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1. 发明授权

US5374412A Highly polishable, highly thermally conductive silicon carbide 失效
标题翻译：高度可抛光，高导热性的碳化硅
公开(公告)号：US5374412A
公开(公告)日：1994-12-20
申请号：US959880
申请日：1992-10-13
申请人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
发明人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
IPC分类号： C01B31/36 , B28B21/42 , C04B35/565 , C04B35/571 , C23C16/00 , C23C16/01 , C23C16/32 , C23C16/44 , G11B5/73 , G11B5/84
CPC分类号： C23C16/01 , C04B35/571 , C23C16/325 , C23C16/4404
摘要： Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to
摘要翻译：碳化硅通过化学气相沉积在1340°-1380℃，沉积室压力为180-200托，H 2 /甲基三氯硅烷比为4-10，沉积速率为1-2微米/分钟的条件下生产。此外，作为气流的一部分供应的H2含有少于约百万分之一（ppm）O 2气体，并且提供各种装置以从沉积室排除颗粒材料。碳化硅可以在Talystep机械剖析仪上测得的<5 ANGSTROM RMS，具有至少约300W / mk的导热系数。碳化硅特别适用于需要高抛光性和导热性的应用，例如硬盘驱动器和头盘组件的读/写头以及需要非常高的抛光的光学装置。

2. 发明授权

US5612132A Chemical vapor deposition-produced silicon carbide having improved properties 失效
标题翻译：化学气相沉积生产的具有改进性能的碳化硅
公开(公告)号：US5612132A
公开(公告)日：1997-03-18
申请号：US455007
申请日：1995-05-31
申请人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
发明人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44
CPC分类号： C04B35/571 , C23C16/01 , C23C16/325 , C23C16/4404 , Y10S438/931 , Y10T428/26
摘要： .beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.
摘要翻译：通过化学气相沉积制造在可见光和红外区域中透光的β-碳化硅。沉积条件是温度在1400°-1500℃范围内，压力50托或更低，H 2 /甲基三氯硅烷摩尔比为4-30，沉积速率为1μm或更小。

3. 发明授权

US06811040B2 Wafer holding apparatus 有权
标题翻译：晶圆保持装置
公开(公告)号：US06811040B2
公开(公告)日：2004-11-02
申请号：US10191192
申请日：2002-07-09
申请人： Thomas Payne , Jitendra S. Goela , Lee E. Burns , Michael A. Pickering
发明人： Thomas Payne , Jitendra S. Goela , Lee E. Burns , Michael A. Pickering
IPC分类号： A47G1908
CPC分类号： H01L21/67303 , H01L21/67313 , Y10S206/832
摘要： A wafer holding apparatus composed of a plurality of rods joined at opposite ends by endplates. Each rod at each end is secured to the endplates by a mechanical dovetail joint. The dovetail joint secures the rods to the endplates without the need for sealing or coating agents. Also, auxiliary mechanical components such as nuts and bolts to secure the joint components need not be employed to secure the joint. Each rod has multiple grooves or slits for placing multiple semiconductor wafers that are to be processed in processing chambers. The wafer holding apparatus is oxidation resistant, chemical resistant and thermal shock resistant.
摘要翻译：一种晶片保持装置，由多个由端板在相对端连接的杆构成。每个端部的每个杆通过机械燕尾接头固定到端板。燕尾接头将杆固定到端板上，而不需要密封或涂层剂。此外，不需要使用用于固定接头部件的辅助机械部件，例如螺母和螺栓来固定接头。每个杆具有用于放置要在处理室中处理的多个半导体晶片的多个凹槽或狭缝。晶片保持装置抗氧化，耐化学腐蚀和耐热冲击。

4. 发明授权

US5604151A Chemical vapor deposition-produced silicon carbide having improved properties 失效
公开(公告)号：US5604151A
公开(公告)日：1997-02-18
申请号：US439034
申请日：1995-05-11
申请人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
发明人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44 , H01L21/20
CPC分类号： C04B35/571 , C23C16/01 , C23C16/325 , C23C16/4404 , Y10S438/931 , Y10T428/26
摘要： .beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.

