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    • 2. 发明申请
    • METHOD FOR PRODUCING A THIN FILM MADE OF LEAD ZIRCONATE TITANATE
    • 生产铅锌酸铅薄膜的方法
    • US20140049136A1
    • 2014-02-20
    • US13985646
    • 2012-02-13
    • Carsten GiebelerNeil Conway
    • Carsten GiebelerNeil Conway
    • H01L41/316H01L41/187
    • H01L41/1876C23C14/0036C23C14/088C23C14/3464H01L21/02197H01L21/02266H01L37/025H01L41/316
    • The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.3, and the deposition rate of lead is selected to be sufficiently low, depending on the substrate temperature and the total deposition rate of lead, zirconium, and titanium, for an X-ray diffractometer graph of the 111-oriented lead zirconate titanate to have a significant peak value (19) in a diffraction angle range from 33 to 35.5°; and completing the thin film.
    • 本发明涉及一种在111取向的钙钛矿结构中制造由锆钛酸铅制成的薄膜的方法,包括以下步骤:提供基片温度高于450℃的基片和引线靶,锆靶, 和钛靶; 通过将铅,锆和钛从各个靶溅射到衬底上来施加薄膜,其中铅,锆和钛的总沉积速率大于10nm / min,锆的沉积速率选择在 锆的原子浓度相对于锆的原子浓度与钛一起在薄膜中的原子浓度在0.2和0.3之间的方式,并且根据衬底温度和总沉积选择铅的沉积速率足够低 对于111取向铅锆钛酸铅的X射线衍射仪图,在33〜35.5°的衍射角范围内具有显着的峰值(19)的铅,锆和钛的比率; 并完成薄膜。
    • 6. 发明授权
    • Infrared light sensor having a high signal voltage and a high signal/noise ratio
    • 红外光传感器具有高信号电压和高信噪比
    • US08963087B2
    • 2015-02-24
    • US13264908
    • 2010-04-16
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • G01J5/34G01J5/08
    • G01J5/34G01J5/08G01J5/0846
    • An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
    • 一种用于红外光检测器(1)的红外光传感器,包括基板膜部分(2)和至少两个传感器芯片(7至10),它们在基板膜部分(2)上彼此紧固并且每个 包括由热敏材料制成并与基底电极(12)和头部电极(13)电接触的层元件(11),并且被布置成使得在每个情况下在头部电极之间存在电压差 (11)被红外线照射时,各层元件(11)的基极(13)和基极(12) 和连接线(14〜16),用于两个相邻布置的传感器芯片(7至10),耦合线将一个传感器芯片(7至9)的头部电极(13)和基极(12) )以使得传感器芯片(7至10)的层元件(11)连接在串联电路中,该串联电路具有一个基极电极 (17)和其另一端的头电极(18)中的一个,串联电路的总电压差可以抽头作为层元件(11)的各个电压差之和, 。
    • 7. 发明申请
    • Device to detect thermal radiation with high resolution method to manufacture and use the device
    • 以高分辨率方式检测热辐射的装置制造和使用该装置
    • US20110049369A1
    • 2011-03-03
    • US12680286
    • 2008-09-29
    • Carsten GiebelerMatthias SchreiterUwe Rettig
    • Carsten GiebelerMatthias SchreiterUwe Rettig
    • G01J5/02G01R3/00
    • H01L31/101G01J5/02G01J5/024G01J5/0245G01J5/04G01J5/046G01J5/06G01J5/34H01L37/02Y10T29/49007
    • A device to detect thermal radiation has a membrane and at least two detector elements that are respectively set up to transduce thermal radiation into an electrical signal and are mounted situated next to one another on the membrane, wherein at least one heat dissipation path is provided on the side of the membrane facing towards the detector elements and/or on the side of the membrane facing away from the detector elements, which heat dissipation path has a higher heat conductivity than the membrane and is connected with the detector elements in a heat-conductive manner via the membrane so that heat can be discharged from the detector elements with the heat dissipation path, whereby the response time of the detector elements is short; and wherein at least one heat barrier that has a lower heat conductivity than the membrane and extends between the detector elements is provided integrated into the membrane, such that a heat conduction in the membrane from the one detector element to the other detector element is prevented by the heat barrier; whereby the crosstalk of the detector elements is low.
