会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • LDPC MULTI-DECODER ARCHITECTURES
    • LDPC多解码器架构
    • WO2012097046A1
    • 2012-07-19
    • PCT/US2012/020910
    • 2012-01-11
    • MARVELL WORLD TRADE LTD.VARNICA, NedeljkoBURD, Gregory
    • VARNICA, NedeljkoBURD, Gregory
    • H03M13/37H03M13/11
    • H03M13/1108H03M13/1117H03M13/1128H03M13/1131H03M13/1137H03M13/116H03M13/2909H03M13/3707
    • Systems, methods, and other embodiments associated with LDPC decoder architectures are described. According to one embodiment, an apparatus includes a super-parity-check matrix. The super matrix corresponds to at least a portion of a low density parity check (LDPC) code matrix. The super-parity-check matrix is coupled to a high throughput LDPC decoder and a low throughput LDPC decoder. The super-parity- check matrix includes n parity check matrices. The parity check matrices include x rows corresponding to x check node processing elements and y columns corresponding to y bit node processing elements. Thus, the super-parity-check matrix comprises nx rows corresponding to nx check node processing elements and ny columns corresponding to ny bit node processing elements. The numbers n, x, and y are selected so that ny codeword bits corresponding to the super-parity-check matrix can be processed in single time unit by the high throughput decoder and y codeword bits corresponding to the super-parity- check matrix can be processed in a single time unit by the low throughput decoder.
    • 描述了与LDPC解码器架构相关联的系统,方法和其他实施例。 根据一个实施例,一种装置包括超奇偶校验矩阵。 超矩阵对应于低密度奇偶校验(LDPC)码矩阵的至少一部分。 超奇偶校验矩阵耦合到高吞吐量LDPC解码器和低吞吐量LDPC解码器。 超奇偶校验矩阵包括n个奇偶校验矩阵。 奇偶校验矩阵包括对应于x校验节点处理元素的x行和对应于y位节点处理元素的y列。 因此,超奇偶校验矩阵包括对应于n×校验节点处理元素的nx行和对应于ny位节点处理元素的ny列。 选择数字n,x和y,使得与超奇偶校验矩阵相对应的ny码字比特可以由高吞吐量解码器以及对应于超奇偶校验矩阵的y码字比特以单个时间单位处理 由低吞吐量解码器以单个时间单位进行处理。
    • 2. 发明申请
    • GENERATING POSITION ERROR SIGNAL BASED ON DATA TRACKS FOR MAGNETIC DATA STORAGE
    • 基于数据轨迹生成磁位数据存储的位置误差信号
    • WO2015048677A1
    • 2015-04-02
    • PCT/US2014/058116
    • 2014-09-29
    • MARVELL WORLD TRADE LTD.OBERG, MatsBURD, Gregory
    • OBERG, MatsBURD, Gregory
    • G11B5/55G11B5/596
    • G11B5/59622G11B5/5547G11B5/59611G11B5/59627G11B5/5965G11B20/10212G11B20/10305
    • A hard disk drive circuit includes first and second inter-track interference detection modules. The first inter-track interference detection module is configured to generate a first measured inter-track interference value based on a first read signal from a first read sensor positioned over a magnetic medium. The second inter-track interference detection module is configured to generate a second measured inter-track interference value based on a second read signal from a second read sensor positioned over the magnetic medium. A position error signal generation module is configured to generate a position error signal based on the first measured inter-track interference value and the second measured inter-track interference value. An arm control module is configured to control rotation of an arm in response to the position error signal. The first read sensor and the second read sensor are located at a distal end of the arm.
    • 硬盘驱动器电路包括第一和第二轨道间干扰检测模块。 第一轨道间干扰检测模块被配置为基于来自位于磁介质上的第一读取传感器的第一读取信号来生成第一测量的轨道间干扰值。 第二轨道间干扰检测模块被配置为基于来自位于磁介质上的第二读取传感器的第二读取信号来生成第二测量的轨道间干扰值。 位置误差信号生成模块被配置为基于第一测量的轨道间干扰值和第二测量的轨道间干扰值来生成位置误差信号。 臂控制模块被构造成响应于位置误差信号来控制臂的旋转。 第一读取传感器和第二读取传感器位于手臂的远端。
    • 4. 发明申请
    • MAPPING DATA TO NON-VOLATILE MEMORY
    • 将数据映射到非易失性存储器
    • WO2012106255A1
    • 2012-08-09
    • PCT/US2012/023165
    • 2012-01-30
    • MARVELL WORLD TRADE LTD.CHILAPPAGARI, Shashi KiranYANG, XueshiBURD, Gregory
    • CHILAPPAGARI, Shashi KiranYANG, XueshiBURD, Gregory
    • G11C11/56G11C16/10G11C16/34
    • G06F12/0246G06F2212/7201G11C11/5621G11C16/10G11C16/34
    • The present disclosure includes systems and techniques relating to non-volatile memory. A described system, for example, includes a non-volatile memory structure that includes a plurality of multi- level memory cells. The described system includes a controller configured to map a data segment to the plurality of multi -level memory cells. A first portion of a first set of consecutive bits of a data segment (sector 1) is mapped to a first page (LSBpage) associated with the plurality of multi -level memory cells. A second portion of the first set of consecutive bits of the data segment (sectorl) is mapped to a second page (MSB page) associated with the plurality of multi -level memory cells. A first portion of a second set of consecutive bits of the data segment (sector2) is mapped to the first page. A second portion of the second set of consecutive bits of the data segment is mapped to the second page. The first page is associated with bits of a first significance (LSB), and the second page is associated with bits of a second significance (MSB).
