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1. 发明专利

JP2005345305A Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：JP2005345305A
公开(公告)日：2005-12-15
申请号：JP2004166114
申请日：2004-06-03
申请人： Denso Corp , 株式会社デンソー
发明人： TANAKA HIROAKI , TOYODA INEO , KONDO ICHIJI , TOTANI MAKOTO
IPC分类号： G01L19/06
摘要： PROBLEM TO BE SOLVED: To provide a pressure sensor of a new constitution superior in resistance to corrosion.
SOLUTION: A pressure sensor chip 20 is fixed to a chip housing chamber R1 of a case member 1 in such a way that a surface of the pressure sensor chip 20 in which a pad (26a) is formed may be exposed from an opening part 4. A sheet 41 made of a resin of a flexible printed wiring board 40 is crimped to the case member 1 and the surface of the pressure sensor chip 20 in which the pad (26a) is formed to block the opening part 4 of the chip housing chamber R1 of the case member 1. A wire (42a) of the flexible printed wiring board 40 is joined to the pad (26a) of the pressure sensor chip 20. Their joined parts are sealed with the sheet 41 made of a resin of the flexible printed wiring board 40.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种耐腐蚀性优异的新型式的压力传感器。解决方案：将压力传感器芯片20固定到壳体构件1的芯片容纳室R1上，使得形成有垫（26a）的压力传感器芯片20的表面可以从开口部分4.由柔性印刷线路板40的树脂制成的片材41被卷曲到壳体构件1和形成有垫（26a）的压力传感器芯片20的表面以阻挡开口部分4的开口部分4 壳体构件1的芯片容纳室R1。柔性印刷布线板40的导线（42a）接合到压力传感器芯片20的焊盘（26a）。它们的接合部分用由柔性印刷电路板40的树脂。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005265555A Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：JP2005265555A
公开(公告)日：2005-09-29
申请号：JP2004077131
申请日：2004-03-17
申请人： Denso Corp , 株式会社デンソー
发明人： TOYODA INEO , TANAKA HIROAKI , KONDO ICHIJI , TOTANI MAKOTO
IPC分类号： G01L9/00 , B60C23/04 , G01L17/00 , G08C17/02 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a miniaturizable pressure sensor having excellent corrosion resistance. SOLUTION: This pressure sensor has a constitution wherein a pressure sensor chip 21 and a circuit chip 30 are loaded on a base plate 10, and a conductive pattern 42a serving as wiring and a conductive pattern 43 serving as an antenna are sealed by a thermoplastic resin sheet 41 on a wiring antenna board 40. The thermoplastic resin sheet 41 on a wiring antenna board 40 is thermo-compression bonded to the pressure sensor chip 21 and the circuit chip 30, and the conductive pattern 42a serving as the wiring is bonded to a pad 25a of the pressure sensor chip 21, and the conductive pattern 42a is bonded to a pad 31a of the circuit chip 30, and the conductive pattern 43 serving as the antenna is bonded to a pad 32a of the circuit chip 30, respectively, and each bonded part is sealed by the thermoplastic resin sheet 41. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异耐腐蚀性的小型化压力传感器。解决方案：该压力传感器具有将压力传感器芯片21和电路芯片30装载在基板10上的结构，并且用作布线的导电图案42a和用作天线的导电图案43被密封布线天线板40上的热塑性树脂片41.布线天线板40上的热塑性树脂片41被热压接合到压力传感器芯片21和电路芯片30，并且用作布线的导体图案42a 接合到压力传感器芯片21的焊盘25a，并且导电图案42a接合到电路芯片30的焊盘31a，并且用作天线的导电图案43被接合到电路芯片30的焊盘32a，并且每个接合部分被热塑性树脂片41密封。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005039029A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005039029A
公开(公告)日：2005-02-10
申请号：JP2003273932
申请日：2003-07-14
申请人： Denso Corp , 株式会社デンソー
发明人： MAYAMA KEIJI , MIURA SHOJI , KONDO ICHIJI
IPC分类号： H01L21/60
CPC分类号： H01L2224/05557 , H01L2224/13022 , H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent a conatct between a soldering member and a protective film in a semiconductor device having a metal electrode for soldering to an Al (aluminum) electrode formed on one side of a semiconductor substrate. SOLUTION: After the Al electrode 11 is formed on the one side of the semiconductor substrate 1, the protective film 12 is formd on the Al electrode 11, and an opening part 12a is formed in the protective film 12, the metal electrode 13 for soldering is formed on the surface of the Al electrode 11 seen through the opening part 12a, and the soldering member 60 is bonded to the metal electrode 13. An inner circumference end face 12b of the opening part 12a of the protective film 12 is shaped in taper having a taper angle θ3 smaller than a supplementary angle θ2 of a solder contacting angle θ1 of a shape of the solder member 60 after reflow, the metal electrode 13 is thnner than the protective film 12, and an upper surface of the metal electrode 13 is in the opening part 12a. