专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2004296224A Light emitting element 审中-公开
公开(公告)号：JP2004296224A
公开(公告)日：2004-10-21
申请号：JP2003085933
申请日：2003-03-26
申请人： Asahi Glass Co Ltd , National Institute Of Advanced Industrial & Technology , 旭硝子株式会社 , 独立行政法人産業技術総合研究所
发明人： ODAKA HIDEFUMI , TAKADA AKIRA , KAWASAKI MASASHI , TACHIBANA HIROAKI , YAMADA JUICHI , OKIMOTO YOICHI , SAWA AKIHITO
IPC分类号： H01L51/50 , H05B33/14 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element without degrading luminous efficiency in a high-current density region nor deteriorating light emission even in a current-carrying state.
SOLUTION: This light emitting element has a positive electrode, a luminescent layer, and a negative electrode. The light emitting element has a first magnetic layer between the positive electrode and the luminescent layer, and a second magnetic layer between the luminescent layer and the negative electrode; and the directions of the magnetic poles of the first magnetic layer and the second magnetic layer are parallel with each other.
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2005317787A Switching element, and array type functional element using same switching element 有权
标题翻译：切换元件和使用相同开关元件的阵列型功能元件
公开(公告)号：JP2005317787A
公开(公告)日：2005-11-10
申请号：JP2004134342
申请日：2004-04-28
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： ODAKAWA AKIHIRO , AKAHO HIROSHI , SATO HIROSHI , YAMADA JUICHI , ISHII YUJI , INOUE AKIRA , SAWA AKIHITO , KAWASAKI MASASHI , TAKAGI HIDENORI , TOKURA YOSHINORI
IPC分类号： H01L27/10 , H01L21/8246 , H01L27/105 , H01L49/02
摘要： PROBLEM TO BE SOLVED: To provide an array type functional element which can be more fined than conventional ones, by using a switching element as the selecting portion of the functional element. SOLUTION: As each switching element, there is used each multilayer structure wherein a strongly correlated electronic material is sandwiched by two or more electrodes. Then, each multilayer structure is so connected in series with each variable-resistance type element of a functional element as to realize a random access memory by arranging the resultant intermediates in the form of an array. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过使用开关元件作为功能元件的选择部分，提供可以比常规的更精细的阵列型功能元件。解决方案：作为每个开关元件，使用每个多层结构，其中强相关的电子材料被两个或更多个电极夹在中。然后，每个多层结构与功能元件的每个可变电阻型元件串联连接，以通过将所得到的中间体排列成阵列来实现随机存取存储器。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005129908A Magnetic switching element and memory device using it 审中-公开
标题翻译：磁性开关元件及其使用的存储器件
公开(公告)号：JP2005129908A
公开(公告)日：2005-05-19
申请号：JP2004267239
申请日：2004-09-14
申请人： Matsushita Electric Ind Co Ltd , National Institute Of Advanced Industrial & Technology , 松下電器産業株式会社 , 独立行政法人産業技術総合研究所
发明人： ODAKAWA AKIHIRO , SATO HIROSHI , YAMADA JUICHI , ISHII YUJI , INOUE AKIRA , AKAHO HIROSHI , KAWASAKI MASASHI , TAKAGI HIDENORI
IPC分类号： G11B5/39 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a method for inverting the magnetized state in a magnetic body with high energy conversion efficiency, a magnetic switching element which substantially reduces energy consumption of the entire magnetic device that changes the magnetized state provided by an external magnetic field, and a memory device using the magnetic switching element. SOLUTION: A magnetic switching element comprises at least one transfer body (1), at least one electrode (2), and at least one free magnetic body (3). The transfer body (1) of the magnetic switching element is made of a perovskite compound containing at least a rare-earth element and an alkaline earth metal. On the transfer body (1), the electrode (2) and the free magnetic body (3) are placed so that they are in parallel with each other, and that they are separated from each other. At least one free magnetic body (3) is magnetically coupled to the transfer body (1), and the transfer body (1) is transferred to a ferromagnetic state or an antiferromagnetic state through injection/induction of electrons/holes, thereby changing at least one magnetization direction of the free magnetic body (3). