会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of forming a gate in a stack gate flash EEPROM cell
    • 在堆叠栅极快速EEPROM单元中形成栅极的方法
    • US06204125B1
    • 2001-03-20
    • US09605632
    • 2000-06-28
    • Keun Woo LeeKi Seog KimJin ShinSung Kee Park
    • Keun Woo LeeKi Seog KimJin ShinSung Kee Park
    • H01L218247
    • H01L27/11521H01L21/28273
    • The present invention relates to a method of forming a gate in a stack gate flash EEPROM cell. In order to preventing a lateral bird's beak from occurring in an ONO dielectric layer during a reoxidation process to be performed after a formation of a cell gate having a stack structure formed by stacking a floating gate, an ONO dielectric layer and a control gate, an oxide layer and a nitride layer are sequentially formed on an entire structure before the reoxidation and after a formation of the cell gate. The oxide layer serves to reduce a stress in depositing the nitride layer, and the nitride layer serves to prevent an occurrence of the lateral bird's beak of the ONO dielectric layer during the reoxidation process. Accordingly, the present invention prevents the lateral bird's beak of the ONO dielectric layer, thereby improving a speed of cell erase operation.
    • 本发明涉及一种在堆叠栅极快闪EEPROM单元中形成栅极的方法。 为了防止在形成具有通过堆叠浮栅,ONO电介质层和控制栅形成的堆叠结构的电池栅极的再氧化工艺期间在ONO电介质层中发生侧面鸟嘴, 氧化层和氮化物层在再氧化之前和电池栅极形成之后的整个结构上依次形成。 氧化物层用于减少沉积氮化物层的应力,并且氮化物层用于在再氧化过程期间防止ONO电介质层的侧面鸟喙的发生。 因此,本发明能够防止ONO电介质层的横向鸟嘴,从而提高电池擦除操作的速度。
    • 2. 发明授权
    • Method of monitoring a source contact in a flash memory
    • 监视闪存中的源触点的方法
    • US06391665B1
    • 2002-05-21
    • US09722112
    • 2000-11-27
    • Sang Hoan ChangKi Seog KimJin ShinKeun Woo Lee
    • Sang Hoan ChangKi Seog KimJin ShinKeun Woo Lee
    • H01L21336
    • H01L27/11521G11C16/04G11C29/50G11C29/50008G11C2029/5006H01L21/76895H01L27/115
    • There is disclosed a method of monitoring a source contact in a flash memory by which whether a source contact having a narrow contact area contacts or not can be easily monitored using over-erase cell characteristic in a flash cell, in a flash memory device in which a source line is formed by a local interconnection method. In the present invention, in order to monitor a contact state at source contacts, the same voltage to the erase condition of a cell is applied to respective terminals (VG terminal, VD terminal, VS terminal and VSS terminal) wherein all the electrons existing at a floating gate in all the cells connected to the VS terminal and VSS terminal become turned on so that they can be over-erased. On the other hands, as electrons existing at the floating gate in two cells shared by any source contacts having a defect contact are not erased, the cells remain turn-off. In this state, if test voltages (VG=0V, VD
    • 公开了一种监视闪速存储器中的源极触点的方法,通过该闪光存储器中的源极触点可以容易地利用闪存单元中的过擦除单元特性来容易地监视具有窄接触区域的源极触点的触点, 源线由本地互连方式形成。 在本发明中,为了监测源极触点的接触状态,将与电池的擦除状态相同的电压施加到各个端子(VG端子,VD端子,VS端子和VSS端子),其中所有电子存在于 连接到VS端子和VSS端子的所有单元中的浮动栅极变为导通,使得它们可能被过擦除。 另一方面,由于存在于由具有缺陷接触的任何源极触点共享的两个电池中的浮动栅极处的电子不被擦除,所以电池保持关断。 在这种状态下,如果施加了测试电压(VG = 0V,VD <5V,VS =浮动,VSS =接地),则在具有接触缺陷的部分中,从VD端子到VSS端子的电流断开,从而允许 要监控的源触点的接触状态。
    • 3. 发明申请
    • Autonomous control system apparatus and program for a small, unmanned helicopter
    • 一种小型无人直升机的自动控制系统装置和程序
    • US20050027406A1
    • 2005-02-03
    • US10786049
    • 2004-02-26
    • Kenzo NonamiJin ShinDaigo FujiwaraKensaku HazawaKeitaro Matsusaka
    • Kenzo NonamiJin ShinDaigo FujiwaraKensaku HazawaKeitaro Matsusaka
