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1. 发明授权

US09530997B2 Partition including buffering pad disposed on frame for pouch type secondary battery 有权
标题翻译：分隔包括缓冲垫布置在袋式二次电池的框架上
公开(公告)号：US09530997B2
公开(公告)日：2016-12-27
申请号：US14118630
申请日：2012-05-30
申请人： Young Ki Kim , Won Jun Lee , Seung Bum Kim
发明人： Young Ki Kim , Won Jun Lee , Seung Bum Kim
IPC分类号： H01M2/10 , H01M2/18 , H01M6/46 , H01M2/02 , H01M2/20 , H01M2/34
CPC分类号： H01M2/18 , H01M2/0275 , H01M2/1061 , H01M2/204 , H01M2/347
摘要： A pouch type secondary battery includes a pouch having a receiving part receiving an electrolyte therein and a sealing part formed by sealing an outer circumference of the receiving part in order to seal the receiving part and an electrode tab connected to one side of the pouch so as to be protruded, and at least one partition provided between at least two pouch type secondary batteries. The partition comprises: an electrode tab supporting part supporting the electrode tab; a frame extended from the electrode tab supporting part, supporting the sealing part, and having the receiving part inserted thereinto; and a buffering pad attached to an inner side of the frame at which the receiving part is seated so as to be disposed between the frame and the receiving part. The buffering pad has a cross-sectional shape in which one side of a rectangular frame is opened.
摘要翻译：袋型二次电池包括具有接收电解质的容纳部分的袋和通过密封接收部的外周而形成的密封部，以便密封接收部和连接到袋的一侧的电极片，以便和至少两个袋式二次电池之间设置的至少一个隔板。隔板包括：支撑电极片的电极片支撑部分; 从所述电极片支撑部延伸的框架，支撑所述密封部，并且将所述接收部插入其中; 以及缓冲垫，其附接到所述框架的内侧，在所述框架的内侧，所述接收部分被安置在所述框架的内侧，以便布置在所述框架和所述接收部件之间。缓冲垫具有矩形框架的一侧打开的横截面形状。

2. 发明授权

US09214650B2 Battery module case 有权
标题翻译：电池模块外壳
公开(公告)号：US09214650B2
公开(公告)日：2015-12-15
申请号：US13884729
申请日：2011-11-14
申请人： Won Jun Lee , Dong Joo Lim
发明人： Won Jun Lee , Dong Joo Lim
IPC分类号： H01M2/02 , H01M10/42 , H01M10/647 , H01M2/10 , H01M10/6556 , H01M10/6561
CPC分类号： H01M2/0207 , H01M2/0237 , H01M2/1077 , H01M10/4207 , H01M10/6556 , H01M10/6561
摘要： The present invention relates to a battery module case, and more particularly, to a battery module case in which sub-battery modules are slidably mounted in a vertical or horizontal direction, wherein each sub-battery module comprises one or more battery cells, electrode tabs extending in one direction from the respective battery cells, and a pouched type case consisting of aluminum laminate sheets for covering the surfaces of the battery cells, except for the surfaces on which the electrode tabs are formed. The battery module case of the present invention is formed into an assembly type structure to be coupled to the outer surfaces of the sub-battery modules, wherein the outer surfaces include surfaces on which the electrode tabs are formed. At least two or more sub-battery modules are stacked and arranged in parallel, such that the surfaces on which the electrode tabs are formed are aligned in the same direction.
摘要翻译：本发明涉及一种电池模块壳体，更具体地说，涉及一种电池模块壳体，其中副电池模块沿垂直或水平方向可滑动地安装，其中每个子电池模块包括一个或多个电池单元，电极片从相应的电池单元延伸到一个方向，以及由用于覆盖电池单元的表面的铝层压板组成的袋状壳体，除了形成有电极接头的表面之外。本发明的电池模块壳体形成为联接到子电池模块的外表面的组装型结构，其中外表面包括其上形成有电极接头的表面。至少两个或更多个子电池模块被堆叠并平行布置，使得其上形成电极片的表面在相同的方向上对准。