    • 本公开包括与非易失性存储器有关的系统和技术。 所描述的系统例如包括包括多个多级存储器单元的非易失性存储器结构。 所描述的系统包括被配置为将数据段映射到多个多层存储器单元的控制器。 数据段(扇区1)的第一组连续位的第一部分被映射到与多个多层存储器单元相关联的第一页(LSB页)。 数据段(扇区1)的第一组连续位的第二部分被映射到与多个多层存储器单元相关联的第二页(MSB页)。 数据段(扇区2)的第二组连续位的第一部分被映射到第一页。 数据段的第二组连续位的第二部分被映射到第二页。 第一页与第一有效位(LSB)的位相关联,并且第二页与第二有效位(MSB)的位相关联。
    • 5. 发明申请
    • ADAPTIVE READ AND WRITE SYSTEMS AND METHODS FOR MEMORY CELLS
    • 用于记忆细胞的自适应读取和写入系统和方法
    • WO2008058082A2
    • 2008-05-15
    • PCT/US2007/083649
    • 2007-11-05
    • MARVELL WORLD TRADE LTD.YANG, XueshiBURD, Gregory
    • YANG, XueshiBURD, Gregory
    • G11C16/10G11C11/5628G11C11/5642G11C16/28G11C2211/5634
    • Adaptive memory read and write systems and methods are described herein that adapts to changes to threshold voltage distributions of memory cells as of result of, for example, the detrimental affects of repeated cycling operations of the memory cells. The novel systems may include at least multi-level memory cells, which may be multi-level flash memory cells, and a computation block operatively coupled to the multi-level memory cells. The computation block may be configured to compute optimal or near optimal mean and detection threshold values based, at least in part, on estimated mean and standard deviation values of level distributions of the multi-level memory cells. The optimal or near optimal mean and detection threshold values computed by the computation block may be subsequently used to facilitate writing and reading, respectively, of data to and from the multi-level memory cells.
    • 本文描述了自适应存储器读写系统和方法,其适应于存储器单元的阈值电压分布的变化,例如由于存储器单元的重复循环操作的有害影响。 该新颖系统可以包括至少多级存储器单元,其可以是多级闪存单元,以及可操作地耦合到多级存储器单元的计算块。 该计算块可以被配置为至少部分地基于多级存储器单元的级别分布的估计平均值和标准偏差值来计算最佳或近似最优的平均值和检测阈值。 随后可以使用由计算块计算的最佳或接近最优的平均值和检测阈值,以便于分别向多层存储器单元写入和读取数据。
    • 9. 发明申请
    • METHOD AND APPARATUS FOR DETERMINING POSITION OF MULTIPLE DRIVE HEADS
    • 用于确定多个驱动头的位置的方法和装置
    • WO2015047730A1
    • 2015-04-02
    • PCT/US2014/054964
    • 2014-09-10
    • MARVELL WORLD TRADE LTD.OBERG, MatsZOU, QiyueBURD, Gregory
    • OBERG, MatsZOU, QiyueBURD, Gregory
    • G11B5/596G11B5/48G11B5/55
    • G11B5/59627G11B5/4886G11B5/553G11B5/59683
    • Determining the radial position of a first read head of a storage device includes reading servo data from a storage media platter surface using the first read head, deriving from that servo data a first position error signal representing a first estimate of the radial position of the first read head, reading the servo data from the storage media platter surface using a different read head, deriving from that servo data a second position error signal representing an estimate of the radial position of the different read head, and combining the first estimate of the radial position of the first read head and the estimate of the radial position of the different read head to obtain a revised estimate of the radial position of the first read head. The combining could include taking account of a known positional offset between the first read head and the different read head.
    • 确定存储设备的第一读取头的径向位置包括使用第一读取头从存储介质盘表面读取伺服数据,从该伺服数据中导出第一位置误差信号,该第一位置误差信号表示第一读取头的径向位置的第一估计 读取头,使用不同的读取头从存储介质盘表面读取伺服数据,从该伺服数据导出表示不同读取头的径向位置的估计的第二位置误差信号,以及组合径向的第一估计 第一读取头的位置和不同读取头的径向位置的估计,以获得第一读取头的径向位置的修正估计。 组合可以包括考虑在第一读头和不同读头之间已知的位置偏移。