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    • 4. 发明申请
    • Antistatic agent, antistatic film and articles coated with antistatic film
    • 抗静电剂,抗静电膜和涂有抗静电膜的物品
    • US20070181857A1
    • 2007-08-09
    • US11657550
    • 2007-01-25
    • Ayako NishiokaTakashi Ohkubo
    • Ayako NishiokaTakashi Ohkubo
    • H01B1/12
    • C09K3/16C08L65/00C09D5/24G03F7/093C08L2666/04C08L2666/22C08L2666/26
    • The object of the invention is to provide an antistatic agent exhibiting an excellent property of preventing film-thinning phenomenon and fogging in chemically amplified resists, an antistatic film using the antistatic agent and a product coated therewith.The antistatic agent comprising the water-soluble electroconductive polymer, the solvent and the water-soluble polymer. By using a water-soluble polymer, especially a water-soluble polymer compound having a polypeptide bond or a specific water-soluble polymer compound having a polyvinyl structure in combination with a water-soluble electroconductive polymer in an antistatic agent, influences on resist (such as fogging, film-thinning phenomenons and dissolution of resist after developing of resist) can be suppressed even when surfactant is added into the antistatic agent for the purpose of imparting coatability inexpensively and easily, while maintaining coatability of the agent. An antistatic agent having improved coatability by comprising surfactant may cause mixing, which leads to development defects and changes in the developing time, not only in chemically amplified resist but also in non-chemically amplified resist used for microfabrication.
    • 本发明的目的是提供一种抗静电剂,其具有防止化学放大抗蚀剂中的薄膜化现象和起雾的优异性能,使用该抗静电剂的抗静电膜和涂覆该产品的产品。 包含水溶性导电聚合物,溶剂和水溶性聚合物的抗静电剂。 通过使用水溶性聚合物,特别是具有多肽键的水溶性高分子化合物或具有聚乙烯基结构的特定水溶性高分子化合物与抗静电剂中的水溶性导电聚合物组合,对抗蚀剂(如 即使将表面活性剂添加到抗静电剂中,为了廉价且容易地赋予涂布性,同时保持试剂的涂布性,也可以抑制雾化,薄膜变稀现象和抗蚀剂显影后抗蚀剂的溶解。 通过包含表面活性剂具有改善的涂布性的抗静电剂可能引起混合,这导致显影缺陷和显影时间的变化,不仅在化学增强的抗蚀剂中,而且在用于微细加工的非化学放大抗蚀剂中。
    • 6. 发明授权
    • Method for improving sensitivity of resist
    • 提高抗蚀剂敏感性的方法
    • US08178281B2
    • 2012-05-15
    • US13059877
    • 2009-08-20
    • Hirofumi OhkiAyako NishiokaTakashi Ohkubo
    • Hirofumi OhkiAyako NishiokaTakashi Ohkubo
    • G03C5/00
    • G03F7/093G03F7/0757G03F7/168G03F7/2059Y10S430/143
    • It is an object of the present invention to improve sensitivity of a resist made from hydrosilsesquioxane when a pattern is formed in the resist by irradiation with a charged particle beam. The method for improving sensitivity of a resist of the present invention is a method to improve sensitivity of a resist formed from hydrosilsesquioxane to a charged particle beam when a pattern is formed in the resist by irradiation with a charged particle beam, and is characterized by including prebaking a resist formed from hydrosilsesquioxane and applied onto a substrate at t° C. (20≦t≦300), applying a composition containing a water-soluble conductive polymer compound to a charged particle beam irradiation surface of the prebaked resist, baking the thus applied composition at T° C. (0≦T