3. 发明申请

US20150179927A1 METHODS OF DETECTING AN ETCH BY-PRODUCT AND METHODS OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE USING THE SAME 有权
标题翻译：检测副产品的方法和使用该方法制造磁阻随机存取存储器件的方法
公开(公告)号：US20150179927A1
公开(公告)日：2015-06-25
申请号：US14449408
申请日：2014-08-01
申请人： Jin-Hye BAE , Won-Jun LEE , Sung-Yoon CHUNG , Taek-Dong CHUNG
发明人： Jin-Hye BAE , Won-Jun LEE , Sung-Yoon CHUNG , Taek-Dong CHUNG
IPC分类号： H01L43/12 , H01L43/10
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L43/10
摘要： In a method of detecting an etch by-product, the method including forming a magnetic layer including palladium (Pd) on a substrate; etching the magnetic layer to form a magnetic layer pattern; depositing a mixture including an alkyl bromide compound on a surface of the magnetic layer pattern; and measuring a current difference between the substrate and the mixture to detect an etch by-product on the surface of the magnetic layer pattern.
摘要翻译：在检测蚀刻副产物的方法中，所述方法包括在基底上形成包括钯（Pd）的磁性层; 蚀刻磁性层以形成磁性层图案; 在所述磁性层图案的表面上沉积包含烷基溴化合物的混合物; 并测量衬底和混合物之间的电流差以检测磁性层图案表面上的蚀刻副产物。

4. 发明申请

US20130280596A1 CASE OF POUCH TYPE CELL 审中-公开
标题翻译： POUCH型细胞病例
公开(公告)号：US20130280596A1
公开(公告)日：2013-10-24
申请号：US13977182
申请日：2011-12-30
申请人： Won Jun Lee , Deok Hoon Ham , Seung Bum Kim , Dong Joo Lim , Sang Hyuk Kim
发明人： Won Jun Lee , Deok Hoon Ham , Seung Bum Kim , Dong Joo Lim , Sang Hyuk Kim
IPC分类号： H01M2/10
CPC分类号： H01M2/1061 , H01M2/1077 , H01M10/613 , H01M10/647 , H01M10/6551 , H01M10/6555 , H01M10/6557
摘要： Provided is a case of pouch type cells, which is capable of stably protecting pouch type cells constituting a secondary battery used as a high power supply, and having excellent heat dissipation performance.
摘要翻译：提供了能够稳定地保护构成用作高电源的二次电池的袋型电池并具有优异的散热性能的袋型电池的情况。

5. 发明申请

US20130112914A1 Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same 审中-公开
标题翻译：用于抛光的浆料组合物及其制造相变存储器件的方法
公开(公告)号：US20130112914A1
公开(公告)日：2013-05-09
申请号：US13617160
申请日：2012-09-14
申请人： Choong-Ho HAN , Sang-Kyun KIM , Ye-Hwan KIM , Joon-Sang PARK , Jin-Woo BAE , Won-Jun LEE , Kyoung-Moon KANG , Jae-Dong LEE
发明人： Choong-Ho HAN , Sang-Kyun KIM , Ye-Hwan KIM , Joon-Sang PARK , Jin-Woo BAE , Won-Jun LEE , Kyoung-Moon KANG , Jae-Dong LEE
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1472 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.
摘要翻译：浆料组合物包括研磨剂，氧化剂和包含聚环氧乙烷共聚物的第一吸附抑制剂。制造相变存储器件的方法可以包括在填充沟槽的层间绝缘膜上提供包括具有沟槽和相变材料层的层间绝缘膜的衬底，并且使用相变材料层对相变材料层进行化学机械抛光浆料组成以形成相变材料图案层。

