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1. 发明授权

US4626704A Voltage level converting circuit 失效
标题翻译：电压电平转换电路
公开(公告)号：US4626704A
公开(公告)日：1986-12-02
申请号：US724793
申请日：1985-04-19
申请人： Akira Takata , Toyofumi Takahashi
发明人： Akira Takata , Toyofumi Takahashi
IPC分类号： G11C17/00 , G11C5/14 , G11C11/409 , G11C16/06 , G11C16/12 , H01L27/10 , H03K5/02 , H03K17/22 , H03K19/00 , H03K19/0185 , H03K19/0948 , H03K5/00
CPC分类号： H03K19/09485 , G11C16/12 , G11C5/143 , G11C5/147 , H03K17/223 , H03K19/0008 , H03K19/018521 , H03K19/0948
摘要： A voltage level converting circuit for use in semiconductor devices including memory such as ROMs, PROMs and EPROMs comprises an input terminal to which an input signal is applied, a voltage level detecting circuit for detecting the voltage level of the input signal received by the input terminal and supplying an output signal of the voltage level determined in response to the level of the input signal, an inverter connected to the voltage level detecting circuit and a CMOS device having a pair of outside source/drain terminals connected between the input terminal and a first reference voltage, a gate terminal connected to the output of the inverter and the inner interconnected source/drain terminals connected to an output terminal of the circuit.
摘要翻译：一种用于包括诸如ROM，PROM和EPROM的存储器的半导体器件的电压电平转换电路包括：施加输入信号的输入端子，用于检测由输入端子接收的输入信号的电压电平的电压电平检测电路并提供响应于输入信号的电平确定的电压电平的输出信号，连接到电压电平检测电路的反相器和连接在输入端和第一端之间的一对外部源极/漏极端子的CMOS器件参考电压，连接到逆变器的输出的栅极端子和连接到电路的输出端子的内部互连的源极/漏极端子。

2. 发明授权

US06177706B1 Field-effect thin-film transistor device 失效
标题翻译：场效应薄膜晶体管器件
公开(公告)号：US06177706B1
公开(公告)日：2001-01-23
申请号：US08918138
申请日：1997-08-27
申请人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
发明人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
IPC分类号： H01L2701
CPC分类号： H01J37/32678 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81C1/0038 , B81C2201/0109 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , G01L9/0042 , G01P15/0802 , G02F2001/136281 , H01H59/0009 , H01L27/12 , H01L27/1203 , H01L31/03762 , H01L31/0693 , H01L31/0725 , H01L31/073 , H01L31/078 , H01L31/1804 , H01L31/1828 , H01L31/186 , H02N1/002 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atoms currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anistropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.
摘要翻译：为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104）从多个规定方向照射Ne原子电流，使得最上层（1104）的晶体取向被转换成使得（111）面向上指向的取向。采用掩模构件（106）作为屏蔽构件，从其底面对基板（1102）进行静电蚀刻，从而形成V形槽（1112）。此时，最上层（1104）用作蚀刻停止器。因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。

3. 发明授权

US5866940A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5866940A
公开(公告)日：1999-02-02
申请号：US897419
申请日：1997-07-21
申请人： Akira Takata , Tetsuo Hikawa , Takashi Sawada , Tom Dang-hsing Yiu , Ful-Long Ni
发明人： Akira Takata , Tetsuo Hikawa , Takashi Sawada , Tom Dang-hsing Yiu , Ful-Long Ni
IPC分类号： H01L27/04 , H01L21/82 , H01L21/822 , H01L23/485 , H01L23/50 , H01L27/10 , H01L23/52
CPC分类号： H01L24/06 , H01L23/50 , H01L24/49 , H01L2224/05554 , H01L2224/05599 , H01L2224/45124 , H01L2224/48247 , H01L2224/48699 , H01L2224/49171 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01082 , H01L2924/13091 , H01L2924/3011
摘要： In order to reduce the chip size of a semiconductor device as well as to separate noises between at least two types of pads having different functions, at least one Vcc and at least one Vss are provided on opposite edges of a package (101) so that output pins or I/O pins are arranged therebetween and input pins are arranged outside the same. Non-connected excess pins (NC) are arranged on upper and lower boundaries, for omitting wires and reducing the chip size.
摘要翻译：为了减少半导体器件的芯片尺寸以及在具有不同功能的至少两种类型的焊盘之间分离噪声，在封装（101）的相对边缘上提供至少一个Vcc和至少一个Vss，使得输出引脚或I / O引脚布置在其间，输入引脚布置在其外部。不连接的多余引脚（NC）布置在上边界和下边界，用于省略导线并减小芯片尺寸。

