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1. 发明授权

US5514881A Gap light emitting device having a low carbon content in the substrate 失效
标题翻译：在基板中具有低碳含量的间隙发光器件
公开(公告)号：US5514881A
公开(公告)日：1996-05-07
申请号：US377132
申请日：1995-01-23
申请人： Munehisa Yanagisawa , Susumu Higuchi , Yu K. Tamura , Akio Nakamura , Toshio Otaki
发明人： Munehisa Yanagisawa , Susumu Higuchi , Yu K. Tamura , Akio Nakamura , Toshio Otaki
IPC分类号： H01L33/02 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/025 , H01L33/305
摘要： A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc, but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.
摘要翻译：一种用于GaP型发光器件的半导体衬底，其包括在n型GaP单晶衬底上形成的n型单晶衬底，n型GaP层和p型GaP层。 n型GaP单晶衬底中的碳浓度大于1.0×1016原子/ cc，但小于1.0×10 17原子/ cc。 n型GaP单晶基板是通过使用液态封装法，其使用含有对应于200ppm以上的水的B 2 O 3作为封装液体的液体封装法，由n型GaP单晶获得。

2. 发明授权

US5234534A Liquid-phase growth process of compound semiconductor 失效
标题翻译：化合物半导体的液相生长过程
公开(公告)号：US5234534A
公开(公告)日：1993-08-10
申请号：US719331
申请日：1992-07-27
申请人： Munehisa Yanagisawa , Akio Nakamura , Toshio Otaki , Susumu Higuchi
发明人： Munehisa Yanagisawa , Akio Nakamura , Toshio Otaki , Susumu Higuchi
IPC分类号： C30B19/00 , C30B19/04 , C30B19/10 , C30B27/00 , C30B29/44 , H01L21/208
CPC分类号： C30B19/10 , C30B19/04 , C30B29/44 , C30B7/005 , Y10S117/906
摘要： A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a substrate and a solution are held in a 100% hydrogen atmosphere or a mixed gas atmosphere consisting of more than 80% of hydrogen and the rest of an inert gas, and immediately before the start of the liquid-phase growth, the atmosphere is changed to a mixed gas atmosphere consisting of not more than 60% of hydrogen and the rest of the inert gas.

3. 发明授权

US5851850A Method for fabricating a gap type semiconductor substrate of red light emitting devices 失效
标题翻译：用于制造红色发光器件的间隙型半导体衬底的方法
公开(公告)号：US5851850A
公开(公告)日：1998-12-22
申请号：US516096
申请日：1995-08-17
申请人： Munehisa Yanagisawa , Susumu Higuchi , Yuuki Tamura , Akio Nakamura , Toshio Otaki
发明人： Munehisa Yanagisawa , Susumu Higuchi , Yuuki Tamura , Akio Nakamura , Toshio Otaki
IPC分类号： H01L33/00 , H01L33/02 , H01L21/00
CPC分类号： H01L33/025 , H01L33/0062
摘要： A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.
摘要翻译：一种用于GaP型发光器件的半导体衬底，其包括在n型GaP单晶衬底上形成的n型单晶衬底，n型GaP层和p型GaP层。 n型GaP单晶衬底中的碳浓度大于1.0×1016原子/ cc但小于1.0×10 17原子/ cc。 n型GaP单晶基板是通过使用液态封装法，其使用含有对应于200ppm以上的水的B 2 O 3作为封装液体的液体封装法，由n型GaP单晶获得。

4. 发明授权

US5643827A GaP light emitting substrate and a method of manufacturing it 失效
标题翻译： GaP发光基板及其制造方法
公开(公告)号：US5643827A
公开(公告)日：1997-07-01
申请号：US358977
申请日：1994-12-19
申请人： Toshio Ootaki , Akio Nakamura , Yuuki Tamura , Munehisa Yanagisawa , Susumu Higuchi
发明人： Toshio Ootaki , Akio Nakamura , Yuuki Tamura , Munehisa Yanagisawa , Susumu Higuchi
IPC分类号： H01L33/02 , H01L33/12 , H01L33/30 , H01L21/20
CPC分类号： H01L33/305 , H01L33/025 , Y10S438/955
摘要： A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) on an n-type GaP single crystal substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less. The method of manufacturing it is as follows: an n-type GaP buffer layer(s) is formed on an n-type GaP single crystal substrate to prepare a multi-layer GaP substrate, then an n-type GaP layer, a nitrogen doped n-type GaP layer and a p-type GaP layer are layered on said multi-layer GaP substrate by means of the melt-back method to obtain a GaP light emitting element substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less when the multi-layer GaP substrate is prepared.
摘要翻译：一种GaP发光元件基板，其包括在通过形成n型GaP缓冲器构成的多层GaP基板上依次层叠的n型GaP层，氮掺杂n型GaP层和p型GaP层其中n型GaP缓冲层中的硫（S）浓度为5×10 16 [原子/ cc]以下。其制造方法如下：在n型GaP单晶衬底上形成n型GaP缓冲层，以制备多层GaP衬底，然后将n型GaP层，氮掺杂 n型GaP层和p型GaP层通过熔融回归法层叠在所述多层GaP衬底上，以获得GaP发光元件衬底，其中所述n型GaP层中的硫（S）浓度当制备多层GaP衬底时，GaP缓冲层为5×10 16 [原子/ cc]以下。

