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1. 发明授权

US06425191B1 Apparatus and method for reducing solvent residue in a solvent-type dryer for semiconductor wafers 有权
标题翻译：用于半导体晶片的溶剂型干燥器中减少溶剂残留的装置和方法
公开(公告)号：US06425191B1
公开(公告)日：2002-07-30
申请号：US09837815
申请日：2001-04-18
申请人： Rong-Hui Kao , Ming-Dar Guo , Jih-Churng Twu , Tsung-Chieh Tsai , Chia-Chun Cheng
发明人： Rong-Hui Kao , Ming-Dar Guo , Jih-Churng Twu , Tsung-Chieh Tsai , Chia-Chun Cheng
IPC分类号： F26B300
CPC分类号： H01L21/67034
摘要： An apparatus and a method for reducing solvent residue in a solvent-type dryer for drying semiconductor wafers have been disclosed. The apparatus is constructed by a tank body, a wafer carrier, an elevator means, a tank cover, a solvent vapor conduit and an exhaust means. The exhaust means is provided for fluid communication with a compartment in the tank cover such that any residual solvent vapor or any organic residue in the compartment left from the wafer drying cycle can be evacuated to a factory exhaust system. The present invention novel method for reducing solvent or organic residue in the dryer can be carried out, after the removal of the dried wafers from the dryer, by evacuating the compartment in the tank cover for a time period of between about 30 sec. and about 300 sec. until all residual solvent vapor or organic residue is evacuated.
摘要翻译：已经公开了用于干燥半导体晶片的溶剂型干燥器中用于还原溶剂残留物的装置和方法。该装置由罐体，晶片载体，电梯装置，罐盖，溶剂蒸气导管和排气装置构成。提供排气装置用于与罐盖中的隔室流体连通，使得离开晶片干燥循环的隔室中的任何残留溶剂蒸气或任何有机残余物可被排空到工厂排气系统。本发明的用于还原干燥机中的溶剂或有机残留物的新方法可以在从干燥器中除去干燥的晶片之后，通过将储罐盖中的隔室抽空约30秒的时间来进行。约300秒直到所有残留的溶剂蒸气或有机残余物被抽空。

2. 发明授权

US06503333B2 Method for cleaning semiconductor wafers with ozone-containing solvent 有权
公开(公告)号：US06503333B2
公开(公告)日：2003-01-07
申请号：US09726628
申请日：2000-11-30
申请人： Jih-Churng Twu , Rong-Hui Kao , Chia-Chun Cheng
发明人： Jih-Churng Twu , Rong-Hui Kao , Chia-Chun Cheng
IPC分类号： C23G102
CPC分类号： H01L21/67028 , B08B3/08 , B08B2203/005 , Y10S134/902
摘要： A method for cleaning a silicon wafer by a wet bench method with improved cleaning efficiency and without oxide formation is disclosed. In the method, the wafer may first be cleaned in a first cleaning solution that includes a base or an acid, and then the wafer is rinsed in a second solution that includes DI water and ozone. The ozone concentration in the DI water may be between about 1 ppm and about 20 ppm, and preferably between about 3 ppm and about 10 ppm. A diluted HF cleaning step may be utilized after the ozone/DI water rinsing step to remove any possible oxide formation on the silicon surface before a final rinsing step and drying step.

3. 发明授权

US06878578B1 Method for forming a high quality chemical oxide on a freshly cleaned silicon surface as a native oxide replacement 失效
标题翻译：在新鲜清洁的硅表面上形成高质量化学氧化物作为天然氧化物替代物的方法
公开(公告)号：US06878578B1
公开(公告)日：2005-04-12
申请号：US10134823
申请日：2002-04-26
申请人： Jih-Churng Twu , Tsung-Chieh Tsai , Roung-Hui Kao , Chia-Chun Cheng
发明人： Jih-Churng Twu , Tsung-Chieh Tsai , Roung-Hui Kao , Chia-Chun Cheng
IPC分类号： H01L21/28 , H01L21/306 , H01L21/336 , H01L21/8238 , H01L29/51
CPC分类号： H01L21/28211 , H01L21/02052 , H01L21/823857 , H01L29/51 , H01L29/6659
摘要： A continuous and integrated cleaning/preparation process is described to condition a silicon surface for the formation of a high quality ultra thin gate oxide described. The process is conducted with the wafer surface immersed in an aqueous solution the composition of which is varied continuously according to the steps of the process. The process includes the initial removal of contaminants and particulates followed by the removal of a native oxide. Next the silicon surface is dressed in the present of both HF and ozone by removing a thin surface layer. Any interfacial contamination or surface structural defects which lay under the native oxide are thereby removed. Next a high quality chemical oxide is grown by the action of the ozone in the aqueous bath. The chemical oxide is found to be of higher purity and structural quality than native oxide and provides a superior passivation of the active surface prior to gate oxidation. The chemical oxide is incorporated into the final gate oxide and, because of it's high quality, results in improved device performance of the final gate oxide.
摘要翻译：描述了连续且集成的清洁/制备方法以调节硅表面以形成所述的高质量超薄栅极氧化物。该工艺是将晶片表面浸入水溶液中进行的，该水溶液的组成根据该方法的步骤连续变化。该方法包括初始去除污染物和微粒，然后除去天然氧化物。接下来，通过去除薄的表面层，将硅表面穿过HF和臭氧的现在。由此除去在天然氧化物之下的任何界面污染物或表面结构缺陷。接下来，通过臭氧在水浴中的作用生长高质量的化学氧化物。发现化学氧化物具有比天然氧化物更高的纯度和结构质量，并且在栅极氧化之前提供优异的活性表面钝化。化学氧化物被结合到最终的栅极氧化物中，并且由于其高质量，导致最终栅极氧化物的器件性能的提高。