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于以高能量转换效率来反转磁体的磁化状态的方法，磁性开关元件显着降低整个磁性器件的能量消耗，从而改变由外部电路提供的磁化状态磁场，以及使用该磁性开关元件的存储器件。解决方案：磁性开关元件包括至少一个转移体（1），至少一个电极（2）和至少一个自由磁体（3）。磁性开关元件的转移体（1）由至少包含稀土元素和碱土金属的钙钛矿化合物制成。在转印体（1）上，电极（2）和自由磁体（3）彼此平行放置，并且彼此分离。至少一个自由磁体（3）磁耦合到传输体（1），并且传输体（1）通过注入/感应电子/孔而被转移到铁磁状态或反铁磁状态，从而至少改变自由磁体（3）的一个磁化方向。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2014195794A 導電性パターンの形成方法有权
标题翻译：形成导电图案的方法
公开(公告)号：JP2014195794A
公开(公告)日：2014-10-16
申请号：JP2013186922
申请日：2013-09-10
申请人：独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology
发明人： YAMADA JUICHI , HASEGAWA TATSUO , MATSUOKA AKIRA , KATO AYANO
IPC分类号： B05D5/12 , B05D3/06 , C09D11/00
摘要：【課題】金属ナノ粒子インクを用いて、高精細で高導電性の導電性パターンを形成する方法を提供する。【解決手段】基体上に形成された絶縁膜に対して、紫外線をパターン領域に照射した後、粒子表面が有機分子層で保護された金属ナノ粒子を溶媒中に分散したインクを、前記基体上に塗布することにより、前記パターン領域に前記インクを付着・凝集させ、導電性パターンを得る。塗布は、基体との間隙又は接触部に前記インクが保持される塗布部材によることが好ましく、ブレード塗布やロール塗布などが好ましい。【選択図】図1
摘要翻译：要解决的问题：提供一种通过使用金属纳米颗粒油墨形成具有高清晰度和高导电性的导电图案的方法。溶液：通过涂覆其中颗粒表面被有机分子层保护的金属纳米颗粒分散在溶剂中的油墨在用紫外线照射形成在基板上的绝缘膜的图案区域之后，在基板上，并且在图案区域上粘附并聚集墨以获得导电图案。优选通过将墨水保持在构件和基板之间的间隙或接触部分中的涂布构件进行涂布，并且优选刮涂，辊涂等。

5. 发明专利

JP2007305807A Manufacturing method for organic semiconductor device 有权
标题翻译：有机半导体器件的制造方法
公开(公告)号：JP2007305807A
公开(公告)日：2007-11-22
申请号：JP2006133068
申请日：2006-05-11
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： HASEGAWA TATSUO , HIRAOKA MAKI , YAMADA JUICHI , TOKURA YOSHINORI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/288 , H01L21/336 , H01L51/05 , H01L51/30 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To make possible the creation of an electrode used for organic semiconductor devices by the solution process of an organic metal thin film, even though there are used conductive charge transferring complex materials whose solutions are formed hardly due to their generally low solubilities in solvents.
SOLUTION: A manufacturing method for organic semiconductor devices includes a process for forming an organic semiconductor layer, and a process for forming a conductive charge transferring complex electrode on a portion of the organic semiconductor layer. In the formation of the conductive charge transferring complex electrode, electron donating molecules and electron accepting molecules are solved respectively in different organic solvents from each other to obtain two kinds of inks, and to make them react by discharging them simultaneously or alternately from their respective ink heads.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了有可能通过有机金属薄膜的溶液处理来形成用于有机半导体器件的电极，即使使用导电电荷转移复合材料，其解决方案几乎不由于它们的形成在溶剂中通常溶解度低。解决方案：有机半导体器件的制造方法包括形成有机半导体层的工艺，以及在有机半导体层的一部分上形成导电电荷转移复电极的工艺。在导电电荷转移复电极的形成中，给电子分子和电子接受分子分别溶解在不同的有机溶剂中以获得两种油墨，并使它们通过从它们各自的油墨同时或交替地排出而反应头。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2005223175A Organic semiconductor compound and thin-film transistor 有权
标题翻译：有机半导体化合物和薄膜晶体管
公开(公告)号：JP2005223175A
公开(公告)日：2005-08-18
申请号：JP2004030296
申请日：2004-02-06
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： HASEGAWA TATSUO , ABE YASUSHI , YAMADA JUICHI , TOKURA YOSHINORI , NISHIMURA KAZUKUNI , SAITO GUNJI
IPC分类号： H01L51/05 , H01L21/336 , H01L29/786 , H01L51/00 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide an organic semiconductor compound, having a high mobility which can be synthesized and purified by a method simpler and more inexpensive than prior art methods, and a thin-film transistor, and also to realize practical manufacturing of an organic thin-film transistor by evaporating in a vacuum, while keeping the high mobility or by increasing a sublimation temperature.
