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1. 发明申请

US20050014325A1 Point contact array, not circuit, and electronic circuit comprising the same 有权
标题翻译：点接触阵列，不是电路和包括它的电子电路
公开(公告)号：US20050014325A1
公开(公告)日：2005-01-20
申请号：US10918360
申请日：2004-08-16
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： G11C11/56 , G11C13/02 , G11C16/02 , H01L27/24 , H01L27/28 , H01L29/24 , H01L29/26 , H01L29/45 , H01L51/00 , H01L51/30 , H03K19/02 , H01L21/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.
摘要翻译：使用用作双端子器件的原子开关实现的NOT电路，并且包括由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极。 Ag2S，Ag2Se，Cu2S或Cu2Se优选用作复合导电材料。

2. 发明申请

US20050243844A1 Point contact array, not circuit, and electronic circuit using the same 有权
标题翻译：点触点阵列，不是电路，而电子电路使用相同
公开(公告)号：US20050243844A1
公开(公告)日：2005-11-03
申请号：US11165037
申请日：2005-06-24
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： G11C11/56 , G11C13/02 , G11C16/02 , H01L27/24 , H01L27/28 , H01L29/24 , H01L29/26 , H01L29/45 , H01L51/00 , H01L51/30 , H03K19/02 , H04L12/28 , H04L12/56
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0
摘要翻译：提供了一种点接触阵列，其中布置有多个点触点，每个点接触电和可逆地控制电极之间的电导并且可应用于运算电路，逻辑电路和存储器件，NOT电路和使用该电路的电子电路。电路包括多个点接点，每个点接触由由具有离子导电性和电子传导性的复合导电材料制成的第一电极和由导电物质制成的第二电极组成。控制每个点接触的电导以实现电路。优选使用Ag 2 S，Ag 2 Se，Cu 2 S或Cu 2 Se作为化合物导电材料。当在电极之间插入半导体或绝缘体材料时，可以使用GeS x X，Ge x O x Ge，GeTe x x，或优选使用WO x（0

3. 发明授权

US06608306B1 Scanning tunneling microscope, its probe, processing method for the probe and production method for fine structure 失效
标题翻译：扫描隧道显微镜，其探头，探针加工方法及精细结构的生产方法
公开(公告)号：US06608306B1
公开(公告)日：2003-08-19
申请号：US09743202
申请日：2001-01-08
申请人： Masakazu Aono , Tomonobu Nakayama , Kazuya Terabe
发明人： Masakazu Aono , Tomonobu Nakayama , Kazuya Terabe
IPC分类号： G01N1312
CPC分类号： B82B3/00 , G01Q60/16 , Y10S977/861 , Y10S977/869 , Y10S977/875 , Y10S977/879
摘要： The invention provides a probe for use with a scanning tunneling microscope, a method of treating the probe, and a method of fabricating a nano-structure, which facilitates formation of a continuous nano-structure. The probe for the scanning tunneling microscope is formed of an Ag2S crystal having both ion conductivity and electron conductivity. Voltage and tunnel current are applied between the probe and a substrate in order to move movable Ag ions to thereby grow, on the tip end of the probe, a projection (mini chip) composed of Ag ions or Ag atoms. The polarity of the applied voltage is reversed after the growth of the projection in order to return the Ag ions or Ag atoms constituting the grown projection (mini chip) into the Ag2S crystal to thereby contract the projection. Thus, the probe can have a projection composed of Ag ions or Ag atoms and a regulated shape. Further, the movable ions or atoms of the mixed-conductive material are transferred onto the substrate so as to form a nano-structure on the substrate.
摘要翻译：本发明提供了一种用于扫描隧道显微镜的探针，一种处理该探针的方法，以及一种有助于形成连续纳米结构的纳米结构的制造方法。用于扫描隧道显微镜的探针由具有离子传导性和电子传导性的Ag 2 S晶体形成。电压和隧道电流施加在探针和衬底之间，以移动可移动的Ag离子，从而在探针的尖端上生长由Ag离子或Ag原子组成的突起（微型芯片）。在投影生长之后，施加电压的极性反转，以将构成生长的突起（微型芯片）的Ag离子或Ag原子返回到Ag2S晶体中，从而使投影收缩。因此，探针可以具有由Ag离子或Ag原子组成的突起和调节形状。此外，将混合导电材料的可移动离子或原子转移到衬底上，以在衬底上形成纳米结构。

