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    • 1. 发明授权
    • Semiconductor power converting apparatus
    • 半导体电力转换装置
    • US06380796B2
    • 2002-04-30
    • US09838470
    • 2001-04-20
    • Hiromitsu SakaiHidetoshi AizawaShuji KatohRyuji IyotaniMasahiro Nagasu
    • Hiromitsu SakaiHidetoshi AizawaShuji KatohRyuji IyotaniMasahiro Nagasu
    • H03K17687
    • H02M1/08H03K4/00H03K17/166H03K17/168
    • A semiconductor power converting apparatus includes a semiconductor element for controlling a current flowing between a collector and an emitter in response to a gate condition, a driving device connected to the gate, for driving the gate in response to a drive signal entered thereinto, a voltage applying device for applying both a forward bias and a reverse bias to the gate so as to set the emitter of the semiconductor element to a neutral potential, and a voltage dividing device for dividing a voltage appearing between the collector and the emitter of the semiconductor element, in which the drive signal is under OFF state, a voltage produced based upon the divided voltage by the voltage dividing device is applied to the gate, and the gate voltage is controlled in response to the voltage appearing between the collector and the emitter of the semiconductor element, thereby reducing the snubbed loss.
    • 半导体功率转换装置包括:半导体元件,用于响应于栅极条件控制在集电极和发射极之间流动的电流;连接到栅极的驱动装置,用于响应输入的驱动信号驱动栅极;电压 施加装置,用于向栅极施加正向偏压和反向偏压,以将半导体元件的发射极设置为中性电位;以及分压装置,用于分割半导体元件的集电极和发射极之间的电压 ,其中驱动信号处于OFF状态,将通过分压装置分压的电压产生的电压施加到栅极,并且响应于集电极和发射极之间出现的电压来控制栅极电压 半导体元件,从而减少缓冲损耗。
    • 2. 发明授权
    • Semiconductor power converting apparatus
    • 半导体电力转换装置
    • US06242968B1
    • 2001-06-05
    • US09642816
    • 2000-08-22
    • Hiromitsu SakaiHidetoshi AizawaShuji KatohRyuji IyotaniMasahiro Nagasu
    • Hiromitsu SakaiHidetoshi AizawaShuji KatohRyuji IyotaniMasahiro Nagasu
    • H03K17687
    • H02M1/08H03K4/00H03K17/166H03K17/168
    • A semiconductor power converting apparatus includes a semiconductor element for controlling a current flowing between a collector and an emitter in response to a gate condition, a driving device connected to the gate, for driving the gate in response to a drive signal entered thereinto, a voltage applying device for applying both a forward bias and a reverse bias to the gate so as to set the emitter of the semiconductor element to a neutral potential, and a voltage dividing device for dividing a voltage appearing between the collector and the emitter of the semiconductor element, in which the drive signal is under OFF state, a voltage produced based upon the divided voltage by the voltage dividing device is applied to the gate, and the gate voltage is controlled in response to the voltage appearing between the collector and the emitter of the semiconductor element, thereby reducing the snubbed loss.
    • 半导体功率转换装置包括:半导体元件,用于响应于栅极条件控制在集电极和发射极之间流动的电流;连接到栅极的驱动装置,用于响应输入的驱动信号驱动栅极;电压 施加装置,用于向栅极施加正向偏压和反向偏压,以将半导体元件的发射极设置为中性电位;以及分压装置,用于分割半导体元件的集电极和发射极之间的电压 ,其中驱动信号处于OFF状态,将通过分压装置分压的电压产生的电压施加到栅极,并且响应于集电极和发射极之间出现的电压来控制栅极电压 半导体元件,从而减少缓冲损耗。
    • 4. 发明授权
    • Gate driver for MOS control semiconductor devices
    • 用于MOS控制半导体器件的栅极驱动器
    • US06703874B2
    • 2004-03-09
    • US10436265
    • 2003-05-13
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • H03K300
    • H02M1/32H03K17/0828H03K17/107
    • A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.
