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1. 发明申请

US20080258166A1 Semiconductor Light Emitting Device and Method for Manufacturing the Same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080258166A1
公开(公告)日：2008-10-23
申请号：US11596124
申请日：2005-05-10
申请人： Mitsuhiko Sakai , Shinichi Kohda , Masayuki Sonobe , Ken Nakahara
发明人： Mitsuhiko Sakai , Shinichi Kohda , Masayuki Sonobe , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： There is provided a semiconductor light emitting semiconductor device including an n-side electrode which has a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer. Further, there is provided a light emitting device and a manufacturing method wherein an ohmic contact between the n-side electrode and the nitride semiconductor layer can be obtained by a simple manufacturing process, and the n-side electrode has an Au layer on a top surface to facilitate wire bonding. Semiconductor layers (2-8) to form a light emitting layer are laminated on a surface of a substrate (1) made of, for example, a sapphire (Al2O3 single crystal) or the like and a p-side electrode (10) is formed on the surface thereof thorough a light transmitting conductive layer (9). An n-side electrode (11) is formed on an exposed surface of an n-type layer (4), exposed by removing a part of the semiconductor layers (4-8) by etching. The n-side electrode includes actually an Al layer (11a) in contact with the n-type layer, a barrier metal layer (11b) and an Au layer (11c).
摘要翻译：提供一种包括具有能够稳定地抑制n侧电极和氮化物半导体层之间的接触电阻的结构的n侧电极的半导体发光半导体器件。此外，提供了一种发光器件及其制造方法，其中通过简单的制造工艺可以获得n侧电极和氮化物半导体层之间的欧姆接触，并且n侧电极在顶部具有Au层表面方便引线接合。形成发光层的半导体层（2〜8）层压在由例如蓝宝石（Al 2 O 3·N 3）构成的基板（1）的表面上 >单晶）等，并且通过透光导电层（9）在其表面上形成p侧电极（10）。在n型层（4）的暴露表面上形成n侧电极（11），通过蚀刻去除一部分半导体层（4-8）而露出。 n侧电极实际上包括与n型层接触的Al层（11a），阻挡金属层（11b）和Au层（11c）。

2. 发明授权

US07566639B2 Manufacturing method for nitride semiconductor device and nitride semiconductor light emitting device obtained with the same 有权
标题翻译：用其制造的氮化物半导体器件和氮化物半导体发光器件的制造方法
公开(公告)号：US07566639B2
公开(公告)日：2009-07-28
申请号：US11521553
申请日：2006-09-15
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L21/78
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0075 , H01L33/0095 , H01S5/0201 , H01S5/0202 , H01S5/22 , H01S5/2214
摘要： Processed traces are formed on at least a part of intended cutting lines A along which a wafer (10) where a nitride semiconductor lamination portion (6) is formed on a GaN based substrate (1) is divided into chips, by irradiating with a laser beam LB having a wavelength which is longer than the band gap wavelength of the GaN based substrate 1 and an electrical field intensity which causes a multiple photons absorption, while adjusting the focal point to a constant depth d within the GaN based substrate (1) from the back surface of the wafer. After that, the wafer (10) is divided into chips along cutting starting points (12) which are formed in the vicinity of the processed traces by hitting with an impact. As a result, the wafer can be easily divided into chips, and in particular, end faces of a resonator can be formed with cleavage planes when an LD is formed.
摘要翻译：处理过的迹线形成在预期的切割线A的至少一部分上，其中在GaN基衬底（1）上形成氮化物半导体层叠部分（6）的晶片（10）通过照射激光器被分成芯片在GaN基基板（1）内将聚焦点调整到恒定深度d的同时，具有长于GaN基基板1的带隙波长的波长的光束LB和引起多个光子吸收的电场强度晶片的背面。之后，将晶片（10）沿切割起始点（12）分割成芯片，所述切割起点（12）通过冲击撞击而形成在处理过的迹线附近。结果，晶片可以容易地分成芯片，并且特别地，当形成LD时，可以形成具有解理面的谐振器的端面。

3. 发明申请

US20070114513A1 SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER 失效
标题翻译：半导体激光器和制造半导体激光器的方法
公开(公告)号：US20070114513A1
公开(公告)日：2007-05-24
申请号：US11560972
申请日：2006-11-17
申请人： Hiroaki Ohta , Shinichi Kohda
发明人： Hiroaki Ohta , Shinichi Kohda
IPC分类号： H01L29/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0207 , H01S5/0425 , H01S5/22 , H01S5/3202 , H01S2301/176 , H01S2304/12
摘要： A back-surface-electrode type semiconductor laser of GaN-based compound has low electric resistance and high light emitting efficiency, and includes negative electrodes made of Al having a contact surface that contacts with the n-type GaN substrate. The back-surface-electrode type semiconductor laser has GaN-based compound layers laminated on an n-type GaN substrate with an area of reversal of polarity with low electric resistance and a negative electrode is disposed on the side opposite to the side of GaN-based compound layer of the GaN substrate so as to come in contact with the area of reversal of polarity.
摘要翻译： GaN类化合物的背表面电极型半导体激光器具有低电阻和高发光效率，并且包括由具有与n型GaN衬底接触的接触表面的Al制成的负极。背面电极型半导体激光器具有层叠在具有低电阻的极性反转面积的n型GaN衬底上的GaN基化合物层，负极设置在与GaN- 与GaN基板的基底化合物层接触以使极性反转的区域接触。

