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1. 发明授权

US08256289B2 Angular rate sensor 有权
标题翻译：角速度传感器
公开(公告)号：US08256289B2
公开(公告)日：2012-09-04
申请号：US12923971
申请日：2010-10-19
申请人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
发明人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
IPC分类号： G01P9/04
CPC分类号： G01C19/5698
摘要： An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.
摘要翻译：角速率传感器包括具有形成x-y平面的第一和第二表面的压电膜，并且当角速率传感器经历围绕x方向的旋转运动时，利用科里奥利力作用的扰动质量相干振动的弹性声波。第一弹性声波通过驱动传感器在压电膜中激发，并且由与角速率传感器本身的旋转运动的角速度成比例的科里奥利力产生的第二弹性声波由检测换能器检测。角速率传感器还包括至少第一电极，其设置在压电膜的第一表面上，用于在其中激发第一弹性声波的膜的下表面处排出由于压电效应引起的表面电荷。

2. 发明授权

US07900512B2 Angular rate sensor 有权
标题翻译：角速度传感器
公开(公告)号：US07900512B2
公开(公告)日：2011-03-08
申请号：US11878441
申请日：2007-07-24
申请人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
发明人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
IPC分类号： G01P9/04
CPC分类号： G01C19/5698
摘要： An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.
摘要翻译：角速率传感器包括具有形成x-y平面的第一和第二表面的压电膜，并且当角速率传感器经历围绕x方向的旋转运动时，利用科里奥利力作用的扰动质量相干振动的弹性声波。第一弹性声波通过驱动传感器在压电膜中激发，并且由与角速率传感器本身的旋转运动的角速度成比例的科里奥利力产生的第二弹性声波由检测换能器检测。角速率传感器还包括至少第一电极，其设置在压电膜的第一表面上，用于在其中激发第一弹性声波的膜的下表面处排出由于压电效应引起的表面电荷。

3. 发明申请

US20110041605A1 Angular rate sensor 有权
公开(公告)号：US20110041605A1
公开(公告)日：2011-02-24
申请号：US12923971
申请日：2010-10-19
申请人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
发明人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
IPC分类号： G01C19/56
CPC分类号： G01C19/5698
摘要： An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.

4. 发明申请

US20110041604A1 Angular rate sensor 审中-公开
公开(公告)号：US20110041604A1
公开(公告)日：2011-02-24
申请号：US12923970
申请日：2010-10-19
申请人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
发明人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
IPC分类号： G01C19/56
CPC分类号： G01C19/5698
摘要： An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.

5. 发明申请

US20080028855A1 Angular rate sensor 有权
标题翻译：角速度传感器
公开(公告)号：US20080028855A1
公开(公告)日：2008-02-07
申请号：US11878441
申请日：2007-07-24
申请人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
发明人： Kazuhiko Kano , Akihiko Teshigahara , Kazuki Arakawa , Kazushi Asami
IPC分类号： G01C19/00
CPC分类号： G01C19/5698
摘要： An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.
摘要翻译：角速率传感器包括具有形成x-y平面的第一和第二表面的压电膜，并且当角速率传感器经历围绕x方向的旋转运动时，利用科里奥利力作用的扰动质量相干振动的弹性声波。第一弹性声波通过驱动传感器在压电膜中激发，并且由与角速率传感器本身的旋转运动的角速度成比例的科里奥利力产生的第二弹性声波由检测换能器检测。角速率传感器还包括至少第一电极，其设置在压电膜的第一表面上，用于在其中激发第一弹性声波的膜的下表面处排出由于压电效应引起的表面电荷。

6. 发明授权

US07105902B2 Optical device having movable portion and method for manufacturing the same 失效
标题翻译：具有可动部的光学装置及其制造方法
公开(公告)号：US07105902B2
公开(公告)日：2006-09-12
申请号：US10752588
申请日：2004-01-08
申请人： Kazushi Asami , Kazuhiko Kano , Tetsuo Y Shioka
发明人： Kazushi Asami , Kazuhiko Kano , Tetsuo Y Shioka
IPC分类号： H01L29/82
CPC分类号： G02B26/0841
摘要： An optical device includes a semiconductor substrate having an opening, a support member disposed on the substrate, and a movable portion disposed on the opening of the substrate. The movable portion is supported by the support member so that the movable portion is movable. The device has a large scanning angle. Further, the device can scan widely at any frequency.
摘要翻译：光学装置包括具有开口的半导体衬底，设置在衬底上的支撑构件和设置在衬底的开口上的可移动部分。可移动部分由支撑构件支撑，使得可移动部分是可移动的。该装置具有较大的扫描角度。此外，该设备可以以任何频率广泛扫描。

