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1. 发明授权

US07727809B2 Attachment method, attachment apparatus, manufacturing method of semiconductor device, and manufacturing apparatus of semiconductor device 失效
标题翻译：附件方法，附件装置，半导体装置的制造方法以及半导体装置的制造装置
公开(公告)号：US07727809B2
公开(公告)日：2010-06-01
申请号：US11798979
申请日：2007-05-18
申请人： Kyosuke Ito , Osamu Nakamura , Yukie Suzuki
发明人： Kyosuke Ito , Osamu Nakamura , Yukie Suzuki
IPC分类号： H01L21/00
CPC分类号： H01L23/4985 , G06K19/07718 , H01L21/6835 , H01L23/49855 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01046 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12044 , H01L2924/13091 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The invention proposes a method and an apparatus for attaching a plurality of components having different arrangement densities or arrangement intervals, which can achieve shorter takt time. An object is to provide a low-cost manufacturing method of a semiconductor device and a manufacturing apparatus capable of manufacturing a semiconductor device at low cost. Plural pairs of components having different arrangement densities are simultaneously attached to each other by temporarily attaching first components to a first flexible substrate while changing an arrangement interval in an X direction, and then connecting the first components to second components over a second flexible substrate while changing an arrangement interval of the first components in a Y direction.
摘要翻译：本发明提出了一种用于安装具有不同布置密度或排列间隔的多个部件的方法和装置，其可以实现更短的打印时间。本发明的目的是提供一种能够以低成本制造半导体器件的半导体器件和制造装置的低成本制造方法。具有不同排列密度的多组成分通过将第一组分暂时地附着到第一柔性衬底上同时附着，同时改变X方向上的排列间隔，然后在第二柔性衬底上将第一组分连接到第二组分上，同时改变 Y方向上的第一分量的排列间隔。

2. 发明申请

US20070281391A1 Attachment method, attachment apparatus, manufacturing method of semiconductor device, and manufacturing apparatus of semiconductor device 失效
标题翻译：附件方法，附件装置，半导体装置的制造方法以及半导体装置的制造装置
公开(公告)号：US20070281391A1
公开(公告)日：2007-12-06
申请号：US11798979
申请日：2007-05-18
申请人： Kyosuke Ito , Osamu Nakamura , Yukie Suzuki
发明人： Kyosuke Ito , Osamu Nakamura , Yukie Suzuki
IPC分类号： H01L21/00
CPC分类号： H01L23/4985 , G06K19/07718 , H01L21/6835 , H01L23/49855 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01046 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12044 , H01L2924/13091 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The invention proposes a method and an apparatus for attaching a plurality of components having different arrangement densities or arrangement intervals, which can achieve shorter takt time. An object is to provide a low-cost manufacturing method of a semiconductor device and a manufacturing apparatus capable of manufacturing a semiconductor device at low cost. Plural pairs of components having different arrangement densities are simultaneously attached to each other by temporarily attaching first components to a first flexible substrate while changing an arrangement interval in an X direction, and then connecting the first components to second components over a second flexible substrate while changing an arrangement interval of the first components in a Y direction.
摘要翻译：本发明提出了一种用于安装具有不同布置密度或排列间隔的多个部件的方法和装置，其可以实现更短的打印时间。本发明的目的是提供一种能够以低成本制造半导体器件的半导体器件和制造装置的低成本制造方法。具有不同排列密度的多组成分通过将第一组分暂时地附着到第一柔性衬底上同时附着，同时改变X方向上的排列间隔，然后在第二柔性衬底上将第一组分连接到第二组分上，同时改变 Y方向上的第一分量的排列间隔。