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止在具有用于焊接的金属电极的半导体器件中的焊接部件和保护膜之间的相互作用，形成在半导体基板的一侧上的Al（铝）电极。解决方案：在Al电极11形成在半导体衬底1的一侧之后，在Al电极11上形成保护膜12，并且在保护膜12中形成开口部12a，金属电极在通过开口部12a看到的Al电极11的表面上形成有用于焊接的电极13，焊接部件60接合到金属电极13.保护膜12的开口部12a的内周端面12b为形成为具有小于回流焊后的焊料60的形状的焊料接触角θ1的补角θ3的锥角θ3的锥形，金属电极13比保护膜12高，金属的上表面电极13位于开口部12a中。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004071872A Electronic device 审中-公开
公开(公告)号：JP2004071872A
公开(公告)日：2004-03-04
申请号：JP2002229994
申请日：2002-08-07
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO ICHIJI , TOMISAKA MANABU , NIIMI AKIHIRO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/12
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To appropriately prevent under cut of a seed layer in a CSP (chip size package) as an electronic device having a rewiring formed by electric plating via the seed layer on a substrate. SOLUTION: The device has a substrate, a rewiring 30 formed on the substrate by electric plating and a conductive seed layer 40 which is formed between an interlaminar film 20 and the rewiring 30 on the substrate and consists of two layers of a first seed layer 41 and a second seed layer 42 from the interlaminar film 20 side. The first seed layer 41 ensures adhesiveness between the interlaminar film 20 at the substrate side and the second seed layer 42. The second seed layer 42 ensures conductivity. The first seed layer 41 forms an island-like structure. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2009016869A Method of manufacturing electronic device 有权
标题翻译：制造电子器件的方法
公开(公告)号：JP2009016869A
公开(公告)日：2009-01-22
申请号：JP2008257111
申请日：2008-10-02
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO ICHIJI , TOMISAKA MANABU , NIIMI AKIHIRO
IPC分类号： H01L21/3205 , H01L23/12
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To appropriately prevent an undercut of a seed layer in a chip size package (CSP) as an electronic device having rewiring formed by electroplating via the seed layer on a substrate. SOLUTION: There are provided a substrate, rewiring 30 formed by electroplating on the substrate, and a conductive seed layer 40 formed between an interlayer film 20 and the rewiring 30 on the substrate and consisting of two layers, that is, a first seed layer 41 and a second seed layer 42 in order from the side of the interlayer film 20, wherein the first seed layer 41 ensures the close adhesion between the interlayer film 20 on the side of the substrate and the second seed layer 42, and the second seed layer 42 ensures conductivity. The first seed layer 41 has an island-shaped structure. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了适当地防止芯片尺寸封装（CSP）中的种子层的底切，作为通过基板上的晶种层通过电镀形成的重新布线的电子器件。解决方案：提供了一种基板，通过在基板上电镀形成的重新布线30，以及形成在基板上的层间膜20和重新布线30之间的导电种子层40，其由两层构成，即第一层晶种层41和第二晶种层42，其中第一晶种层41确保衬底侧的层间膜20和第二晶种层42之间的密合性，第二种子层42确保导电性。第一种子层41具有岛状结构。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2005345304A Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：JP2005345304A
公开(公告)日：2005-12-15
申请号：JP2004166113
申请日：2004-06-03
申请人： Denso Corp , 株式会社デンソー
发明人： TANAKA HIROAKI , TOYODA INEO , KONDO ICHIJI , TOTANI MAKOTO
IPC分类号： G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a highly accurate pressure sensor of a new constitution superior in resistance to corrosion and capable of compact formation.
