专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

AU2006242030A1 Solar cell manufacturing method, solar cell, and semiconductor device manufacturing method 未知
公开(公告)号：AU2006242030A1
公开(公告)日：2006-11-09
申请号：AU2006242030
申请日：2006-04-11
申请人： SHINETSU CHEMICAL CO , SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD
发明人： WATABE TAKENORI , OHTSUKA HIROYUKI , ISHIKAWA NAOKI , AKATSUKA TAKESHI , ONISHI TSUTOMU , TAKAHASHI MASATOSHI , OJIMA SATOYUKI , SAISU SHIGENORI , UEGURI TOYOHIRO
IPC分类号： H01L31/04
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

2. 发明专利

ES2764073T3 Método de fabricación de célula solar 未知
公开(公告)号：ES2764073T3
公开(公告)日：2020-06-02
申请号：ES06731542
申请日：2006-04-11
申请人： SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD , SHINETSU CHEMICAL CO
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHIGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L31/0224 , H01L21/225 , H01L31/04 , H01L31/06 , H01L31/068 , H01L31/18
摘要： Un método de fabricación de una célula solar (100) formando una unión p-n en un sustrato semiconductor (1) que tiene un primer tipo de conductividad, en el que, al menos: un primer material de recubrimiento (8) que contiene un dopante del segundo tipo de conductividad y un agente para impedir que se disperse un dopante, incluyendo dicho agente un compuesto de silicio, está recubierto sobre el sustrato semiconductor que tiene el primer tipo de conductividad mediante serigrafía, y un segundo material de recubrimiento (9) que contiene un dopante del segundo tipo de conductividad está recubierto sobre el sustrato semiconductor que tiene el primer tipo de conductividad y el primer material de recubrimiento mediante recubrimiento por centrifugación, de modo que el segundo material de recubrimiento puede entrar en contacto con al menos el primer material de recubrimiento; y, una primera capa de difusión (2) formada recubriendo el primer material de recubrimiento, y una segunda capa de difusión (3) formada recubriendo el segundo material de recubrimiento, teniendo la segunda capa de difusión una conductividad inferior a la de la primera capa de difusión, se forman simultáneamente mediante un tratamiento térmico de difusión que da como resultado la formación de dicha unión p-n, en el que, además: el primer material de recubrimiento y el segundo material de recubrimiento difieren entre sí en cualquiera de al menos, el porcentaje de un contenido de dopante, una viscosidad, el contenido del agente para impedir que se disperse un dopante y un agente para impedir autodopaje, incluyendo dicho agente un compuesto de silicio, un tipo de dopante y/o grosores de película de recubrimiento del primer material de recubrimiento y el segundo material de recubrimiento durante el recubrimiento; y en el que el porcentaje del contenido de dopante del primer material de recubrimiento es 4 o más veces mayor que el porcentaje del contenido de dopante del segundo material de recubrimiento.

3. 发明公开

EP1876651A4 SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权转让
标题翻译：太阳能电池制造方法，太阳能电池及其制造方法半导体元件
公开(公告)号：EP1876651A4
公开(公告)日：2013-09-11
申请号：EP06731542
申请日：2006-04-11
申请人： SHINETSU HANDOTAI KK , NAOETSU ELECTRONICS CO LTD , SHINETSU CHEMICAL CO
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHIGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L31/04 , H01L21/225 , H01L31/06 , H01L31/18
CPC分类号： H01L21/2254 , H01L31/022425 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

4. 发明公开

EP1835548A4 BACK JUNCTION SOLAR CELL AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：后面结太阳能电池和制造工艺FOR THEIR
公开(公告)号：EP1835548A4
公开(公告)日：2010-12-01
申请号：EP05795521
申请日：2005-10-21
申请人： NAOETSU ELECTRONICS CO LTD , SHINETSU CHEMICAL CO
发明人： ONISHI TSUTOMU , AKATSUKA TAKESHI , IGARASHI SHUNICHI
IPC分类号： H01L31/068
CPC分类号： H01L31/03529 , H01L31/022441 , H01L31/0682 , Y02E10/547

5. 发明专利

NO20076104L 未知
公开(公告)号：NO20076104L
公开(公告)日：2008-01-25
申请号：NO20076104
申请日：2007-11-26
申请人： NAOETSU ELECTRONICS CO LTD
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHINGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L21/225 , H01L31/18
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