3. 发明授权

US08201329B2 Apparatus and method for manufacturing semiconductor device 有权
标题翻译：半导体器件制造装置及方法
公开(公告)号：US08201329B2
公开(公告)日：2012-06-19
申请号：US12792812
申请日：2010-06-03
申请人： Osamu Nakamura , Kyosuke Ito
发明人： Osamu Nakamura , Kyosuke Ito
IPC分类号： H01R43/00 , H05K13/00 , H01L21/00 , H01L21/64
CPC分类号： H05K13/0478 , H01L24/75 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05572 , H01L2224/16225 , H01L2224/81192 , H01L2224/81815 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/07811 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , Y10T29/41 , Y10T29/49018 , Y10T29/4913 , Y10T29/49169 , H01L2924/00 , H01L2224/81 , H01L2224/05599
摘要： The manufacturing apparatus of a semiconductor device includes a jig having a plurality of holders arranged in a row, a controller for controlling the pitch of the plurality of holders arranged in a row, a support means provided with a plurality of semiconductor integrated circuits, and a support means provided with a substrate having a plurality of elements. By mounting the semiconductor integrated circuits on the respective elements by using the jig having the plurality of holders arranged in a row, semiconductor devices are manufactured.
摘要翻译：半导体器件的制造装置包括：具有排列成一列的多个保持器的夹具，用于控制排列成一列的多个保持器的间距的控制器，设置有多个半导体集成电路的支撑装置，以及支撑装置设置有具有多个元件的基板。通过使用具有排成行的多个保持器的夹具将半导体集成电路安装在各个元件上，制造半导体器件。

4. 发明申请

US20070183184A1 Apparatus and method for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件制造装置及方法
公开(公告)号：US20070183184A1
公开(公告)日：2007-08-09
申请号：US11655173
申请日：2007-01-19
申请人： Osamu Nakamura , Kyosuke Ito
发明人： Osamu Nakamura , Kyosuke Ito
IPC分类号： G11C11/24
CPC分类号： H05K13/0478 , H01L24/75 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05572 , H01L2224/16225 , H01L2224/81192 , H01L2224/81815 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/07811 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , Y10T29/49018 , Y10T29/4913 , Y10T29/49169 , H01L2924/00 , H01L2224/81 , H01L2224/05599
摘要： The manufacturing apparatus of a semiconductor device includes a jig having a plurality of holders arranged in a row, a controller for controlling the pitch of the plurality of holders arranged in a row, a support means provided with a plurality of semiconductor integrated circuits, and a support means provided with a substrate having a plurality of elements. By mounting the semiconductor integrated circuits on the respective elements by using the jig having the plurality of holders arranged in a row, semiconductor devices are manufactured.
摘要翻译：半导体器件的制造装置包括：具有排列成一列的多个保持器的夹具，用于控制排列成一列的多个保持器的间距的控制器，设置有多个半导体集成电路的支撑装置，以及支撑装置设置有具有多个元件的基板。通过使用具有排成行的多个保持器的夹具将半导体集成电路安装在各个元件上，制造半导体器件。

5. 发明授权

US07125137B2 Light-emitting unit 失效
标题翻译：发光单元
公开(公告)号：US07125137B2
公开(公告)日：2006-10-24
申请号：US10856532
申请日：2004-05-28
申请人： Shigemasa Kitajima , Shinobu Takahashi , Kyosuke Ito
发明人： Shigemasa Kitajima , Shinobu Takahashi , Kyosuke Ito
IPC分类号： F21S8/00
CPC分类号： G02B6/0055 , E04F2290/026 , F21S8/032 , F21S10/02 , F21V2200/20 , F21Y2105/00 , F21Y2113/13 , F21Y2115/10 , G02B6/0036 , G02B6/0051 , G02B6/0068 , G02B6/0078 , G02B6/0083 , G02B6/0086 , Y10S362/80
摘要： A surface light-emitting unit installed on a floor or wall of a structure is able to emit light from its surface for unique illumination effects. A surface light-emitting unit includes a transparent glass plate that can transmit light; a light-conducting plate installed below the glass plate; a light-emitting means having multiple light-emitting diodes of different colors and installed on the side face of the light-conducting plate; a light-diffusing/reflecting member installed below the light-conducting plate that diffuses and reflects the light; an emission-color selection means for selecting the light-emitting diode to be illuminated or blinked; a casing for providing the transparent glass plate at the top opening; a casing for installing above components; and a connection part that can be connected to other surface light-emitting unit installed adjacently.
摘要翻译：安装在结构的地板或墙壁上的表面发光单元能够从其表面发光以获得独特的照明效果。表面发光单元包括可透射光的透明玻璃板; 安装在玻璃板下方的导光板; 具有多个不同颜色的发光二极管并且安装在导光板的侧面上的发光装置; 设置在所述导光板的下方扩散并反射光的光扩散/反射部件; 发光颜色选择装置，用于选择要被点亮或闪烁的发光二极管; 用于在顶部开口处提供透明玻璃板的壳体; 用于安装上述部件的外壳; 以及可以与其他表面发光单元相邻连接的连接部。