6. 发明申请

US20100210068A1 Method of forming phase change memory device 审中-公开
标题翻译：形成相变存储器件的方法
公开(公告)号：US20100210068A1
公开(公告)日：2010-08-19
申请号：US12591772
申请日：2009-12-01
申请人： Won-jun Lee , Jin-woo Park , Byoung-moon Yoon , Cheol-woo Park
发明人： Won-jun Lee , Jin-woo Park , Byoung-moon Yoon , Cheol-woo Park
IPC分类号： H01L21/06
CPC分类号： H01L45/143 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： Provided is a method of forming a phase change memory device, the method including washing and rinsing a phase change device structure. A phase change material layer may be formed on a semiconductor substrate. The phase change material layer may be etched so as to form a phase change device structure. The semiconductor substrate on which the phase change device structure is formed may be washed using a washing solution including a reducing agent containing fluorine (F), a pH controller, a dissolution agent and water. In addition, the semiconductor substrate on which the washing is performed may be rinsed.
摘要翻译：提供一种形成相变存储器件的方法，该方法包括洗涤和漂洗相变装置结构。相变材料层可以形成在半导体衬底上。相变材料层可以被蚀刻以形成相变器件结构。可以使用包含含氟还原剂（F），pH控制剂，溶解剂和水的洗涤溶液洗涤其上形成相变器件结构的半导体衬底。此外，可以冲洗其上进行洗涤的半导体衬底。

7. 发明申请

US20100158045A1 METHOD FOR TRANSMITTING/RECEIVING DATA FRAME IN CAN PROTOCOL 审中-公开
标题翻译： CAN协议中发送/接收数据帧的方法
公开(公告)号：US20100158045A1
公开(公告)日：2010-06-24
申请号：US12543876
申请日：2009-08-19
申请人： Chang Min Shin , Tae Man Han , Ho Sang Ham , Won Jun Lee
发明人： Chang Min Shin , Tae Man Han , Ho Sang Ham , Won Jun Lee
IPC分类号： H04J3/24
CPC分类号： H04L12/40071
摘要： Provided is a method for transmitting/receiving data in a CAN protocol. First, it is determined whether the size of CAN message data to be transmitted exceeds the size of the data field. If the size of the CAN message data exceeds the size of the data field, the CAN message data are fragmented to generate data fragments smaller in size than the data field, A CAN data frame including a control field and a data field is generated with respect to each of the data fragments, and the generated CAN data frame is transmitted.
摘要翻译：提供了一种在CAN协议中发送/接收数据的方法。首先，确定要发送的CAN消息数据的大小是否超过数据字段的大小。如果CAN消息数据的大小超过数据字段的大小，则CAN消息数据被分段以产生比数据字段更小的数据片段，包括控制字段和数据字段的CAN数据帧相对于传送到每个数据片段，并且生成的CAN数据帧被发送。

8. 发明授权

US07582559B2 Method of manufacturing a semiconductor device having voids in a polysilicon layer 有权
标题翻译：制造在多晶硅层中具有空隙的半导体器件的方法
公开(公告)号：US07582559B2
公开(公告)日：2009-09-01
申请号：US11249515
申请日：2005-10-14
申请人： In-Joon Yeo , Won-Jun Lee , Tae-Hyun Kim , Ji-Hong Kim , Byoung-Moon Yoon
发明人： In-Joon Yeo , Won-Jun Lee , Tae-Hyun Kim , Ji-Hong Kim , Byoung-Moon Yoon
IPC分类号： H01L21/4763
CPC分类号： H01L27/11521 , H01L27/115
摘要： A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The first polysilicon layer also includes a void therein. An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed. A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.
摘要翻译：制造半导体器件的方法包括在衬底上形成绝缘图案。绝缘图案具有暴露基板表面的至少一个开口。然后，在基板上形成第一多晶硅层，使得第一多晶硅层填充开口。第一多晶硅层还包括空隙。去除第一多晶硅层的上部，使得空隙膨胀到凹部并且凹部暴露。第二多晶硅层形成在衬底上，使得第二多晶硅层填充凹部。