4. 发明授权

US06833719B2 Apparatus for evaluating electrical characteristics 失效
标题翻译：用于评估电气特性的装置
公开(公告)号：US06833719B2
公开(公告)日：2004-12-21
申请号：US10148900
申请日：2002-06-19
申请人： Tsuyoshi Hasegawa , Masakazu Aono , Tomonobu Nakayama , Taichi Okuda , Kazuya Terabe , Hirofumi Tanaka
发明人： Tsuyoshi Hasegawa , Masakazu Aono , Tomonobu Nakayama , Taichi Okuda , Kazuya Terabe , Hirofumi Tanaka
IPC分类号： G01R3102
CPC分类号： G01Q60/40 , G01Q60/04 , G01R1/06727 , G01R1/06738 , Y10S977/874
摘要： An apparatus provided for evaluating electrical characteristics by bringing a plurality of metal probes in contact with a sample. A metal probe is formed on a free end of a cantilever on which are formed a resistor, two electrodes for resistance detection, and an electrode for measuring electrical characteristics. A tip of the metal probe projects beyond the free end of the cantilever. The probe position is controlled by an atomic force microscopy.
摘要翻译：一种用于通过使多个金属探针与样品接触来评估电特性的装置。金属探针形成在悬臂的自由端上，其上形成电阻器，两个用于电阻检测的电极和用于测量电特性的电极。金属探针的尖端超出悬臂的自由端。探针位置由原子力显微镜控制。

5. 发明授权

US07473982B2 Point contact array, not circuit, and electronic circuit comprising the same 有权
标题翻译：点接触阵列，不是电路和包括它的电子电路
公开(公告)号：US07473982B2
公开(公告)日：2009-01-06
申请号：US10918360
申请日：2004-08-16
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： H01L27/24
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.
摘要翻译：使用用作双端子器件的原子开关实现的NOT电路，并且包括由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极。 Ag2S，Ag2Se，Cu2S或Cu2Se优选用作复合导电材料。

6. 发明授权

US07026911B2 Point contact array, not circuit, and electronic circuit comprising the same 有权
标题翻译：点接触阵列，不是电路和包括它的电子电路
公开(公告)号：US07026911B2
公开(公告)日：2006-04-11
申请号：US10363259
申请日：2001-10-29
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： H01C1/012
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： A point contact array, including plural point contacts electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, a memory device, a NOT circuit, and an electronic circuit including the same. The circuit includes plural point contacts each including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0
摘要翻译：一种点接触阵列，包括多个点接点，电和可逆地控制电极之间的电导，并且可应用于运算电路，逻辑电路，存储器件，NOT电路和包括其的电子电路。该电路包括多个点接点，每个接点包括由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极。控制每个点接触的电导以实现电路。优选使用Ag 2 S，Ag 2 Se，Cu 2 S或Cu 2 Se作为化合物导电材料。当在电极之间插入半导体或绝缘体材料时，可以使用GeS x X，Ge x O x Ge，GeTe x x，或优选使用WO x（0

7. 发明授权

US06891186B2 Electronic device having controllable conductance 有权
标题翻译：具有可控电导的电子装置
公开(公告)号：US06891186B2
公开(公告)日：2005-05-10
申请号：US10363479
申请日：2001-08-30
申请人： Masakazu Aono , Kazuya Terabe , Tsuyoshi Hasegawa , Tomonobu Nakayama
发明人： Masakazu Aono , Kazuya Terabe , Tsuyoshi Hasegawa , Tomonobu Nakayama
IPC分类号： H01L29/06 , G11C13/02 , H01L29/80 , H01L45/00 , H01L49/00 , H01L21/44
CPC分类号： H01L45/1266 , G11C13/02 , H01L45/085 , H01L45/1226 , H01L49/006
摘要： This invention provides a method for constructing bridge including fine wires or point contacts producing a quanitized inter-electrode conductance, and provides a method for easily controlling the conductance of this bridge. Further, it aims to provide an electronic element using conductance control due to the bridge, fine wire or point contact formed between the electrodes. These objects are accomplied with an electronic element comprising a first electrode comprising a mixed electroconducting material having ion conductance and electron conductance, and a second electrode comprising an electroconducting substance, wherein the inter-electric conductance can be controlled. In another aspect, this invention is an electronic element formed by a bridge between electrodes, by applying a voltage between the electrodes so that the second electrode is negative with respect to the first electrode and movable ions migrate from the first electrode to the second electrode. In a third aspect, this invention is a method of controlling inter-electrode conductance comprising at least one of applying a voltage between the electrodes of the above electronic element so that the second electrode is negative with respect to the first electrode so that a bridge is formed between the electrodes due to the migration of movable ions from the first electrode to the second electrode, and reversing the inter-electrode polarity so that the bridge is thinned or disconnected.
摘要翻译：本发明提供一种用于构造包括精细线或点接触的桥的方法，其产生电化学电极间的电导率，并且提供了一种容易控制该桥的电导的方法。此外，其目的在于提供一种电子元件，其由于在电极之间形成的桥，细线或点接触而使用电导控制。这些目的是通过电子元件实现的，该电子元件包括具有离子传导性和电子传导性的混合导电材料的第一电极和包含导电物质的第二电极，其中可以控制电导率。在另一方面，本发明是通过在电极之间的桥接形成的电子元件，通过在电极之间施加电压使得第二电极相对于第一电极为负极，并且可移动离子从第一电极迁移到第二电极。在第三方面，本发明是一种控制电极间电导的方法，包括以下步骤中的至少一种：在上述电子元件的电极之间施加电压，使得第二电极相对于第一电极为负极，由于可移动离子从第一电极迁移到第二电极而形成在电极之间，并且使电极间极性反转，使得桥变薄或断开。