6. 发明授权

US08795544B2 Power storage device, lithium-ion secondary battery, electric double layer capacitor and lithium-ion capacitor 有权
标题翻译：蓄电装置，锂离子二次电池，双电层电容器和锂离子电容器
公开(公告)号：US08795544B2
公开(公告)日：2014-08-05
申请号：US13167030
申请日：2011-06-23
申请人： Kyosuke Ito , Toru Itakura
发明人： Kyosuke Ito , Toru Itakura
IPC分类号： H01M10/0561 , H01M10/0563
CPC分类号： H01M10/0569 , H01G11/22 , H01G11/58 , H01G11/62 , H01M10/0525 , H01M10/0561 , H01M10/0563 , H01M10/0566 , H01M2300/0034 , Y02E60/122 , Y02E60/13 , Y02T10/7011 , Y02T10/7022
摘要： One object is to provide a power storage device including an electrolyte using a room-temperature ionic liquid which includes a univalent anion and a cyclic quaternary ammonium cation having excellent reduction resistance. Another object is to provide a high-performance power storage device. A room-temperature ionic liquid which includes a cyclic quaternary ammonium cation represented by a general formula (G1) below is used for an electrolyte of a power storage device. In the general formula (G1), one or two of R1 to R5 are any of an alkyl group having 1 to 20 carbon atoms, a methoxy group, a methoxymethyl group, and a methoxyethyl group. The other three or four of R1 to R5 are hydrogen atoms. A− is a univalent imide anion, a univalent methide anion, a perfluoroalkyl sulfonic acid anion, tetrafluoroborate (BF4−), or hexafluorophosphate (PF6−).
摘要翻译：一个目的是提供一种蓄电装置，其包括使用室温离子液体的电解质，其包含一价阴离子和具有优异的抗还原性的环状季铵阳离子。另一个目的是提供一种高性能蓄电装置。包含由下述通式（G1）表示的环状季铵阳离子的室温离子液体用于蓄电装置的电解质。在通式（G1）中，R 1至R 5中的一个或两个为具有1至20个碳原子的烷基，甲氧基，甲氧基甲基和甲氧基乙基中的任一个。 R1至R5中的另外三个或四个是氢原子。 A-是一价酰亚胺阴离子，一价甲基阴离子，全氟烷基磺酸阴离子，四氟硼酸盐（BF4-）或六氟磷酸盐（PF6-）。

7. 发明申请

US20090321902A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090321902A1
公开(公告)日：2009-12-31
申请号：US12555832
申请日：2009-09-09
申请人： Hidekazu Takahashi , Daiki Yamada , Kyosuke Ito , Eiji Sugiyama , Yoshitaka Dozen
发明人： Hidekazu Takahashi , Daiki Yamada , Kyosuke Ito , Eiji Sugiyama , Yoshitaka Dozen
IPC分类号： H01L23/552
CPC分类号： H01L23/66 , H01L23/49855 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.
摘要翻译：本发明的半导体器件包括晶体管，设置在晶体管上的绝缘层，通过开口部分电连接到晶体管的源极区域或漏极区域的第一导电层（对应于源极线或漏极线）设置在所述绝缘层中的第一树脂层，设置在所述绝缘层和所述第一导电层上的第一树脂层，包含通过设置在所述第一树脂层中的开口部与所述第一导电层电连接的导电粒子的层和设置在所述第一树脂层上的基板具有第二树脂层和用作天线的第二导电层。在具有上述结构的半导体器件中，第二导电层与第一导电层电连接，其间含有导电粒子的层。此外，第二树脂层设置在第一树脂层上。

