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1. 发明专利

JP2002344271A WAFER LEVEL TUNING METHOD AND SYSTEM FOR BULK ACOUSTIC WAVE RESONATOR AND FILTER 审中-公开
公开(公告)号：JP2002344271A
公开(公告)日：2002-11-29
申请号：JP2002124693
申请日：2002-04-25
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： H03H3/013 , H03H3/02 , H03H3/04 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To provide a method and system for realizing a desired resonance frequency of a bulk acoustic wave device within a given tolerance range. SOLUTION: The wafer level tuning method and system for a bulk acoustic wave resonator and a filter includes a step of providing an etching medium on the surface layer at one position, in order to adjust the thickness of at least one position of the surface layer locally all at once, a step of rearranging the etching medium at another position of the surface layer in the device, in order to adjust the thickness of at least another position of the surface layer, and a repeating step of the rearrangement, when at least another remaining position of the surface layer needs adjusting of the thickness.

2. 发明专利

JP2002268644A MONOLITHIC FBAR DUPLEXER AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2002268644A
公开(公告)日：2002-09-20
申请号：JP2001397974
申请日：2001-12-27
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： G10K11/04 , H01L41/09 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/54 , H03H9/70
摘要： PROBLEM TO BE SOLVED: To provide a monolithic FBAR duplexer which can be made small- sized and reduced in manufacture cost and a method for manufacturing it. SOLUTION: On a single substrate, a transmitting filter and a receiving filter each having an L type section composed of a series resonator and a shunt resonator are provided and the shunt resonators of both the filters are provided with tuning layers and the series resonator of one of the filters and both the shunt resonators are provided with tuning layers to form the duplexer which has the transmitting filter and receiving filter differing in frequency. Thus, the size of equipment is reduced and the manufacture cost is lowered.

3. 发明专利

JP2002311959A METHOD AND SYSTEM FOR WAFER LEVEL TUNING OF BULK SOUND RESONATOR AND FILTER 审中-公开
公开(公告)号：JP2002311959A
公开(公告)日：2002-10-25
申请号：JP2002018553
申请日：2002-01-28
申请人： NOKIA CORP
发明人： ELLAE JUHA , TIKKA PASI , KAITILA JYRKI
IPC分类号： G10K11/02 , H01L41/22 , H03H3/013 , H03H3/04
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for obtaining a desired resonance frequency of a bulk sound wave device within a specified permissible tolerance. SOLUTION: The method for turning the bulk sound wave device formed of a plurality of sound wave generation and control layers on a substrate includes a process of providing a mask with an aperture near to the surface of the device, a process of varying the thickness of the device by providing a particle beam onto the mask, making at least a part of the particle beam pass through the aperture, and bringing the device surface into contact with a contact area substantially segmented by the aperture, and a process of varying the contact area by rearranging the aperture of the mask laterally on the device surface.

4. 发明专利

JP2002278558A BAULK ACOUSTIC WAVE RESONATOR HAVING ELECTRICALLY CONDUCTIVE MIRROR 审中-公开
公开(公告)号：JP2002278558A
公开(公告)日：2002-09-27
申请号：JP2002006608
申请日：2002-01-15
申请人： NOKIA CORP
发明人： ELLAE JUHA , KAITILA JYRKI
IPC分类号： G10K11/04 , H03H3/02 , H03H9/10 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To provide a bulk acoustic wave resonator, in which necessary high reflectivity is obtained on both the top and the bottom of the resonator portions, having no parasitic inductance or no resistance and no hermetically sealed type package is required. SOLUTION: A bulk acoustic wave(BAW) resonator is provided with a resonator portion, which includes (a) a substrate, (b) a first isolation structure and (c) a piezoelectric layer. The first isolation structure is a BAW resonator, including an acoustic mirror made from only an electrically conductive layer, in which high and low acoustic impedances are alternatively varied.

5. 发明专利

JP2003050584A Method and system for wafer-level tuning of bulk acoustic wave resonator and filter 有权
标题翻译：大容量波形谐振器和滤波器的水平调谐方法与系统
公开(公告)号：JP2003050584A
公开(公告)日：2003-02-21
申请号：JP2002126693
申请日：2002-04-26
申请人： Nokia Corp , ノキアコーポレーション
发明人： ELLA JUHA , TIKKA PASI , KAITILA JYRKI
IPC分类号： H01L21/66 , G10K11/04 , H01L41/09 , H01L41/18 , H01L41/22 , H03H3/04 , H03H9/17
CPC分类号： H03H3/04 , H03H2003/0414 , H03H2003/0478 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a bulk acoustic wave resonator from which a bulk acoustic wave device having a uniform operation frequency can be fabricated on a large substrate or wafer. SOLUTION: This invention relates to a method and a system for tuning the bulk acoustic wave resonator and a filter at a wafer level for correcting non-uniformity of thickness of a device to the non-uniformity of thickness of the device caused when a bulk acoustic wave device is fabricated on a large substrate or wafer, by using an etching mask having such non-uniformity of thickness as to correct the non-uniformity of the thickness.
摘要翻译：要解决的问题：提供一种能够在大的衬底或晶片上制造具有均匀的工作频率的体声波器件的体声波谐振器。解决方案：本发明涉及一种用于调整体声波谐振器和晶片级滤波器的方法和系统，用于将器件厚度的不均匀性校正为器件厚度的不均匀性，当体声通过使用具有厚度不均匀性的蚀刻掩模来校正厚度的不均匀性，在大的衬底或晶片上制造波器件。

