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1. 发明授权

US07727809B2 Attachment method, attachment apparatus, manufacturing method of semiconductor device, and manufacturing apparatus of semiconductor device 失效
标题翻译：附件方法，附件装置，半导体装置的制造方法以及半导体装置的制造装置
公开(公告)号：US07727809B2
公开(公告)日：2010-06-01
申请号：US11798979
申请日：2007-05-18
申请人： Kyosuke Ito , Osamu Nakamura , Yukie Suzuki
发明人： Kyosuke Ito , Osamu Nakamura , Yukie Suzuki
IPC分类号： H01L21/00
CPC分类号： H01L23/4985 , G06K19/07718 , H01L21/6835 , H01L23/49855 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01046 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12044 , H01L2924/13091 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The invention proposes a method and an apparatus for attaching a plurality of components having different arrangement densities or arrangement intervals, which can achieve shorter takt time. An object is to provide a low-cost manufacturing method of a semiconductor device and a manufacturing apparatus capable of manufacturing a semiconductor device at low cost. Plural pairs of components having different arrangement densities are simultaneously attached to each other by temporarily attaching first components to a first flexible substrate while changing an arrangement interval in an X direction, and then connecting the first components to second components over a second flexible substrate while changing an arrangement interval of the first components in a Y direction.
摘要翻译：本发明提出了一种用于安装具有不同布置密度或排列间隔的多个部件的方法和装置，其可以实现更短的打印时间。本发明的目的是提供一种能够以低成本制造半导体器件的半导体器件和制造装置的低成本制造方法。具有不同排列密度的多组成分通过将第一组分暂时地附着到第一柔性衬底上同时附着，同时改变X方向上的排列间隔，然后在第二柔性衬底上将第一组分连接到第二组分上，同时改变 Y方向上的第一分量的排列间隔。

2. 发明申请

US20070281391A1 Attachment method, attachment apparatus, manufacturing method of semiconductor device, and manufacturing apparatus of semiconductor device 失效
标题翻译：附件方法，附件装置，半导体装置的制造方法以及半导体装置的制造装置
公开(公告)号：US20070281391A1
公开(公告)日：2007-12-06
申请号：US11798979
申请日：2007-05-18
申请人： Kyosuke Ito , Osamu Nakamura , Yukie Suzuki
发明人： Kyosuke Ito , Osamu Nakamura , Yukie Suzuki
IPC分类号： H01L21/00
CPC分类号： H01L23/4985 , G06K19/07718 , H01L21/6835 , H01L23/49855 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01046 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12044 , H01L2924/13091 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The invention proposes a method and an apparatus for attaching a plurality of components having different arrangement densities or arrangement intervals, which can achieve shorter takt time. An object is to provide a low-cost manufacturing method of a semiconductor device and a manufacturing apparatus capable of manufacturing a semiconductor device at low cost. Plural pairs of components having different arrangement densities are simultaneously attached to each other by temporarily attaching first components to a first flexible substrate while changing an arrangement interval in an X direction, and then connecting the first components to second components over a second flexible substrate while changing an arrangement interval of the first components in a Y direction.
摘要翻译：本发明提出了一种用于安装具有不同布置密度或排列间隔的多个部件的方法和装置，其可以实现更短的打印时间。本发明的目的是提供一种能够以低成本制造半导体器件的半导体器件和制造装置的低成本制造方法。具有不同排列密度的多组成分通过将第一组分暂时地附着到第一柔性衬底上同时附着，同时改变X方向上的排列间隔，然后在第二柔性衬底上将第一组分连接到第二组分上，同时改变 Y方向上的第一分量的排列间隔。

3. 发明授权

US08201329B2 Apparatus and method for manufacturing semiconductor device 有权
标题翻译：半导体器件制造装置及方法
公开(公告)号：US08201329B2
公开(公告)日：2012-06-19
申请号：US12792812
申请日：2010-06-03
申请人： Osamu Nakamura , Kyosuke Ito
发明人： Osamu Nakamura , Kyosuke Ito
IPC分类号： H01R43/00 , H05K13/00 , H01L21/00 , H01L21/64
CPC分类号： H05K13/0478 , H01L24/75 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05572 , H01L2224/16225 , H01L2224/81192 , H01L2224/81815 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/07811 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , Y10T29/41 , Y10T29/49018 , Y10T29/4913 , Y10T29/49169 , H01L2924/00 , H01L2224/81 , H01L2224/05599
摘要： The manufacturing apparatus of a semiconductor device includes a jig having a plurality of holders arranged in a row, a controller for controlling the pitch of the plurality of holders arranged in a row, a support means provided with a plurality of semiconductor integrated circuits, and a support means provided with a substrate having a plurality of elements. By mounting the semiconductor integrated circuits on the respective elements by using the jig having the plurality of holders arranged in a row, semiconductor devices are manufactured.
摘要翻译：半导体器件的制造装置包括：具有排列成一列的多个保持器的夹具，用于控制排列成一列的多个保持器的间距的控制器，设置有多个半导体集成电路的支撑装置，以及支撑装置设置有具有多个元件的基板。通过使用具有排成行的多个保持器的夹具将半导体集成电路安装在各个元件上，制造半导体器件。