4. 发明申请

US20070063215A1 Manufacturing method for nitride semiconductor device and nitride semiconductor light emitting device obtained with the same 有权
标题翻译：用其制造的氮化物半导体器件和氮化物半导体发光器件的制造方法
公开(公告)号：US20070063215A1
公开(公告)日：2007-03-22
申请号：US11521553
申请日：2006-09-15
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0075 , H01L33/0095 , H01S5/0201 , H01S5/0202 , H01S5/22 , H01S5/2214
摘要： Processed traces are formed on at least a part of intended cutting lines A along which a wafer (10) where a nitride semiconductor lamination portion (6) is formed on a GaN based substrate (1) is divided into chips, by irradiating with a laser beam LB having a wavelength which is longer than the band gap wavelength of the GaN based substrate 1 and an electrical field intensity which causes a multiple photons absorption, while adjusting the focal point to a constant depth d within the GaN based substrate (1) from the back surface of the wafer. After that, the wafer (10) is divided into chips along cutting starting points (12) which are formed in the vicinity of the processed traces by hitting with an impact. As a result, the wafer can be easily divided into chips, and in particular, end faces of a resonator can be formed with cleavage planes when an LD is formed.
摘要翻译：处理过的迹线形成在预期的切割线A的至少一部分上，其中在GaN基基板（1）上形成氮化物半导体层叠部分（6）的晶片（10）通过照射激光器被分成芯片在GaN基基板（1）内将聚焦点调整到恒定深度d的同时，具有长于GaN基基板1的带隙波长的波长的光束LB和引起多个光子吸收的电场强度晶片的背面。之后，将晶片（10）沿切割起始点（12）分割成芯片，所述切割起点（12）通过冲击撞击而形成在处理过的迹线附近。结果，晶片可以容易地分成芯片，并且特别地，当形成LD时，可以形成具有解理面的谐振器的端面。

5. 发明授权

US07876798B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07876798B2
公开(公告)日：2011-01-25
申请号：US12344343
申请日：2008-12-26
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/2009 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333
摘要： A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate.
摘要翻译：通过在不含Al的衬底上生长III族氮化物半导体多层结构，形成氮化物半导体激光器件。 III族氮化物半导体多层结构形成包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层的结构。 n型半导体层包括含有Al的n型包覆层和具有比n型覆层更小的带隙的n型引导层。 p型半导体层包括含有Al的p型覆层和具有比p型覆层更小的带隙的p型引导层。通过从衬底部分去除III族氮化物半导体多层结构中含有Al的层来形成去除区。

6. 发明申请

US20070131939A1 Semiconductor laser and method for manufacturing the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20070131939A1
公开(公告)日：2007-06-14
申请号：US10578477
申请日：2004-11-12
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01S5/0201 , H01S5/0202 , H01S5/1082 , H01S5/16 , H01S5/22 , H01S5/32341
摘要： A semiconductor lamination portion (9) including an active layer (4) is formed on a substrate (1). The semiconductor lamination portion is made of, for example, a nitride material having a cleavage plane not parallel to a cleavage plane of the substrate (1) and has a resonance cavity end faces (6) from which a laser beam is emitted. And a metal layer portion (5) is provided between the substrate and the active layer in a vicinity of the resonance cavity end faces. As a result, even if a crack is caused between the substrate and the semiconductor lamination portion, an extension of the crack stops at the metal layer portion, thereby the crack does not reach to the active layer at the resonance cavity end faces, and the cleavage plane free from any crack can be obtained at the resonance cavity end faces. Therefore, as an absorption loss at the resonance cavity end faces is reduced, the semiconductor laser which is driven with low operating current and has high reliability can be obtained.
摘要翻译：在基板（1）上形成包括有源层（4）的半导体层叠部（9）。半导体层叠部由例如具有不与基板（1）的解理面平行的解理面的氮化物构成，具有从其射出激光的谐振腔端面（6）。并且在共振腔端面附近，在基板和有源层之间设置有金属层部分（5）。结果，即使在基板和半导体层叠部之间产生裂纹，裂纹的延伸在金属层部分停止，因此裂纹在共振腔端面处不到达有源层，并且可以在谐振腔端面获得没有任何裂纹的裂纹平面。因此，由于谐振腔端面的吸收损耗减小，所以可以获得以低工作电流驱动且具有高可靠性的半导体激光器。

