专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09209281B2 Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching 有权
标题翻译：通过局部加热一个或多个金属化层并通过选择性蚀刻来制造器件的方法
公开(公告)号：US09209281B2
公开(公告)日：2015-12-08
申请号：US11789045
申请日：2007-04-23
申请人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
发明人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
IPC分类号： H01L29/66 , H01L21/04 , H01L21/3213 , H01L21/268 , H01L29/16
CPC分类号： H01L29/47 , H01L21/0485 , H01L21/0495 , H01L21/268 , H01L21/32134 , H01L23/528 , H01L29/1608 , H01L29/417 , H01L29/41725 , H01L29/42316 , H01L29/6606 , H01L29/66068 , H01L29/66901 , H01L29/66909 , H01L29/808 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.
摘要翻译：一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包含蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层，通过用蚀刻介质蚀刻以形成该器件。

2. 发明申请

US20080258183A1 Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching 有权
标题翻译：通过局部加热一个或多个金属化层并通过选择性蚀刻来制造器件的方法
公开(公告)号：US20080258183A1
公开(公告)日：2008-10-23
申请号：US11789045
申请日：2007-04-23
申请人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
发明人： Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
IPC分类号： H01L29/80 , H01L27/095
CPC分类号： H01L29/47 , H01L21/0485 , H01L21/0495 , H01L21/268 , H01L21/32134 , H01L23/528 , H01L29/1608 , H01L29/417 , H01L29/41725 , H01L29/42316 , H01L29/6606 , H01L29/66068 , H01L29/66901 , H01L29/66909 , H01L29/808 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.
摘要翻译：一种制造器件的方法包括将一个或多个金属化层沉积到衬底上，局部加热所述一个或多个金属化层的区域以获得衬底/金属化层化合物或金属化层化合物，所述化合物包括蚀刻 - 选择性不同于区域外的一个或多个金属化层的蚀刻介质的选择性，以及根据该区域或区域外的蚀刻选择性，去除该区域或区域外的一个或多个金属化层，通过用蚀刻介质蚀刻以形成该器件。

3. 发明授权

US08450196B2 Production of an integrated circuit including electrical contact on SiC 有权
标题翻译：生产包括SiC上电接触的集成电路
公开(公告)号：US08450196B2
公开(公告)日：2013-05-28
申请号：US11924093
申请日：2007-10-25
申请人： Roland Rupp , Thomas Gutt , Michael Treu
发明人： Roland Rupp , Thomas Gutt , Michael Treu
IPC分类号： H01L21/28
CPC分类号： H01L21/0495 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/0485 , H01L21/268 , H01L21/2683 , H01L29/1608 , H01L29/417 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/66143 , H01L29/872
摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.
摘要翻译：公开了一种包括SiC上电接触的集成电路的生产。一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

4. 发明申请

US20080099769A1 PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC 有权
标题翻译：在SiC上生产包括电接触的集成电路
公开(公告)号：US20080099769A1
公开(公告)日：2008-05-01
申请号：US11924093
申请日：2007-10-25
申请人： Roland Rupp , Thomas Gutt , Michael Treu
发明人： Roland Rupp , Thomas Gutt , Michael Treu
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： H01L21/0495 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/0485 , H01L21/268 , H01L21/2683 , H01L29/1608 , H01L29/417 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/66143 , H01L29/872
摘要： Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.
摘要翻译：公开了一种包括SiC上电接触的集成电路的生产。一个实施例提供在SiC衬底上制造电接触，其中通过在SiC衬底上照射和吸收激光脉冲在SiC衬底的边界表面上产生导电接触。

5. 发明申请

US20100264467A1 TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE 有权
标题翻译：具有屏蔽结构的晶体管元件
公开(公告)号：US20100264467A1
公开(公告)日：2010-10-21
申请号：US12426008
申请日：2009-04-17
申请人： Dethard Peters , Peter Friedrichs , Rudolf Elpelt , Larissa Wehrhahn-Kilian , Michael Treu , Roland Rupp
发明人： Dethard Peters , Peter Friedrichs , Rudolf Elpelt , Larissa Wehrhahn-Kilian , Michael Treu , Roland Rupp
IPC分类号： H01L29/812
CPC分类号： H01L29/8083 , H01L29/0657 , H01L29/1066 , H01L29/8122
摘要： A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.
摘要翻译：具有屏蔽结构的晶体管组件。一个实施例提供了源极端子，漏极端子和控制端子。第一导电类型的源极区域连接到源极端子。第一导电类型的漏极区域连接到漏极端子。漂移区设置在源区和排水区之间。提供了结点控制结构，用于控制在漏区和源区之间的漂移区中的接合区，至少包括一个控制区。屏蔽结构布置在结点控制结构和漏区之间的漂移区中，并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。屏蔽区域与屏蔽电位端子相连。所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

6. 发明申请

US20090032848A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20090032848A1
公开(公告)日：2009-02-05
申请号：US11830542
申请日：2007-07-30
申请人： Michael Treu , Roland Rupp , Michael Rueb , Rudolf Elpelt
发明人： Michael Treu , Roland Rupp , Michael Rueb , Rudolf Elpelt
IPC分类号： H01L29/808 , H01L21/266 , H01L21/337
CPC分类号： H01L29/66068 , H01L21/0465 , H01L29/1029 , H01L29/66909 , H01L29/8083
摘要： A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.
摘要翻译：一种半导体器件的制造方法。该方法包括提供导电类型的半导体本体，其中半导体主体包括第一表面。在半导体本体中形成至少一个第二导电类型的掩埋区域，并且至少在第二导电类型的表面区域形成在半导体本体的第一表面处，其中形成掩埋区域和表面区域使得它们彼此间隔开。埋入区域通过深度注入第二导电类型的第一掺杂剂形成。

