专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06812156B2 Method to reduce residual particulate contamination in CVD and PVD semiconductor wafer manufacturing 有权
公开(公告)号：US06812156B2
公开(公告)日：2004-11-02
申请号：US10188490
申请日：2002-07-02
申请人： Dyson Day , Mei-Yen Li , Ming-Te More , Hsing-Yuan Chu
发明人： Dyson Day , Mei-Yen Li , Ming-Te More , Hsing-Yuan Chu
IPC分类号： H01L21302
CPC分类号： H01L21/76838 , H01L21/02063 , H01L21/0228 , H01L21/02343 , H01L21/31612 , H01L21/31625 , H01L21/31629 , H01L21/31633 , H01L21/318 , H01L21/76807 , H01L21/76826
摘要： A method of reducing particulate contamination in a deposition process including providing a semiconductor wafer having a process surface for depositing a deposition layer thereover according to one of a physical vapor deposition (PVD) and a chemical vapor deposition (CVD) process; depositing at least a portion of the deposition layer over the process surface; cleaning the semiconductor wafer including the process surface according to an ex-situ cleaning process to remove particulate contamination including at least one of spraying and scrubbing; and, repeating the steps of depositing and cleaning at least once to include reducing a level of occluded particulates.

2. 发明授权

US06647998B2 Electrostatic charge-free solvent-type dryer for semiconductor wafers 有权
公开(公告)号：US06647998B2
公开(公告)日：2003-11-18
申请号：US09885772
申请日：2001-06-20
申请人： Jih-Churng Twu , Ming-Dar Guo , Tsung-Chieh Tsai , Sheng-Hsiung Tseng , Wei-Ming You , Yao-Pin Huang , Chia-Chun Cheng , Chin-Hsiung Ho , Ming Te More
发明人： Jih-Churng Twu , Ming-Dar Guo , Tsung-Chieh Tsai , Sheng-Hsiung Tseng , Wei-Ming You , Yao-Pin Huang , Chia-Chun Cheng , Chin-Hsiung Ho , Ming Te More
IPC分类号： B08B310
CPC分类号： H01L21/67034 , Y10S134/902
摘要： An electrostatic charge-free solvent-type dryer for drying semiconductor wafers after a wet bench process is disclosed in a preferred embodiment and in an alternate embodiment. In the preferred embodiment, the electrostatic charge-free solvent-type dryer is constructed by a tank body, a wafer carrier, an elevator means, a tank cover and a conduit for feeding the flow of solvent vapor. At least one of the tank cover, the conduit for feeding the flow of solvent vapor and the plurality of partition plates is fabricated of a non-electrostatic material such that electrostatic charge is not generated in the flow of solvent vapor. In the alternate embodiment, a deionizer is further provided in the tank cavity for producing a flux of positive ions to neutralize any negative ions that are possibly produced in the flow of solvent vapor.

3. 发明申请

US20060219172A1 PVD equipment and electrode and deposition ring thereof 审中-公开
标题翻译： PVD设备及其电极和沉积环
公开(公告)号：US20060219172A1
公开(公告)日：2006-10-05
申请号：US11098480
申请日：2005-04-05
申请人： Yu-Yuan Kuo , Shuo-Yen Tai , Chou-Ting Tsai , Ming-Te More , Kuo-Hsien Cheng , G. H. Tseng
发明人： Yu-Yuan Kuo , Shuo-Yen Tai , Chou-Ting Tsai , Ming-Te More , Kuo-Hsien Cheng , G. H. Tseng
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： C23C14/50
摘要： A deposition ring comprises a ring body, a groove and a protrusion structure. The ring body is planar-ring shaped, and comprises a first surface. The groove and the protrusion structure are ring shaped and formed on the first surface. The protrusion structure is close to the groove and near an outer side of the ring body. The groove comprises a first side wall, a second side wall and a bottom. A curvature radius of the first side wall is larger than a curvature radius of the second side wall. The second side wall is a continuous ring shaped wall. The bottom is formed between the first side wall and the second side wall.
摘要翻译：沉积环包括环体，凹槽和突起结构。环体是平面环形的，并且包括第一表面。槽和突起结构是环形的并形成在第一表面上。突起结构靠近槽并靠近环体的外侧。凹槽包括第一侧壁，第二侧壁和底部。第一侧壁的曲率半径大于第二侧壁的曲率半径。第二侧壁是连续的环形壁。底部形成在第一侧壁和第二侧壁之间。

4. 发明授权

US06688344B2 Container flush and gas charge system and method 失效
标题翻译：集装箱冲洗和充气系统及方法
公开(公告)号：US06688344B2
公开(公告)日：2004-02-10
申请号：US10159769
申请日：2002-05-30
申请人： Tain-Chen Hu , Ming Te More , Wei William Lee
发明人： Tain-Chen Hu , Ming Te More , Wei William Lee
IPC分类号： B65B104
CPC分类号： H01L21/67393
摘要： A system and method for evacuating potential wafer-corroding and contaminating residual process gases from the interior of a semiconductor wafer pod before, after or both before and after a process is performed on the wafers. The residual process gases are first evacuated from the wafer pod, which is next charged with a fresh supply of inert gas. The system is adapted to evacuate and charge the wafer pod as the wafer pod typically rests on a load port of a SMIF prior to transfer of the pod to another destination in the semiconductor fabrication facility, prior to internalization of the wafers into a processing tool, or both.
摘要翻译：在晶片上执行在半导体晶片盒的内部之前，之后或之后或之后对晶片腐蚀和污染残余工艺气体排出的系统和方法。首先将剩余的工艺气体从晶片盒中抽出，然后再装入新鲜的惰性气体。该系统适于对晶片盒进行抽空和充电，因为在将晶片内置到处理工具之前，晶片盒通常在将盒体转移到半导体制造设备中的另一个目的地之前搁置在SMIF的负载端口上，或两者。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式