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1. 发明授权

US5185572A Scanning tunneling potentio-spectroscopic microscope and a data detecting method 失效
标题翻译：扫描隧道电子显微镜和数据检测方法
公开(公告)号：US5185572A
公开(公告)日：1993-02-09
申请号：US585880
申请日：1990-09-20
申请人： Akira Yagi , Takao Okada , Seizo Morita , Nobuo Mikoshiba
发明人： Akira Yagi , Takao Okada , Seizo Morita , Nobuo Mikoshiba
IPC分类号： G01Q60/12 , G01B7/34 , G01Q30/04 , G01Q60/14
CPC分类号： G01Q60/12 , B82Y35/00 , G01B7/34 , G01Q30/04 , G01Q60/14 , Y10S977/852
摘要： A bias voltage U.sub.B including a sine-wave voltage U.sub.T sin.omega. .sub.o t and an off-set voltage U.sub.REG is applied to an electrode on a sample. A potential U.sub.1 of the electrode is represented by: U.sub.1 =U.sub.REG +U.sub.T sin.omega. .sub.o t. A voltage including the bias voltage U.sub.B and a voltage .DELTA.U is applied to an electrode on the sample. A probe is approached to the sample by several nm, and a tunnel current I.sub.T flows therebetween. And the probe scans the surface of the sample. During the scan, the position of the probe is servo-controlled in the z-direction, to make constant the average absolute value of the tunnel current. The servo voltage is recorded thereby obtaining an STM image. Given that the potential difference between the electrode and a surface portion facing the probe is U.sub.S (x), the average of U.sub.1 +U.sub.S (x) becomes zero when the average of the tunnel current I.sub.T is zero. Accordingly, =0, that is, U.sub.S (x)=-U.sub.REG. Thus, by recording-U.sub.REG the potential distribution U.sub.S (x) on the sample surface is determined. Spectroscopic data is obtained by an analog operation unit, on the basis of a differential conductance .differential.I.sub.T /.differential.U.sub.T calculated from the tunnel current signal I.sub.T and the bias voltage U.sub.T.

2. 发明授权

US5025153A Scanning tunneling spectroscope and a spectroscopic information detection method 失效
标题翻译：扫描隧道光谱仪和光谱信息检测方法
公开(公告)号：US5025153A
公开(公告)日：1991-06-18
申请号：US549469
申请日：1990-07-06
申请人： Takao Okada , Akira Yagi , Seizo Morita , Nobuo Mikoshiba
发明人： Takao Okada , Akira Yagi , Seizo Morita , Nobuo Mikoshiba
IPC分类号： G01B7/34 , G01N27/00 , G01N37/00 , G01Q10/00 , G01Q60/10 , G01Q60/12 , H01J37/00 , H01J37/244 , H01J37/28
CPC分类号： G01Q60/12 , B82Y35/00 , Y10S977/851 , Y10S977/861
摘要： A scanning tunnel spectroscope comprises a generator for applying a bias voltage (V.sub.T) of a sin wave between a sample and probe, an I-V converter for converting a tunnel current flowing when the probe is set close to the sample, to a tunnel current representing voltage singal (I.sub.T), a detector for detecting the absolute value of the voltage signal (I.sub.t), and a servo circuit for servo-controlling a distance between the sample and probe using the absolute value with the servo time constant set larger than five times the period of the bias voltage. The information concerning the unevenness of the sample is obtained based on an output of the servo control means. A unit is provided for effecting the analog operation to derive a differential conductance based on the tunnel current on the real time basis and measuring the unevenness data and differential conductance between the sample and probe kept constant.