7. 发明申请

US20080203517A1 SEMICONDUCTOR COMPONENT HAVING RECTIFYING JUNCTIONS AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：具有修整结的半导体元件及其制造方法
公开(公告)号：US20080203517A1
公开(公告)日：2008-08-28
申请号：US12037269
申请日：2008-02-26
申请人： MICHAEL RUEB , Roland Rupp , Michael Treu
发明人： MICHAEL RUEB , Roland Rupp , Michael Treu
IPC分类号： H01L27/06 , H01L21/822
CPC分类号： H01L29/872 , H01L29/08 , H01L29/6609 , H01L29/66143 , H01L29/861
摘要： A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.
摘要翻译：提出了一种半导体元件，其具有半导体本体，其具有第一导电类型的第一半导体区，相对于第一半导体区的至少一个第一整流结，相对于第一半导体区的至少一个第二整流结，其中三个整流接头各自具有不同大小的屏障高度。

8. 发明申请

US20090078971A1 SEMICONDUCTOR DEVICE WITH STRUCTURED CURRENT SPREAD REGION AND METHOD 有权
标题翻译：具有结构化电流传播区域和方法的半导体器件
公开(公告)号：US20090078971A1
公开(公告)日：2009-03-26
申请号：US11858264
申请日：2007-09-20
申请人： Michael Treu , Roland Rupp , Rudolf Elpelt
发明人： Michael Treu , Roland Rupp , Rudolf Elpelt
IPC分类号： H01L29/78 , H01L21/336 , H01L29/808 , H01L21/337
CPC分类号： H01L29/7395 , H01L29/0696 , H01L29/0843 , H01L29/1608 , H01L29/2003 , H01L29/66909 , H01L29/8083
摘要： A semiconductor device with structured current spread region and method is disclosed. One embodiment provides a drift portion of a first conductivity type, a current spread portion of the first conductivity type and first portions of the first conductivity type. The current spread portion and the first portions are arranged in a first plane on the drift portion, wherein the current spread portion surrounds at least partially the first portions. The semiconductor body further includes spaced apart body regions of a second conductivity type which are arranged on the current spread portion. Further, the doping concentration of the current spread portion is higher than the doping concentrations of the drift portion and of the first portions.
摘要翻译：公开了一种具有结构化电流扩展区域和方法的半导体器件。一个实施例提供第一导电类型的漂移部分，第一导电类型的电流扩展部分和第一导电类型的第一部分。电流扩展部分和第一部分布置在漂移部分上的第一平面中，其中电流扩展部分至少部分地围绕第一部分。半导体本体还包括布置在电流扩展部分上的间隔开的第二导电类型的主体区域。此外，电流扩展部分的掺杂浓度高于漂移部分和第一部分的掺杂浓度。

9. 发明申请

US20090068803A1 METHOD FOR MAKING AN INTEGRATED CIRCUIT INCLUDING VERTICAL JUNCTION FIELD EFFECT TRANSISTORS 有权
标题翻译：用于制造集成电路的方法，包括垂直接点场效应晶体管
公开(公告)号：US20090068803A1
公开(公告)日：2009-03-12
申请号：US11852853
申请日：2007-09-10
申请人： Michael Treu , Roland Rupp , Heinz Mitlehner , Rudolf Elpelt , Peter Friedrichs , Larissa Wehrhahn-Kilian
发明人： Michael Treu , Roland Rupp , Heinz Mitlehner , Rudolf Elpelt , Peter Friedrichs , Larissa Wehrhahn-Kilian
IPC分类号： H01L21/337
CPC分类号： H01L29/8083 , H01L29/0692 , H01L29/1066 , H01L29/1608 , H01L29/41766 , H01L29/6606 , H01L29/66909
摘要： A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.
摘要翻译：公开了一种制造包括垂直结型场效应晶体管的集成电路的方法。一个实施例使用容错或对准容限的制造工艺创建垂直结型场效应晶体管。即使在连续的半导体处理步骤中发生未对准，器件性能也不会受到损害。

10. 发明授权

US08102012B2 Transistor component having a shielding structure 有权
标题翻译：具有屏蔽结构的晶体管组件
公开(公告)号：US08102012B2
公开(公告)日：2012-01-24
申请号：US12426008
申请日：2009-04-17
申请人： Dethard Peters , Peter Friedrichs , Rudolf Elpelt , Larissa Wehrhahn-Kilian , Michael Treu , Roland Rupp
发明人： Dethard Peters , Peter Friedrichs , Rudolf Elpelt , Larissa Wehrhahn-Kilian , Michael Treu , Roland Rupp
IPC分类号： H01L27/088
CPC分类号： H01L29/8083 , H01L29/0657 , H01L29/1066 , H01L29/8122
摘要： A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.
摘要翻译：具有屏蔽结构的晶体管组件。一个实施例提供了源极端子，漏极端子和控制端子。第一导电类型的源极区域连接到源极端子。第一导电类型的漏极区域连接到漏极端子。漂移区设置在源区和排水区之间。提供了结点控制结构，用于控制在漏区和源区之间的漂移区中的接合区，至少包括一个控制区。屏蔽结构布置在结点控制结构和漏区之间的漂移区中，并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。屏蔽区域与屏蔽电位端子相连。所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式