    • 用于检测热辐射的装置具有膜和至少两个检测器元件,其分别设置为将热辐射转换成电信号并且彼此相邻地安装在膜上,其中至少一个散热路径设置在 膜的侧面朝向检测器元件和/或在膜的远离检测器元件的侧面上,该散热路径具有比膜更高的导热性并且与导热的检测器元件连接 通过隔膜使得热量可以从散热路径从检测器元件排出,从而检测器元件的响应时间短; 并且其中集成在所述膜中的至少一个具有比所述膜低的热导率并且在所述检测器元件之间延伸的热屏障被提供,使得通过所述膜从所述一个检测器元件到另一检测器元件的热传导被 热障; 从而检测器元件的串扰低。
    • 8. 发明申请
    • DEVICE WITH A SANDWICH STRUCTURE FOR DETECTING THERMAL RADIATION, AND METHOD FOR THE PRODUCTION THEREOF
    • 具有用于检测热辐射的三面体结构的装置及其生产方法
    • US20100264311A1
    • 2010-10-21
    • US12601613
    • 2008-05-28
    • Carsten GiebelerMatthias SchreiterJörg Zapf
    • Carsten GiebelerMatthias SchreiterJörg Zapf
    • G01J5/10H01L21/02
    • H01L27/16G01J5/04G01J5/045G01J5/10G01J5/34H01L27/14618H01L2924/0002H01L2924/00
    • In a device for the detection of thermal radiation which and a method for production of such a device, a stack is formed with at least one detector support having at least one detector element for the conversion of the thermal radiation into an electric signal, at least one circuit support with at least one read-out circuit for reading out the electrical signal and at least one cover to shield the detector element, wherein the detector support and the cover are so arranged with respect to one another that a first stack cavity bounded by the detector support and the cover is provided between the detector element of the detector support and the cover and that the circuit support and the detector support are so arranged with respect to one another that at least one second stack cavity bounded by the circuit support and the detector support is provided between detector support and the circuit support and that the first hollow stack support and/or the second stack cavity is evacuated or can be evacuated. Preferably, the detector support, circuit support and cover are made of silicon. The manufacturing operation takes place at wafer-level. Functionalized silicon-substrates are stacked upon one another, firmly bonded together and subsequently sub-divided. Preferably, the detector elements are pyro-electric detector elements. The device finds application in motion detector, presence reporters and thermal-image cameras.
    • 在用于检测热辐射的装置及其制造方法中,堆叠形成有至少一个具有至少一个用于将热辐射转换成电信号的检测器元件的检测器支架,至少 一个电路支撑件,具有用于读出电信号的至少一个读出电路和用于屏蔽检测器元件的至少一个盖子,其中检测器支撑件和盖子相对于彼此布置成使得第一堆叠腔体被 检测器支撑件和盖被设置在检测器支撑件的检测器元件和盖之间,并且电路支撑件和检测器支撑件相对于彼此布置成使得由电路支撑件限定的至少一个第二堆叠空腔和 检测器支撑件设置在检测器支撑件和电路支撑件之间,并且第一中空堆叠支撑件和/或第二堆叠腔体被抽空或可以 被疏散 优选地,检测器支撑件,电路支撑件和盖子由硅制成。 制造操作在晶圆级进行。 功能化的硅衬底彼此堆叠,牢固地结合在一起并随后被细分。 优选地,检测器元件是热电探测器元件。 该装置在运动检测器,存在记录器和热像摄像机中找到应用。
    • 10. 发明申请
    • INFRARED LIGHT SENSOR HAVING A HIGH SIGNAL VOLTAGE AND A HIGH SIGNAL/NOISE RATIO
    • 具有高信号电压和高信号/噪声比的红外光传感器
    • US20120132807A1
    • 2012-05-31
    • US13264908
    • 2010-04-16
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • Carsten GiebelerJeffrey WrightTim Chamberlain
    • G01J5/10
    • G01J5/34G01J5/08G01J5/0846
    • An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
    • 一种用于红外光检测器(1)的红外光传感器,包括基板膜部分(2)和至少两个传感器芯片(7至10),它们在基板膜部分(2)上彼此紧固并且每个 包括由热敏材料制成并与基底电极(12)和头部电极(13)电接触的层元件(11),并且被布置成使得在每个情况下在头部电极之间存在电压差 (11)被红外线照射时,各层元件(11)的基极(13)和基极(12) 和连接线(14〜16),用于两个相邻布置的传感器芯片(7至10),耦合线将一个传感器芯片(7至9)的头部电极(13)和基极(12) )以使得传感器芯片(7至10)的层元件(11)连接在串联电路中,该串联电路具有一个基极电极 (17)和其另一端的头电极(18)中的一个,串联电路的总电压差可以抽头作为层元件(11)的各个电压差之和, 。