    • 提供一种栅极驱动器,用于控制半导体功率转换器中的多个MOS控制半导体器件(例如IGBT或金属氧化物MOS晶体管)中的每一个的栅极电压,其中所述MOS控制半导体彼此串联连接, 栅极驱动器包括在稳定导通状态时具有比每个所述MOS控制半导体器件上的栅极电位高的电位的电源线,以及用于将电流从电源线提供给每个所述MOS控制的栅极的装置 半导体,当所述电源线和所述MOS控制半导体的每一个的发射极之间的电位差恒定时,以及当所述MOS控制半导体器件的集电极电压在ON时超过预定值时,增加所述MOS控制半导体器件的栅极电压 MOS控制半导体器件的状态。
    • 5. 发明授权
    • Semiconductor power converting apparatus
    • 半导体电力转换装置
    • US06809561B2
    • 2004-10-26
    • US10638400
    • 2003-08-12
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • Shuji KatohShigeta UedaHiromitsu SakaiTakashi IkimiTomomichi Ito
    • H03K300
    • H02M1/32H03K17/0828H03K17/107
    • A semiconductor power converting apparatus including at least one series arrangement of MOS control semiconductor devices such as Insulator-gate Bipolar Transistors (IGBTs) or metal oxide MOS transistors which are respectively applied with a gate voltage under the control of corresponding a driver. The driver contains a supply line having a higher potential than a gate voltage of an IGBT coupled thereto when the IGBT is in a steady ON state, and is such that is causes an increase of the gate voltage of the IGBT in accordance with the current of the supply line when a potential difference between the power supply line and an emitter of the IGBT is constant and the collector voltage thereof exceeds a predetermined value under an ON state of the IGBT.
    • 一种半导体功率转换装置,包括在相应的驱动器的控制下分别施加栅极电压的MOS控制半导体器件如绝缘体 - 栅双极晶体管(IGBT)或金属氧化物MOS晶体管的至少一个串联布置。 当IGBT处于稳定导通状态时,驱动器具有比与其耦合的IGBT的栅极电压更高的电位的电源线,并且使得根据电流的电流使IGBT的栅极电压增加 在IGBT的导通状态下,当电源线和IGBT的发射极之间的电位差恒定并且集电极电压超过预定值时,电源线。
    • 10. 发明授权
    • Power converting device and method for controlling the same
    • 电力转换装置及其控制方法
    • US07643317B2
    • 2010-01-05
    • US11964274
    • 2007-12-26
    • Shuji KatohYasuhiro KiyofujiShoichiro KosekiTomomichi ItoMotoo Futami
    • Shuji KatohYasuhiro KiyofujiShoichiro KosekiTomomichi ItoMotoo Futami
    • H02M1/15H02M3/155
    • H02J3/01Y02E40/40
    • In a system to which a fluctuating load is connected, compensating for fluctuation in voltage harmonics at the load connecting point and fluctuation in system current harmonics has been difficult for a power converting device connected in parallel with the load. To resolve the problem, a power converting device connected in parallel with a fluctuating load includes: a Fourier series expansion unit which executes Fourier series expansion to load current by use of a reference sine wave in sync with a system and thereby outputs Fourier coefficients; and a fundamental component calculating unit which calculates a positive phase active fundamental component of the load current from the Fourier coefficients. A current instruction of the power converting device is generated by subtracting the fundamental current from the load current. With the current instruction, the fluctuations in system current harmonics and in voltage harmonics at the connecting point can be compensated for.
    • 在连接波动负载的系统中,与负载并联连接的电力转换装置难以补偿负载连接点的电压谐波的波动和系统电流谐波的波动。 为了解决该问题,与波动负载并联连接的电力转换装置包括:傅立叶级数扩展单元,其通过使用与系统同步的参考正弦波来执行傅里叶级数展开以加载电流,从而输出傅立叶系数; 以及从傅立叶系数计算负载电流的正相位有源基波分量的基波分量计算单元。 通过从负载电流中减去基波电流来产生电力转换装置的电流指令。 利用当前的指令,可以补偿系统电流谐波和连接点电压谐波的波动。