7. 发明申请

US20110244687A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20110244687A1
公开(公告)日：2011-10-06
申请号：US13073173
申请日：2011-03-28
申请人： Junji OOHARA , Kazushi Asami
发明人： Junji OOHARA , Kazushi Asami
IPC分类号： H01L21/306
CPC分类号： H01L21/30655 , H01J37/321 , H01J37/32972 , H01L22/26
摘要： In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width.
摘要翻译：在用于形成在衬底中具有M个不同宽度的沟槽的工艺中，交替执行钝化步骤和蚀刻步骤。钝化步骤包括通过将在腔室中引入的气体转化为等离子体来在沟槽的底部沉积钝化层。蚀刻步骤包括去除沟槽底部的钝化层并向底部施加反应离子蚀刻以增加沟槽的深度。当去除具有第N个最小宽度的沟槽底部的钝化层时，蚀刻步骤还包括将反应离子蚀刻的能量设定为预定值。该值允许具有第N个最小宽度的沟槽的蚀刻量等于或大于具有（N + 1）个最小宽度的沟槽的蚀刻量。

8. 发明申请

US20050054153A1 Method for manufacturing movable portion of semiconductor device 有权
标题翻译：制造半导体器件的可移动部分的方法
公开(公告)号：US20050054153A1
公开(公告)日：2005-03-10
申请号：US10936539
申请日：2004-09-09
申请人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
发明人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
IPC分类号： B81C1/00 , H01L21/306 , H01L29/80 , H05K3/06
CPC分类号： B81C1/00619 , B81C2201/0112
摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.
摘要翻译：一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

9. 发明授权

US08471363B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08471363B2
公开(公告)日：2013-06-25
申请号：US13246065
申请日：2011-09-27
申请人： Kazushi Asami , Yasuhiro Kitamura
发明人： Kazushi Asami , Yasuhiro Kitamura
IPC分类号： H01L21/02 , H01L21/8222
CPC分类号： H01L28/91 , H01L21/76898 , H01L23/481 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate, a first single conductor, a single insulator, and a second single conductor. The substrate includes first and second regions located adjacent to each other. The first region has blind holes, each of which has an opening on a front surface of the substrate. The second region has a through hole penetrating the substrate. A width of each blind hole is less than a width of the through hole. The first single conductor is formed on the front surface of the substrate in such a manner that an inner surface of each blind hole and an inner surface of the through hole are covered with the first single conductor. The single insulator is formed on the first single conductor. The second single conductor is formed on the single insulator and electrically insulated form the first single conductor.
摘要翻译：半导体器件包括衬底，第一单导体，单绝缘体和第二单导体。衬底包括彼此相邻定位的第一和第二区域。第一区域具有盲孔，每个盲孔在基板的前表面上具有开口。第二区域具有穿透基板的通孔。每个盲孔的宽度小于通孔的宽度。第一单导体形成在基板的前表面上，使得每个盲孔的内表面和通孔的内表面被第一单导体覆盖。单个绝缘体形成在第一单个导体上。第二单导体形成在单个绝缘体上并且电绝缘形成第一单导体。

10. 发明授权

US08461052B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08461052B2
公开(公告)日：2013-06-11
申请号：US13073173
申请日：2011-03-28
申请人： Junji Oohara , Kazushi Asami
发明人： Junji Oohara , Kazushi Asami
IPC分类号： H01L21/461
CPC分类号： H01L21/30655 , H01J37/321 , H01J37/32972 , H01L22/26
摘要： In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width.
摘要翻译：在用于形成在衬底中具有M个不同宽度的沟槽的工艺中，交替执行钝化步骤和蚀刻步骤。钝化步骤包括通过将在腔室中引入的气体转化为等离子体来在沟槽的底部沉积钝化层。蚀刻步骤包括去除沟槽底部的钝化层并向底部施加反应离子蚀刻以增加沟槽的深度。当去除具有第N个最小宽度的沟槽底部的钝化层时，蚀刻步骤还包括将反应离子蚀刻的能量设定为预定值。该值允许具有第N个最小宽度的沟槽的蚀刻量等于或大于具有（N + 1）个最小宽度的沟槽的蚀刻量。

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