    • B64C13/20B64C39/02G05D1/00G06F17/00
    • G05D1/0033
    • An objective of the invention, focusing on these issues involved in the use of a small, hobby-type, unmanned helicopter, is to develop an autonomous control system comprising autonomous control systems for a small unmanned helicopter, to be mounted on said small unmanned helicopter; a servo pulse mixing/switching unit; a radio-controlled pulse generator; and autonomous control algorithms that are appropriate for the autonomous control of the aforementioned small unmanned helicopter, thereby providing an autonomous control system that provides autonomous control on the helicopter toward target values. The autonomous control system for a small unmanned helicopter of the present invention comprises: Sensors that detect the current position, the attitude angle, the altitude relative to the ground, and the absolute azimuth of the nose of the aforementioned small unmanned helicopter; A primary computational unit that calculates optimal control reference values for driving the servo motors that move five rudders on the helicopter from the target position or velocity values that are set by the ground station and the aforementioned current position and attitude angle of the small unmanned helicopter that are detected by the aforementioned sensors; An autonomous control system equipped with a secondary computational unit that converts the data collected by said sensors and the computational results as numeric values that are output by said primary computational unit into pulse signals that can be accepted by the servo motors, Such that these components are assembled into a small frame box, thereby achieving both size and weight reductions.
    • 本发明的目标是关注使用小型爱好型无人直升机所涉及的这些问题,是开发一种自主控制系统,包括用于小型无人直升机的自主控制系统,安装在所述小型无人直升机上 ; 伺服脉冲混合/切换装置; 无线电脉冲发生器; 以及适用于上述小型无人直升机的自主控制的自主控制算法,从而提供了一种自主控制系统,其向直升机提供朝向目标值的自主控制。 本发明的小型无人直升机的自主控制系统包括:检测当前位置,姿态角度,相对于地面的高度的传感器和上述小型无人直升机的鼻子的绝对方位角; 计算最佳控制参考值的主要计算单元,用于驱动从目标位置移动直升机上的五个方向舵的伺服电机或由地面站设定的速度值以及上述当前的小型无人直升机的位置和姿态角度的伺服电机, 由上述传感器检测; 一种配备有二次计算单元的自主控制系统,其将由所述传感器收集的数据和计算结果转换为由所述主要计算单元输出的数字值作为可由伺服电动机接受的脉冲信号。这些组件是 组装成小框架盒,从而实现尺寸和重量的减轻。
    • 4. 发明授权
    • Method of manufacturing a flash memory device
    • 制造闪存装置的方法
    • US06221716B1
    • 2001-04-24
    • US09428424
    • 1999-10-27
    • Young Chun LeeJin ShinSang Soo Kim
    • Young Chun LeeJin ShinSang Soo Kim
    • H01L21336
    • H01L27/11521H01L29/42324
    • There is disclosed a method of manufacturing a flash memory cell comprising the steps of forming a first ploysilicon layer pattern then forms a cell source; patterning a second polysilicon layer so that a gate electrode can be formed while the portion of the first polysilicon pattern where the cell drain will be formed is opened; forming a transistor at peripheral circuit area by performing ion injection process and a thermal process; forming a floating gate and a control gate by performing a self aligned etching process; and forming a cell source line and a cell drain by injecting cell source/drain ions. The flash memory cell formed thus has an increased coupling ratio since the control gate is formed to surround the floating gate, and also has an improved hot carrier reliability characteristic both at the peripheral circuit and the cell area upon operation of the device since the cell drain is formed after the thermal process for forming the peripheral circuit source and drain.