SOLUTION: The organic semiconductor compound has a structure shown by Formula which follows or has the isomer structure thereof.The semiconductor compound may be substituted, and in this structure, X denotes sulfur or selenium.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高迁移率的有机半导体化合物，其可以通过比现有技术方法更简单和更便宜的方法合成和纯化，以及薄膜晶体管，并且还实现实际制造通过在真空中蒸发同时保持高迁移率或通过升高升华温度来制造有机薄膜晶体管。有机半导体化合物具有如下结构或其异构体结构。半导体化合物可以被取代，在该结构中，X表示硫或硒。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2013004637A Evaluation method of organic thin film transistor 审中-公开
标题翻译：有机薄膜晶体管的评估方法
公开(公告)号：JP2013004637A
公开(公告)日：2013-01-07
申请号：JP2011132799
申请日：2011-06-15
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所 , Fuji Electric Co Ltd , 富士電機株式会社
发明人： HASEGAWA TATSUO , MATSUI HIROYUKI , TSUTSUMI JUNYA , YAMADA JUICHI , KANAI NAOYUKI
IPC分类号： H01L21/336 , H01L29/786 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide an evaluation method of an organic thin film transistor capable of observing the microscopic aspect of the electrical charge state in the channel region of an organic thin film transistor, and capable of capturing a change in electrical charge density due to a defect such as charge trap.SOLUTION: In the evaluation method of an organic thin film transistor having a gate electrode, a source electrode, a drain electrode, a gate insulating film layer, and an organic semiconductor layer, and in which the electrical charge state in a channel region defined by the electrodes is controlled by a voltage applied via the electrodes, a modulation voltage oscillating with time by a rectangular wave or a sine wave is applied via the electrodes, the channel region is irradiated with laser light and the transmitted light thereof is obtained, the intensity of transmitted light (T) when the modulation voltage is high, and a value (ΔT) obtained by subtracting the intensity of transmitted light when the modulation voltage is low from the intensity of transmitted light (T) are measured, and then the electrical charge density distribution of the channel region is determined based on these values (T and ΔT).
摘要翻译：要解决的问题：为了提供能够观察有机薄膜晶体管的沟道区域中的电荷状态的微观方面并且能够捕获电荷变化的有机薄膜晶体管的评估方法由于诸如电荷陷阱的缺陷导致的密度。解决方案：在具有栅电极，源电极，漏电极，栅绝缘膜层和有机半导体层的有机薄膜晶体管的评估方法中，其中沟道中的电荷状态由电极限定的区域由通过电极施加的电压进行控制，经由电极施加随时间被矩形波或正弦波振荡的调制电压，通过激光照射通道区域并获得透射光，调制电压高时的透射光强度（T）和从透射光强度（T）减去调制电压为低时的透射光强度而得到的值（ΔT），然后，基于这些值（T和ΔT）确定通道区域的电荷密度分布。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2015044373A 積層体及びその製造方法有权
标题翻译：层压板及其制造方法
公开(公告)号：JP2015044373A
公开(公告)日：2015-03-12
申请号：JP2013177676
申请日：2013-08-29
申请人：独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology
发明人： HASEGAWA TATSUO , YAMADA JUICHI
IPC分类号： B32B15/08 , B32B27/30 , C08J5/18 , H05K3/12 , H05K3/14
摘要：【課題】基体から剥がれ難い金属層を備える積層体、及び該積層体の製造方法を提供する。【解決手段】基体と金属層の間にポリマー層を備える積層体において、前記金属層と前記ポリマー層の界面で、前記ポリマー層を構成する高分子主鎖から伸びたCOOに前記金属層の金属が化学的に結合されている構造を実現することにより、剥離強度を向上させた。ポリマー層はフッ素系ポリマーであることが好ましく、金属層は、金属ナノ粒子が凝集した金属層や蒸着層が適する。【選択図】図2