4. 发明授权

US5650959A Memory device having virtual ground line 失效
标题翻译：具有虚拟接地线的存储器件
公开(公告)号：US5650959A
公开(公告)日：1997-07-22
申请号：US540473
申请日：1995-10-10
申请人： Tetsuya Hayashi , Akira Takata , Kazuhiro Watanabe
发明人： Tetsuya Hayashi , Akira Takata , Kazuhiro Watanabe
IPC分类号： G11C17/00 , G11C7/02 , G11C16/04 , G11C17/12 , G11C17/18 , G11C11/34
CPC分类号： G11C17/126
摘要： This memory device includes a plurality of word lines, a plurality of bit lines, a plurality of virtual ground lines, memory cells arranged at the intersections between the word and bit lines, a potential setting unit for setting the potential of the virtual ground lines to a ground or bias level, and a sense amplifier for detecting storage information of a target memory cell through the bit line when the virtual ground line connected to the target memory cell is set to the ground level by the potential setting unit. To read out information from a memory cell Mij, a virtual ground line GLi connected to the electrode of this memory cell is set to the ground level, and the remaining virtual ground lines are connected to a common bias potential line set to the bias level.
摘要翻译：这种存储装置包括多个字线，多个位线，多个虚拟接地线，布置在字和位线之间的交叉处的存储器单元，用于将虚拟接地线的电位设置为接地或偏置电平;以及读出放大器，用于当通过电位设定单元将连接到目标存储单元的虚拟地线设置为地电平时，通过位线检测目标存储单元的存储信息。为了从存储单元Mij读取信息，将连接到该存储单元的电极的虚拟接地线GLi设置为接地电平，并且剩余的虚拟接地线连接到设置为偏置电平的公共偏置电位线。

5. 发明授权

US4763020A Programmable logic device having plural programmable function cells 失效
标题翻译：具有多个可编程功能单元的可编程逻辑器件
公开(公告)号：US4763020A
公开(公告)日：1988-08-09
申请号：US903781
申请日：1986-09-04
申请人： Akira Takata , Koichi Fujii
发明人： Akira Takata , Koichi Fujii
IPC分类号： A23G9/04 , A23G9/20 , A47J43/046 , F25C5/12 , G01R31/3185 , H03K19/177
CPC分类号： A23G9/045 , A23G9/20 , F25C5/12 , G01R31/318516 , H03K19/17712
摘要： A programmable logic device includes an AND plane and an OR plane associated with the AND plane. At least one of the AND and OR planes includes an array of programmable memory elements which can be selectively programmed to define a desired logic function. In one form, a function cell designed for providing one of a predetermined functions, such as a counter or shift register function, selectively is provided. In another form, a driver circuit connected to a pair of input lines has a first state in which one of the paired input lines serves as an inverting input line and the other as a non-inverting input line and a second state in which both of the paired input lines are set at low level. In a further form, two pairs of input lines of the AND plane are connected to an input or input/output terminal of the device. In a still further form, the AND plane further includes a plurality of test input lines each associated with the corresponding one of the product term lines of the AND plane, and an three-state output buffer is connected between the OR plane and a device output terminal, whereby the output buffer is enabled by a logical sum between a selected product term from the AND plane and an internally supplied test mode signal.
摘要翻译：可编程逻辑器件包括AND平面和与AND平面相关联的OR平面。 AND和OR平面中的至少一个包括可编程存储器元件的阵列，其可以被选择性地编程以定义期望的逻辑功能。在一种形式中，提供了用于选择性地提供诸如计数器或移位寄存器功能之类的预定功能之一的功能单元。在另一种形式中，连接到一对输入线的驱动器电路具有第一状态，其中一对输入线中的一个用作反相输入线，而另一个用作非反相输入线，而第二状态成对的输入线设置为低电平。在另一种形式中，AND平面的两对输入线连接到设备的输入或输入/输出端子。在另一种形式中，AND平面还包括多个测试输入线，每条测试输入线与AND平面的相应一个乘积项相关联，三态输出缓冲器连接在OR平面和器件输出终端，由此通过来自AND平面的所选择的产品项和内部提供的测试模式信号之间的逻辑和启用输出缓冲器。

