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    • 1. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2005026612A
    • 2005-01-27
    • JP2003270451
    • 2003-07-02
    • Denso Corp株式会社デンソー
    • KAYUKAWA KIMIJIKONDO ICHIJIKATO NAOTOMIURA SHOJIWATANABE TAKENAO
    • H01L21/28H01L21/52
    • PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a sufficient junction life is assured in the process of soldering a semiconductor substrate to a header or the like by using an Sn-based Pb-free solder.
      SOLUTION: Counter-sputtering is performed on the formation surface S of a semiconductor substrate 1 for removing a natural oxide film from the formation surface S. A Ti film 2 of 200-300 nm thick is formed by sputtering on the formation surface S of the semiconductor substrate 1, and then an Ni layer 3 of 500-600 nm thick is formed by sputtering on the Ti film 2, and a protective film of Au or the like of 30-50 nm thick is formed by sputtering on the Ni layer 3. A heat treatment is performed in an Ni-filled quartz pipe type heat treatment furnace for forming a Ti-Ni layer 4 to serve as a solder barrier layer along the interface between the Ti film 2 and Ni layer 3.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种半导体器件,其中在通过使用Sn基无铅焊料将半导体衬底焊接到集管或其类似物的过程中确保足够的连接寿命。 解决方案:在从形成表面S去除自然氧化膜的半导体衬底1的形成表面S上进行反溅射。通过在形成表面上溅射形成200-300nm厚的Ti膜2 S,然后通过在Ti膜2上溅射形成500-600nm厚的Ni层3,通过溅射形成30nm至30nm的Au等的保护膜 Ni层3.在用于形成Ti-Ni层4的Ni填充的石英管式热处理炉中进行热处理,以沿着Ti膜2和Ni层3之间的界面作为阻焊层。

      版权所有(C)2005,JPO&NCIPI

    • 2. 发明专利
    • Electrode structure using bump
    • 电极结构使用BUMP
    • JP2005085857A
    • 2005-03-31
    • JP2003313819
    • 2003-09-05
    • Denso Corp株式会社デンソー
    • YONEYAMA TAKAOITO MOTOKIWATANABE TAKENAO
    • H01L21/60
    • H01L2224/11
    • PROBLEM TO BE SOLVED: To improve the strength of a root portion of a bump in an electrode structure using a bump, wherein a mating member is connected through soldering by means of a bump formed on a substrate. SOLUTION: The electrode structure using a bump is provided with a substrate 10, a base wiring 20 provided on one plane of the substrate 10, an underbump metal 40 provided on the base wiring 20, a metallic bump 50 that is provided on the underbump metal 40 and projects over one plane of the substrate 10, and a solder 60 provided on the bump 50. It is connected with a mating member by means of the solder 60. The solder 60 contains an Sn of 60 wt% or higher, and the solder 60 is not in contact with the base wiring 20 and the underbump metal 40. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了提高使用凸块的电极结构中的突起的根部的强度,其中通过焊接形成的凸块连接配合构件,所述突起形成在基板上。 解决方案:使用凸块的电极结构设置有基板10,设置在基板10的一个平面上的基布线20,设置在基布线20上的下凸块金属40,设置在基布10上的金属凸块50 底部金属40并且突出在基板10的一个平面上,以及设置在凸块50上的焊料60.它通过焊料60与配合构件连接。焊料60含有60重量%以上的Sn ,并且焊料60不与基底布线20和底部金属40接触。版权所有(C)2005,JPO&NCIPI