    • 本发明的目的是提高当用带电粒子束照射在抗蚀剂中形成图案时由氢硅倍半氧烷制成的抗蚀剂的灵敏度。 提高本发明的抗蚀剂的灵敏度的方法是当通过照射带电粒子束在抗蚀剂中形成图案时,提高由氢化硅倍半氧烷形成的抗蚀剂对带电粒子束的敏感性的方法,其特征在于包括 预烘烤由氢化倍半硅氧烷形成的抗蚀剂,并在t℃(20℃和100℃; 300℃)下涂布在基材上,将含有水溶性导电聚合物化合物的组合物涂布到预焙抗蚀剂的带电粒子束照射表面上, (0≦̸ T
    • 7. 发明申请
    • METHOD FOR IMPROVING SENSITIVITY OF RESIST
    • 提高耐药敏感性的方法
    • US20110143283A1
    • 2011-06-16
    • US13059877
    • 2009-08-20
    • Hirofumi OhkiAyako NishiokaTakashi Ohkubo
    • Hirofumi OhkiAyako NishiokaTakashi Ohkubo
    • G03F7/20
    • G03F7/093G03F7/0757G03F7/168G03F7/2059Y10S430/143
    • It is an object of the present invention to improve sensitivity of a resist made from hydrosilsesquioxane when a pattern is formed in the resist by irradiation with a charged particle beam. The method for improving sensitivity of a resist of the present invention is a method to improve sensitivity of a resist formed from hydrosilsesquioxane to a charged particle beam when a pattern is formed in the resist by irradiation with a charged particle beam, and is characterized by including prebaking a resist formed from hydrosilsesquioxane and applied onto a substrate at t° C. (20≦t≦300), applying a composition containing a water-soluble conductive polymer compound to a charged particle beam irradiation surface of the prebaked resist, baking the thus applied composition at T° C. (0≦T
    • 本发明的目的是提高当用带电粒子束照射在抗蚀剂中形成图案时由氢硅倍半氧烷制成的抗蚀剂的灵敏度。 提高本发明的抗蚀剂的灵敏度的方法是当通过照射带电粒子束在抗蚀剂中形成图案时,提高由氢化硅倍半氧烷形成的抗蚀剂对带电粒子束的敏感性的方法,其特征在于包括 预烘烤由氢化倍半硅氧烷形成的抗蚀剂,并在t℃(20℃和100℃; 300℃)下涂布在基材上,将含有水溶性导电聚合物化合物的组合物涂布到预焙抗蚀剂的带电粒子束照射表面上, (0≦̸ T
    • 8. 发明申请
    • Composition for polishing metal, polishing metod for metal layer, and production method for wafer
    • 用于抛光金属的组合物,金属层的抛光及其制造方法
    • US20060042502A1
    • 2006-03-02
    • US10532966
    • 2003-10-31
    • Takashi SatoAyako NishiokaNovuo Uotani
    • Takashi SatoAyako NishiokaNovuo Uotani
    • C09G1/08
    • C09G1/14C09G1/02H01L21/3212
    • A metal polishing composition is used for polishing a metal layer and comprises a film forming compound which polymerizes on a surface of the metal layer, forming a polymer film on the surface of the metal layer. A polishing method for the metal layer comprises a step of polishing and planarizing the metal layer using the metal polishing composition. A production method for a wafer comprises a step of polishing and planarizing a metal layer which is formed on top of a wafer that contains recesses so as to fill and cover the recesses, by the polishing method for a metal layer. According to the composition and polishing method, dishing is prevented to improve the planarity, and the polishing rate for polishing metal layers, and particularly copper layers, is improved, enabling high speed polishing at low pressure. Furthermore, because scratching of the metal layer is also prevented, the yield improves.
    • 金属抛光组合物用于抛光金属层,并且包括在金属层的表面上聚合的成膜化合物,在金属层的表面上形成聚合物膜。 金属层的抛光方法包括使用金属抛光组合物抛光和平坦化金属层的步骤。 用于晶片的制造方法包括通过金属层的抛光方法来研磨和平面化金属层的步骤,该金属层形成在包含凹部的晶片顶部以填充和覆盖凹部。 根据组成和抛光方法,防止了凹陷以提高平面度,并且提高了用于研磨金属层,特别是铜层的抛光速率,使得能够在低压下进行高速抛光。 此外,由于也防止了金属层的划伤,所以产率提高。