elements, it becomes possible to prevent penetration of water into the display region to suppress degradation in display characteristics even during drive over a long period of time and to improve long-term reliability. There is provided a display device comprising a display region (120) having a plurality of organic light emitting elements disposed on a substrate (101), each of the plurality of organic light emitting elements having an organic layer (103 comprising a light emitting layer interposed between an anode and a cathode (102, 104), wherein the display region (120) is formed on a first insulating protective layer (106) provided on the substrate (101), and a surface on a side opposite to a substrate (101) side and an entire periphery of the display region (120) are covered with an insulating protective film (107).
摘要翻译：在具有通过设置诸如有机EL元件的多个有机发光元件形成的显示区域的显示装置中，可以防止水渗透到显示区域，从而即使在长时间的驱动中也能够抑制显示特性的劣化时间和提高长期可靠性。提供了一种显示装置，其包括具有设置在基板（101）上的多个有机发光元件的显示区域（120），所述多个有机发光元件中的每一个具有有机层（103包括插入了发光层的发光层在阳极和阴极（102,104）之间，其中显示区域（120）形成在设置在基板（101）上的第一绝缘保护层（106）上，以及与基板（101）相对的一侧的表面）侧和显示区域（120）的整个周边被绝缘保护膜（107）覆盖。

7. 发明授权

US07508127B2 Multicolor light-emitting device 有权
标题翻译：多色发光装置
公开(公告)号：US07508127B2
公开(公告)日：2009-03-24
申请号：US10529281
申请日：2003-10-06
申请人： Seishi Miura , Hidemasa Mizutani , Shigeki Kondo , Masahiro Fushimi , Takashi Moriyama
发明人： Seishi Miura , Hidemasa Mizutani , Shigeki Kondo , Masahiro Fushimi , Takashi Moriyama
IPC分类号： H01J1/62
CPC分类号： H05B33/14 , H01L27/3211 , H01L51/0052 , H01L51/0059 , H01L51/0062 , H01L51/0081 , H01L51/0085 , H01L51/5262 , H01L2251/558
摘要： A multicolor light-emitting device includes a plurality of organic EL devices each having two or more different luminescent colors. The multicolor light-emitting device includes a plurality of organic EL devices each having an organic compound layer including a light-emitting layer 12 between a reflecting electrode 11 and a transparent electrode 14. The plurality of organic EL devices each has two or more different emission spectra, wherein light-emitting regions in the light-emitting layer of the organic EL devices each having different emission spectra are located in different positions in the layer thickness direction corresponding to the different emission spectra.
摘要翻译：多色发光器件包括多个具有两种或更多种不同发光颜色的有机EL器件。多色发光装置包括多个有机EL器件，每个有机EL器件具有在反射电极11和透明电极14之间包含发光层12的有机化合物层。多个有机EL器件各自具有两个或更多个不同的发光光谱，其中各有不同发射光谱的有机EL器件的发光层中的发光区域位于与不同发射光谱对应的层厚度方向上的不同位置。

8. 发明授权

US5488251A Semiconductor device and process for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5488251A
公开(公告)日：1996-01-30
申请号：US285765
申请日：1994-08-03
申请人： Hidemasa Mizutani , Shigeki Kondo
发明人： Hidemasa Mizutani , Shigeki Kondo
IPC分类号： H01L21/8249 , H01L27/02 , H01L27/14
CPC分类号： H01L21/8249 , Y10S148/009
摘要： A photosensor includes a semiconductor substrate of a first-conductivity type with a photoelectric conversion element such as photodiode thereon. The photodiode has a second, opposite conductivity and is surrounded at all of the bottom and sides by a domain having the second conductivity and a high impurity concentration. A first-conductivity domains forms a junction with the second-conductivity domain, and the photodiode is separated from other semiconductor elements by a first-conductivity domain.
摘要翻译：光传感器包括具有光电转换元件的第一导电类型的半导体衬底，其上具有光电二极管。光电二极管具有第二相反的导电性，并且在所有底部和侧面都被具有第二导电性和高杂质浓度的畴包围。第一导电畴与第二导电畴形成结，并且光电二极管通过第一导电畴与其它半导体元件分离。

9. 发明授权

US5061978A Semiconductor photosensing device with light shield 失效
标题翻译：半导体光敏器件带防护罩
公开(公告)号：US5061978A
公开(公告)日：1991-10-29
申请号：US496092
申请日：1990-03-15
申请人： Hidemasa Mizutani , Shigeki Kondo
发明人： Hidemasa Mizutani , Shigeki Kondo
IPC分类号： H01L23/552 , H01L27/144 , H01L31/0216
CPC分类号： H01L23/552 , H01L27/1443 , H01L31/02164 , H01L2924/0002
摘要： A semiconductor device having a circuit portion formed on a substrate, a light shielding layer for shielding the circuit portion from light, stacked on the substrate with an insulation layer being interleaved therebetween, and means for shielding the circuit portion from obliquely impinging light.
摘要翻译：一种半导体器件，具有形成在基板上的电路部分，用于屏蔽电路部分的光的遮光层，堆叠在基板上，绝缘层彼此交错;以及用于屏蔽电路部分以防止倾斜的光照射的装置。

10. 发明授权

US07342560B2 Voltage current conversion device and light emitting device 失效
标题翻译：电压电流转换装置和发光装置
公开(公告)号：US07342560B2
公开(公告)日：2008-03-11
申请号：US11092858
申请日：2005-03-30
申请人： Osamu Yuki , Shigeki Kondo , Yoshinori Nakajima
发明人： Osamu Yuki , Shigeki Kondo , Yoshinori Nakajima
IPC分类号： G09G3/32 , G09G3/30
CPC分类号： G05F1/561
摘要： In case an input voltage is zero, to sufficiently shut off an output current, a source side of a first transistor T1 is connected to the drains of fourth and fifth transistors T4 and T5, and during a self-bias period of the first transistor T1, a source of the first transistor T1 is made a second potential through the fourth transistor T4, and in a gate potential setting period of the first transistor T1 by an input voltage Vin after the completion of the self-bias period, the source of the first transistor T1 is made a third potential through the fifth transistor T5.
摘要翻译：在输入电压为零的情况下，为了充分切断输出电流，第一晶体管T 1的源极侧连接到第四和第五晶体管T 4和T 5的漏极，并且在第第一晶体管T1，第一晶体管T1的源极通过第四晶体管T 4形成第二电位，并且在第一晶体管T1的栅极电位设定周期中，在第一晶体管T1的栅极电位设定周期中，通过输入电压Vin，第一晶体管T 1的源极通过第五晶体管T 5成为第三电位。

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