5. 发明授权

US5474613A Chemical vapor deposition furnace and furnace apparatus 失效
标题翻译：化学气相沉积炉和炉装置
公开(公告)号：US5474613A
公开(公告)日：1995-12-12
申请号：US432342
申请日：1995-05-01
申请人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
发明人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
IPC分类号： C01B31/36 , B28B21/42 , C04B35/565 , C04B35/571 , C23C16/00 , C23C16/01 , C23C16/32 , C23C16/44 , G11B5/73 , G11B5/84
CPC分类号： C23C16/01 , C04B35/571 , C23C16/325 , C23C16/4404
摘要： Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to
摘要翻译：碳化硅通过化学气相沉积在1340°-1380℃，沉积室压力为180-200托，H 2 /甲基三氯硅烷比为4-10，沉积速率为1-2微米/分钟的条件下生产。此外，作为气流的一部分供应的H2含有少于约百万分之一（ppm）O 2气体，并且提供各种装置以从沉积室排除颗粒材料。碳化硅可以在Talystep机械剖析仪上测得的<5 ANGSTROM RMS，具有至少约300W / mk的导热系数。碳化硅特别适用于需要高抛光性和导热性的应用，例如硬盘驱动器和头盘组件的读/写头以及需要非常高的抛光的光学装置。

6. 发明授权

US5354580A Triangular deposition chamber for a vapor deposition system 失效
标题翻译：用于气相沉积系统的三角沉积室
公开(公告)号：US5354580A
公开(公告)日：1994-10-11
申请号：US073862
申请日：1993-06-08
申请人： Jitendra S. Goela , Lee E. Burns , ALexander Teverovsky , James C. MacDonald
发明人： Jitendra S. Goela , Lee E. Burns , ALexander Teverovsky , James C. MacDonald
IPC分类号： C23C16/32 , C23C16/01 , C23C16/44 , C23C16/455 , C30B28/14 , C30B29/36 , C23C16/00
CPC分类号： C23C16/44 , C23C16/01
摘要： A process and apparatus for the manufacture of chemical vapor deposited silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell where material is deposited by chemical vapor deposition. The triangular cell provides a large surface area for deposition while occupying a minimum amount of the furnace floor surface area. The triangular cell has the added benefit in that deposited silicon carbide is of negligible thickness at the edges thereby permitting easy separation of material with a minimum of post deposition machining.
摘要翻译：用于制造化学气相沉积碳化硅的方法和装置，其包括将反应气体输送到三角化学气相沉积池，其中材料通过化学气相沉积沉积。三角形电池提供大的表面积用于沉积，同时占据最小量的炉底面积。三角形电池具有附加的益处，因为沉积的碳化硅在边缘处的厚度可忽略不计，从而允许以最小的后沉积加工容易地分离材料。

7. 发明授权

US5683028A Bonding of silicon carbide components 失效
标题翻译：碳化硅部件的粘接
公开(公告)号：US5683028A
公开(公告)日：1997-11-04
申请号：US646737
申请日：1996-05-03
申请人： Jitendra S. Goela , Lee E. Burns
发明人： Jitendra S. Goela , Lee E. Burns
IPC分类号： B23K1/19 , C04B37/00 , H01L21/683 , B23K103/16 , B23K31/00
CPC分类号： C04B37/005 , B23K1/19 , C04B2235/6586 , C04B2237/083 , C04B2237/16 , C04B2237/365 , C04B2237/708 , C04B2237/72 , C04B2237/84 , C04B2237/88
摘要： A method of bonding a first silicon carbide part to a second silicon carbide part is provided. The first silicon carbide part provides a receiving female joint member and the second silicon carbide part provides an insertion male joint member. The male and female members each have facing sidewalls substantially parallel to a direction in which the male member is inserted into the female member. The male and female joint members are configured to provide an average gap(s) between the facing sidewalls of the joint members which is up to about 0.003 inch (0.76 mm). The female joint member further has reservoir means for containing silicon when the male joint member is fully inserted into the female joint member, the reservoir means being in fluid communication with the gap(s). The reservoir means is filled with solid-state silicon, e.g., in powder form. The male joint member is inserted into the female joint member, and the first and second silicon carbide parts are heated to above the melting point of silicon for a time sufficient for the silicon to melt, whereupon molten silicon is drawn into the gap(s) between the facing sidewalls of the male and female joint members by capillary action. Subsequent cooling of the assembled parts solidifies the silicon, thereby securing the joint between the male and female members with solidified silicon forming a bond between the facing sidewalls of the male and female joint members.
摘要翻译：提供了将第一碳化硅部分接合到第二碳化硅部分的方法。第一碳化硅部分提供接收阴接头构件，第二碳化硅部分提供插入阳接头构件。阳构件和阴构件各自具有基本平行于阳构件插入阴构件的方向的面向侧壁。公接头构件和阴接头构件构造成在接合构件的相对侧壁之间提供高达约0.003英寸（0.76mm）的平均间隙。阴接头构件还具有用于在阳接头构件完全插入阴接头构件时容纳硅的储存装置，储存装置与间隙流体连通。储存装置填充有例如粉末形式的固态硅。将阳接头构件插入阴接头构件中，并将第一和第二碳化硅部件加热至高于硅的熔点足以使硅熔化的时间，然后将熔融硅吸入间隙中，通过毛细管作用在雄性和雌性关节成员的面对侧壁之间。随后的组装部件的冷却使硅固化，从而通过凝固硅固定阳构件和阴构件之间的接头，从而在阳接头和阴接头构件的相对的侧壁之间形成结合。