9. 发明申请

US20090203365A1 METHOD FOR PROVIDING A RECEIVER'S TERMINAL WITH MULTIMEDIA CONTENTS BEFORE A CALL IS CONNECTED 有权
标题翻译：在连接呼叫之前提供多媒体内容的接收者终端的方法
公开(公告)号：US20090203365A1
公开(公告)日：2009-08-13
申请号：US12374780
申请日：2007-08-09
申请人： Won-Jun Lee , Seung-Ook Je , Su-Nyeon Kim , Jae-Young Park , Jin-Hong Kim
发明人： Won-Jun Lee , Seung-Ook Je , Su-Nyeon Kim , Jae-Young Park , Jin-Hong Kim
IPC分类号： H04M3/42
CPC分类号： H04L65/1069 , H04L65/1009 , H04W76/15
摘要： Disclosed is a method for providing a target mobile station with a multimedia content such as audio or video content before a call an originating mobile station attempted to connect is answered by the target mobile station. A mobile communication network protocol for multimedia transmission between a target mobile station and a network is established before a called party receives a call, so that multimedia such as images or moving pictures may be sent to the target mobile station before the called party answers the call. In this way, the called party is able to enjoy a multimedia service before the phone call is connected. Moreover, if the multimedia is an audio or moving picture about a calling party, the called party can identify the calling party based on the multimedia.
摘要翻译：公开了一种用于在目标移动台应答发起移动台尝试连接的呼叫之前向目标移动台提供诸如音频或视频内容的多媒体内容的方法。在被叫方接收呼叫之前，建立用于目标移动台和网络之间的多媒体传输的移动通信网络协议，从而在被叫方应答呼叫之前，诸如图像或运动图像的多媒体可以被发送到目标移动台。以这种方式，被叫方在连接电话之前能够享受多媒体业务。此外，如果多媒体是关于呼叫方的音频或运动图像，则被叫方可以基于多媒体识别主叫方。

10. 发明授权

US07151043B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07151043B2
公开(公告)日：2006-12-19
申请号：US11082616
申请日：2005-03-17
申请人： Tae-hyun Kim , Byoung-moon Yoon , Won-jun Lee , Yong-sun Ko , Kyung-hyun Kim
发明人： Tae-hyun Kim , Byoung-moon Yoon , Won-jun Lee , Yong-sun Ko , Kyung-hyun Kim
IPC分类号： H01L21/76
CPC分类号： H01L27/11521 , H01L21/76224 , H01L27/115
摘要： Methods of manufacturing a semiconductor device are provided. A trench is formed in a semiconductor substrate. A first field oxide layer is formed that partially fills the trench. The first field oxide layer defines an active region of the substrate that is adjacent to the trench. An upper portion of sidewalls of the trench extends upward beyond a surface of the first field oxide layer. A first liner is formed on the first field oxide layer and on the portion of the sidewalls of the trench that extend upward beyond the first field oxide layer. A second field oxide layer is formed on the first liner and fills the trench. The second field oxide layer and the first liner are each partially removed to expose a top adjacent surface and upper sidewalls of the trench along the active region of the substrate. A dielectric layer is formed on the exposed top adjacent surface and upper sidewalls of the trench. A gate electrode is formed on the dielectric layer.
摘要翻译：提供制造半导体器件的方法。在半导体衬底中形成沟槽。形成部分填充沟槽的第一场氧化物层。第一场氧化物层限定与沟槽相邻的衬底的有源区。沟槽的侧壁的上部向上延伸超过第一场氧化物层的表面。第一衬垫形成在第一场氧化物层上并且在沟槽的侧壁的部分上方向上延伸超过第一场氧化物层。在第一衬垫上形成第二场氧化物层并填充沟槽。每个部分去除第二场氧化物层和第一衬里以沿着衬底的有源区域暴露沟槽的顶部相邻表面和上侧壁。介电层形成在沟槽的暴露的顶部相邻表面和上侧壁上。在电介质层上形成栅电极。

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