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1. 发明申请

US20100326349A1 METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, APPARATUS FOR PULLING SILICON SINGLE CRYSTAL AND VITREOUS SILICA CRUCIBLE 有权
标题翻译：制造硅单晶的方法，用于拉丝硅单晶和维生素二氧化硅的装置
公开(公告)号：US20100326349A1
公开(公告)日：2010-12-30
申请号：US12786911
申请日：2010-05-25
申请人： Masanori FUKUI , Hideki WATANABE , Nobumitsu TAKASE
发明人： Masanori FUKUI , Hideki WATANABE , Nobumitsu TAKASE
IPC分类号： C30B15/20 , C30B15/16 , C30B15/10
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06
摘要： Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a long time and decrease of impurity concentration of a silicon single crystal can be expected. A method for manufacturing a silicon single crystal is provided. The method includes: detecting touching status of a seed crystal at silicon melt by supplying voltage V1 using a crucible side as a negative electrode and a wire side as a positive electrode and by monitoring change of the voltage, when the seed crystal provided at a front end of the wire touches the silicon melt inside a vitreous silica crucible; devitrifying an inner surface of the vitreous silica crucible as supplying voltage V2 using the crucible side as a positive electrode and the wire side as a negative electrode during a temperature control period; and growing a silicon single crystal by slowly pulling the seed crystal as supplying voltage V3 using the crucible side as a negative electrode and the wire side as a positive electrode after the temperature control period.
摘要翻译：监测硅熔体的泄漏，并检测硅熔体中的晶种的接触，此外，长时间拉伸和降低硅单晶的杂质浓度可以耐久的石英玻璃坩埚的增强可以是预期。提供了制造硅单晶的方法。该方法包括：通过使用坩埚侧作为负极并且线侧作为正极来提供电压V1，并通过监视电压的变化来检测硅熔体处的晶种的触摸状态导线的末端触及石英玻璃坩埚内的硅熔体; 在温度控制期间，使用坩埚侧作为正极而将作为负极的线侧作为供给电压V2而使玻璃状石英玻璃坩埚的内表面失透; 并且通过在坩埚侧作为负极并且在温度控制周期之后将线侧作为正极，通过缓慢地拉晶晶体作为供给电压V3来生长硅单晶。

2. 发明申请

US20090260564A1 Method for growing silicon single crystal 审中-公开
标题翻译：生长硅单晶的方法
公开(公告)号：US20090260564A1
公开(公告)日：2009-10-22
申请号：US12385730
申请日：2009-04-17
申请人： Yasuhiro SAITO , Nobumitsu TAKASE
发明人： Yasuhiro SAITO , Nobumitsu TAKASE
IPC分类号： C30B15/00
CPC分类号： C30B29/06 , C30B15/20 , C30B15/36
摘要： A method for growing silicon single crystal by the CZ method, namely by feeding silicon materials for crystal into a crucible to melt the materials, and growing a silicon single crystal on the lower end of the seed crystal, comprises: forming a narrowingly tapered portion with a gradually decreased seed crystal diameter by pulling up the seed crystal inserted in the melt; and providing increased or decreased neck diameter regions in the process of forming a neck in such a manner that each increased neck diameter is provided by increasing the neck diameter, followed by reverting the neck diameter to the original diameter, or alternatively, each decreased neck diameter region is provided by decreasing the neck diameter, followed by reverting the diameter to the original diameter, thereby enabling to reliably eliminate dislocations remaining in the central axial region of the neck in the step of necking. When the neck diameter is increased or decreased at the final stage in the process of forming the neck, dislocations can be eliminated more efficiently.
摘要翻译：通过CZ方法生长硅单晶的方法，即通过将晶体的硅材料供入到坩埚中以熔化材料，并在晶种的下端生长硅单晶，包括：形成具有窄的锥形部分，通过拉起插入熔体中的晶种逐渐降低晶种直径; 并且在形成颈部的过程中提供增加或减小的颈部直径区域，使得每个增加的颈部直径通过增加颈部直径来提供，随后将颈部直径恢复到原始直径，或者可选地，每个减小的颈部直径通过减小颈部直径来提供区域，然后将直径恢复到原始直径，从而能够可靠地消除在颈缩步骤中残留在颈部的中心轴向区域中的位错。当颈部直径在形成颈部的过程中的最后阶段增加或减少时，可以更有效地消除位错。

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