5. 发明授权

US5603761A Liquid phase epitaxial growth method for carrying out the same 失效
标题翻译：液相外延生长法进行相同
公开(公告)号：US5603761A
公开(公告)日：1997-02-18
申请号：US510861
申请日：1995-08-03
申请人： Munehisa Yanagisawa , Susumu Higuchi , Yuji Yoshida , Masahiko Saito
发明人： Munehisa Yanagisawa , Susumu Higuchi , Yuji Yoshida , Masahiko Saito
IPC分类号： C30B19/00 , C30B19/06 , C30B29/44 , C30B35/00 , H01L21/208
CPC分类号： C30B19/064 , Y10T117/10 , Y10T117/1024
摘要： In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid phase growth is held in a solution chamber having at least one second vent hole and at least two sub-chambers separated by a partition plate and communicated with each other via a communicating portion; and before the substrates and the solution for liquid phase growth are brought into contact with each other, the deposition chamber and the solution chamber are revolved for causing the solution for liquid phase growth to move through the communicating portion so as to increase and decrease the volume of space portions of the respective sub-chambers and thereby replacement of a heat-treatment gas in the deposition chamber and the solution chamber is undertaken to achieve heat treatment. With this heat-treatment, surface oxide films on the substrates and the solution are removed, thus making it possible to obtain a liquid phase epitaxial layer with excellent qualities.
摘要翻译：在改进的液相外延生长方法和装置中，其中多个基板被放置在具有至少一个第一通气孔的沉积室中; 用于液相生长的溶液被保持在具有至少一个第二通气孔的溶液室中，并且至少两个分隔开的隔板通过连通部分彼此连通; 在基板和液相生长用溶液彼此接触之前，使沉积室和溶液室旋转，使液相生长溶液移动通过连通部，从而增大和减小体积的各个副室的空间部分，由此更换沉积室和溶液室中的热处理气体以实现热处理。通过这种热处理，去除了基板上的表面氧化膜和溶液，从而可以获得具有优良品质的液相外延层。

6. 发明授权

US5731209A Method for the determination of nitrogen concentration in compound semiconductor 失效
标题翻译：化合物半导体氮浓度测定方法
公开(公告)号：US5731209A
公开(公告)日：1998-03-24
申请号：US614206
申请日：1996-03-12
申请人： Masato Yamada , Munehisa Yanagisawa , Susumu Higuchi
发明人： Masato Yamada , Munehisa Yanagisawa , Susumu Higuchi
IPC分类号： G01N21/31 , H01L21/66 , H01L33/30 , G01N21/59
CPC分类号： G01N21/31 , Y10T436/17 , Y10T436/176152
摘要： An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen concentration and the difference .DELTA..alpha.(=.alpha..sub.N -.alpha.) in the absorption coefficient of light of a wavelength identical with the wavelength .lambda..sub.N due to the excitons under constraint in the isoelectronic trap between the semiconductors with (.alpha..sub.N) and without (.alpha.) addition of nitrogen. A working curve is presented between the nitrogen concentration determined by the method of SIMS and the value of .DELTA..alpha..
摘要翻译：提出了一种有效的方法来确定作为等电子阱添加的间接转移化合物半导体如磷化镓中的氮浓度。该方法利用这样一个事实，即由于激子在约束条件下，在与波长λN相同的波长的光的吸收系数中，氮浓度和差ΔTA（=αNa-α）之间保持相称性的良好相关性在具有（αN）和没有（α）氮的氮的半导体之间的等电子阱中。介绍了通过SIMS方法测定的氮浓度与DELTAα值之间的工作曲线。

7. 发明授权

US5349208A GaP light emitting element substrate with oxygen doped buffer 失效
标题翻译： GaP发光元件衬底，带氧掺杂缓冲液
公开(公告)号：US5349208A
公开(公告)日：1994-09-20
申请号：US147480
申请日：1993-11-05
申请人： Munehisa Yanagisawa , Susumu Higuchi , Yuuki Tamura
发明人： Munehisa Yanagisawa , Susumu Higuchi , Yuuki Tamura
IPC分类号： H01L33/12 , H01L33/30 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L33/305 , H01L24/32 , H01L2924/12036 , H01L2924/12041
摘要： To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.
摘要翻译：为获得GaP发光元件基板，其提供具有较低亮度色散和高亮度的GaP发光二极管。一种GaP发光元件基板，包括在n型GaP单晶衬底上依次层叠的n型GaP缓冲层，n型GaP层和p型GaP层，其中，型GaP缓冲层保持在6×10 15 [原子/ cc]以下。

