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1. 发明申请

US20100008391A1 Nitride based semiconductor device and fabrication method for the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US20100008391A1
公开(公告)日：2010-01-14
申请号：US12379945
申请日：2009-03-04
申请人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
发明人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
IPC分类号： H01S5/00 , H01L29/205 , H01L29/15
CPC分类号： H01S5/34333 , B82Y20/00 , H01L29/2003 , H01S5/0021 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S2301/173 , H01S2301/185
摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
摘要翻译：氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

2. 发明授权

US08422527B2 Nitride based semiconductor device and fabrication method for the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08422527B2
公开(公告)日：2013-04-16
申请号：US13371490
申请日：2012-02-13
申请人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
发明人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L29/2003 , H01S5/0021 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S2301/173 , H01S2301/185
摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
摘要翻译：氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

3. 发明申请

US20120140785A1 NITRIDE BASED SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20120140785A1
公开(公告)日：2012-06-07
申请号：US13371490
申请日：2012-02-13
申请人： Daisuke NAKAGAWA , Yoshinori TANAKA , Masahiro Murayama , Takao FUJIMORI , Shinichi KOHDA
发明人： Daisuke NAKAGAWA , Yoshinori TANAKA , Masahiro Murayama , Takao FUJIMORI , Shinichi KOHDA
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01L29/2003 , H01S5/0021 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S2301/173 , H01S2301/185
摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
摘要翻译：氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

4. 发明授权

US08144743B2 Nitride based semiconductor device and fabrication method for the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08144743B2
公开(公告)日：2012-03-27
申请号：US12379945
申请日：2009-03-04
申请人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
发明人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L29/2003 , H01S5/0021 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S2301/173 , H01S2301/185
摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
摘要翻译：氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

5. 发明申请

US20070026550A1 Method of manufacturing semiconductor light emitting apparatus and semiconductor light emitting apparatus 审中-公开
标题翻译：制造半导体发光装置和半导体发光装置的方法
公开(公告)号：US20070026550A1
公开(公告)日：2007-02-01
申请号：US11483314
申请日：2006-07-06
申请人： Masahiro Murayama , Daisuke Nakagawa , Shinichi Kohda , Toshio Nishida
发明人： Masahiro Murayama , Daisuke Nakagawa , Shinichi Kohda , Toshio Nishida
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/20 , H01S5/2009 , H01S5/22 , H01S2304/12
摘要： A method of manufacturing a semiconductor light emitting apparatus according to the invention includes: the mask layer forming step of forming two mask layers in descending order of etching rates from a side near a p-type semiconductor layer; the mask layer etching step; the semiconductor layer etching step; the side etching step of selectively etching a side surface of a mask layer having a high etching rate to form a groove portion in the p-type semiconductor layer; the insulating film forming step of forming an insulating film so as to cover the p-type semiconductor layer; the mask layer removing step; and the electrode layer forming step. A semiconductor light emitting apparatus according to the invention includes: a substrate; an n-type semiconductor layer; an active layer; a p-type semiconductor layer on which a mesa portion projecting above the active layer is formed; an insulating film which covers the mesa portion to expose an upper surface of the mesa portion; and an electrode layer. Then-type semiconductor layer, the active layer, and the p-type semiconductor layer are made of a Group III nitride based compound semiconductor.
摘要翻译：根据本发明的制造半导体发光装置的方法包括：掩模层形成步骤，从p型半导体层附近的一侧以蚀刻速率的降序形成两个掩模层; 掩模层蚀刻步骤; 半导体层蚀刻步骤; 侧蚀刻步骤，选择性地蚀刻具有高蚀刻速率的掩模层的侧表面，以在p型半导体层中形成沟槽部分; 所述绝缘膜形成步骤形成绝缘膜以覆盖所述p型半导体层; 掩模层去除步骤; 和电极层形成步骤。根据本发明的半导体发光装置包括：基板; n型半导体层; 活性层形成在有源层上方突出的台面部的p型半导体层; 绝缘膜，其覆盖所述台面部，露出所述台面部的上表面; 和电极层。随后型半导体层，有源层和p型半导体层由III族氮化物基化合物半导体制成。

6. 发明授权

US5519508A Communication apparatus and method for delaying transmission to accept incoming calls 失效
标题翻译：用于延迟传输以接受来电的通信装置和方法
公开(公告)号：US5519508A
公开(公告)日：1996-05-21
申请号：US334001
申请日：1994-11-02
申请人： Masahiro Murayama
发明人： Masahiro Murayama
IPC分类号： H04M1/66 , H04M1/663 , H04M11/00 , H04N1/32
CPC分类号： H04N1/32037 , H04N1/32053
摘要： A communication apparatus detects an incoming-call during communication and rejects the incoming-call. If the apparatus detects the incoming-call during communication and rejects the incoming-call, delays calling for next transmission for a predetermined period after the current communication. If the apparatus detects the incoming-call within the predetermined period, it accepts the incoming-call. Thus, the apparatus can ensure an opportunity to accept an incoming-call without prolonging the entire communication time.
摘要翻译：通信装置在通信期间检测呼入呼叫并拒绝呼入。如果设备在通信期间检测到呼入呼叫并且拒绝呼入呼叫，则在当前通信之后的预定时段内延迟呼叫下一个传输。如果该设备在预定时段内检测到来电，它接受来电。因此，该设备可以确保接收来电而不延长整个通信时间的机会。