4. 发明授权

US06647998B2 Electrostatic charge-free solvent-type dryer for semiconductor wafers 有权
公开(公告)号：US06647998B2
公开(公告)日：2003-11-18
申请号：US09885772
申请日：2001-06-20
申请人： Jih-Churng Twu , Ming-Dar Guo , Tsung-Chieh Tsai , Sheng-Hsiung Tseng , Wei-Ming You , Yao-Pin Huang , Chia-Chun Cheng , Chin-Hsiung Ho , Ming Te More
发明人： Jih-Churng Twu , Ming-Dar Guo , Tsung-Chieh Tsai , Sheng-Hsiung Tseng , Wei-Ming You , Yao-Pin Huang , Chia-Chun Cheng , Chin-Hsiung Ho , Ming Te More
IPC分类号： B08B310
CPC分类号： H01L21/67034 , Y10S134/902
摘要： An electrostatic charge-free solvent-type dryer for drying semiconductor wafers after a wet bench process is disclosed in a preferred embodiment and in an alternate embodiment. In the preferred embodiment, the electrostatic charge-free solvent-type dryer is constructed by a tank body, a wafer carrier, an elevator means, a tank cover and a conduit for feeding the flow of solvent vapor. At least one of the tank cover, the conduit for feeding the flow of solvent vapor and the plurality of partition plates is fabricated of a non-electrostatic material such that electrostatic charge is not generated in the flow of solvent vapor. In the alternate embodiment, a deionizer is further provided in the tank cavity for producing a flux of positive ions to neutralize any negative ions that are possibly produced in the flow of solvent vapor.

5. 发明授权

US06500274B2 Apparatus and method for wet cleaning wafers without ammonia vapor damage 有权
标题翻译：湿法清洗晶片的装置和方法，无氨蒸汽损坏
公开(公告)号：US06500274B2
公开(公告)日：2002-12-31
申请号：US09761417
申请日：2001-01-16
申请人： Jih-Churng Twu , Ming-Dar Guo , Chia-Chun Cheng
发明人： Jih-Churng Twu , Ming-Dar Guo , Chia-Chun Cheng
IPC分类号： B08B304
CPC分类号： H01L21/67057 , B08B3/048 , B08B3/102 , Y10S134/902
摘要： An apparatus and a method for cleaning wafers by a wet bench technique without incurring ammonia vapor damages to the wafer surface are provided. The apparatus of a wet cleaning tank consists of a tank body for holding a quantity of a cleaning solution therein; a conduit mounted through and vertical to a bottom wall of the tank body for feeding an ammonia-containing solution into the tank body through an outlet; and a cup-shaped container mounted in an upside-down position over the outlet of the conduit for blocking ammonia vapor generated by the ammonia-containing solution from reaching an upper cavity of the tank body. The method for cleaning wafers may be practiced by first positioning a conduit vertically through and with an outside wall of the conduit sealingly engaging a bottom wall of a liquid tank with an outlet end of the conduit immersed in a cleaning solution in the tank; then mounting a cup-shaped container in an upside-down position over the outlet end of the conduit to collect any ammonia vapors exiting the conduit and preventing the vapor from reaching an upper portion of the tank cavity.
摘要翻译：提供了一种通过湿式工艺技术清洗晶片的装置和方法，而不会对晶片表面造成氨蒸汽损坏。湿式清洗槽的装置由用于在其中保持一定数量的清洗液的罐体组成; 通过并垂直于罐体的底壁安装的导管，用于通过出口将含氨溶液进料到罐体中; 以及安装在管道出口上方的倒置位置的杯形容器，用于阻止由含氨溶液产生的氨蒸气到达罐体的上腔体。用于清洁晶片的方法可以通过首先将导管垂直地定位在导管的外壁上并与其中的外壁密封地接合液体箱的底壁的同时将导管的出口端浸入在罐中的清洁溶液中来实施; 然后在管道的出口端上方倒置一个杯形容器，以收集离开管道的任何氨蒸汽，并防止蒸汽到达罐腔的上部。