SOLUTION: A pressure sensor chip 20 is mounted to the upper surface of a circuit chip 1, and the circuit chip 1 has a pad (4a) in a region to which the pressure sensor chip 20 is not mounted in the upper surface. A sheet 31 made of a resin of a flexible printed wiring board 30 is crimped to the pressure sensor chip 20 and the circuit chip 1. Wires (32a and 32b) of the flexible printed wiring board 30 are joined to pads (26a and 26b) of the pressure sensor chip 20 and the pad (4a) of the circuit chip 1. Their joined parts are sealed with the sheet 31 made of a resin of the flexible printed wiring board 30.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的耐腐蚀性并且能够紧密形成的新型结构的高精度压力传感器。解决方案：压力传感器芯片20安装在电路芯片1的上表面，并且电路芯片1在压力传感器芯片20未安装在上表面的区域中具有焊盘（4a）。由柔性印刷电路板30的树脂构成的片31被压接到压力传感器芯片20和电路芯片1.柔性印刷线路板30的导线（32a和32b）与焊盘（26a和26b）接合，压力传感器芯片20和电路芯片1的焊盘（4a）。它们的接合部分被由柔性印刷电路板30的树脂制成的片材31密封。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005265554A Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：JP2005265554A
公开(公告)日：2005-09-29
申请号：JP2004077130
申请日：2004-03-17
申请人： Denso Corp , 株式会社デンソー
发明人： TOYODA INEO , TANAKA HIROAKI , KONDO ICHIJI , TOTANI MAKOTO
IPC分类号： G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a small-sized highly-accurate pressure sensor having excellent corrosion resistance.
SOLUTION: In a pressure sensor chip 21, a plurality of pads 25a, 25b are arranged on positions symmetrical to the diaphragm, on the periphery of a diaphragm. On a wiring board 30, a plurality of patterned wiring 32a, 32b are sealed by a thermoplastic resin sheet 31. The thermoplastic resin sheet 31 on the wiring board 30 is thermo-compression bonded to the pressure sensor chip 21, and each wiring 32a, 32b on the wiring board 30 is bonded to each pad 25a, 25b of the pressure sensor chip 21, and each bonded part is sealed by the thermoplastic resin sheet 31.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异耐腐蚀性的小型高精度压力传感器。解决方案：在压力传感器芯片21中，多个焊盘25a，25b布置在隔膜对称的位置上。在布线板30上，多个图案化布线32a，32b被热塑性树脂片31密封。布线板30上的热塑性树脂片31被热压粘合到压力传感器芯片21上，并且每个布线32a， 32b被接合到压力传感器芯片21的每个焊盘25a，25b上，并且每个接合部分被热塑性树脂片31密封。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005033130A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005033130A
公开(公告)日：2005-02-03
申请号：JP2003273455
申请日：2003-07-11
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO ICHIJI , MAYAMA KEIJI , MIURA SHOJI
IPC分类号： H01L21/28 , H01L21/60 , H01L29/41
CPC分类号： H01L24/02 , H01L24/73 , H01L2224/0401 , H01L2224/16 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To prevent a semiconductor wafer from being warped to an utmost in manufacturing in a semiconductor chip wherein a metal electrode including an external connection Ni film is provided on an Al electrode formed on the front surface of a semiconductor substrate, and a rear electrode is provided on the rear surface of the semiconductor substrate. SOLUTION: In the semiconductor chip wherein an Al electrode 11 is provided on a front surface 1a, which is an element formation surface, of a semiconductor substrate 1 and a rear electrode 4 is formed on the rear surface 1b of the semiconductor substrate 1, a metal electrode 13 configured by laminating an Ni plating layer 13a and an Au plating layer 13b successively from the side of a front surface is formed on the front surface of the Al electrode 11, the rear electrode 4 is composed of an Ni film 4b formed by physical vapor deposition, and the film stress of the Ni film 4b is three-times or more as large as the film stress of the Ni plating layer 13a in the metal electrode 13. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了防止半导体晶片在半导体芯片的前表面上形成的Al电极上设置有包括外部连接Ni膜的金属电极的半导体芯片的制造中翘曲并且在半导体基板的后表面上设置有后电极。解决方案：在半导体衬底1和后电极4的后表面1b上形成半导体衬底1和后电极4的半导体芯片，其中Al电极11设置在作为元件形成表面的正面1a上如图1所示，在Al电极11的前表面上形成有从前表面一侧层叠Ni镀层13a和Au镀层13b构成的金属电极13，后电极4由Ni膜 4b，并且Ni膜4b的膜应力是金属电极13中的Ni镀层13a的膜应力的三倍以上。（C）2005， JPO＆NCIPI

9. 发明专利

JP2005026612A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005026612A
公开(公告)日：2005-01-27
申请号：JP2003270451
申请日：2003-07-02
申请人： Denso Corp , 株式会社デンソー
发明人： KAYUKAWA KIMIJI , KONDO ICHIJI , KATO NAOTO , MIURA SHOJI , WATANABE TAKENAO
IPC分类号： H01L21/28 , H01L21/52
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a sufficient junction life is assured in the process of soldering a semiconductor substrate to a header or the like by using an Sn-based Pb-free solder.
