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    • 3. 发明授权
    • Manufacturing methods and uses for micro pipe systems
    • 微管系统的制造方法和用途
    • US06228744B1
    • 2001-05-08
    • US09427898
    • 1999-10-27
    • Ernest Norman LevineMichael Francis LofaroJames Gardner Ryan
    • Ernest Norman LevineMichael Francis LofaroJames Gardner Ryan
    • H01L2176
    • G02B6/131G02B6/132G02B2006/12176H01L23/473H01L2924/0002Y10S366/03H01L2924/00
    • A semiconductor device or other suitable substrate and method with single or multi layers of buried micro pipes are disclosed. This is achieved by controlling the aspect ratio of trenches as well as controlling the deposition characteristics of the material used to fill the trenches. A buried micro pipe is formed by filling a trench that has a height which is larger than a width thereof, so that the trench filler material lines sidewalls and bottom of the trench, and covers the top of the trench to form the micro pipe within the trench. Another layer can be formed over the filler material and planarized. Alternatively, the filler material itself can be planarized. Forming trenches in the planarized layer, and repeating the above steps forms a second set of buried micro pipes in these new trenches. This forms a semiconductor device having multiple layer of buried micro pipes. Via holes may be etched to contact a micro pipe, or to inter connect micro pipes buried at different levels Thus, instead of eliminating defective voids in trenches, the voids are controlled to form the micro pipes, which may be used to circulate a cooling fluid, or lined with a conductive material to form a micro light pipe channel, or buried conductive pipes.
    • 公开了一种具有单层或多层埋入微管的半导体器件或其它合适的衬底和方法。 这通过控制沟槽的纵横比以及控制用于填充沟槽的材料的沉积特性来实现。 通过填充具有大于其宽度的高度的沟槽而形成埋入的微管,使得沟槽填充材料管道沟槽的侧壁和底部,并且覆盖沟槽的顶部以在该沟槽的内部形成微管 沟。 可以在填料材料上形成另一层并进行平面化。 或者,填充材料本身可以被平坦化。 在平坦化层中形成沟槽,并重复上述步骤,在这些新的沟槽中形成第二组埋入的微管。 这形成具有多层埋藏微管的半导体器件。 可以蚀刻通孔以接触微管,或者将不同级别的微管相互连接。因此,不用消除沟槽中的有缺陷的空隙,可以控制空隙以形成微管,这可以用来循环冷却流体 或用导电材料衬里形成微光管通道,或埋入导电管。
    • 4. 发明授权
    • Semiconductor structures containing a micro pipe system therein
    • 其中包含微管系统的半导体结构
    • US6031286A
    • 2000-02-29
    • US808927
    • 1997-02-28
    • Ernest Norman LevineMichael Francis LofaroJames Gardner Ryan
    • Ernest Norman LevineMichael Francis LofaroJames Gardner Ryan
    • G02B6/12G02B6/13G02B6/132H01L23/473H01L23/34
    • G02B6/131G02B6/132H01L23/473G02B2006/12176H01L2924/0002Y10S366/03
    • A semiconductor device or other suitable substrate and method with single or multi layers of buried micro pipes are disclosed. This is achieved by controlling the aspect ratio of trenches as well as controlling the deposition characteristics of the material used to fill the trenches. A buried micro pipe is formed by filling a trench that has a height which is larger than a width thereof, so that the trench filler material lines sidewalls and bottom of the trench, and covers the top of the trench to form the micro pipe within the trench. Another layer can be formed over the filler material and planarized. Alternatively, the filler material itself can be planarized. Forming trenches in the planarized layer, and repeating the above steps forms a second set of buried micro pipes in these new trenches. This forms a semiconductor device having multiple layer of buried micro pipes. Via holes may be etched to contact a micro pipe, or to inter connect micro pipes buried at different levels. Thus, instead of eliminating defective voids in trenches, the voids are controlled to form the micro pipes, which may be used to circulate a cooling fluid, or lined with a conductive material to form a micro light pipe channel, or buried conductive pipes.
    • 公开了一种具有单层或多层埋入微管的半导体器件或其它合适的衬底和方法。 这通过控制沟槽的纵横比以及控制用于填充沟槽的材料的沉积特性来实现。 通过填充具有大于其宽度的高度的沟槽而形成埋入的微管,使得沟槽填充材料管道沟槽的侧壁和底部,并且覆盖沟槽的顶部以在该沟槽内部形成微管 沟。 可以在填料材料上形成另一层并进行平面化。 或者,填充材料本身可以被平坦化。 在平坦化层中形成沟槽,并重复上述步骤,在这些新的沟槽中形成第二组埋入的微管。 这形成具有多层埋藏微管的半导体器件。 可以蚀刻通孔以接触微管,或者将不同层次的微管相互连接。 因此,不是消除沟槽中的有缺陷的空隙,而是控制空隙以形成可用于循环冷却流体或用导电材料衬里以形成微光管通道的微管或埋入的导电管。