会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • High-frequency semiconductor device
    • 高频半导体器件
    • US06861906B2
    • 2005-03-01
    • US10204446
    • 2001-05-11
    • Kazutomi MoriShintaro ShinjoKousei MaemuraTeruyuki ShimuraKazuhiko NakaharaTadashi Takagi
    • Kazutomi MoriShintaro ShinjoKousei MaemuraTeruyuki ShimuraKazuhiko NakaharaTadashi Takagi
    • H01L27/06H03F3/19H03F3/21H03F3/68
    • H01L27/0605H03F3/19H03F3/211H03F2203/21178
    • A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.
    • 根据本发明的高频半导体器件实现了噪声特性的降低和增益的降低的改善,并且在抑制电流到多焦HBT的浓度的同时,提高了功率效率的降低。 在构成放大器10的第一级和输出级的多画面HBT中,构成对应于第一级的多画面HBT 12的基本HBT 14分别由连接到相应发射极的HBT 14a和发射极电阻14b组成 而构成与输出级相对应的多功能HBT16的基本HBT 18分别由连接到HBT 18a的相应基座的HBT 18a和基极电阻18c组成。 根据本发明的高频半导体器件可用作卫星通信,地面微波通信,移动通信等中使用的高输出功率放大器。
    • 6. 发明申请
    • CRYSTALLINE RESIN CURED PRODUCT, CRYSTALLINE RESIN COMPOSITE MATERIAL, AND METHOD FOR PRODUCING THE SAME
    • 结晶树脂固化产品,结晶树脂复合材料及其制造方法
    • US20100016473A1
    • 2010-01-21
    • US12312369
    • 2007-11-08
    • Masashi KajiKoichiro OgamiKazuhiko NakaharaTomomi Fukunaga
    • Masashi KajiKoichiro OgamiKazuhiko NakaharaTomomi Fukunaga
    • C08L63/00C08G59/06
    • C08G59/245C08G59/5033C08G59/621C08G63/42
    • Provided are a crystalline resin cured product which shows high thermal conductivity, low thermal expansion, high heat resistance, low moisture absorption, and good gas barrier properties and a crystalline resin composite material produced therefrom. Further provided is a method for producing the crystalline resin cured product and the crystalline resin composite material. The crystalline resin cured product is obtained by the reaction of an aromatic diglycidyl compound or a diglycidyl resin with an aromatic dihydroxy compound or with a dihydroxy resin and it shows a heat of melting of 10 J/g or more in differential thermal analysis while the endothermic peak corresponding to the melting appears in the range of 120 to 320° C. The crystalline resin composite material is obtained by combining the crystalline resin cured product with a filler or a base material. The crystalline resin cured product has a unit represented by -A-O—CH2—CH(OH)—CH2—O—B—, wherein A and B are divalent aromatic groups.
    • 提供一种显示出高导热性,低热膨胀,高耐热性,低吸湿性和良好阻气性的结晶树脂固化产物和由其制备的结晶树脂复合材料。 另外提供了结晶性树脂固化物和结晶性树脂复合材料的制造方法。 结晶性树脂固化物通过芳香族二缩水甘油基化合物或二缩水甘油基树脂与芳香族二羟基化合物或二羟基树脂的反应而得到,并且在差热分析中显示出10J / g以上的熔融热,同时吸热 对应于熔化的峰出现在120〜320℃的范围内。结晶性树脂复合材料通过将结晶性树脂固化物与填料或基材结合而得到。 结晶性树脂固化物具有由-A-O-CH 2 -CH(OH)-CH 2 -O-B-表示的单元,其中A和B是二价芳族基团。
    • 8. 发明授权
    • Variable attenuation microwave attenuator
    • 可变衰减微波衰减器
    • US5502421A
    • 1996-03-26
    • US409043
    • 1995-03-23
    • Kazuhiko Nakahara
    • Kazuhiko Nakahara
    • H03H7/06H01P1/22H03H7/25H03H11/24H03H7/24
    • H03H11/245
    • A variable attenuation microwave attenuator includes input and output terminals, a high-pass filter having an electrical length of 90.degree. and transmitting signals with frequencies higher than a cut-off frequency, a first variable resistor connected between the input terminal and an input end of the high-pass filter, and a second variable resistor connected between an output end of the high-pass filter and the output terminal, wherein input signals applied to the input terminal are attenuated by the first and second variable resistors before and after the high-pass filter. Therefore, the variable attenuator can be a lumped parameter circuit, i.e., the high-pass filter including two inductors and a capacitor, without using a transmission line as in the prior art device, so that the size of the device is significantly reduced. Further, since the resistance values of the first and second variable resistors do not change discretely but change continuously, a lot of different values of attenuation can be obtained with high precision. As a result, the gain (attenuation amount) can be controlled with high precision.
    • 可变衰减微波衰减器包括输入和输出端子,电气长度为90度的高通滤波器和传输频率高于截止频率的信号;第一可变电阻器,连接在输入端子和输入端子的输入端之间 高通滤波器和连接在高通滤波器的输出端和输出端之间的第二可变电阻器,其中施加到输入端子的输入信号由高频滤波器之前和之后的第一和第二可变电阻器衰减, 通过滤波器。 因此,可变衰减器可以是集中参数电路,即包括两个电感器和电容器的高通滤波器,而不使用如现有技术的器件中的传输线,使得器件的尺寸显着降低。 此外,由于第一和第二可变电阻器的电阻值不是离散地改变而是连续变化,所以可以以高精度获得大量不同的衰减值。 结果,可以高精度地控制增益(衰减量)。
    • 9. 发明授权
    • Microwave switch circuit and an antenna apparatus
    • 微波开关电路和天线装置
    • US5485130A
    • 1996-01-16
    • US378876
    • 1995-01-24
    • Kazuhiko NakaharaTakuo Kashiwa
    • Kazuhiko NakaharaTakuo Kashiwa
    • H01P1/15H01P5/02
    • H01P1/15
    • A microwave switch circuit includes a first impedance conversion circuit, one end of which is connected to an input terminal; a resonance circuit connected between an output of the first impedance conversion circuit and ground and including a parallel connection of a field effect transistor and a resonance inductor; and a second impedance conversion circuit connected between the output of the first impedance conversion circuit and an output terminal. One microwave switch circuit may be connected between an antenna terminal and a signal input terminal and another microwave switch circuit may be connected between the antenna terminal and a signal receiving terminal. The microwave switch circuit output terminal and input terminal may have an impedance of 50 .OMEGA. and the output of the first impedance conversion circuit may have an impedance lower than 50 .OMEGA.. The microwave switch circuit may include one-fourth wavelength transmission lines as the first and second impedance conversion circuits. Consequently, the maximum allowable value of the incident power is increased and withstand power is increased in an antenna switch circuit.
    • 微波开关电路包括第一阻抗转换电路,其一端连接到输入端; 连接在所述第一阻抗转换电路的输出和地之间并包括场效应晶体管和谐振电感器的并联连接的谐振电路; 以及连接在第一阻抗转换电路的输出端和输出端子之间的第二阻抗变换电路。 一个微波开关电路可以连接在天线端子和信号输入端子之间,另一个微波开关电路可以连接在天线端子和信号接收端子之间。 微波开关电路输出端子和输入端子的阻抗可以为50欧姆,第一阻抗转换电路的输出阻抗可能低于50欧姆。 微波开关电路可以包括作为第一和第二阻抗转换电路的四分之一波长传输线。 因此,在天线开关电路中,入射功率的最大允许值增加并且耐受功率增加。