4. 发明申请

US20070183184A1 Apparatus and method for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件制造装置及方法
公开(公告)号：US20070183184A1
公开(公告)日：2007-08-09
申请号：US11655173
申请日：2007-01-19
申请人： Osamu Nakamura , Kyosuke Ito
发明人： Osamu Nakamura , Kyosuke Ito
IPC分类号： G11C11/24
CPC分类号： H05K13/0478 , H01L24/75 , H01L24/81 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05572 , H01L2224/16225 , H01L2224/81192 , H01L2224/81815 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/07811 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , Y10T29/49018 , Y10T29/4913 , Y10T29/49169 , H01L2924/00 , H01L2224/81 , H01L2224/05599
摘要： The manufacturing apparatus of a semiconductor device includes a jig having a plurality of holders arranged in a row, a controller for controlling the pitch of the plurality of holders arranged in a row, a support means provided with a plurality of semiconductor integrated circuits, and a support means provided with a substrate having a plurality of elements. By mounting the semiconductor integrated circuits on the respective elements by using the jig having the plurality of holders arranged in a row, semiconductor devices are manufactured.
摘要翻译：半导体器件的制造装置包括：具有排列成一列的多个保持器的夹具，用于控制排列成一列的多个保持器的间距的控制器，设置有多个半导体集成电路的支撑装置，以及支撑装置设置有具有多个元件的基板。通过使用具有排成行的多个保持器的夹具将半导体集成电路安装在各个元件上，制造半导体器件。

5. 发明申请

US20060189047A1 Television, electronic apparatus, and method of fabricating semiconductor device 有权
标题翻译：电视机，电子设备以及制造半导体器件的方法
公开(公告)号：US20060189047A1
公开(公告)日：2006-08-24
申请号：US11193513
申请日：2005-08-01
申请人： Shunpei Yamazaki , Shinji Maekawa , Tatsuya Honda , Hironobu Shoji , Osamu Nakamura , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Shinji Maekawa , Tatsuya Honda , Hironobu Shoji , Osamu Nakamura , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L21/84
CPC分类号： H01L27/1277 , H01L27/1214 , H01L27/124 , H01L27/1251 , H01L27/1288
摘要： [Object] The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials. [Means for Solving the Problem] According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.
摘要翻译：本发明提供了一种制造具有能够高速操作的反交错TFT的半导体器件的方法，其具有极小的阈值变化。此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。解决问题的手段根据本发明，通过形成逆交错TFT来制造半导体器件，该TFT是使用高耐热材料形成栅电极，沉积非晶半导体膜，将催化元素添加到非晶半导体膜并加热非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，形成通过利用晶体半导体膜的一部分形成半导体区域，形成与半导体区域电连接的源电极和漏电极，以及形成与栅电极连接的栅极布线。

6. 发明授权

US07564058B2 Display device, manufacturing method thereof, and television set 有权
标题翻译：显示装置及其制造方法以及电视机
公开(公告)号：US07564058B2
公开(公告)日：2009-07-21
申请号：US11187988
申请日：2005-07-25
申请人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L27/14
CPC分类号： H01L21/02667 , G02F1/1368 , G02F2202/104 , H01L21/2022 , H01L21/2026 , H01L27/124 , H01L27/1277 , H01L27/1292 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L51/56
摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.
摘要翻译：提供了具有能够以极小的阈值电压变化进行高速运行的TFT的显示装置的制造方法，其中以高效率使用材料并且需要少量的光掩模。本发明的显示装置包括形成在绝缘表面上的栅极电极层和像素电极层，形成在栅极电极层上的栅极绝缘层，形成在栅极绝缘层上的结晶半导体层，具有一个导电性的半导体层形成为与结晶半导体层接触的类型，源电极层和漏极电极层，形成为与具有一种导电类型的半导体层接触，在源极电极层，漏极电极层和像素电极之后形成绝缘体在所述绝缘层中形成的第一开口到达所述源极电极层或所述漏极电极层，形成在所述栅极绝缘层和所述绝缘层中的第二开口到达所述像素电极层;以及布线层，开口和第二开口以电连接源极电极层或漏极电极呃到像素电极层。