3. 发明授权

US5378983A Scanning tunneling potentio-spectroscopic microscope and a data detecting method 失效
标题翻译：扫描隧道电位显微镜和数据检测方法
公开(公告)号：US5378983A
公开(公告)日：1995-01-03
申请号：US977572
申请日：1992-11-17
申请人： Akira Yagi , Takao Okada , Seizo Morita , Nobuo Mikoshiba
发明人： Akira Yagi , Takao Okada , Seizo Morita , Nobuo Mikoshiba
IPC分类号： G01Q60/12 , G01B7/34 , G01Q30/04 , G01Q60/14 , G01K1/16
CPC分类号： G01Q60/12 , B82Y35/00 , G01B7/34 , G01Q30/04 , G01Q60/14 , Y10S977/852
摘要： A scanning tunneling potentio-spectroscopic microscope, includes a conductive probe and a circuit for selectively applying one of first, second and third bias voltages to a sample. A tunnel current flowing between the probe and sample is detected, and a tunnel current signal is produced upon detection thereof. A servo circuit controls a distance between the probe and sample on the basis of the tunnel current signal by producing a servo signal as a feedback signal. A hold circuit switches the servo circuit between operating and non-operating states. Configuration data on a surface of the sample is obtained, on the basis of the servo signal, with the first bias voltage applied to the sample and with the servo circuit in the operating state. A first dependence of the tunnel current on the bias voltage is obtained, from the tunnel current signal and the second bias voltage, with the second bias voltage applied to the sample and with the servo circuit in the non-operating state. A second dependence of the tunnel current on the bias voltage is obtained from the tunnel current signal and the third bias voltage, with the third bias voltage applied to the sample and with the servo circuit in the non-operating state. Electron state data is obtained on the basis of the first dependence, and potential data is obtained on the basis of the first and second dependencies.
摘要翻译：扫描隧道电位分光显微镜包括导电探针和用于选择性地将一个第一，第二和第三偏置电压施加到样品的电路。检测在探针和样品之间流动的隧道电流，并且在检测到隧道电流信号时产生隧道电流信号。伺服电路通过产生伺服信号作为反馈信号，根据隧道电流信号来控制探头和样品之间的距离。保持电路在操作状态和非工作状态之间切换伺服电路。基于伺服信号获得样品表面上的配置数据，其中施加到样品的第一偏置电压和处于操作状态的伺服电路。从隧道电流信号和第二偏置电压获得隧道电流对偏置电压的第一依赖性，其中第二偏置电压施加到样品并且伺服电路处于非操作状态。从隧道电流信号和第三偏置电压获得隧道电流对偏置电压的第二依赖性，其中第三偏压施加到样品并且伺服电路处于非操作状态。基于第一依赖性获得电子状态数据，并且基于第一和第二依赖性获得潜在数据。

4. 发明授权

US4877957A Scanning type tunnel microscope 失效
标题翻译：扫描型隧道显微镜
公开(公告)号：US4877957A
公开(公告)日：1989-10-31
申请号：US70775
申请日：1987-07-07
申请人： Takao Okada , Toshihito Kouchi , Shuzo Mishima , Haruo Ogawa , Seizo Morita , Nobuo Mikoshiba
发明人： Takao Okada , Toshihito Kouchi , Shuzo Mishima , Haruo Ogawa , Seizo Morita , Nobuo Mikoshiba
IPC分类号： G01Q10/00 , G01Q40/02 , G01Q30/08 , G01Q60/16 , H01J37/26
CPC分类号： G01Q60/16 , B82Y35/00 , Y10S977/861 , Y10S977/872
摘要： A scanning type tunnel microscope comprises a sample holding member for supporting a sample and a scanning probe which is arranged to face the sample to be separated therefrom by a very small distance and a supported by a scanning probe holding member. A tunnel current is flowed between the sample and scanning probe upon application of a voltage thereacross. A first actuator is coupled to the sample holding member and a second actuator is coupled to the scanning probe holding member so that the first and second actuators relatively drive said sample and said scanning probe in an axial direction and in a planar direction through said sample holding member and said scanning probe holding member. A differential micrometer is connected to the first actuator to move the actuator in the axial direction, and the micrometer and the second actuator are fixed on a substrate.
摘要翻译：扫描型隧道显微镜包括用于支撑样本的样本保持构件和扫描探针，扫描探针被布置成面对要被分离的样本非常小的距离并由扫描探针保持构件支撑。在施加电压之间时，隧道电流在样品和扫描探针之间流动。第一致动器联接到样品保持构件，第二致动器联接到扫描探针保持构件，使得第一和第二致动器沿轴向方向和平面方向相对地驱动所述样品和扫描探针通过所述样品保持构件和扫描探针保持构件。差动千分尺连接到第一致动器以使致动器沿轴向移动，千分尺和第二致动器固定在基板上。

5. 发明授权

US5245207A Integrated circuit 失效
标题翻译：集成电路
公开(公告)号：US5245207A
公开(公告)日：1993-09-14
申请号：US568956
申请日：1990-08-17
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： H01L27/088 , H01L29/49
CPC分类号： H01L29/49 , H01L27/0883 , H01L29/4916 , H01L29/4966 , H01L29/4975
摘要： A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.
摘要翻译：即使在室温或液氮温度下也可以通过使用耗尽型MOSFET来实现耗尽操作，而不会在与栅极电极下方的沟道部分掺杂具有与半导体衬底的导电类型相反的导电类型的杂质。此外，该FET可以与增强型FET一起构造逆变器，并且它们可以集成在一个衬底上。

