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1. 发明授权

US07394073B2 Methods and apparatus for ion beam angle measurement in two dimensions 有权
标题翻译：二维离子束角度测量的方法和装置
公开(公告)号：US07394073B2
公开(公告)日：2008-07-01
申请号：US11336466
申请日：2006-01-20
申请人： James J. Cummings , Joseph Olson , Arthur H. Clough , Eric Hermanson , Rosario Mollica , Paul J. Murphy , Mark Donahue
发明人： James J. Cummings , Joseph Olson , Arthur H. Clough , Eric Hermanson , Rosario Mollica , Paul J. Murphy , Mark Donahue
IPC分类号： G01K1/08
CPC分类号： H01J37/244 , G01B15/00 , H01J37/304 , H01J37/3171 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/31701 , H01J2237/31703
摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.
摘要翻译：用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

2. 发明申请

US20060289798A1 Methods & apparatus for ion beam angle measurement in two dimensions 有权
标题翻译：二维离子束角度测量方法与装置
公开(公告)号：US20060289798A1
公开(公告)日：2006-12-28
申请号：US11336466
申请日：2006-01-20
申请人： James Cummings , Joseph Olson , Arthur Clough , Eric Hermanson , Rosario Mollica , Paul Murphy , Mark Donahue
发明人： James Cummings , Joseph Olson , Arthur Clough , Eric Hermanson , Rosario Mollica , Paul Murphy , Mark Donahue
IPC分类号： H01J37/08
CPC分类号： H01J37/244 , G01B15/00 , H01J37/304 , H01J37/3171 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/31701 , H01J2237/31703
摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.
摘要翻译：用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

3. 发明申请

US20060219936A1 Methods and apparatus for ion beam angle measurement in two dimensions 有权
标题翻译：二维离子束角度测量的方法和装置
公开(公告)号：US20060219936A1
公开(公告)日：2006-10-05
申请号：US11099119
申请日：2005-04-05
申请人： Joseph Olson , Eric Hermanson , Rosario Mollica , Paul Murphy
发明人： Joseph Olson , Eric Hermanson , Rosario Mollica , Paul Murphy
IPC分类号： G01K1/08 , H01J3/14
CPC分类号： H01J37/244 , G01B15/00 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/31701
摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.
摘要翻译：用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记拦截至少一部分离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并产生具有代表第一特征的第一信号分量和表示第二特征的第二信号分量的传感器信号。标志的第一和第二信号分量和对应的位置代表垂直于平移路径的方向上离子束的角度。感测装置可以是束电流传感器的二维阵列。该系统可以提供水平和垂直波束角度的测量，同时仅在一个方向上翻译标志。

4. 发明申请

US20070235663A1 Insulator system for a terminal structure of an ion implantation system 有权
标题翻译：用于离子注入系统的端子结构的绝缘体系统
公开(公告)号：US20070235663A1
公开(公告)日：2007-10-11
申请号：US11394824
申请日：2006-03-31
申请人： Russell Low , Piortr Lubicki , D. Lischer , Steve Krause , Eric Hermanson , Joseph Olson
发明人： Russell Low , Piortr Lubicki , D. Lischer , Steve Krause , Eric Hermanson , Joseph Olson
IPC分类号： G21G5/00
CPC分类号： H01J37/16 , H01J37/3171 , H01J2237/026 , H01J2237/038
摘要： An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
摘要翻译：离子注入系统包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘体系统。绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。还提供了一种用于对离子注入系统的气体箱进行电绝缘的气体箱绝缘体系统。

5. 发明申请

US20060192134A1 Ion beam measurement apparatus and method 有权
标题翻译：离子束测量装置及方法
公开(公告)号：US20060192134A1
公开(公告)日：2006-08-31
申请号：US11093930
申请日：2005-03-30
申请人： Anthony Renau , Eric Hermanson , Joseph Olson , Gordon Angel
发明人： Anthony Renau , Eric Hermanson , Joseph Olson , Gordon Angel
IPC分类号： G01K1/08
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/004 , H01J2237/24405 , H01J2237/31703 , H01J2237/31705
摘要： The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.
摘要翻译：本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。本发明的装置能够选择性地测量离子束的两个特性，包括例如减速离子束中的电流和能量污染水平。本发明的第一方面提供了一种离子束测量装置，其包括用于接收离子束的孔，邻近孔径设置的负偏置电极，邻近负偏置电极设置的正偏置电极，正偏置电极和集电极，其中选择性偏置电极可以选择性地被负偏置或正偏置。