7. 发明授权

US07648861B2 Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region 有权
标题翻译：制造半导体器件的方法包括在第一半导体区域上分别形成含有杂质元素的第二半导体膜
公开(公告)号：US07648861B2
公开(公告)日：2010-01-19
申请号：US11193513
申请日：2005-08-01
申请人： Shunpei Yamazaki , Shinji Maekawa , Tatsuya Honda , Hironobu Shoji , Osamu Nakamura , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Shinji Maekawa , Tatsuya Honda , Hironobu Shoji , Osamu Nakamura , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L21/00
CPC分类号： H01L27/1277 , H01L27/1214 , H01L27/124 , H01L27/1251 , H01L27/1288
摘要： The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials.According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.
摘要翻译：本发明提供一种制造半导体器件的方法，该半导体器件具有能够高速操作的反交错TFT，其阈值变化很小。此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。根据本发明，通过形成反交错的TFT来制造半导体器件，该TFT通过使用高耐热材料形成栅电极，沉积非晶半导体膜，向非晶半导体膜中加入催化元素并加热非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，通过利用部分形成半导体区域形成与半导体区域电连接的源电极和漏电极，形成与栅电极连接的栅极布线。

8. 发明申请

US20060027804A1 Display device, manufacturing method thereof, and television set 有权
公开(公告)号：US20060027804A1
公开(公告)日：2006-02-09
申请号：US11187988
申请日：2005-07-25
申请人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
发明人： Shunpei Yamazaki , Hironobu Shoji , Shinji Maekawa , Osamu Nakamura , Tatsuya Honda , Gen Fujii , Yukie Suzuki , Ikuko Kawamata
IPC分类号： H01L29/04
CPC分类号： H01L21/02667 , G02F1/1368 , G02F2202/104 , H01L21/2022 , H01L21/2026 , H01L27/124 , H01L27/1277 , H01L27/1292 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L51/56
摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.

9. 发明授权

US09301260B2 Wireless communication system, communication control apparatus, communication terminal apparatus, and control program of communication control apparatus 有权
标题翻译：无线通信系统，通信控制装置，通信终端装置以及通信控制装置的控制程序
公开(公告)号：US09301260B2
公开(公告)日：2016-03-29
申请号：US13496809
申请日：2010-08-20
申请人： Jungo Goto , Yasuhiro Hamaguchi , Kazunari Yokomakura , Osamu Nakamura , Hiroki Takahashi
发明人： Jungo Goto , Yasuhiro Hamaguchi , Kazunari Yokomakura , Osamu Nakamura , Hiroki Takahashi
IPC分类号： G08C17/00 , H04W52/14 , H04W52/24 , H04W52/26 , H04W72/04 , H04B17/382
CPC分类号： H04W52/146 , H04B17/382 , H04W52/247 , H04W52/26 , H04W72/0453
摘要： To perform control so as to achieve a transmission power that satisfies a desired communication quality by an access method which a mobile station apparatus uses, in consideration of the frequency-selective diversity effect, when switching an access method to the one having a different frequency-selective diversity effect. In a wireless communication system in which a communication control apparatus and a communication terminal apparatus that are able to use a plurality of types of access methods perform wireless communication using any of the access methods, the communication control apparatus, when the necessity of changing the access method arises, determines the access method after change and notifies the communication terminal apparatus of switching the access method before change to the determined access method, and performs the transmission power control in accordance with communication characteristics of the determined access method.
摘要翻译：为了进行控制，以便考虑到频率选择分集效应，通过移动站装置使用的访问方法来实现满足期望的通信质量的发送功率，当将访问方法切换到具有不同频率 - 选择性多样性效应。在能够使用多种类型的访问方式的通信控制装置和通信终端装置使用任何访问方法进行无线通信的无线通信系统中，通信控制装置当需要改变访问时方法出现，确定更改后的访问方法，并通知通信终端设备将切换之前的访问方法切换为确定的访问方法，并根据所确定的访问方法的通信特性执行传输功率控制。

10. 发明授权

US09119187B2 Communication system, transmitting device, receiving device, and processor 有权
标题翻译：通信系统，发送设备，接收设备和处理器
公开(公告)号：US09119187B2
公开(公告)日：2015-08-25
申请号：US13993264
申请日：2011-12-12
申请人： Osamu Nakamura , Hiroki Takahashi , Jungo Goto , Kazunari Yokomakura , Yasuhiro Hamaguchi
发明人： Osamu Nakamura , Hiroki Takahashi , Jungo Goto , Kazunari Yokomakura , Yasuhiro Hamaguchi
IPC分类号： H04Q7/00 , H04W72/04 , H04J11/00 , H04L1/18 , H04L25/03 , H04L27/26 , H04L25/06 , H04W28/04
CPC分类号： H04W72/04 , H04J11/0023 , H04L1/1819 , H04L1/1867 , H04L25/03146 , H04L25/03828 , H04L25/067 , H04L27/2602 , H04L27/2623 , H04L27/2634 , H04W28/04
摘要： An encoding unit encodes an information bit sequence. An IDFT unit generates a spectrum from the signals of the information bit sequence. A clipping unit generates, when re-transmitting the information bit sequence, a transmission spectrum that differs from that of the previous transmission. An OFDM signal generation unit transmits the transmission spectrum.
摘要翻译：编码单元对信息比特序列进行编码。 IDFT单元根据信息比特序列的信号产生频谱。当重新发送信息比特序列时，剪切单元产生与先前发送不同的发送频谱。 OFDM信号生成单元发送发送频谱。

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