6. 发明专利

JP2002353761A WAFER-LEVEL TUNING OF BULK ACOUSTIC WAVE RESONATOR AND FILTER 审中-公开
公开(公告)号：JP2002353761A
公开(公告)日：2002-12-06
申请号：JP2002119478
申请日：2002-04-22
申请人： NOKIA CORP
发明人： KAITILA JYRKI , TIKKA PASI , ELLA JUHA
IPC分类号： C23C16/04 , H03H3/013 , H03H3/02 , H03H3/04
摘要： PROBLEM TO BE SOLVED: To manufacture a bulk acoustic wave element with a uniform operat ing frequency on a large-sized substrate. SOLUTION: In the case of manufacturing bulk acoustic elements by thin film layers formed on a substrate by a chemical vapor deposition process, by locally supplying a medium for promoting the chemical vapor deposition process to the substrate, the operating frequencies of the bulk acoustic wave elements can be tuned uniformly.

7. 发明专利

JP2002251190A SOLIDLY MOUNTED MULTI-RESONATOR BULK ACOUSTIC WAVE FILTER WITH PATTERNED ACOUSTIC MIRROR 审中-公开
公开(公告)号：JP2002251190A
公开(公告)日：2002-09-06
申请号：JP2001388031
申请日：2001-12-20
申请人： NOKIA CORP
发明人： ELLAE JUHA , KAITILA JYRKI , PARTANEN MEERI TALVIKKI
IPC分类号： G10K11/04 , H01L41/09 , H01L41/22 , H03H3/02 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/205 , H03H9/54 , H03H9/56 , H03H9/58
摘要： PROBLEM TO BE SOLVED: To provide an acoustic mirror type resonator which provides excellent reflection characteristics by a relatively small number of layers and causes no capacitive coupling with other resonators formed on the same substrate and using the same acoustic mirror. SOLUTION: A method of fabricating a multi-resonator BAW(bulk acoustic wave) filter with reduced capacitive coupling between resonators, comprises (a) a step of selecting a dielectric material serving as an acoustic mirror and a metallic material, and (b) a step of providing at least one metallic layer through a fabrication procedure in which the metallic layer is patterned into distinct portions by an etching process that removes enough of the metallic layer between portions where different resonator sections are to be placed so as to provide electrical isolation between the portions of the layer beneath the different resonator sections.

8. 发明专利

DE60134620D1 未知
公开(公告)号：DE60134620D1
公开(公告)日：2008-08-14
申请号：DE60134620
申请日：2001-12-28
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： G10K11/04 , H03H9/70 , H01L41/09 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/54 , H03H9/58

9. 发明专利

AT400085T 未知
公开(公告)号：AT400085T
公开(公告)日：2008-07-15
申请号：AT01310921
申请日：2001-12-28
申请人： NOKIA CORP
发明人： TIKKA PASI , ELLA JUHA , KAITILA JYRKI
IPC分类号： G10K11/04 , H03H9/70 , H01L41/09 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/54 , H03H9/58

10. 发明专利

DE60134621D1 未知
公开(公告)号：DE60134621D1
公开(公告)日：2008-08-14
申请号：DE60134621
申请日：2001-12-28
申请人： NOKIA CORP
发明人： ELLA JUHA , KAITILA JYRKI , PARTANEN MEERI TALVIKKI
IPC分类号： G10K11/04 , H03H9/58 , H01L41/09 , H01L41/22 , H03H3/02 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/205 , H03H9/54 , H03H9/56
摘要： A method of fabricating a mufti-resonator bulk acoustic wave (BAW) filter and a filter provided by such a method, the filter having a plurality of layers of materials serving as an acoustic mirror for a plurality of resonator sections, each resonator section including at least a top electrode and a bottom electrode sandwiching a piezolayer, the method including the steps of: choosing dielectric materials for some of the layers of materials serving as the acoustic mirror and metallic materials for the others of the layers; and providing at least one of the metallic layers via a fabrication procedure in which the metallic layer is patterned into distinct portions by an etching process that removes enough of the metallic layer between where different resonator sections are to be placed as to provide electrical isolation between the portions of the layer beneath the different resonator sections; thereby providing a multi-resonator BAW filter with reduced capacitive coupling between resonators, compared to the capacitive coupling present in a multi-resonator BAW filter fashioned in a similar manner except excluding the step of etching to pattern any metallic layers of the similarly fashioned acoustic mirror.

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