8. 发明授权

US5465184A Hard disc drives and read/write heads formed from highly thermally conductive silicon carbide 失效
标题翻译：由高导热性碳化硅形成的硬盘驱动器和读/写头
公开(公告)号：US5465184A
公开(公告)日：1995-11-07
申请号：US340981
申请日：1994-11-17
申请人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
发明人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
IPC分类号： C01B31/36 , B28B21/42 , C04B35/565 , C04B35/571 , C23C16/00 , C23C16/01 , C23C16/32 , C23C16/44 , G11B5/73 , G11B5/84 , G11B5/012 , G11B5/147 , G11B5/82
CPC分类号： C23C16/01 , C04B35/571 , C23C16/325 , C23C16/4404
摘要： Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to
摘要翻译：碳化硅通过化学气相沉积在1340°-1380℃，沉积室压力为180-200托，H 2 /甲基三氯硅烷比为4-10，沉积速率为1-2微米/分钟的条件下生产。此外，作为气流的一部分供应的H2含有少于约百万分之一（ppm）O 2气体，并且提供各种装置以从沉积室排除颗粒材料。碳化硅可以在Talystep机械剖析仪上测得的<5 ANGSTROM RMS，具有至少约300W / mk的导热系数。碳化硅特别适用于需要高抛光性和导热性的应用，例如硬盘驱动器和头盘组件的读/写头以及需要非常高的抛光的光学装置。

9. 发明授权

US5654034A Composite thermocouple protection tubes 失效
公开(公告)号：US5654034A
公开(公告)日：1997-08-05
申请号：US655717
申请日：1996-08-07
申请人： Kenneth F. Tulloch , Lee E. Burns , Hemant D. Desai , Raymond L. Taylor
发明人： Kenneth F. Tulloch , Lee E. Burns , Hemant D. Desai , Raymond L. Taylor
IPC分类号： G01K1/08 , G01K1/10 , G01K7/02 , C23C16/32
CPC分类号： G01K1/10 , Y10T428/13 , Y10T428/131 , Y10T428/22 , Y10T428/232 , Y10T428/239
摘要： A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic tube, inserting a mandrel through the tube to extend forward of the front end, and depositing silicon carbide by chemical vapor deposition over at least a front portion of the ceramic tube and over the forward-extending portion of the mandrel. Subsequent removal of the mandrel completes the production of the protection tube.

10. 发明授权

US5618594A Composite thermocouple protection tubes 失效
标题翻译：复合热电偶保护管
公开(公告)号：US5618594A
公开(公告)日：1997-04-08
申请号：US421177
申请日：1995-04-13
申请人： Kenneth F. Tulloch , Lee E. Burns , Hemandt D. Desai , Raymond L. Taylor
发明人： Kenneth F. Tulloch , Lee E. Burns , Hemandt D. Desai , Raymond L. Taylor
IPC分类号： G01K1/08 , G01K1/10 , G01K7/02 , B29D22/00 , A47G19/22 , B32B1/04
CPC分类号： G01K1/10 , Y10T428/13 , Y10T428/131 , Y10T428/22 , Y10T428/232 , Y10T428/239
摘要： A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic tube, inserting a mandrel through the tube to extend forward of the front end, and depositing silicon carbide by chemical vapor deposition over at least a front portion of the ceramic tube and over the forward-extending portion of the mandrel. Subsequent removal of the mandrel completes the production of the protection tube.
摘要翻译：半导体保护管是陶瓷管，其具有覆盖管的至少一部分的碳化硅层，邻近管的开放前端并且在开口端的前方延伸以形成中空的封闭端尖端。保护管是通过提供陶瓷管，通过管插入心轴以向前延伸的方式形成的，并且通过化学气相沉积在至少陶瓷管的前部上并在前延伸部分之上沉积碳化硅的心轴。随后的心轴移除完成了保护管的生产。

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