摘要翻译：要解决的问题：提供一种层叠体，该层压体包含难以从基体上剥离的金属层，并提供一种层压体的制造方法。解决方案：包括基体和金属层之间的聚合物层的层压体具有剥离强度通过在金属层和聚合物层之间的界面实现具有从构成聚合物层的聚合物主链延伸的COO化学键合的金属层的金属的结构而改进。聚合物层优选为基于氟的聚合物，并且具有聚集的金属纳米颗粒的金属层或气相沉积层适用于金属层。

9. 发明专利

JP2012049291A Method for manufacturing single-crystal organic semiconductor thin film 有权
标题翻译：制造单晶有机半导体薄膜的方法
公开(公告)号：JP2012049291A
公开(公告)日：2012-03-08
申请号：JP2010189315
申请日：2010-08-26
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： HASEGAWA TATSUO , MINEMAWARI HIROMI , YAMADA JUICHI
IPC分类号： H01L21/368 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To manufacture a single-crystal organic semiconductor thin film by a printing method, of which nearly entire region is composed of a single crystal.SOLUTION: A method for manufacturing a single-crystal organic semiconductor thin film comprises: preparing a first ink obtained by dissolving an organic semiconductor in an organic solvent having high affinity to the organic semiconductor, and a second ink composed of an organic solvent having low affinity to the organic semiconductor; and forming a region for reserving an ink obtained by mixing the first ink and the second ink on a substrate. A part of the region for reserving the ink is shaped to generate a seed crystal with a high degree of efficiency, and from a starting point of the part, a single crystal is formed over a nearly entire region of the region for reserving the ink.
摘要翻译：要解决的问题：通过印刷方法制造单晶有机半导体薄膜，其几乎整个区域由单晶组成。解决方案：制造单晶有机半导体薄膜的方法包括：制备通过将有机半导体溶解在对有机半导体具有高亲和力的有机溶剂中获得的第一油墨和由有机溶剂组成的第二油墨对有机半导体具有低亲和力; 以及形成用于将通过将第一油墨和第二油墨混合在基材上而获得的油墨的区域。用于保留油墨的区域的一部分成形为以高效率产生晶种，并且从该部分的起点，在用于保留油墨的区域的几乎整个区域上形成单晶。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2008153318A Method for manufacturing organic conductive thin film 有权
标题翻译：制造有机导电薄膜的方法
公开(公告)号：JP2008153318A
公开(公告)日：2008-07-03
申请号：JP2006337713
申请日：2006-12-15
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： HIRAOKA MAKI , HASEGAWA TATSUO , YAMADA JUICHI , TOKURA YOSHINORI
IPC分类号： H01L21/288 , H01L21/28 , H01L21/3205 , H01L51/05 , H01L51/30 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To manufacture a conductive thin film having electric conductivity identical to that of a conductive organic charge transfer complex single crystal with a printing method.
SOLUTION: The method for manufacturing an organic conductive thin film includes a step for preparing a first solvent and a second solvent in which an organic polymer is further dissolved to at least one solution of the first solution obtained by dissolving electron donor molecule into an organic solvent and the second solvent obtained by dissolving electron receptor molecule into the organic solvent and a step for mixing the first solution and the second solution at the same location on the substrate.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过印刷方法制造具有与导电有机电荷转移络合物单晶的导电性相同的导电性薄膜的导电薄膜。解决方案：制造有机导电薄膜的方法包括制备第一溶剂和第二溶剂的步骤，其中将有机聚合物进一步溶解到至少一种通过将电子给体分子溶解获得的第一溶液的溶液有机溶剂和通过将电子受体分子溶解在有机溶剂中而获得的第二溶剂和在基板上的相同位置混合第一溶液和第二溶液的步骤。版权所有（C）2008，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式