6. 发明授权

US4516049A Multi-layer acoustic surface wave device having minimal delay time temperature coefficient 失效
标题翻译：具有最小延迟时间温度系数的多层声表面波器件
公开(公告)号：US4516049A
公开(公告)日：1985-05-07
申请号：US536926
申请日：1983-09-28
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuyoshi Sugai
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuyoshi Sugai
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/25 , H03H9/42
CPC分类号： H03H9/02834 , H03H9/02574
摘要： An acoustic surface wave device includes a substrate made of an elastic material, a multilayer structure disposed on a surface of the substrate and having a silicon dioxide layer and an aluminum nitride layer superimposed on each other, and electrodes having predetermined configurations formed on the multilayer structure. The main component of the elastic material is a silicon monocrystal, whose temperature coefficient of delay time for acoustic surface waves is positive, and the piezo-electric axis of the aluminum nitride is either perpendicular or parallel to the surface of the substrate, with a negative delay coefficient, counteracting that of the substrate.
摘要翻译：声表面波装置包括由弹性材料制成的基板，设置在基板的表面上并具有彼此重叠的二氧化硅层和氮化铝层的多层结构，以及形成在多层结构上的具有预定构造的电极。弹性材料的主要成分是硅单晶，其声表面波的延迟时间的温度系数为正，氮化铝的压电轴线垂直于或平行于衬底的表面，负极延迟系数，抵消衬底的延迟系数。

7. 发明授权

US5393699A Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride 失效
标题翻译：利用烷基铝氢化物利用选择性沉积的沉积成膜方法
公开(公告)号：US5393699A
公开(公告)日：1995-02-28
申请号：US969353
申请日：1992-10-30
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , C23C14/34 , C23C16/02 , C23C16/04 , C23C16/18 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L21/44
CPC分类号： H01L21/32051 , H01L21/28562 , H01L2924/0002
摘要： By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.
摘要翻译：通过提供一种沉积膜形成方法，其中使用氢化铝和氢的方法根据CVD方法选择性地沉积铝或主要由铝构成的金属的沉积膜形成方法，然后纯铝或主要由铝构成的金属是非金属的，可以在精细的开口内或在绝缘层上形成质量好的导电膜。

8. 发明授权

US5180687A Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride 失效
标题翻译：利用ALKYL铝氢化物利用选择性沉积的沉积膜形成方法
公开(公告)号：US5180687A
公开(公告)日：1993-01-19
申请号：US587045
申请日：1990-09-24
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , C23C14/34 , C23C16/02 , C23C16/04 , C23C16/18 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： H01L21/32051 , H01L21/28562 , H01L2924/0002
摘要： By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

9. 发明授权

US5091210A Plasma CVD of aluminum films 失效
标题翻译：铝膜等离子体CVD
公开(公告)号：US5091210A
公开(公告)日：1992-02-25
申请号：US584637
申请日：1990-09-19
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , C23C16/452 , C23C16/50 , H01L21/28 , H01L21/285
CPC分类号： C23C16/452 , C23C16/20
摘要： A deposited film formation method which forms an aluminum film by use of the plasma CVD method,wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A).A deposited film formation method which forms an aluminum film by use of the plasma CVD method, comprising:(a) the step of arranging a substrate having an electron donative surface (a) and a non-electron donative surface (B) in a space for deposited film formation equipped with a reverse flow preventive means into plasma, and(b) the step of introducing a gas of trimethylaluminum and hydrogen gas into said space for deposited film formation, said aluminum film being selectively formed on said electron donative surface (A).
摘要翻译：使用等离子体CVD法形成铝膜的沉积膜形成方法，其中具有给电子表面（A）和非电子给体表面（B）的基板被布置在用于沉积膜形成的空间中，具有布置了朝向所述基板的横截面面积增加的部分，并且将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中以在所述给电子表面（A）上选择性地沉积铝膜。一种通过使用等离子体CVD法形成铝膜的沉积膜形成方法，包括：（a）将具有给电子表面（a）和非电子给体表面（B）的衬底排列在空间中的步骤（b）将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中的步骤，所述铝膜选择性地形成在所述给电子表面（A ）。

10. 发明授权

US4448525A Crystal defects analyzer 失效
标题翻译：水晶缺陷分析仪
公开(公告)号：US4448525A
公开(公告)日：1984-05-15
申请号：US277645
申请日：1981-06-26
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kenji Wasa
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kenji Wasa
IPC分类号： G01N21/00 , G01N21/17 , G01N21/87 , G01N23/225 , G01N29/00 , G01N29/24 , G01N29/04
CPC分类号： G01N29/2425 , G01N21/1702 , G01N2291/02863 , G01N2291/0289 , G01N2291/0426
摘要： A crystal defect analyzer comprises acousto-electric transducer means disposed in close adherence to a sample to be analyzed through the medium of a filter layer which functions to intercept light or electrons or particles emitted from said excitation means and to transmit only acoustic waves produced within said sample by excitation, thereby it can attain higher response and sensitivity, smaller size, higher resistance to vibration and superior operationality.
摘要翻译：晶体缺陷分析仪包括声电传感器装置，其通过滤光层的介质紧密地附着于要分析的样品，该滤光层用于截取从所述激发装置发出的光或电子或粒子，并且仅传输由所述激光装置产生的声波通过激励采样，从而可以获得更高的响应和灵敏度，更小的尺寸，更高的抗振动性和更好的操作性。

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