SOLUTION: Counter-sputtering is performed on the formation surface S of a semiconductor substrate 1 for removing a natural oxide film from the formation surface S. A Ti film 2 of 200-300 nm thick is formed by sputtering on the formation surface S of the semiconductor substrate 1, and then an Ni layer 3 of 500-600 nm thick is formed by sputtering on the Ti film 2, and a protective film of Au or the like of 30-50 nm thick is formed by sputtering on the Ni layer 3. A heat treatment is performed in an Ni-filled quartz pipe type heat treatment furnace for forming a Ti-Ni layer 4 to serve as a solder barrier layer along the interface between the Ti film 2 and Ni layer 3.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体器件，其中在通过使用Sn基无铅焊料将半导体衬底焊接到集管或其类似物的过程中确保足够的连接寿命。解决方案：在从形成表面S去除自然氧化膜的半导体衬底1的形成表面S上进行反溅射。通过在形成表面上溅射形成200-300nm厚的Ti膜2 S，然后通过在Ti膜2上溅射形成500-600nm厚的Ni层3，通过溅射形成30nm至30nm的Au等的保护膜 Ni层3.在用于形成Ti-Ni层4的Ni填充的石英管式热处理炉中进行热处理，以沿着Ti膜2和Ni层3之间的界面作为阻焊层。
版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2010135811A Semiconductor sensor and method of plating semiconductor device 有权
标题翻译：半导体传感器和半导体器件的方法
公开(公告)号：JP2010135811A
公开(公告)日：2010-06-17
申请号：JP2010004134
申请日：2010-01-12
申请人： Denso Corp , 株式会社デンソー
发明人： TANAKA HIROAKI , TOYODA INEO , WATANABE YOSHIFUMI , KONDO ICHIJI , MAYAMA KEIJI , ABE KICHIJI
IPC分类号： H01L21/60 , C23C18/16 , C23C18/34 , C23C18/42 , G01F1/34 , G01F1/692 , G01F15/00 , G01L9/00 , H01L21/3205 , H01L23/485 , H01L23/52 , H01L29/84
CPC分类号： G01L19/147 , B81B7/0012 , B81B2207/07 , G01F1/34 , G01F1/692 , G01F15/006 , G01L19/0645 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05558 , H01L2224/05644 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/48475 , H01L2224/48644 , H01L2224/48699 , H01L2224/48744 , H01L2224/48799 , H01L2224/48844 , H01L2224/73265 , H01L2224/85051 , H01L2224/8592 , H01L2924/014 , H01L2924/10253 , H01L2924/15153 , H01L2924/15165 , H01L2924/15788 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要： PROBLEM TO BE SOLVED: To provide a method of plating a semiconductor device, capable of maintaining a uniform thickness of a plating film, preventing the precipitation of plating on the back surface of a semiconductor and preventing the contamination in the subsequent steps, at low cost. SOLUTION: In the method of plating a semiconductor device, when a connection terminal is directly formed on an Al electrode of a semiconductor substrate, electroless plating treatment is performed while the back surface of the substrate is covered with an insulator. By using the method, a semiconductor sensor featuring improved corrosion resistance against a corrosive medium can be produced. The insulator is preferably a glass substrate which is a component of a product. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够保持镀膜厚度均匀的半导体器件的电镀方法，防止半导体背面上的电镀沉淀，并防止后续步骤中的污染，以低成本。解决方案：在电镀半导体器件的方法中，当在半导体衬底的Al电极上直接形成连接端子时，在绝缘体覆盖衬底的背面的同时执行化学镀处理。通过使用该方法，可以制造出具有对腐蚀性介质的耐蚀性改善的半导体传感器。绝缘体优选是作为产品的组分的玻璃基板。版权所有（C）2010，JPO＆INPIT

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