7. 发明申请

US20050040407A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20050040407A1
公开(公告)日：2005-02-24
申请号：US10916669
申请日：2004-08-12
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L21/20 , H01L27/15 , H01L33/12 , H01L33/32 , H01L33/34 , H01S5/02 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01L33/32 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02587 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01S5/0213 , H01S5/0425 , H01S5/2205 , H01S5/2231 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： Causing the growth of a GaN material with respect to a sapphire substrate using a conventional technique is inevitably followed by the occurrence of dislocations. Using a mask layer results in that the dislocations laterally flow. However, since the GaN crystal collides with a semiconductor layer that laterally grew from an adjacent region, perfect elimination of the dislocations is impossible. In view thereof, the invention is intended to provide a nitride compound-based semiconductor light emitting device which is based on using semiconductor layers that have been formed in a state of the dislocations' being less existent therein and which therefore has excellent property. To solve the above-described problems, the invention provides a semiconductor light emitting device being a gallium nitride-based semiconductor light emitting device that not only is equipped with a substrate but is also equipped with at least a first conductivity type semiconductor layer, active layer, and second conductivity type semiconductor layer in this sequential order on the substrate, wherein the first conductivity type semiconductor layer has a level difference portion the levels of which have a spacing therebetween in the lamination direction; and the dislocation density of the active layer that is formed on a portion of the first conductivity type semiconductor layer that has the higher level is lower than that of the active layer that is formed on a portion thereof that has the lower level.
摘要翻译：使用常规技术使GaN材料相对于蓝宝石衬底的生长不可避免地发生位错。使用掩模层导致位错横向流动。然而，由于GaN晶体与从相邻区域横向生长的半导体层碰撞，因此不可能完全消除位错。鉴于此，本发明旨在提供一种基于使用在位错较少存在的状态下形成的半导体层的氮化物系半导体发光元件，因此具有优异的性能。为了解决上述问题，本发明提供了一种半导体发光器件，其是氮化镓系半导体发光器件，其不仅配备有基板，而且还配备有至少第一导电型半导体层，有源层和第二导电类型半导体层，其中第一导电类型半导体层具有层级在层叠方向上具有间隔的电平差部分; 并且形成在具有较高电平的第一导电类型半导体层的部分上的有源层的位错密度低于形成在其较低电平的部分上的有源层的位错密度。

8. 发明授权

US08422527B2 Nitride based semiconductor device and fabrication method for the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08422527B2
公开(公告)日：2013-04-16
申请号：US13371490
申请日：2012-02-13
申请人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
发明人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L29/2003 , H01S5/0021 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S2301/173 , H01S2301/185
摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
摘要翻译：氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

9. 发明申请

US20090230514A1 Method of manufacturing nitride semiconductor device 审中-公开
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US20090230514A1
公开(公告)日：2009-09-17
申请号：US12219691
申请日：2008-07-25
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L29/20 , H01L21/26 , H01L21/20 , H01L21/304
CPC分类号： H01L33/0095 , B23K26/40 , B23K26/53 , B23K2103/50 , H01L21/78 , H01L33/0079 , H01S5/0202 , H01S5/0213 , H01S5/32341
摘要： A method of manufacturing a nitride semiconductor device includes the steps of: growing a group III nitride semiconductor layer on a substrate; forming a processed region in the substrate with a laser beam; and reducing the thickness of the substrate thereby spontaneously dividing the substrate from the processed region by the internal stress of the substrate. The substrate may be a sapphire substrate or an SiC substrate.
摘要翻译：一种制造氮化物半导体器件的方法包括以下步骤：在衬底上生长III族氮化物半导体层; 用激光束在衬底中形成经处理的区域; 并且减小衬底的厚度，从而通过衬底的内部应力自发地将衬底与处理区域分开。衬底可以是蓝宝石衬底或SiC衬底。

10. 发明申请

US20090148975A1 Method of manufacturing nitride semiconductor device 审中-公开
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US20090148975A1
公开(公告)日：2009-06-11
申请号：US12078063
申请日：2008-03-26
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L21/268
CPC分类号： H01S5/32341 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , H01S5/0201 , H01S5/0202 , H01S5/22 , H01S5/2201 , H01S5/3202
摘要： A method of manufacturing a nitride semiconductor device includes: a working region forming step of forming a working region in a group III nitride semiconductor substrate by converging a laser beam having a wavelength of 500 nm to 700 nm in the group III nitride semiconductor substrate and by scanning a convergent point of the laser beam in a prescribed scanning direction in the interior of the group III nitride semiconductor substrate; and a dividing step of dividing the group III nitride semiconductor substrate by generating a crack from the working region without processing a surface of the group III nitride semiconductor substrate.
摘要翻译：一种制造氮化物半导体器件的方法包括：工作区形成步骤，通过在III族氮化物半导体衬底中会聚具有500nm至700nm波长的激光束并通过在III族氮化物半导体衬底中会聚而形成工作区，在III族氮化物半导体衬底的内部沿规定的扫描方向扫描激光束的会聚点; 以及分割步骤，在不处理III族氮化物半导体衬底的表面的情况下，从工作区域产生裂纹来划分III族氮化物半导体衬底。

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