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1. 发明授权

US06262523B1 Large area atmospheric-pressure plasma jet 有权
标题翻译：大面积大气压等离子体射流
公开(公告)号：US06262523B1
公开(公告)日：2001-07-17
申请号：US09295942
申请日：1999-04-21
申请人： Gary S. Selwyn , Ivars Henins , Steve E. Babayan , Robert F. Hicks
发明人： Gary S. Selwyn , Ivars Henins , Steve E. Babayan , Robert F. Hicks
IPC分类号： H01J724
CPC分类号： H01J37/32009 , H01J37/32082 , H05H1/46 , H05H2001/466 , H05H2245/121
摘要： Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250° C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A “jet” of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.
摘要翻译：大面积大气压等离子体射流。描述了可以在大气压和接近室温下使用13.56MHz rf功率工作的等离子体放电。与等离子体炬不同，放电产生的气相流出物不高于250℃，施加的功率为约300W，并且显示出明显的非热特性。在最简单的设计中，使用两个平面的平行电极来产生它们之间的体积中的等离子体。产生能够快速清洗或蚀刻金属和其他材料的长寿命亚稳态和反应性物质的“射流”，其延伸超过电极开口端的8英寸。这些物质也可以除去膜和涂层。通过使用含有He的气体混合物，通过使用高流速限制电离，并通过适当地间隔rf供电的电极，在装置中防止了电弧。由于大气压力操作，与低压等离子体源和常规等离子体处理方法的情况不同，存在离子的密度可忽略不计，超过有效等离子体放电足够长的距离以轰击工件。

2. 发明授权

US07025856B2 Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge 有权
公开(公告)号：US07025856B2
公开(公告)日：2006-04-11
申请号：US09776086
申请日：2001-02-02
申请人： Gary S. Selwyn , Ivars Henins , Jaeyoung Park , Hans W. Herrmann
发明人： Gary S. Selwyn , Ivars Henins , Jaeyoung Park , Hans W. Herrmann
IPC分类号： C23F1/00 , H01L21/306 , C23C16/509
CPC分类号： H01L21/67069 , B08B7/0035 , C23G5/00 , H01J37/32082 , H01J37/32733 , H01L21/31
摘要： Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

3. 发明授权

US06546938B2 Combined plasma/liquid cleaning of substrates 有权
公开(公告)号：US06546938B2
公开(公告)日：2003-04-15
申请号：US09803065
申请日：2001-03-08
申请人： Gary S. Selwyn , Ivars Henins
发明人： Gary S. Selwyn , Ivars Henins
IPC分类号： B08B706
CPC分类号： H01L21/67051 , B08B3/02 , B08B7/0035 , Y10S134/902
摘要： Apparatus and method for cleaning substrates. A substrate is held and rotated by a chuck and an atmospheric pressure plasma jet places a plasma onto predetermined areas of the substrate. Subsequently liquid rinse is sprayed onto the predetermined areas. In one embodiment, a nozzle sprays a gas onto the predetermined areas to assist in drying the predetermined areas when needed.

4. 发明授权

US06909237B1 Production of stable, non-thermal atmospheric pressure rf capacitive plasmas using gases other than helium or neon 有权
标题翻译：使用氦气或氖气以外的气体生产稳定的非热大气压rf电容等离子体
公开(公告)号：US06909237B1
公开(公告)日：2005-06-21
申请号：US10205786
申请日：2002-07-25
申请人： Jaeyoung Park , Ivars Henins
发明人： Jaeyoung Park , Ivars Henins
IPC分类号： H05H1/24 , H01J7/24
CPC分类号： H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： The present invention enables the production of stable, steady state, non-thermal atmospheric pressure rf capacitive α-mode plasmas using gases other than helium and neon. In particular, the current invention generates and maintains stable, steady-state, non-thermal atmospheric pressure rf α-mode plasmas using pure argon or argon with reactive gas mixtures, pure oxygen or air. By replacing rare and expensive helium with more readily available gases, this invention makes it more economical to use atmospheric pressure rf α-mode plasmas for various materials processing applications.
摘要翻译：本发明能够使用除氦和氖之外的气体来生产稳定，稳态，非热大气压rf电容式α模式等离子体。特别地，本发明使用具有反应气体混合物，纯氧气或空气的纯氩或氩产生并维持稳定的，稳态的，非热的大气压rfα模式等离子体。通过用更容易获得的气体代替稀有和昂贵的氦气，本发明使得使用大气压rfα模式等离子体用于各种材料处理应用是更经济的。

