专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

NO20076104L 未知
公开(公告)号：NO20076104L
公开(公告)日：2008-01-25
申请号：NO20076104
申请日：2007-11-26
申请人： NAOETSU ELECTRONICS CO LTD
发明人： OHTSUKA HIROYUKI , TAKAHASHI MASATOSHI , ISHIKAWA NAOKI , SAISU SHINGENORI , UEGURI TOYOHIRO , OJIMA SATOYUKI , WATABE TAKENORI , AKATSUKA TAKESHI , ONISHI TSUTOMU
IPC分类号： H01L21/225 , H01L31/18
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

IPRDB

热门服务

关于我们

友情链接

联系方式