6. 发明授权

US06405452B1 Method and apparatus for drying wafers after wet bench 有权
标题翻译：在湿式工作台上干燥晶片的方法和装置
公开(公告)号：US06405452B1
公开(公告)日：2002-06-18
申请号：US09820119
申请日：2001-03-28
申请人： Jih-Churng Twu , Ming-Dar Guo , Yu-Chien Hsiao , Chia-Chun Cheng
发明人： Jih-Churng Twu , Ming-Dar Guo , Yu-Chien Hsiao , Chia-Chun Cheng
IPC分类号： F26B2114
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A method for drying wafers after a wet bench process is disclosed. In the method, a wafer is first immersed in a volume of DI water held in a container. A mixture of alcohol vapor/inert gas is then flown into the upper portion of the container that is not filled with the volume of DI water at a flow rate of less than 20 l/min. The wafer is then withdrawn from the DI water into the upper portion of the container filled with the alcohol vapor/inert gas mixture and thereby driving DI water molecules off the surface of the wafer without leaving organic residue on the wafer surface.
摘要翻译：公开了在湿式工艺过程之后干燥晶片的方法。在该方法中，首先将晶片浸入保持在容器中的一定体积的DI水中。然后将醇蒸汽/惰性气体的混合物以小于20l / min的流速流入未充满体积的去离子水的容器的上部。然后将晶片从去离子水中排出到装有醇蒸气/惰性气体混合物的容器的上部，从而将DI水分子驱离晶片表面，而不会在晶片表面上留下有机残留物。

7. 发明申请

US20070090643A1 Pipe Fitting 审中-公开
标题翻译：管道配件
公开(公告)号：US20070090643A1
公开(公告)日：2007-04-26
申请号：US11466737
申请日：2006-08-23
申请人： Chia-Chun Cheng
发明人： Chia-Chun Cheng
IPC分类号： F16L27/00
CPC分类号： F16L27/093 , F16L33/03 , F28F3/12 , F28F9/0256
摘要： A pipe fitting includes a first pipework with a hollow interior, a casing pipe sheathed onto the first pipework, a stopping portion disposed at an end of the first pipework, a first junction disposed at another end of the first pipework and interconnected to the interior, at least one penetrating hole disposed on the first pipework and interconnected with the interior, and two first washers with an interval apart such that the penetrating hole is situated between the two first washers. The casing pipe has a circular sheath and a cold water junction disposed on an external wall of the circular sheath, and the circular sheath has a circular sheath hole sheathed onto the first pipework, such that the internal wall of the circular sheath is in a close contact with the two first washers and the cold water junction is interconnected with the interior of the first pipework.
摘要翻译：管配件包括具有中空内部的第一管道，套在第一管道上的套管，设置在第一管道末端的止挡部分，设置在第一管道的另一端并互连到内部的第一连接点，设置在第一管道上并与内部相互连接的至少一个穿孔，以及间隔开的两个第一垫圈，使得穿透孔位于两个第一垫圈之间。套管具有圆形护套和设置在圆形护套的外壁上的冷水接合点，圆形护套具有套在第一管道上的圆形护套孔，使得圆形护套的内壁处于闭合状态与两个第一洗涤器和冷水接头的接触与第一管道的内部相互连接。