7. 发明授权

US5381240A Communication apparatus 失效
标题翻译：通讯设备
公开(公告)号：US5381240A
公开(公告)日：1995-01-10
申请号：US891819
申请日：1992-06-01
申请人： Masahiro Murayama
发明人： Masahiro Murayama
IPC分类号： H04L29/06 , H04N1/32 , H04N1/327 , H04N1/44 , H04Q11/04 , H04N1/00
CPC分类号： H04N1/32032 , H04N1/32005 , H04N1/32037 , H04N1/3209 , H04N1/32702 , H04N1/33369 , H04Q11/0457 , H04N2201/33364 , H04Q2213/103 , H04Q2213/171 , H04Q2213/179 , H04Q2213/251 , H04Q2213/256
摘要： A communication apparatus for performing a communication according to a predetermined communication procedure, includes a memory for storing in advance data indicating a name such as an abbreviation of each distant station to communicate with, and a controller for comparing data indicating a name of a distant station included in a received predetermined communication procedure signal with the data stored in the memory, and changing a communication procedure according to the comparison result.
摘要翻译：一种用于根据预定的通信过程执行通信的通信装置，包括：预先存储指示诸如每个遥远站的缩写之类的名称以进行通信的数据的存储器，以及用于比较指示远程站的名称的数据的控制器包含在存储在存储器中的数据的接收到的预定通信过程信号中，并根据比较结果改变通信过程。

8. 发明授权

US07476903B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07476903B2
公开(公告)日：2009-01-13
申请号：US11463910
申请日：2006-08-11
申请人： Masahiro Murayama
发明人： Masahiro Murayama
IPC分类号： H01L29/26
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/20 , H01L33/38 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S2304/12
摘要： A semiconductor light-emitting device and method for manufacturing the semiconductor light-emitting device includes a mask layer etching process on first and second mask layers provided on a Group-III nitride-based compound semiconductor substrate, the mask layer with a higher etching rate being closer to the p-type semiconductor layer; a semiconductor layer etching process; a side-etching process that selectively etches the side of the mask layer with the high etching rate to define a groove portion with a portion of the p-type semiconductor layer exposed; a ZrO2 film forming process that forms a ZrO2 film so as to cover the exposed p-type semiconductor layer; an Al2O3 film forming process that forms an Al2O3 film so as to cover the ZrO2 film; a mask layer removing process; and an electrode layer forming process. The method for manufacturing the semiconductor light-emitting device increases the yield of lift-off with respect to the p-type semiconductor layer and can produce a semiconductor light-emitting device with an improved voltage resistance.
摘要翻译：半导体发光器件及其半导体发光器件的制造方法包括对第III族氮化物系化合物半导体衬底上设置的第1掩膜层和第2掩膜层的掩模层蚀刻工序，蚀刻速度高的掩模层更靠近p型半导体层; 半导体层蚀刻工艺; 侧蚀刻工艺，其以高蚀刻速率选择性地蚀刻掩模层的侧面以限定具有暴露的p型半导体层的一部分的凹槽部分; 形成ZrO 2膜以覆盖露出的p型半导体层的ZrO 2成膜工艺; 形成Al 2 O 3膜以覆盖ZrO 2膜的Al 2 O 3膜形成工艺; 掩模层去除工艺; 和电极层形成工序。半导体发光装置的制造方法提高了相对于p型半导体层的剥离的产率，并且可以制造具有改善的耐电压性的半导体发光器件。

9. 发明申请

US20070232084A1 Manufacturing method for semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20070232084A1
公开(公告)日：2007-10-04
申请号：US11723959
申请日：2007-03-22
申请人： Masahiro Murayama
发明人： Masahiro Murayama
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/14 , H01L33/32 , H01L33/40
摘要： A manufacturing method for a semiconductor device according to the present invention includes the steps of: growing a p-type contact layer formed of a p-type GaN layer; forming an insulating film on a surface of the p-type contact layer, on which a p-side electrode is to be formed, by coating an insulating film material on the surface and thereafter baking the insulating film material; and annealing the p-type semiconductor layer in a state where the insulating film is formed on the p-type contact layer.
摘要翻译：根据本发明的半导体器件的制造方法包括以下步骤：生长由p型GaN层形成的p型接触层; 在要形成p侧电极的p型接触层的表面上通过在表面上涂覆绝缘膜材料，然后烘烤绝缘膜材料，形成绝缘膜; 以及在p型接触层上形成绝缘膜的状态下退火p型半导体层。

10. 发明授权

US06563961B1 Image processing apparatus and control method capable of rotating an original image 失效
标题翻译：能够旋转原始图像的图像处理装置和控制方法
公开(公告)号：US06563961B1
公开(公告)日：2003-05-13
申请号：US09256756
申请日：1999-02-24
申请人： Masahiro Murayama
发明人： Masahiro Murayama
IPC分类号： G06K932
CPC分类号： H04N1/3877 , H04N1/33315
摘要： The size and orientation of a document are detected by determining the length in the horizontal scanning direction and the length in the vertical scanning direction of the document to be read through a reader. According to the detection result, it is determined whether the image of the document needs to be rotated or not so as to satisfy a condition where a shortest dimension among the transmittable widths in the horizontal scanning direction, at which no part of the image is missing, occurs and the dimension in the vertical scanning direction is minimized. According to the determination result, the document image which has been read through the reader is registered in an image memory and the registered image data is read out to transmit it to a receiver through a telephone line.
摘要翻译：通过确定通过读取器读取的文档的水平扫描方向上的长度和垂直扫描方向上的长度来检测文档的尺寸和方向。根据检测结果，确定文档的图像是否需要旋转，以便满足其中没有图像的部分丢失的水平扫描方向上的可发送宽度中的最短尺寸的条件，并且垂直扫描方向上的尺寸最小化。根据确定结果，通过读取器读取的文档图像被登记在图像存储器中，并且读出登记的图像数据，以通过电话线将其发送到接收器。

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