8. 发明授权

US5985023A Method for growth of a nitrogen-doped gallium phosphide epitaxial layer 失效
标题翻译：氮掺杂磷化镓外延层生长方法
公开(公告)号：US5985023A
公开(公告)日：1999-11-16
申请号：US620158
申请日：1996-03-22
申请人： Susumu Higuchi , Masato Yamada , Munehisa Yanagisawa
发明人： Susumu Higuchi , Masato Yamada , Munehisa Yanagisawa
IPC分类号： C30B19/10 , C30B29/44 , H01L21/208 , H01L33/30
CPC分类号： H01L33/025 , H01L21/02392 , H01L21/0254 , H01L21/02543 , H01L21/0257 , H01L21/02625 , H01L21/02628 , H01L33/0062
摘要： While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the efficiency of light emission, the present invention provides a reliable and efficient means to accomplish a high nitrogen concentration by the increase of the concentration of ammonia as a nitrogen source in the doping atmosphere to the contrary to the general understanding that increase of the ammonia concentration to exceed a limit rather has an effect of decreasing the concentration of nitrogen doped in the epitaxial layer. The inventive method is based on the discovery that an exponential relationship is held between the growth rate of the epitaxial layer and the concentration of nitrogen in the thus grown epitaxial layer.
摘要翻译：作为发光二极管材料的外延晶片中的氮掺杂的磷化镓外延层希望具有高浓度的氮以提高发光效率，本发明提供了一种可靠和有效的方法，通过在掺杂气氛中作为氮源的氨的浓度的增加来实现高氮浓度，这与普遍认识到氨浓度超过极限的增加相反，具有降低氮掺杂浓度的作用外延层。本发明的方法是基于这样的发现，即在外延层的生长速率和由此生长的外延层中的氮浓度之间保持指数关系。

9. 发明授权

US5759267A Liquid phase epitaxial 失效
标题翻译：液相外延
公开(公告)号：US5759267A
公开(公告)日：1998-06-02
申请号：US728197
申请日：1996-10-10
申请人： Munehisa Yanagisawa , Susumu Higuchi , Yuji Yoshida , Masahiko Saito
发明人： Munehisa Yanagisawa , Susumu Higuchi , Yuji Yoshida , Masahiko Saito
IPC分类号： C30B19/00 , C30B19/06 , C30B29/44 , C30B35/00 , H01L21/208
CPC分类号： C30B19/064 , Y10T117/10 , Y10T117/1024
摘要： In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid phase growth is held in a solution chamber having at least one second vent hole and at least two sub-chambers separated by a partition plate and communicated with each other via a communicating portion; and before the substrates and the solution for liquid phase growth are brought into contact with each other, the deposition chamber and the solution chamber are revolved for causing the solution for liquid phase growth to move through the communicating portion so as to increase and decrease the volume of space portions of the respective sub-chambers and thereby replacement of a heat-treatment gas in the deposition chamber and the solution chamber is undertaken to achieve heat treatment. With this heat-treatment, surface oxide films on the substrates and the solution are removed, thus making it possible to obtain a liquid phase epitaxial layer with excellent qualities.
摘要翻译：在改进的液相外延生长方法和装置中，其中多个基板被放置在具有至少一个第一通气孔的沉积室中; 用于液相生长的溶液被保持在具有至少一个第二通气孔的溶液室中，并且至少两个分隔开的隔板通过连通部分彼此连通; 在基板和液相生长用溶液彼此接触之前，使沉积室和溶液室旋转，使液相生长溶液移动通过连通部，从而增大和减小体积的各个副室的空间部分，由此更换沉积室和溶液室中的热处理气体以实现热处理。通过这种热处理，去除了基板上的表面氧化膜和溶液，从而可以获得具有优良品质的液相外延层。

10. 发明授权

US5406093A Gap pure green light emitting element substrate 失效
标题翻译：间隙纯绿色发光元件基板
公开(公告)号：US5406093A
公开(公告)日：1995-04-11
申请号：US230538
申请日：1994-04-20
申请人： Masahisa Endo , Akio Nakamura , Susumu Higuchi
发明人： Masahisa Endo , Akio Nakamura , Susumu Higuchi
IPC分类号： H01L33/30 , H01L33/00
CPC分类号： H01L33/305
摘要： A GaP pure green light emitting element substrate comprising an n-type GaP layer 12 and a p-type GaP layer 14 formed on a GaP single crystal substrate 10, characterized by the fact that an intermediate GaP layer 13 is formed at the pn junction portion between said n-type GaP layer 12 and said p-type GaP layer 14, wherein said intermediate GaP layer has a donor concentration N.sub.D of less than 1.times.10.sup.-16 atoms/cm.sup.3 and an acceptor concentration N.sub.A nearly equal to the donor concentration N.sub.D. The thickness of the intermediate GaP layer 13 is in the range of 3-5 micrometers.
摘要翻译：一种GaP纯绿色发光元件基板，包括形成在GaP单晶衬底10上的n型GaP层12和p型GaP层14，其特征在于，在pn结部分形成中间GaP层13 在所述n型GaP层12和所述p型GaP层14之间，其中所述中间GaP层的供体浓度ND小于1×10-16原子/ cm3，受主浓度NA几乎等于供体浓度ND。中间GaP层13的厚度在3-5微米的范围内。

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