    • 公开了一种制造闪存单元的方法,包括以下步骤:形成第一多晶硅层图案然后形成单元源; 图案化第二多晶硅层,使得可以形成栅电极,同时打开将形成电池漏极的第一多晶硅图案的部分; 通过进行离子注入处理和热处理在外围电路区域形成晶体管; 通过进行自对准蚀刻工艺形成浮栅和控制栅; 并通过注入电池源极/漏极离子形成电池源极线和电池漏极。 由于控制栅极形成为围绕浮置栅极,所以形成的闪存单元具有增加的耦合比,并且在器件工作时在外围电路和单元区域中也具有改进的热载流子可靠性特性,因为电池漏极 在形成外围电路源极和漏极的热处理之后形成。
    • 6. 发明申请
    • Flat fluorescent lamp and backlight unit having the same
    • 平面荧光灯和具有相同的背光单元
    • US20060268577A1
    • 2006-11-30
    • US11437114
    • 2006-05-18
    • Woo KangJin ShinKyoung Park
    • Woo KangJin ShinKyoung Park
    • F21V7/04
    • H01J61/305G02F1/133602H01J61/526
    • Provided is a flat fluorescent lamp comprising a main body with a plurality of discharge spaces therein, an electrode unit for applying voltage to the discharge spaces, said electrode unit formed on the surface of the main body, and at least one cooling pad adhered onto the electrode unit. The cooling pad may include at least two materials, which have different thermal conductivity with each other. Heat dissipation through the cooling pad minimizes the heat accumulation in the electrode unit, and resultantly prevents a pinhole in a glass plate at the electrode unit. Furthermore, driving voltage to be applied to the lamp can be increased beyond its limitation, thereby realizing a high brightness flat fluorescent lamp.
    • 本发明提供一种扁平荧光灯,其特征在于,具备:多个放电空间的主体,向所述放电空间施加电压的电极单元,形成在所述主体的表面上的所述电极单元,以及粘附在所述主体上的至少一个冷却垫 电极单元。 冷却垫可以包括彼此具有不同导热性的至少两种材料。 通过冷却垫片的散热使得电极单元中的热积聚最小化,从而防止电极单元中的玻璃板中的针孔。 此外,施加到灯的驱动电压可以超出其限制,从而实现高亮度平面荧光灯。
    • 7. 发明申请
    • 12th active filter capable of concurrently removing 11th and 13th harmonics
    • 第12个有源滤波器,能够同时去除第11和第13个谐波
    • US20050057949A1
    • 2005-03-17
    • US10735537
    • 2003-12-12
    • Chan KimJeong AhnGil JungSeok LeeJin Shin
    • Chan KimJeong AhnGil JungSeok LeeJin Shin
    • H02J3/01H02M1/12H02M5/45
    • H02M1/12H02J3/01Y02E40/40
    • The present invention relates to a 12th active filter capable of concurrently removing 11th and 13th harmonics in order to obtain a filter performance capable of removing 11th and 13 harmonics even when a filter capable of removing 11th and 13th harmonics is constituted using a compensation function. The 12th active filter capable of concurrently removing 11th and 13th harmonics is characterized in that a passive filter 7-1 formed of a condenser 7-1-1, an inductance 7-1-2 and a resistor 7-1-3 is formed of the phases A, B and C, and the passive filter 7-1 of each phase is formed in a three-phase structure in which a switch 7-3 and a voltage source converter 7-4 are connected through a transformer 7-2, and in the voltage source converter 7-4, V1˜V6 of a firing unit 7-7 are connected with the bases of the transistors of semiconductor devices V1˜V6, respectively, and a control unit 7-6 connected with a signal detection unit 7-5 is connected with the firing unit 7-7 for thereby removing 11th and 13th harmonics.