6. 发明专利

NO20076104A 未知
公开(公告)号：NO20076104A
公开(公告)日：2008-01-25
申请号：NO20076104
申请日：2007-11-26
申请人： NAOETSU ELECTRONICS CO LTD
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHINGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L21/225 , H01L31/18
CPC分类号： H01L21/2254 , H01L31/022425 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521

7. 发明专利

JP2009087957A Solar battery 审中-公开
标题翻译：太阳能电池
公开(公告)号：JP2009087957A
公开(公告)日：2009-04-23
申请号：JP2005378053
申请日：2005-12-28
申请人： Naoetsu Electronics Co Ltd , Shin Etsu Chem Co Ltd , 信越化学工業株式会社 , 直江津電子工業株式会社
发明人： AKATSUKA TAKESHI , IGARASHI SHUNICHI
IPC分类号： H01L31/04
CPC分类号： H01L31/022425 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To restrain the occurrence of spikes, and to improve the conversion efficiency of a cell further. SOLUTION: When a conductive paste 3 to which an aluminum-silicon alloy has been added in advance is used in silicon in a semiconductor substrate 1, a eutectic mixture of aluminum with silicon is not newly formed in heat treatment and, consequently, a local deeply penetrated part is not formed under an electrode 4. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题：为了抑制尖峰的发生，进一步提高电池的转换效率。解决方案：当在半导体衬底1中的硅中使用预先添加了铝 - 硅合金的导电膏3时，在热处理中不新形成铝与硅的共晶混合物，因此，在电极4下方没有形成局部深入部分。版权所有：（C）2009，JPO＆INPIT