8. 发明授权

US07605056B2 Method of manufacturing a semiconductor device including separation by physical force 有权
标题翻译：制造半导体器件的方法，包括通过物理力分离
公开(公告)号：US07605056B2
公开(公告)日：2009-10-20
申请号：US11436090
申请日：2006-05-18
申请人： Hidekazu Takahashi , Daiki Yamada , Kyosuke Ito , Eiji Sugiyama , Yoshitaka Dozen
发明人： Hidekazu Takahashi , Daiki Yamada , Kyosuke Ito , Eiji Sugiyama , Yoshitaka Dozen
IPC分类号： H01L23/48
CPC分类号： H01L23/66 , H01L23/49855 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.
摘要翻译：本发明的半导体器件包括晶体管，设置在晶体管上的绝缘层，通过开口部分电连接到晶体管的源极区域或漏极区域的第一导电层（对应于源极线或漏极线）设置在所述绝缘层中的第一树脂层，设置在所述绝缘层和所述第一导电层上的第一树脂层，包含通过设置在所述第一树脂层中的开口部与所述第一导电层电连接的导电粒子的层和设置在所述第一树脂层上的基板具有第二树脂层和用作天线的第二导电层。在具有上述结构的半导体器件中，第二导电层与第一导电层电连接，其间含有导电粒子的层。此外，第二树脂层设置在第一树脂层上。

9. 发明授权

US07354801B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07354801B2
公开(公告)日：2008-04-08
申请号：US11229497
申请日：2005-09-20
申请人： Eiji Sugiyama , Kyosuke Ito
发明人： Eiji Sugiyama , Kyosuke Ito
IPC分类号： H01L21/44
CPC分类号： H01L27/1266 , H01L21/7806 , H01L27/1214
摘要： In the case where an integrated circuit formed of a thin film is formed over a substrate and peeled from the substrate, a fissure (also referred to as crack) is generated in the integrated circuit in some cases. The present invention is to restrain the generation of a fissure by fixing the proceeding direction of etching in one direction to make a peeled layer warp in one direction in accordance with the proceeding of etching. For example, the proceeding of etching can be controlled by utilizing the fact that a portion where a substrate is in contact with a base insulating layer is not etched in the case of patterning a peeling layer provided over the substrate, then forming the base insulating layer, and then fixing a peeled layer by the portion where the substrate is in contact with the base insulating layer.
摘要翻译：在由薄膜形成的集成电路形成在基板上并从基板剥离的情况下，在某些情况下，在集成电路中产生裂缝（也称为裂纹）。本发明是通过在一个方向上固定前进方向的蚀刻来抑制裂缝的产生，以便根据蚀刻的进行使剥离层在一个方向上翘曲。例如，可以通过利用以下事实来控制蚀刻的进行：在图案化设置在基板上的剥离层的情况下，基板与基底绝缘层接触的部分不被蚀刻，然后形成基底绝缘层，然后通过基板与基底绝缘层接触的部分固定剥离层。

10. 发明申请

US20080036680A1 Semiconductor Device Having Antenna and Method for Manufacturing Thereof 有权
标题翻译：具有天线的半导体器件及其制造方法
公开(公告)号：US20080036680A1
公开(公告)日：2008-02-14
申请号：US11665548
申请日：2005-10-18
申请人： Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
发明人： Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
IPC分类号： H01Q1/40 , H01Q17/00
CPC分类号： H01L27/1266 , G06K19/07749 , H01L27/1214 , H01L27/13 , H01L2224/95001 , H01Q1/2225 , H01Q7/00 , Y10T29/49018
摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
摘要翻译：本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。元件形成层和天线电连接。天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

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