    • 本发明涉及能够同时去除11次和13次谐波的12Ω有源滤波器,以获得能够去除11次和13次谐波的滤波器性能,即使当能够去除 使用补偿函数构成11&lt; 13&gt;次谐波。 能够同时去除11次和13次谐波的12个有源滤波器的特征在于,由电容器7-1-1,电感器7-1-2和电感器7-1-2形成的无源滤波器7-1 电阻器7-1-3由相位A,B和C形成,每相的无源滤波器7-1形成为三相结构,其中开关7-3和电压源转换器7-4 通过变压器7-2连接,并且在电压源转换器7-4中,点火单元7-7的V1〜V6分别与半导体器件V1〜V6的晶体管的基极连接,并且控制单元 连接有信号检测单元7-5的7-6与点火单元7-7连接,从而去除11和13次谐波。
    • 9. 发明申请
    • Integrated remote controller and method of selecting device controlled thereby
    • 一体化遥控器及其控制方法
    • US20070013775A1
    • 2007-01-18
    • US11415276
    • 2006-05-02
    • Jin Shin
    • Jin Shin
    • H04N7/18
    • G08C23/04G08C17/02G08C2201/20G08C2201/32
    • An integrated remote controller and a method of selecting a device controlled thereby are disclosed. The present invention is implemented such that it can store position data of devices to be controlled by the integrated remote controller; recognize devices around the integrated remote controller and displaying the devices; determine as to whether an angular velocity of the integrated remote controller is varied, if the recognized devices are plural; if the angular velocity is varied, sense movement direction of the integrated remote controller based on the angular velocity to search for a device to be controlled by a user; and display a control menu of the device to be controlled by the user.
    • 公开了集成的遥控器和选择由此控制的装置的方法。 本发明实现为可以存储要由集成遥控器控制的设备的位置数据; 识别集成遥控器周围的设备并显示设备; 确定集成遥控器的角速度是否变化,如果识别的装置是多个的; 如果角速度变化,则基于角速度来感测集成遥控器的移动方向,以搜索要由用户控制的设备; 并显示要由用户控制的设备的控制菜单。
    • 10. 发明申请
    • Solar cell and method of manufacturing the same
    • 太阳能电池及其制造方法
    • US20050016582A1
    • 2005-01-27
    • US10733261
    • 2003-12-12
    • Yoo LeeJin Shin
    • Yoo LeeJin Shin
    • H01L31/04H01L31/00
    • H01L31/03767H01L31/02167H01L31/075H01L31/1864Y02E10/548Y02P70/521
    • The present invention relates to a solar cell and a method of manufacturing the same wherein a deterioration phenomenon can be eliminated. The solar cell comprises a solar cell device region constructed by sequentially stacking a first electrode, a P-type semiconductor layer, an intrinsic absorber, an N-type semiconductor layer and a second electrode on a substrate; an insulating film formed on the second electrode; and a thin film heater pattern formed on the insulating film. According to the present invention, there is advantages in that a phenomenon of deterioration of properties of a thin film due to the Staebler-Wronski effect can be eliminated in such a manner that a thin film heater is mounted within the solar cell and then supplied with a current or voltage to cause the solar cell to be subjected to heat treatment after the solar cell has been exposed to light for a long time.
    • 太阳能电池及其制造方法技术领域本发明涉及能够消除劣化现象的太阳能电池及其制造方法。 太阳能电池包括通过在基板上依次堆叠第一电极,P型半导体层,本征吸收体,N型半导体层和第二电极而构成的太阳能电池器件区域; 形成在所述第二电极上的绝缘膜; 以及形成在绝缘膜上的薄膜加热器图案。 根据本发明,具有可以消除由于Staebler-Wronski效应导致的薄膜性能劣化的现象,即将薄膜加热器安装在太阳能电池内然后供给 在太阳能电池长时间暴露于光线之后,使太阳能电池经受热处理的电流或电压。