8. 发明专利

JP2008204967A Solar cell element and method for fabricating the same 审中-公开
标题翻译：太阳能电池元件及其制造方法
公开(公告)号：JP2008204967A
公开(公告)日：2008-09-04
申请号：JP2005159509
申请日：2005-05-31
申请人： Naoetsu Electronics Co Ltd , Shin Etsu Chem Co Ltd , 信越化学工業株式会社 , 直江津電子工業株式会社
发明人： ONISHI TSUTOMU , AKATSUKA TAKESHI , IGARASHI SHUNICHI
IPC分类号： H01L31/04 , H01L21/28 , H01L29/40
CPC分类号： H01L31/02167 , Y02E10/52
摘要： PROBLEM TO BE SOLVED: To provide a solar cell element that can realize BSF effect and passivation effect, using a simple structure. SOLUTION: Since the rear surface side of a semiconductor substrate 1 is covered entirely with a BSF layer 2, only a part of the BSF layer 2 on the rear-surface side is brought into contact with a first rear surface electrode 4; a larger part on the rear-surface side is covered with a passivation film 3, excepting these contact portions 4a; and surface recombination loss is reduced in the great part of the semiconductor substrate 1 on the rear-surface side and the performance of a solar cell is enhanced. Furthermore, when the rear-surface side of the passivation film is covered with a second rear-surface electrode 5 having a resistance lower than that of the first rear surface electrode 4 and the first rear-surface electrode 4 is brought into contact with the second rear-surface electrode 5; power loss due to resistance at the second rear-surface electrode 5, having a resistance lower than that of the first rear-surface electrode 4, is reduced; and moreover light of a long wavelength, arriving at the rear surface from the front surface, is reflected on the second rear surface electrode 5 toward the inside of the semiconductor substrate 1, thus power generation effect is improved. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以实现BSF效应和钝化效果的太阳能电池元件，使用简单的结构。解决方案：由于半导体衬底1的后表面侧全部被BSF层2覆盖，所以后表面侧的仅BSF层2的一部分与第一后表面电极4接触; 除了这些接触部分4a之外，背面侧的较大部分被钝化膜3覆盖。并且在背面侧的半导体衬底1的大部分中表面复合损失减小，并且太阳能电池的性能得到提高。此外，当钝化膜的背面侧被具有比第一后表面电极4的电阻低的第二背面电极5覆盖，并且第一后表面电极4与第二背面电极5接触时背面电极5; 具有比第一背面电极4的电阻低的第二背面电极5的电阻引起的功率损耗减少; 此外，从前表面到达后表面的长波长的光在第二背面电极5上朝向半导体基板1的内部反射，从而提高发电效果。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2010027744A Method for forming diffusion layer on substrate 有权
标题翻译：在基底上形成扩散层的方法
公开(公告)号：JP2010027744A
公开(公告)日：2010-02-04
申请号：JP2008185313
申请日：2008-07-16
申请人： Naoetsu Electronics Co Ltd , Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社 , 直江津電子工業株式会社
发明人： MURAKAMI TAKASHI , AKATSUKA TAKESHI , TSUKIGATA SHINTARO , ISHIKAWA NAOKI , OTSUKA HIROYUKI
IPC分类号： H01L21/223 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To provide a method for forming diffusion layers on substrates for suppressing the variations of sheet resistance values of the substrates where diffusion layers are formed, and of improving yield in solar cell production, even if the number of substrate sheets to be processed for thermal treatment at a time is increased for the purpose of improving productivity of solar cell. SOLUTION: This diffusion layer forming method includes a step to stand a plurality of semiconductor substrates 1 in a traverse boat 2, a step to arrange at least one traverse boat 1 inside a traverse heat treatment furnace 3, a step to form diffusion layers on the substrates by thermal diffusion of impurities, and a step to form PN junctions on the substrates. In this method, when the traverse boat is disposed inside the heat treatment furnace, it is arranged so that the height of a contact position between the substrate and the supporting lower edge surface may gradually make a leaning variation in a longitudinal direction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在基板上形成扩散层的方法，用于抑制形成扩散层的基板的薄层电阻值的变化，并且提高太阳能电池制造的成品率，即使基板数量为了提高太阳能电池的生产率，增加了一次要进行热处理的片材。解决方案：这种扩散层形成方法包括在横动舟皿2中放置多个半导体衬底1的步骤，在横向热处理炉3内布置至少一个横动舟1的步骤，形成扩散的步骤通过杂质的热扩散在衬底上的层，以及在衬底上形成PN结的步骤。在该方法中，当横动舟布置在热处理炉内部时，其布置使得基板和支撑下边缘表面之间的接触位置的高度可以在纵向方向上逐渐地倾斜变化。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2008066316A Backside bonding solar cell, and its fabrication process 审中-公开
标题翻译：背面接合太阳能电池及其制造工艺
公开(公告)号：JP2008066316A
公开(公告)日：2008-03-21
申请号：JP2004376604
申请日：2004-12-27
申请人： Naoetsu Electronics Co Ltd , Shin Etsu Chem Co Ltd , 信越化学工業株式会社 , 直江津電子工業株式会社
发明人： IGARASHI SHUNICHI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L31/04
CPC分类号： H01L31/03529 , H01L31/022441 , H01L31/0682 , Y02E10/547
摘要： PROBLEM TO BE SOLVED: To arrange p + type diffusion layers and n + type diffusion layers finely without bringing into contact with each other. SOLUTION: On the backside 1a of a semiconductor substrate 1, p + type diffusion layers 2 and n + type diffusion layers 3 are formed simultaneously in close proximity to each other, a trench 1b is formed from the backside 1a of the semiconductor substrate 1 toward the boundary where the outer edge portions of the p + type diffusion layers 2 and the n + type diffusion layers 3 come into contact and then the outer edge portions of the p + type diffusion layers 2 and the n + type diffusion layers 3 are separated from each other thus arranging the p + type diffusion layers 2 and the n + type diffusion layers 3 in close proximity to each other on the opposite sides of the trench 1b. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：将p + 型扩散层和n + 型扩散层精细排列而不会彼此接触。解决方案：在半导体衬底1的背面1a上，同时形成p 型扩散层2和n + SP + +型扩散层3 另外，沟槽1b从半导体衬底1的背面1a朝向p + 型扩散层2的外边缘部分和n + / SP>型扩散层2的边界形成。型扩散层3接触，然后p型SP + + SP型扩散层2和n + SP + + / SP型扩散层3的外边缘部分彼此分离，从而布置 p + 型扩散层2和n + / SP>型扩散层3在沟槽1b的相对侧彼此靠近。版权所有（C）2008，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式