6. 发明授权

US4228266A Process for producing copolymerized resins 失效
标题翻译：制备共聚树脂的方法
公开(公告)号：US4228266A
公开(公告)日：1980-10-14
申请号：US935609
申请日：1978-08-21
申请人： Ken-ichi Kudo , Yoshihiko Kitagawa , Teruhisa Koyama , Akira Takata , Shuichi Kanagawa , Tetsuo Yamaguchi
发明人： Ken-ichi Kudo , Yoshihiko Kitagawa , Teruhisa Koyama , Akira Takata , Shuichi Kanagawa , Tetsuo Yamaguchi
IPC分类号： C08F8/04 , C08F212/14 , C08F232/00 , C08L9/06 , C08L25/10 , C08L25/18 , C08L45/00 , C08F236/00 , C08F36/00 , C08F232/08
CPC分类号： C08L25/10 , C08F212/14 , C08F232/00 , C08F8/04 , C08L25/18 , C08L45/00 , C08L9/00 , C08L9/06
摘要： A novel copolymer resin having excellent compatibility with rubber and plastics, stable to air, easily soluble in the hydrocarbon solvents and free of gel, said resin being obtained either (1) by copolymerizing one or more of the monomeric substances selected from the group consisting of cyclopentadiene, dicyclopentadiene and alkyl-substituted compounds thereof and one or more of the substances selected from the hydroxystyrene derivatives, or (2) by copolymerizing one or more of the monomeric substances selected from the group consisting of cyclopentadiene, dicyclopentadiene and alkyl-substituted compounds thereof, one or more of the substances selected from the codimers of cyclopentadiene and/or alkyl-substituted compounds thereof and chain conjugated diolefins having 4 to 5 carbon atoms, and one or more of the substances selected from the hydroxystyrene derivatives. There are also provided compositions comprising said resin and rubber or thermoplastic high-molecular weight substances.
摘要翻译：一种新型共聚物树脂，其与橡胶和塑料具有优异的相容性，对空气稳定，易溶于烃溶剂且不含凝胶，所述树脂可通过（1）通过共聚一种或多种选自以下的单体物质环戊二烯，二环戊二烯及其烷基取代的化合物和选自羟基苯乙烯衍生物的一种或多种物质，或（2）通过共聚一种或多种选自环戊二烯，二环戊二烯及其烷基取代的化合物的单体物质选自环戊二烯和/或其烷基取代的化合物的共聚物和具有4至5个碳原子的链状共轭二烯烃的一种或多种物质，以及一种或多种选自羟基苯乙烯衍生物的物质。还提供了包含所述树脂和橡胶或热塑性高分子量物质的组合物。

7. 发明授权

US4219310A Construction of adjustable blade shaft bearing in axial-flow fan with adjustable blades 失效
标题翻译：在可调节叶片的轴流风机中构造可调节叶片轴承
公开(公告)号：US4219310A
公开(公告)日：1980-08-26
申请号：US4223
申请日：1979-01-17
申请人： Akira Takata , Kazuhiko Ozaki
发明人： Akira Takata , Kazuhiko Ozaki
IPC分类号： F04D29/36 , F16C19/10
CPC分类号： F16C19/10 , F04D29/36
摘要： According to the present invention, in an adjustable blade shaft bearing in an axial-flow fan with adjustable blades, the adjustable blade shaft bearing or a thrust bearing is packed with an annular cover having a U-shaped cross-sectional configuration and a lubricating oil is sealed in the annular cover.With the above construction, under the centrifugal force produced by the rotation of the axial-flow fan, the lubricating oil can be forced to act always on the rolling surface. Moreover the devices and machining of parts required in the conventional forced lubrication systems may be eliminated so that the construction may be simplified.
摘要翻译：根据本发明，在具有可调节叶片的轴流风扇中的可调节叶片轴轴承中，可调节叶片轴轴承或推力轴承装有具有U形横截面构造的环形盖和润滑油密封在环形盖中。通过上述结构，在由轴流风扇的旋转产生的离心力的作用下，润滑油可以被迫始终作用在滚动面上。此外，可以消除常规强制润滑系统中所需的部件的装置和加工，从而可以简化结构。

