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1. 发明申请

US20080036680A1 Semiconductor Device Having Antenna and Method for Manufacturing Thereof 有权
标题翻译：具有天线的半导体器件及其制造方法
公开(公告)号：US20080036680A1
公开(公告)日：2008-02-14
申请号：US11665548
申请日：2005-10-18
申请人： Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
发明人： Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
IPC分类号： H01Q1/40 , H01Q17/00
CPC分类号： H01L27/1266 , G06K19/07749 , H01L27/1214 , H01L27/13 , H01L2224/95001 , H01Q1/2225 , H01Q7/00 , Y10T29/49018
摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
摘要翻译：本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。元件形成层和天线电连接。天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

2. 发明授权

US08178958B2 Semiconductor device having antenna and method for manufacturing thereof 有权
标题翻译：具有天线的半导体器件及其制造方法
公开(公告)号：US08178958B2
公开(公告)日：2012-05-15
申请号：US11665548
申请日：2005-10-18
申请人： Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
发明人： Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
IPC分类号： H01L23/02
CPC分类号： H01L27/1266 , G06K19/07749 , H01L27/1214 , H01L27/13 , H01L2224/95001 , H01Q1/2225 , H01Q7/00 , Y10T29/49018
摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
摘要翻译：本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。元件形成层和天线电连接。天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

3. 发明授权

US09559129B2 Semiconductor device having antenna and method for manufacturing thereof 有权
标题翻译：具有天线的半导体器件及其制造方法
公开(公告)号：US09559129B2
公开(公告)日：2017-01-31
申请号：US13468354
申请日：2012-05-10
申请人： Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
发明人： Kyosuke Ito , Junya Maruyama , Takuya Tsurume , Shunpei Yamazaki
IPC分类号： H01L27/13 , G06K19/077 , H01Q1/22 , H01Q7/00 , H01L27/12
CPC分类号： H01L27/1266 , G06K19/07749 , H01L27/1214 , H01L27/13 , H01L2224/95001 , H01Q1/2225 , H01Q7/00 , Y10T29/49018
摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
摘要翻译：本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。元件形成层和天线电连接。天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

4. 发明授权

US08673739B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08673739B2
公开(公告)日：2014-03-18
申请号：US13303519
申请日：2011-11-23
申请人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
发明人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
摘要翻译：本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成。保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

5. 发明授权

US07622361B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07622361B2
公开(公告)日：2009-11-24
申请号：US11822609
申请日：2007-07-09
申请人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
发明人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/46 , H01L21/30 , H01L21/78 , H01L21/301
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

6. 发明授权

US07375006B2 Peeling method 有权
标题翻译：剥皮方法
公开(公告)号：US07375006B2
公开(公告)日：2008-05-20
申请号：US11542216
申请日：2006-10-04
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.
摘要翻译：提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层高产。此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。在410℃以上进行用于扩散氢的热处理。结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

7. 发明申请

US20050112805A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050112805A1
公开(公告)日：2005-05-26
申请号：US10967279
申请日：2004-10-19
申请人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
发明人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L29/786 , H01L21/762 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L51/52 , H01L51/56 , H01L21/00
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

8. 发明授权

US07883989B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07883989B2
公开(公告)日：2011-02-08
申请号：US12578722
申请日：2009-10-14
申请人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
发明人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/46 , H01L21/30 , H01L21/78 , H01L21/301
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

9. 发明授权

US07820529B2 Method for manufacturing integrated circuit 有权
标题翻译：集成电路制造方法
公开(公告)号：US07820529B2
公开(公告)日：2010-10-26
申请号：US10591700
申请日：2005-03-15
申请人： Takuya Tsurume , Junya Maruyama , Yoshitaka Dozen
发明人： Takuya Tsurume , Junya Maruyama , Yoshitaka Dozen
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214 , H05K3/20
摘要： A method for separating an integrated circuit formed by a thin film having a novel structure or a method for transferring the integrated circuit to another substrate, that is, so-called transposing method, has not been proposed. According to the present invention, in the case that an integrated circuit having a thin film having a novel structure formed over a substrate via a release layer is separated, the release layer is removed in the state that the thin film integrated circuit is fixated, the thin film integrated circuit is transposed to a supporting substrate having an adhesion surface, and the thin film integrated circuit is transposed to another substrate having an adhesion surface with higher strength of adhesion than that of the supporting substrate.
摘要翻译：用于将由具有新颖结构的薄膜形成的集成电路分离的方法或将集成电路转移到另一基板的方法，即所谓的转置方法尚未提出。根据本发明，在通过剥离层在基板上形成具有新颖结构的薄膜的集成电路被分离的情况下，在薄膜集成电路固定的状态下去除剥离层，薄膜集成电路被转置到具有粘合表面的支撑基板上，并且薄膜集成电路被转置到具有比支撑基板的粘合强度更高的粘附表面的另一基板。

10. 发明授权

US07595256B2 Semiconductor device, method of manufacturing thereof, and method of manufacturing base material 有权
标题翻译：半导体装置及其制造方法以及基材的制造方法
公开(公告)号：US07595256B2
公开(公告)日：2009-09-29
申请号：US11798094
申请日：2007-05-10
申请人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
发明人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
摘要翻译：本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成。保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

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