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    • 3. 发明申请
    • METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTING DEVICE
    • 制造光电转换器件的方法
    • US20090305450A1
    • 2009-12-10
    • US12161890
    • 2007-02-28
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • H01L21/50
    • H01J40/02
    • The present invention relates to a manufacturing method of obtaining a photoelectric converting device which can sufficiently maintain airtightness of a housing space for photocathode without degradation of the characteristics of the photocathode. In accordance with the manufacturing method, on the side wall end face of a lower frame and a bonding portion of an upper frame forming an envelope of the photoelectric converting device, a multilayered metal film of chromium and nickel is formed. In a vacuum space decompressed to a predetermined degree of vacuum and having a temperature not more than the melting point of indium, these upper and lower frames introduced therein are brought into close contact with each other with a predetermined pressure while sandwiching indium wire members, and accordingly, an envelope having a housing space whose airtightness is sufficiently maintained is obtained.
    • 本发明涉及一种获得光电转换装置的制造方法,该光电转换装置能够充分保持用于光电阴极的容纳空间的气密性,而不会降低光电阴极的特性。 根据制造方法,在下框架的侧壁端面和形成光电转换装置的外壳的上框架的接合部分形成铬和镍的多层金属膜。 在减压至预定真空度并且具有不高于铟的熔点的温度的真空空间中,引入其中的这些上下框架以预定压力彼此紧密接触,同时夹入铟线构件,并且 因此,获得具有充分保持气密性的收纳空间的信封。
    • 4. 发明授权
    • Method for manufacturing photoelectric converting device
    • 光电转换装置的制造方法
    • US07867807B2
    • 2011-01-11
    • US12161890
    • 2007-02-28
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • H01L21/00
    • H01J40/02
    • The present invention relates to a manufacturing method of obtaining a photoelectric converting device which can sufficiently maintain airtightness of a housing space for photocathode without degradation of the characteristics of the photocathode. In accordance with the manufacturing method, on the side wall end face of a lower frame and a bonding portion of an upper frame forming an envelope of the photoelectric converting device, a multilayered metal film of chromium and nickel is formed. In a vacuum space decompressed to a predetermined degree of vacuum and having a temperature not more than the melting point of indium, these upper and lower frames introduced therein are brought into close contact with each other with a predetermined pressure while sandwiching indium wire members, and accordingly, an envelope having a housing space whose airtightness is sufficiently maintained is obtained.
    • 本发明涉及一种获得光电转换装置的制造方法,该光电转换装置能够充分保持用于光电阴极的容纳空间的气密性,而不会降低光电阴极的特性。 根据制造方法,在下框架的侧壁端面和形成光电转换装置的外壳的上框架的接合部分形成铬和镍的多层金属膜。 在减压至预定真空度并且具有不高于铟的熔点的温度的真空空间中,引入其中的这些上下框架以预定压力彼此紧密接触,同时夹入铟线构件,并且 因此,获得具有充分保持气密性的收纳空间的信封。
    • 6. 发明申请
    • PHOTOMULTIPLIER TUBE
    • 光电管
    • US20100213838A1
    • 2010-08-26
    • US12710714
    • 2010-02-23
    • Hiroyuki SUGIYAMAHideki ShimoiTsuyoshi KodamaHitoshi KishitaYasuyuki KohnoKeisuke Inoue
    • Hiroyuki SUGIYAMAHideki ShimoiTsuyoshi KodamaHitoshi KishitaYasuyuki KohnoKeisuke Inoue
    • H01J43/18
    • H01J43/243
    • Electrons are prevented from being made incident onto an insulation part between dynodes to improve a withstand voltage. The photomultiplier tube 1 is provided with a casing having a glass substrate 40 on which a main surface 40a made with an insulating material is formed, dynodes 31 constituted with a 1st stage to an Nth stage (N denotes an integer of 2 or more) which are arrayed so as to be spaced away sequentially from a first end side to a second end side on the main surface 40a, a photocathode 22 which is installed on the first end side so as to be spaced away from the 1st stage dynode 31a to emit photoelectrons, and an anode part 32 which is installed on the second end side so as to be spaced away from the Nth stage dynode 31j, taking out multiplied electrons as a signal, in which a groove 44, the surface of which is made with an insulating material, is formed between two adjacent dynodes 31 on the main surface 40a of the glass substrate 40, and the 1st stage to the Nth stage dynodes 31 are fixed on raised parts 45 adjacent to the grooves 44 on the glass substrate 40.
    • 防止电子入射到倍增极之间的绝缘部分上以提高耐受电压。 光电倍增管1设置有具有玻璃基板40的壳体,在其上形成有由绝缘材料制成的主表面40a,由第一级至第N级构成的倍增电极31(N表示2以上的整数), 排列成从主表面40a上的第一端侧到第二端侧依次间隔开,光电阴极22安装在第一端侧,以便与第一级倍增极31a间隔开以发射 光电子和阳极部件32,其安装在第二端侧以与第N级倍增电极31j隔开,取出乘以的电子作为信号,其中凹槽44的表面由 绝缘材料形成在玻璃基板40的主表面40a上的两个相邻的倍增极31之间,第一级至第N级倍增电极31固定在与玻璃基板40上的凹槽44相邻的凸起部分45上。
    • 9. 发明授权
    • Photomultiplier
    • 光电倍增管
    • US07602122B2
    • 2009-10-13
    • US10586498
    • 2005-02-16
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • H01J43/04
    • H01J43/08H01J9/26H01J43/04H01J43/24
    • The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.
    • 本发明涉及实现高乘法器效率的精细结构的光电倍增管。 光电倍增管包括内壳保持真空的外壳,在外壳中,响应于入射光发射光电子的光电阴极,执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极 用于取出在电子倍增器部分产生的二次电子。 具体而言,在电子倍增部中设置用于进行电子从光电阴极的级联倍增的槽部,在形成有槽部的各对壁部的各表面设置有一个以上的具有二次电子 在其表面上形成的发光表面。
    • 10. 发明申请
    • Photomultiplier
    • 光电倍增管
    • US20080018246A1
    • 2008-01-24
    • US10586498
    • 2005-02-16
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • Hiroyuki KyushimaHideki ShimoiAkihiro KageyamaKeisuke InoueMasuo Ito
    • H01J43/04
    • H01J43/08H01J9/26H01J43/04H01J43/24
    • The present invention relates to a photomultiplier of a fine structure that realizes a high multiplier efficiency. The photomultiplier comprises an outer casing whose interior is maintained at vacuum, and, in the outer case, a photocathode that emits photoelectrons in response to incident light, an electron multiplier section that performs cascade multiplication of the photoelectrons emitted from the photocathode, and an anode for taking out secondary electrons, which are generated at the electron multiplier section, are arranged. In particular, groove portions for performing cascade multiplication of electrons from the photocathode are provided in the electron multiplier section, and on the respective surfaces of each pair of wall portions that define the groove portions are provided with one or more protrusions each having a secondary electron emitting surface formed on the surface thereof.
    • 本发明涉及实现高乘法器效率的精细结构的光电倍增管。 光电倍增管包括内壳保持真空的外壳,在外壳中,响应于入射光发射光电子的光电阴极,执行从光电阴极发射的光电子的级联倍增的电子倍增器部分和阳极 用于取出在电子倍增器部分产生的二次电子。 具体而言,在电子倍增部中设置用于进行电子从光电阴极的级联倍增的槽部,在形成有槽部的各对壁部的各表面设置有一个以上的具有二次电子 在其表面上形成的发光表面。