8. 发明授权

US07875883B2 Electric device using solid electrolyte 有权
标题翻译：电器使用固体电解质
公开(公告)号：US07875883B2
公开(公告)日：2011-01-25
申请号：US10490598
申请日：2002-09-24
申请人： Toshitsugu Sakamoto , Masakazu Aono , Tsuyoshi Hasegawa , Tomonobu Nakayama , Kazuya Terabe , Hisao Kawaura , Tadahiko Sugibayashi
发明人： Toshitsugu Sakamoto , Masakazu Aono , Tsuyoshi Hasegawa , Tomonobu Nakayama , Kazuya Terabe , Hisao Kawaura , Tadahiko Sugibayashi
IPC分类号： H01L29/06
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/72 , G11C2213/77 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/142 , H01L45/16 , H01L45/1633
摘要： The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.
摘要翻译：本发明涉及用于选择存储单元的晶体管和使用固体电解质的开关。在存储单元中，在形成在半导体衬底表面上的场效应晶体管的漏极扩散层上堆叠金属。使用金属作为载体的固体电解质堆叠在金属上。固体电解质通过间隙与金属接触，并且金属连接到公共接地导体。场效应晶体管的源极连接到列地址线，并且场效应晶体管的栅极连接到行地址线。

9. 发明授权

US07525410B2 Point contact array, not circuit, and electronic circuit using the same 有权
标题翻译：点接触阵列，不是电路和使用电子电路
公开(公告)号：US07525410B2
公开(公告)日：2009-04-28
申请号：US11165037
申请日：2005-06-24
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： H01H9/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same.A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0
摘要翻译：提供了一种点接触阵列，其中布置有多个点触点，每个点接触电和可逆地控制电极之间的电导并且可应用于运算电路，逻辑电路和存储器件，NOT电路和使用该电路的电子电路。电路包括多个点接点，每个点接触由由具有离子导电性和电子传导性的复合导电材料制成的第一电极和由导电物质制成的第二电极组成。控制每个点接触的电导以实现电路。 Ag2S，Ag2Se，Cu2S或Cu2Se优选用作复合导电材料。当在电极之间插入半导体或绝缘体材料时，优选使用GeSx，GeSex，GeTex或WOx（0

10. 发明授权

US08896033B2 Electrochemical transistor 有权
标题翻译：电化学晶体管
公开(公告)号：US08896033B2
公开(公告)日：2014-11-25
申请号：US13816584
申请日：2011-09-08
申请人： Tsuyoshi Hasegawa , Masakazu Aono , Kazuya Terabe , Tohru Tsuruoka , Yaomi Itoh
发明人： Tsuyoshi Hasegawa , Masakazu Aono , Kazuya Terabe , Tohru Tsuruoka , Yaomi Itoh
IPC分类号： G01N27/403 , H01L29/66 , H01L27/148 , H01L45/00 , G11C13/00 , H01L29/78 , G11C13/02
CPC分类号： H01L29/78 , G11C13/0007 , G11C13/0009 , G11C13/0011 , G11C13/02 , G11C14/00 , G11C2213/11 , G11C2213/32 , G11C2213/52 , G11C2213/53 , H01L45/085 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： The object of the invention is to provide a three-terminal switch (electrochemical transistor) capable of achieving sharp on-off operation.A source electrode and a drain electrode are juxtaposed with an insulator interposed between them, and on the assembly there is an ion diffusion member such as Ta2O5 located. On the opposite surface of the ion diffusion member, there is a gate electrode located that is capable of supplying metal ions such as copper ions. By application of voltage to the gate electrode, the metal ions going out of the gate electrode are reversibly precipitated as metal on both source and drain electrodes as well as on the insulator near them, thereby controlling conduction and non-conduction between the source electrode and the drain electrode.
摘要翻译：本发明的目的是提供一种能够实现尖锐开关操作的三端开关（电化学晶体管）。源电极和漏电极与介于它们之间的绝缘体并置，并且在组件上存在诸如Ta 2 O 5的离子扩散部件。在离子扩散部件的相对表面上，设置能够供给铜离子等金属离子的栅电极。通过向栅电极施加电压，从栅极电极出来的金属离子可以在源电极和漏极两者以及绝缘体附近作为金属可逆地析出，从而控制源电极与源电极之间的导通和非导通漏电极。

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