5. 发明申请

US20060096707A1 Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge 审中-公开
标题翻译：大气压射频非热等离子体放电中的加工材料
公开(公告)号：US20060096707A1
公开(公告)日：2006-05-11
申请号：US11304257
申请日：2005-12-14
申请人： Gary Selwyn , Ivars Henins , Jaeyoung Park , Hans Herrmann
发明人： Gary Selwyn , Ivars Henins , Jaeyoung Park , Hans Herrmann
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , B08B7/0035 , C23G5/00 , H01J37/32082 , H01J37/32733 , H01L21/31
摘要： Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
摘要翻译：用于处理材料的装置，包括放置放置在射频电极和接地电极之间的材料，或者其本身是电极之一。这是在大气压力条件下完成的。该设备有效地蚀刻或清洁诸如硅晶片的基底，或提供线轴和滚筒的清洁，并且使用含有惰性气体和化学反应性气体的气体。

6. 发明申请

US20060048893A1 Atmospheric pressure plasma processing reactor 审中-公开
标题翻译：大气压等离子体处理反应器
公开(公告)号：US20060048893A1
公开(公告)日：2006-03-09
申请号：US11127865
申请日：2005-05-11
申请人： Gary Selwyn , Ivars Henins , Hans Snyder , Hans Herrmann
发明人： Gary Selwyn , Ivars Henins , Hans Snyder , Hans Herrmann
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32009 , G03F7/427 , H01J37/32082 , H01J37/32825 , H01J2237/3342 , H01L21/31138 , H01L21/67069 , H05H2001/466
摘要： A non-arcing atmospheric pressure plasma processing reactor that includes a wafer platform that is electrically conductive and operatively placed near at least one radio frequency electrode to allow the creation of an electric field. An rf power supply is electrically attached to both the radio frequency electrode and the wafer platform to create said electric field for generation of said non-arcing atmospheric pressure plasma. A process gas supply comprising a mixture of 90% to 99% support gas to 1 % to 10% reactive gas is supplied to the electric field to generate the atmospheric pressure plasma.
摘要翻译：一种非电弧大气压等离子体处理反应器，其包括导电并且可操作地放置在至少一个射频电极附近以允许产生电场的晶片平台。射频电源电连接到射频电极和晶片平台，以产生用于产生所述非电弧大气压等离子体的所述电场。将包含90％至99％的支持气体与1％至10％的反应气体的混合物的工艺气体供给到电场以产生大气压等离子体。

7. 发明申请

US20050199340A1 processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge 有权
标题翻译：处理材料在大气压射频非热等离子体放电中
公开(公告)号：US20050199340A1
公开(公告)日：2005-09-15
申请号：US09776086
申请日：2001-02-02
申请人： Gary Selwyn , Ivars Henins , Jaeyoung Park , Hans Herrmann
发明人： Gary Selwyn , Ivars Henins , Jaeyoung Park , Hans Herrmann
IPC分类号： H05H1/24 , B08B7/00 , C23G5/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/3065 , H01L21/31 , C23F1/02
CPC分类号： H01L21/67069 , B08B7/0035 , C23G5/00 , H01J37/32082 , H01J37/32733 , H01L21/31
摘要： Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
摘要翻译：用于处理材料的装置，包括放置放置在射频电极和接地电极之间的材料，或者其本身是电极之一。这是在大气压力条件下完成的。该设备有效地蚀刻或清洁诸如硅晶片的基底，或提供线轴和滚筒的清洁，并且使用含有惰性气体和化学反应性气体的气体。

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