6. 发明申请

US20050178981A1 Ion beam neutral detection 有权
标题翻译：离子束中性检测
公开(公告)号：US20050178981A1
公开(公告)日：2005-08-18
申请号：US11056445
申请日：2005-02-11
申请人： Anthony Renau , Joseph Olson , Eric Hermanson , Gordon Angel
发明人： Anthony Renau , Joseph Olson , Eric Hermanson , Gordon Angel
IPC分类号： G21K5/10 , H01J37/08 , H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/304
摘要： An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization
摘要翻译：公开了一种离子束中性检测器系统，包括检测器系统的离子注入机系统和检测离子束中性物质的方法，其确保离子注入满足污染要求。检测器包括一个位于离子注入机系统中的能量污染监测器。本发明的方法包括使用离子束植入工件，并且周期性地检测离子束中的离子束中性粒子，使得可以对离子注入机系统进行调整以进行优化

7. 发明授权

US08455760B2 Interfacing two insulation parts in high voltage environment 有权
标题翻译：在高压环境下接合两个绝缘部件
公开(公告)号：US08455760B2
公开(公告)日：2013-06-04
申请号：US12983706
申请日：2011-01-03
申请人： Russell J. Low , Kasegn Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R4/02
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
摘要翻译：公开了在高电压环境中部分接口的相关结构的方法。一种方法包括：提供第一部分和第二部分; 以及接合所述第一部分和所述第二部分以在所述第一部分和所述第二部分之间的界面的第一外部范围处形成第一基本为零的电场区域，以及在所述界面的不同部分中的减小的电场区域。

8. 发明授权

US08143604B2 Insulator system for a terminal structure of an ion implantation system 有权
标题翻译：用于离子注入系统的端子结构的绝缘体系统
公开(公告)号：US08143604B2
公开(公告)日：2012-03-27
申请号：US11394824
申请日：2006-03-31
申请人： Russell Low , Piortr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Joseph C. Olson
发明人： Russell Low , Piortr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Joseph C. Olson
IPC分类号： G21G5/00 , H01J37/08
CPC分类号： H01J37/16 , H01J37/3171 , H01J2237/026 , H01J2237/038
摘要： An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
摘要翻译：离子注入系统包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘体系统。绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。还提供了一种用于对离子注入系统的气体箱进行电绝缘的气体箱绝缘体系统。

9. 发明授权

US07863531B2 Techniques for making high voltage connections 失效
标题翻译：高压连接技术
公开(公告)号：US07863531B2
公开(公告)日：2011-01-04
申请号：US11861796
申请日：2007-09-26
申请人： Douglas E. May , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
发明人： Douglas E. May , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
IPC分类号： H01H9/00
CPC分类号： H01H1/06 , H01H1/385 , H01H3/36 , H01H31/003 , H01H31/026 , H01H35/38
摘要： Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
摘要翻译：公开了用于制造高压连接的技术。在一个特定的示例性实施例中，这些技术可以被实现为电开关。电开关可以包括从第一电触头延伸到第二电触点的部件。该部件还可以包括非导电部分和导电部分。在第一操作模式中，非导电部分的至少一部分可以位于两个电触点之间，以使两个电触头绝缘。在第二操作模式中，导电部分可以位于两个电触头之间，以连接两个电触点。

10. 发明授权

US07576337B2 Power supply for an ion implantation system 有权
标题翻译：离子注入系统的电源
公开(公告)号：US07576337B2
公开(公告)日：2009-08-18
申请号：US11620595
申请日：2007-01-05
申请人： Piotr Lubicki , Russell Low , Steve Krause , Eric Hermanson
发明人： Piotr Lubicki , Russell Low , Steve Krause , Eric Hermanson
IPC分类号： H01J37/08
CPC分类号： H02M7/103
摘要： A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.
摘要翻译：一种用于离子注入系统的电源系统。在一个具体示例性实施例中，系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。高电压发生单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部元件的分解强度的变化。

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