8. 发明申请

US20060262505A1 Water-cooling heat dissipator 有权
标题翻译：水冷散热器
公开(公告)号：US20060262505A1
公开(公告)日：2006-11-23
申请号：US11399333
申请日：2006-04-07
申请人： Chia-Chun Cheng
发明人： Chia-Chun Cheng
IPC分类号： H05K7/20
CPC分类号： H01L23/427 , F28D15/0266 , F28D15/0275 , F28F2275/085 , G06F1/20 , G06F2200/201 , H01L2924/0002 , H01L2924/00
摘要： A water-cooling heat dissipator mounted on an electronic heat-generating element includes a water-cooling head member and at least one heat pipe. The water-cooling head member includes a first cover and a second cover connected to the first cover. Both ends of the first cover and the second cover are formed with a receiving portion corresponding to each other, respectively. The receiving portions are adapted to be connected to the conduit connectors. A channel portion is formed between the first cover and the second cover for receiving one end of the heat pipe. With the above arrangement, the present invention can perform the heat dissipations of different heat-generating elements simultaneously to make the heat-generating elements operate under acceptable working temperatures. Further, the present invention can be widely used in the heat dissipation of compact electronic products.
摘要翻译：安装在电子发热元件上的水冷散热器包括水冷头部件和至少一个热管。水冷头部件包括第一盖和连接到第一盖的第二盖。第一盖和第二盖的两端分别形成有彼此对应的接收部。接收部分适于连接到导管连接器。通道部分形成在第一盖和第二盖之间，用于接收热管的一端。通过上述结构，本发明可以同时进行不同的发热元件的散热，使得发热元件在可接受的工作温度下工作。此外，本发明可广泛用于紧凑型电子产品的散热。

9. 发明申请

US20080225486A1 HEAT-DISSIPATING DEVICE CONNECTED IN SERIES TO WATER-COOLING CIRCULATION SYSTEM 有权
标题翻译：连接到水冷循环系统的散热装置
公开(公告)号：US20080225486A1
公开(公告)日：2008-09-18
申请号：US11847667
申请日：2007-08-30
申请人： Chia-Chun Cheng
发明人： Chia-Chun Cheng
IPC分类号： H05K7/20
CPC分类号： H01L23/427 , G06F1/20 , G06F2200/201 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A heat-dissipating device includes a MOSFET heat dissipator, a south bridge heat dissipator, a north bridge heat dissipator and a water block connector. A heat pipe is provided between each heat dissipator to connect these heat dissipators in series. Further, the north bridge heat dissipator has a heat-dissipating bottom plate and a heat-dissipating body attached to a half portion of the heat-dissipating bottom plate. Further, the water block connector comprises a hollow base and two connecting tubes that are provided on two locations of the base and in communication with each other. The base of the water block connector is attached to the other half portion of the heat-dissipating bottom plate of the north bridge heat dissipater. When the water cooling is used, the two connecting tubes of the water block connector can be connected in series with a water-cooling circulation system.
摘要翻译：散热装置包括MOSFET散热器，南桥散热器，北桥散热器和水阻塞连接器。在每个散热器之间设置一个热管，以将这些散热器串联连接。此外，北桥散热器具有散热底板和安装在散热底板的一半部分上的散热体。此外，水封连接器包括中空基座和设置在基座的两个位置并彼此连通的两个连接管。水封连接器的底座连接到北桥散热器的散热底板的另一半部分。当使用水冷时，水封连接器的两个连接管可以与水冷循环系统串联连接。

10. 发明申请

US20080012294A1 Pipe Connector 审中-公开
标题翻译：管接头
公开(公告)号：US20080012294A1
公开(公告)日：2008-01-17
申请号：US11466733
申请日：2006-08-23
申请人： Chia-Chun Cheng
发明人： Chia-Chun Cheng
IPC分类号： F16L27/00
CPC分类号： F16L27/093
摘要： A pipe connector includes a pipe-connecting piece hollowed in its interior, a pipe-covering piece covered on the pipe-connecting piece, and a sealing piece detachably provided on the outside of one end of the pipe-covering piece. The pipe-connecting piece has a first connecting port for communicating with its interior. At least one through hole is provided on the pipe-connecting piece for communicating with its interior. Further, two leakage-proof washers are provided at an interval with the through hole disposed therebetween. The pipe-covering piece has an annular sheath and a second connecting port provided on the outer wall of the annular sheath. The annular sheath is covered on the pipe-connecting piece to allow its inner wall to tightly contact with the two leakage-proof washers, so that the second connecting port is in communication with the interior of the pipe-connecting piece.
摘要翻译：管连接器包括在其内部中空的管连接件，覆盖在管连接件上的管覆盖件和可拆卸地设置在管覆盖件的一端的外侧上的密封件。管连接件具有用于与其内部连通的第一连接口。至少一个通孔设置在管连接件上，用于与内部连通。此外，两个防漏垫圈间隔设置有通孔。管道覆盖件具有环形护套和设置在环形护套的外壁上的第二连接口。环形护套被覆盖在管连接件上，以允许其内壁与两个防漏垫圈紧密接触，使得第二连接口与管连接件的内部连通。

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