8. 发明授权

US6137120A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US6137120A
公开(公告)日：2000-10-24
申请号：US918010
申请日：1997-08-27
申请人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
发明人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
IPC分类号： B81B3/00 , C23C16/48 , C23C16/511 , C23C16/56 , G01L9/00 , G01P15/08 , H01H59/00 , H01J37/32 , H01L27/12 , H01L31/0376 , H01L31/078 , H01L31/18 , H02N1/00 , H01L29/04 , H01L31/036
CPC分类号： H01J37/32678 , B81C1/0038 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , G01L9/0042 , G01P15/0802 , H01L27/12 , H01L27/1203 , H01L31/03762 , H01L31/0693 , H01L31/0725 , H01L31/073 , H01L31/078 , H01L31/1804 , H01L31/1828 , H01L31/186 , H02N1/002 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81C2201/0109 , G02F2001/136281 , H01H59/0009 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.
摘要翻译：为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104）从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。此时，最上层（1104）用作蚀刻停止器。因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。

9. 发明授权

US6106734A Micromachine manufacture using gas beam crystallization 失效
标题翻译：微机械制造采用气束结晶
公开(公告)号：US6106734A
公开(公告)日：2000-08-22
申请号：US917267
申请日：1997-08-25
申请人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
发明人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
IPC分类号： B81B3/00 , C23C16/48 , C23C16/511 , C23C16/56 , G01L9/00 , G01P15/08 , H01H59/00 , H01J37/32 , H01L27/12 , H01L31/0376 , H01L31/078 , H01L31/18 , H02N1/00 , H01L21/302
CPC分类号： H01J37/32678 , B81C1/0038 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , G01L9/0042 , G01P15/0802 , H01L27/12 , H01L27/1203 , H01L31/03762 , H01L31/0693 , H01L31/0725 , H01L31/073 , H01L31/078 , H01L31/1804 , H01L31/1828 , H01L31/186 , H02N1/002 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81C2201/0109 , G02F2001/136281 , H01H59/0009 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.
摘要翻译：为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104）从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。此时，最上层（1104）用作蚀刻停止器。因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。具有由单晶材料制成的诸如隔膜的复杂构件的微加工机可以容易地通过无接合制造。

10. 发明授权

US5847449A Semiconductor device 失效
公开(公告)号：US5847449A
公开(公告)日：1998-12-08
申请号：US897417
申请日：1997-07-21
申请人： Akira Takata , Tetsuo Hikawa , Takashi Sawada , Tom Dang-hsing Yiu , Ful-Long Ni
发明人： Akira Takata , Tetsuo Hikawa , Takashi Sawada , Tom Dang-hsing Yiu , Ful-Long Ni
IPC分类号： H01L27/04 , H01L21/82 , H01L21/822 , H01L23/485 , H01L23/50 , H01L27/10 , H01L23/52
CPC分类号： H01L24/06 , H01L23/50 , H01L24/49 , H01L2224/05554 , H01L2224/05599 , H01L2224/45124 , H01L2224/48247 , H01L2224/48699 , H01L2224/49171 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01082 , H01L2924/13091 , H01L2924/3011
摘要： In order to reduce the chip size of a semiconductor device as well as to separate noises between at least two types of pads having different functions, at least one Vcc and at least one Vss are provided on opposite edges of a package (101) so that output pins or I/O pins are arranged therebetween and input pins are arranged outside the same. Non-connected excess pins (NC) are arranged on upper and lower boundaries, for omitting wires and reducing the chip size.

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